Abstract: A thin film inductor according to one embodiment includes a bottom yoke; a first insulating layer above the bottom yoke; one or more conductors above the bottom yoke and separated therefrom by the first insulating layer; a second insulating layer above the one or more conductors; a third insulating layer above the second insulating layer; and a top yoke above the third insulating layer. A thin film inductor according to another embodiment includes a bottom yoke; a first insulating layer above the bottom yoke, the first insulating layer being polymeric; one or more conductors above the bottom yoke and separated therefrom by the first insulating layer; an upper insulating layer above the one or more conductors, the upper insulating layer being polymeric; and a top yoke above the second insulating layer.

Abstract: In accordance with embodiments disclosed herein, there are provided mechanisms and methods for batch processing in an on-demand service environment. For example, in one embodiment, mechanisms include receiving a processing request for a multi-tenant database, in which the processing request specifies processing logic and a processing target group within the multi-tenant database. Such an embodiment further includes dividing or chunking the processing target group into a plurality of processing target sub-groups, queuing the processing request with a batch processing queue for the multi-tenant database among a plurality of previously queued processing requests, and releasing each of the plurality of processing target sub-groups for processing in the multi-tenant database via the processing logic at one or more times specified by the batch processing queue.

Abstract: Magnetic random access memory (MRAM) devices and techniques for use thereof are provided. In one aspect, a magnetic memory cell is provided. The magnetic memory cell comprises at least one fixed magnetic layer; at least one first free magnetic layer separated from the fixed magnetic layer by at least one barrier layer; at least one second free magnetic layer separated from the first free magnetic layer by at least one spacer layer; and at least one capping layer over a side of the second free magnetic layer opposite the spacer layer. One or more of the first free magnetic layer and the second free magnetic layer comprise at least one rare earth element, such that the at least one rare earth element makes up between about one percent and about 10 percent of one or more of the first free magnetic layer and the second free magnetic layer.

Abstract: In one embodiment, the invention is a magnetic shift register memory device. One embodiment of a memory cell includes a magnetic column including a plurality of magnetic domains, a reader coupled to the magnetic column, for reading data from the magnetic domains, a temporary memory for storing data read from the magnetic domains, and a writer coupled to the magnetic column, for writing data in the temporary memory to the magnetic domains.

Abstract: In one embodiment, the invention is a magnetic shift register memory device. One embodiment of a memory cell includes a magnetic column including a plurality of magnetic domains, a reader coupled to the magnetic column, for reading data from the magnetic domains, a temporary memory for storing data read from the magnetic domains, and a writer coupled to the magnetic column, for writing data in the temporary memory to the magnetic domains.

Abstract: In one embodiment, the invention is a hybrid superconducting-magnetic memory cell and array. One embodiment of a memory cell includes a magnetoresistive element and at least one superconducting element wired in parallel with the magnetoresistive element. In a further embodiment, memory cells of the disclosed configuration are arranged to form a memory array.

Abstract: In one embodiment, the invention is a hybrid superconducting-magnetic memory cell and array. One embodiment of a memory cell includes a magnetoresistive element and at least one superconducting element wired in parallel with the magnetoresistive element. In a further embodiment, memory cells of the disclosed configuration are arranged to form a memory array.

Abstract: A thin film inductor according to one embodiment includes one or more arms; one or more conductors passing through each arm; a first ferromagnetic yoke wrapping partially around the one or more conductors in a first of the one or more arms, the first ferromagnetic yoke comprising a magnetic top section, a magnetic bottom section, and via regions positioned on opposites sides of the one or more conductors in the first of the one or more arms, wherein the magnetic top section and magnetic bottom section are coupled together through a low reluctance path in the via regions; and one or more non-magnetic gaps between the top section and the bottom section in at least one of the via regions. Additional systems and methods are also provided.

Abstract: A method for evaluating bytecode in an on-demand service environment. A request to compile source code is received in a multitenant database environment. One or more limit enforcement mechanisms is/are inserted into the source code to monitor utilization of one or more corresponding resources within the multitenant database environment. The source code is compiled to generate executable code. The executable code is executed within the multitenant database environment. Resource utilization is evaluated for the one or more resources in response to executing code corresponding to at least one of the limit enforcement mechanisms.

Abstract: Execution of code in a multitenant runtime environment. A request to execute code corresponding to a tenant identifier (ID) is received in a multitenant environment. The multitenant database stores data for multiple client entities each identified by a tenant ID having one of one or more users associated with the tenant ID. Users of each of multiple client entities can only access data identified by a tenant ID associated with the respective client entity. The multitenant database is a hosted database provided by an entity separate from the client entities, and provides on-demand database service to the client entities. Source code corresponding to the code to be executed is retrieved from a multitenant database. The retrieved source code is compiled. The compiled code is executed in the multitenant runtime environment. The memory used by the compiled code is freed in response to completion of the execution of the compiled code.

Abstract: Techniques and mechanisms for conversion of code of a first type to bytecode. Apex provides various unique characteristics. When converting to bytecode, these characteristics are handled to provide bytecode functionality. Some of the unique characteristics of Apex include Autoboxing, SOQL, Properties, Comparisons, Modifiers, Code coverage mechanisms and Sharing mechanisms.

Abstract: In accordance with embodiments disclosed herein, there are provided mechanisms and methods for batch processing in an on-demand service environment. For example, in one embodiment, mechanisms include receiving a processing request for a multi-tenant database, in which the processing request specifies processing logic and a processing target group within the multi-tenant database. Such an embodiment further includes dividing or chunking the processing target group into a plurality of processing target sub-groups, queuing the processing request with a batch processing queue for the multi-tenant database among a plurality of previously queued processing requests, and releasing each of the plurality of processing target sub-groups for processing in the multi-tenant database via the processing logic at one or more times specified by the batch processing queue.

Abstract: Magnetic random access memory (MRAM) devices and techniques for use thereof are provided. In one aspect, a magnetic memory cell is provided. The magnetic memory cell comprises at least one fixed magnetic layer; at least one first free magnetic layer separated from the fixed magnetic layer by at least one barrier layer; at least one second free magnetic layer separated from the first free magnetic layer by at least one spacer layer; and at least one capping layer over a side of the second free magnetic layer opposite the spacer layer. One or more of the first free magnetic layer and the second free magnetic layer comprise at least one rare earth element, such that the at least one rare earth element makes up between about one percent and about 10 percent of one or more of the first free magnetic layer and the second free magnetic layer.

Abstract: Magnetic random access memory (MRAM) devices and techniques for use thereof are provided. In one aspect, a magnetic memory cell is provided. The magnetic memory cell comprises at least one fixed magnetic layer; at least one first free magnetic layer separated from the fixed magnetic layer by at least one barrier layer; at least one second free magnetic layer separated from the first free magnetic layer by at least one spacer layer; and at least one capping layer over a side of the second free magnetic layer opposite the spacer layer. One or more of the first free magnetic layer and the second free magnetic layer comprise at least one rare earth element, such that the at least one rare earth element makes up between about one percent and about 10 percent of one or more of the first free magnetic layer and the second free magnetic layer.

Abstract: In one embodiment, the invention is a magnetic shift register memory device. One embodiment of a memory cell includes a magnetic column including a plurality of magnetic domains, a reader coupled to the magnetic column, for reading data from the magnetic domains, a temporary memory for storing data read from the magnetic domains, and a writer coupled to the magnetic column, for writing data in the temporary memory to the magnetic domains.

Abstract: In one embodiment, the invention is a hybrid superconducting-magnetic memory cell and array. One embodiment of a memory cell includes a magnetoresistive element and at least one superconducting element wired in parallel with the magnetoresistive element. In a further embodiment, memory cells of the disclosed configuration are arranged to form a memory array.

Abstract: Magnetic random access memory (MRAM) devices and techniques for use thereof are provided. In one aspect, a magnetic memory cell is provided. The magnetic memory cell comprises at least one fixed magnetic layer; at least one first free magnetic layer separated from the fixed magnetic layer by at least one barrier layer; at least one second free magnetic layer separated from the first free magnetic layer by at least one spacer layer; and at least one capping layer over a side of the second free magnetic layer opposite the spacer layer. One or more of the first free magnetic layer and the second free magnetic layer comprise at least one rare earth element, such that the at least one rare earth element makes up between about one percent and about 10 percent of one or more of the first free magnetic layer and the second free magnetic layer.

Abstract: An exemplary magnetic random access memory system comprising, a spin-current generating portion including, a ferromagnetic film layer, and a conductance layer, a first write portion in electrical contact with the ferromagnetic film including, a selection device, and a first read portion in electrical contact with the conductance layer including, a free layer magnet, a read non-magnetic layer, and a reference layer, a second write portion in electrical contact with the ferromagnetic film, and a second read portion in electrical contact with the conductance layer.

Abstract: An exemplary method for resetting a spin-transfer based random access memory system, the method comprising, inducing a first current through a conductor, wherein the first current is operative to change a direction of orientation of a magnetic reference layer, inducing a second current from the drain terminal to the write terminal via a conductive layer, wherein the second current is operative to change the direction of a magnetic state of a free layer magnet, and inducing a third current through the conductor, wherein the third current is operative to change the direction of magnetic orientation of the reference layer.

Abstract: In accordance with a first aspect of the present invention, duplicate responses to a query are automatically determined and eliminated. In accordance with a second aspect of the present invention, invalid responses to a query are automatically determined and eliminated. In accordance with a third aspect of the present invention, an indication is generated if no responses are returned from a knowledge base for a query, in which case provision of a response is automatically facilitated so that at least one response will be returned from the knowledge base for future resubmissions of the query. In one embodiment, all three aspects of the present invention are performed for a given query.