Abstract: A diagnostic interface architecture for a memory device supports in one aspect one or more dynamically reconfigurable functional interconnects normally utilized in connection with reading data from the memory device and/or writing data to the memory device. The dynamically reconfigurable functional interconnects are capable of being configured to operate in either functional or diagnostic modes, whereby in the diagnostic mode, such interconnects may be used to communicate diagnostic information to support one or more diagnostic operations. The diagnostic interface architecture may also support multiple diagnostic interfaces in a given memory device, with at least one such diagnostic interface being capable of being selectively enabled in response to a failure in another diagnostic interface.

Abstract: A finFET structure and a method of fabricating the finFET structure. The method includes: forming a silicon fin on a top surface of a silicon substrate; forming a gate dielectric on opposite sidewalls of the fin; forming a gate electrode over a channel region of the fin, the gate electrode in direct physical contact with the gate dielectric layer on the opposite sidewalls of the fin; forming a first source/drain in the fin on a first side of the channel region and forming a second source/drain in the fin on a second side of the channel region; removing a portion of the substrate from under at least a portion of the first and second source/drains to create a void; and filling the void with a dielectric material. The structure includes a body contact between the silicon body of the finFET and the substrate.

Abstract: Multiple interfaces dedicated to individual logic circuits such as memory arrays are capable of being dynamically reconfigured from operating separately and in parallel to operating in a more collective manner to ensure that data associated with all of the logic circuits will be communicated irrespective of a failure in any of the interfaces. Specifically, a plurality of interfaces, each of which being ordinarily configured to communicate data associated with an associated logic circuit in parallel with the other interfaces, may be dynamically reconfigured, e.g., in response to a detected failure in one or more of the interfaces, to communicate data associated with each of the interfaces over each of at least a subset of the interfaces in a time multiplexed and replicated manner.

Abstract: A method and data receiver apparatus implement a high speed, such as double data rate (DDR), memory read data eye stretcher. Altering the reference level is performed to increase the size of the data eye. Knowledge of the previous data state is used to adjust the reference level for the current data being latched so that the data eye is maximized.

Abstract: A method and data receiver apparatus implement a high speed, such as double data rate (DDR), memory read data eye stretcher and a design structure on which the subject circuit resides is provided. Altering the reference level is performed to increase the size of the data eye. Knowledge of the previous data state is used to adjust the reference level for the current data being latched so that the data eye is maximized.

Abstract: A memory controller optimizes execution of a read/modify/write command by breaking the RMW command into separate and unique read and write commands that do not need to be executed together, but just need to be executed in the proper sequence. The most preferred embodiments use a separate RMW queue in the controller in conjunction with the read queue and write queue. In other embodiments, the controller places the read and write portions of the RMW into the read and write queue, but where the write queue has a dependency indicator associated with the RMW write command in the write queue to insure the controller maintains the proper execution sequence. The embodiments allow the memory controller to translate RMW commands into read and write commands with the proper sequence of execution to preserve data coherency.

Abstract: A memory controller optimizes execution of a read/modify/write command by breaking the RMW command into separate and unique read and write commands that do not need to be executed together, but just need to be executed in the proper sequence. The most preferred embodiments use a separate RMW queue in the controller in conjunction with the read queue and write queue. In other embodiments, the controller places the read and write portions of the RMW into the read and write queue, but where the write queue has a dependency indicator associated with the RMW write command in the write queue to insure the controller maintains the proper execution sequence. The embodiments allow the memory controller to translate RMW commands into read and write commands with the proper sequence of execution to preserve data coherency.

Abstract: A memory controller optimizes execution of a read/modify/write command by breaking the RMW command into separate and unique read and write commands that do not need to be executed together, but just need to be executed in the proper sequence. The most preferred embodiments use a separate RMW queue in the controller in conjunction with the read queue and write queue. In other embodiments, the controller places the read and write portions of the RMW into the read and write queue, but where the write queue has a dependency indicator associated with the RMW write command in the write queue to insure the controller maintains the proper execution sequence. The embodiments allow the memory controller to translate RMW commands into read and write commands with the proper sequence of execution to preserve data coherency.

Abstract: Multiple interfaces dedicated to individual logic circuits such as memory arrays are capable of being dynamically reconfigured from operating separately and in parallel to operating in a more collective manner to ensure that data associated with all of the logic circuits will be communicated irrespective of a failure in any of the interfaces. Specifically, a plurality of interfaces, each of which being ordinarily configured to communicate data associated with an associated logic circuit in parallel with the other interfaces, may be dynamically reconfigured, e.g., in response to a detected failure in one or more of the interfaces, to communicate data associated with each of the interfaces over each of at least a subset of the interfaces in a time multiplexed and replicated manner.

Abstract: A method and apparatus implement redundant memory access using multiple controllers on the same bank of memory, and a design structure on which the subject circuit resides is provided. A first memory controller uses the memory as its primary address space, for storage and fetches. A second redundant controller is also connected to the same memory. System control logic is used to notify the redundant controller of the need to take over the memory interface. The redundant controller initializes if required and takes control of the memory. The memory only needs to be initialized if the system has to be brought down and restarted in the redundant mode. This invention allows the system to continue to stay up and continue running during a memory controller or link failure.

Abstract: A method and apparatus implement redundant memory access using multiple controllers on the same bank of memory. A first memory controller uses the memory as its primary address space, for storage and fetches. A second redundant controller is also connected to the same memory. System control logic is used to notify the redundant controller of the need to take over the memory interface. The redundant controller initializes if required and takes control of the memory. The memory only needs to be initialized if the system has to be brought down and restarted in the redundant mode. This invention allows the system to continue to stay up and continue running during a memory controller or link failure.

Abstract: A method is disclosed for measuring alignment of polysilicon shapes relative to a silicon area wherein the presence of an electrical coupling is used to determine the presence of bias or misalignment. Bridging vertices on the polysilicon shapes are formed. Bridging vertices over the silicon area create low resistance connections between those bridging vertices and the silicon area; other bridging vertices over ROX (recessed oxide) areas do not create low resistance connections between those other bridging vertices and the silicon area. Determining which bridging vertices have low resistance connections to the silicon area and how many bridging vertices have low resistance connections to the silicon area are used to determine the bias and misalignment of the polysilicon shapes relative to the silicon area.

Abstract: An apparatus includes a virtual memory manager that moves data from a first block to second block in memory. When the virtual memory manager is ready to transfer data from the first block to the second block, a third, temporary block of memory is defined. The translation table in a DMA controller is changed to point DMA transfers that target the first block to instead target the temporary block. The virtual memory manager then transfers data from the first block to the second block. When the transfer is complete, a check is made to see if the DMA transferred data to the temporary block while the data from the first block was being written to the second block. If so, the data written to the temporary block is written to the second block. A hardware register is preferably used to efficiently detect changes to the temporary block.

Abstract: A finFET structure and a method of fabricating the finFET structure. The method includes: forming a silicon fin on a top surface of a silicon substrate; forming a gate dielectric on opposite sidewalls of the fin; forming a gate electrode over a channel region of the fin, the gate electrode in direct physical contact with the gate dielectric layer on the opposite sidewalls of the fin; forming a first source/drain in the fin on a first side of the channel region and forming a second source/drain in the fin on a second side of the channel region; removing a portion of the substrate from under at least a portion of the first and second source/drains to create a void; and filling the void with a dielectric material. The structure includes a body contact between the silicon body of the finFET and the substrate.

Abstract: A memory controller provides page copy logic that assures data coherency when a DMA operation to a page occurs during the copying of the page by the memory controller. The page copy logic compares the page index of the DMA operation to a copy address pointer that indicates the location currently being copied. If the page index of the DMA operation is less than the copy address pointer, the portion of the page that would be written to by the DMA operation has already been copied, so the DMA operation is performed to the physical address of the new page. If the page index of the DMA operation is greater than the copy address pointer, the portion of the page that would be written to by the DMA operation has not yet been copied, so the DMA operation is performed to the physical address of the old page.

Abstract: A finFET structure and a method of fabricating the finFET structure. The method includes: forming a silicon fin on a top surface of a silicon substrate; forming a gate dielectric on opposite sidewalls of the fin; forming a gate electrode over a channel region of the fin, the gate electrode in direct physical contact with the gate dielectric layer on the opposite sidewalls of the fin; forming a first source/drain in the fin on a first side of the channel region and forming a second source/drain in the fin on a second side of the channel region; removing a portion of the substrate from under at least a portion of the first and second source/drains to create a void; and filling the void with a dielectric material. The structure includes a body contact between the silicon body of the finFET and the substrate.

Abstract: An apparatus and method are disclosed for measuring bias of polysilicon shapes relative to a silicon area wherein the presence of an electrical coupling is used to determine the presence of bias. Bridging vertices on the polysilicon shapes are formed. Bridging vertices over the silicon area create low resistance connections between those bridging vertices and the silicon area; other bridging vertices over ROX (recessed oxide) areas do not create low resistance connections between those other bridging vertices and the silicon area. Determining which bridging vertices have low resistance connections to the silicon area and how many bridging vertices have low resistance connections to the silicon area are used to determine the bias of the polysilicon shapes relative to the silicon area.

Abstract: A memory controller optimizes execution of a read/modify/write command by breaking the RMW command into separate and unique read and write commands that do not need to be executed together, but just need to be executed in the proper sequence. The most preferred embodiments use a separate RMW queue in the controller in conjunction with the read queue and write queue. In other embodiments, the controller places the read and write portions of the RMW into the read and write queue, but where the write queue has a dependency indicator associated with the RMW write command in the write queue to insure the controller maintains the proper execution sequence. The embodiments allow the memory controller to translate RMW commands into read and write commands with the proper sequence of execution to preserve data coherency.

Abstract: An apparatus and method is disclosed for improving timing margins of logic paths on a semiconductor chip. Typical logic embodiments, such as CMOS (Complementary Metal Oxide Semiconductor), have path delays that become shorter as supply voltage is increased. Embodiments of the present invention store product data on each particular chip. The product data includes, for examples, but not limited to, a voltage range having a low limit voltage and a high limit voltage, a limit temperature, and performance of the particular chip in storage for the particular chip. Each chip has a voltage controller, a timer, and a thermal monitor. The voltage controller communicates with a voltage regulator and dynamically causes a voltage supply coupled to the chip to be as high as possible in the voltage range, subject to the limit temperature.

Abstract: An apparatus and method are disclosed for an improved semiconductor interconnect scheme using a simplified process. In an embodiment of the apparatus, a polysilicon shape is formed on a silicon area. The polysilicon shape is created having a bridging vertex. When a spacer is created on the polysilicon shape, the spacer width is formed to be small enough near the bridging vertex to allow a silicide bridge to form that creates an electrical coupling between the silicon area and the bridging vertex. Semiconductor devices and circuits are created using the improved semiconductor interconnect scheme using the simplified process.