Abstract: A finFET structure and a method of fabricating the finFET structure. The method includes: forming a silicon fin on a top surface of a silicon substrate; forming a gate dielectric on opposite sidewalls of the fin; forming a gate electrode over a channel region of the fin, the gate electrode in direct physical contact with the gate dielectric layer on the opposite sidewalls of the fin; forming a first source/drain in the fin on a first side of the channel region and forming a second source/drain in the fin on a second side of the channel region; removing a portion of the substrate from under at least a portion of the first and second source/drains to create a void; and filling the void with a dielectric material. The structure includes a body contact between the silicon body of the finFET and the substrate.

Abstract: A method and structure are provided for implementing enhanced cooling of a plurality of memory devices. The memory structure includes a stack of platters. A sub-plurality of memory devices is mounted on each platter. At least one connector is provided with each platter for connecting to the sub-plurality of memory devices. A heat sink is associated with the stack of platters for cooling the plurality of memory devices.

Abstract: A FinFET body contact structure and a method for creating the FinFET body contact structure are disclosed. The body contact structure comprises a wide fin portion of a semiconductor fin, the wide fin portion having a polysilicon polygon shape formed on a top surface of the wide fin portion. The polysilicon polygon shape has a center area having no polysilicon. FinFETs are formed on two vertical surfaces of the wide fin portion and gates of the FinFETs are coupled to the polysilicon polygon shape. Top surfaces of the wide fin portion and the polysilicon polygon shape are silicided. Silicide bridging is prevented by sidewall spacers. All convex angles on the polysilicon polygon shape are obtuse enough to prevent creation of bridging vertices. The center area is doped of an opposite type from a source and a drain of an associated FinFET.

Abstract: An apparatus and method is disclosed for determining polysilicon conductor width for 3-dimensional field effect transistors (FinFETs). Two or more resistors are constructed using a topology in which polysilicon conductors are formed over a plurality of silicon “fins”. A first resistor has a first line width. A second resistor has a second line width. The second line width is slightly different than the first line width. Advantageously, the first line width is equal to the nominal design width used to make FET gates in the particular semiconductor technology. Resistance measurements of the resistors and subsequent calculations using the resistance measurements are used to determine the actual polysilicon conductor width produced by the semiconductor process. A composite test structure not only allows calculation of the polysilicon conductor width, but provides proof that differences in the widths used in the calculations do not introduce objectionable etching characteristics of the polysilicon conductors.

Abstract: A method and apparatus are provided for implementing a redundancy enhanced differential signal interface. A differential signaling I/O pair is coupled to a differential receiver interface. The differential receiver interface includes a pair of multiplexers coupled to a differential receiver. An error detecting mechanism is coupled to the differential receiver for detecting an error. When an error is detected, an interface operating speed is reduced. True and complement sides of a differential signaling I/O pair are alternately tested by first enabling a multiplexer control of one of the multiplexers, reading data, and checking for the error; then enabling a multiplexer control of the other multiplexer, reading data, and checking for the error. Responsive to detecting a failure of a true side or a complement side, the detected failed true side or complement side is set to a reference voltage and the reduced interface operating speed is maintained for continued operation.

Abstract: An eFuse reference cell on a chip provides a reference voltage that is greater than a maximum voltage produced by an eFuse cell having an unblown eFuse on the chip but less than a minimum voltage produced by an eFuse cell having a blown eFuse on the chip. A reference current flows through a resistor and an unblown eFuse in the eFuse reference cell, producing the reference voltage. The reference voltage is used to create a mirrored copy of the reference current in the eFuse cell. The mirrored copy of the reference current flows through an eFuse in the eFuse cell. A comparator receives the reference voltage and the voltage produced by the eFuse cell. The comparator produces an output logic level responsive to the voltage produced by the eFuse cell compared to the reference voltage.

Abstract: A method and apparatus are provided for detecting degradation, such as, array degradation and logic degradation, in integrated circuits (ICs) including application specific integrated circuits (ASICs). A monitor built-in self-test (MBIST) engine coupled to at least one monitor element that is defined by predefined circuit elements in the integrated circuit. The MBIST engine is used for controlling operation of at least one monitor element for communicating with monitor bits to identify degradation of signal, timing and voltage margins.

Abstract: A method and apparatus are provided for implementing AC power dissipation control during scan operations in scannable latch designs. A scannable latch has a functional data output and a scan data output. A switching control is provided with the functional data output. The switching control is driven to prevent switching of the functional data output during at least part of the scan operations. Then the switching control is disabled enabling switching of the functional data output during functional data operations.

Abstract: An apparatus for measuring alignment of polysilicon shapes to a silicon area. Each polysilicon shape in a first plurality of polysilicon shapes has a bridging vertex positioned near the silicon area. Each polysilicon shape in a second plurality of polysilicon shapes has a bridging vertex positioned near the silicon area. The second plurality of silicon shapes is positioned on the opposite side of the silicon area from the first plurality of silicon shapes. An electrical measurement of how many of the polysilicon shapes in the first plurality of polysilicon shapes and in the second plurality of polysilicon shapes provides a measurement of alignment of the polysilicon shapes and the silicon area.

Abstract: Redundant capacity in a memory system is utilized to facilitate active monitoring of solid state memory devices in the memory system. All or part of the data stored in an active solid state memory device, and used in an active data processing system, may be copied to at least one redundant memory device, e.g., by transitioning a memory address range that was allocated to the active memory device to the redundant memory device. By doing so, memory access requests for the memory address range, which would normally be directed to the active memory device, may instead be directed to the redundant memory device, thus enabling the active memory device to be tested (e.g., via writing and reading test data patterns to the active memory device) without interrupting system access to that memory address range.

Abstract: A method, apparatus, and computer program product are provided for implementing an enhanced DRAM interface checking. An interface check mode enables interface checking using a refresh command for a DRAM. A predefined address pattern is provided for the interface address inputs during a refresh command cycle. Interface address inputs are checked for a proper value being applied and an error is signaled for unexpected results. An extended test mode includes further testing during a cycle after the refresh command cycle. Then command inputs also are checked for a proper value being applied and an error is signaled for unexpected results.

Abstract: A method and apparatus are provided for protecting electronic fuse (eFuse) information. A current balancing circuit is provided that maintains a constant current demand on the eFuse voltage supply that is sufficient to blow an eFuse. Normally the constant current is applied to a semiconductor core. When an eFuse is being blown, the constant current is diverted away from the core to the eFuse and as the eFuse blows, the constant current is again dumped to the semiconductor core. Thus, a change in current due to the transient of the eFuse being blown is not detectable and the information that an eFuse has been blown is kept secure.

Abstract: The invention is a selectable function that permits the address portion of data words to be separated from the storable content portion and that address portion to be used for different purposes without disturbing the stored contents in the memory array. The invention may be viewed as a command capability that permits analysis of signals for errors in such items as addresses, impedance calibration, timing, and component drift that develop in and between regions of an overall memory array. Techniques are advanced involving data responsive selectable array circuitry modification for such operations as address correctness verification, machine timing and component drift correction purposes. The principles are illustrated with memory systems built of Synchronous Dynamic Random Access Memory with Double Data Rate (SDRAM-DDR) elements.

Abstract: Methods and apparatus are disclosed for use in an electronic system where data is transmitted over signaling conductors from one electronic component to another using strobe signals accompanying the data. The edge or transition of the strobe signals identifies when, in a window of time, the receiving electronic component should latch the data. In many such systems, data is transmitted over the signaling conductors in the form of a plurality “beats”, of data, proper timing to latch each beat of data being identified by a transition of the strobe signal. Faults in components or errors in transmission must be handled. The present invention discloses apparatus and methods to communicate conditions relevant to data transmitted without requiring additional signaling conductors. The present invention discloses selecting a message from a plurality of messages, encoding the selected message, and transmitting the encoded message on existing strobe lines to communicate the condition encountered.

Abstract: Methods and apparatus are disclosed that allow an electronic system implemented with field effect transistors (FETs) to reduce threshold voltage shifts caused by bias temperature instability (BTI). BTI caused VT shifts accumulate when an FET is in a particular voltage stress condition. Many storage elements in an electronic system store the same data for virtually the life of the system, resulting in significant BTI caused VT shifts in FETs in the storage elements. An embodiment of the invention ensures that a particular storage element is in a first state for a first portion of time the electronic system operates, during which data is stored in a storage element in a first phase, and that the particular storage element is in a second state for a second portion of time the electronic system operates, during which data is stored in the storage element in a second phase.

Abstract: A method and testing circuit are provided for tracking transistor stress degradation. A first array of P-channel field effect transistors (PFETs) is connected in parallel. The first array of PFETs is stressed by applying a low gate input and a high source and a high drain to the PFETs during a stress period. The first array of PFETs is tested by operating the PFETs in a saturated region during a test period. A reference array of PFETs is not stressed during the stress period. The reference array of PFETs is activated for testing to compare a saturated drain current performance with the first array of PFETs during the test period.

Abstract: Methods and apparatus are disclosed for use in an electronic system where data is transmitted over signaling conductors from one electronic component to another using strobe signals accompanying the data. The edge or transition of the strobe signals identifies when, in a window of time, the receiving electronic component should latch the data. In many such systems, data is transmitted over the signaling conductors in the form of a plurality “beats”, of data, proper timing to latch each beat of data being identified by a transition of the strobe signal. Faults in components or errors in transmission must be handled. The present invention discloses apparatus and methods to communicate conditions relevant to data transmitted without requiring additional signaling conductors. The present invention discloses selecting a message from a plurality of messages, encoding the selected message, and transmitting the encoded message on existing strobe lines to communicate the condition encountered.

Abstract: An improved and much simplified method to access data banks in a memory system which provides the option of opening more than one bank in a single command. This is especially useful to achieve bursts of data across bank boundaries in a memory system of synchronous dynamic random access memory cards having fast memory bus speeds. The method decodes signals to generate a single command which may open one or more memory bank at a time. Logic can increment the banks, decrement a bank counter, and, if necessary, increment/decrement a row and/or uniquely address a column so that continual data bursts can be achieved seamlessly across bank boundaries in synchronous dynamic random access memory systems. The data banks may be opened all at once, or can be opened sequentially in a staggered manner according to a synchronous or asynchronous, with respect to the memory clock, time delay During that time delay a nop command or a chip deselect command may execute.

Abstract: A clocked memory device includes a programming mechanism that allows the write recovery time during a command with auto precharge enabled to be dynamically set to some function of the input clock. In the preferred embodiments, the programming mechanism includes a control register with programmable bits that allows specifying the write recovery time according to the bit values written to the control register. For example, write recovery time could be specified as a whole or fractional number of clock cycles. By specifying the write recovery time as a function of the clock that may be dynamically set, the clocked memory device may be used at its highest performance capabilities over a wide range of operating frequencies.

Abstract: The invention is a selectable function that permits the address portion of data words to be separated from the storable content portion and that address portion to be used for different purposes without disturbing the stored contents in the memory array. The invention may be viewed as a command capability that permits analysis of signals for errors in such items as addresses, impedance calibration, timing, and component drift that develop in and between regions of an overall memory array.