Patents by Inventor William R. Harshbarger
William R. Harshbarger has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 8002896Abstract: A shadow frame and framing system for semiconductor fabrication equipment comprising a rectangular frame having four edges, the edges forming an interior lip with a top surface and an bottom engagement surface; and a cross beam disposed between at least two edges of the frame, the cross beam having a top surface and a bottom engagement surface, the engagement surface of the cross beam configured to be flush with the engagement surface of the lip; wherein one or more of the engagement surfaces are configured to cover metal interconnect bonding areas on a carrier disposed below the frame. The shadow frame is particularly useful in plasma enhanced chemical vapor deposition (PECVD) applications used to make active matrix liquid crystal displays (AMLCDs) and solar cells.Type: GrantFiled: October 11, 2005Date of Patent: August 23, 2011Assignee: Applied Materials, Inc.Inventors: Sakae Tanaka, Qunhua Wang, Sanjay Yadav, Quanyuan Shang, William R. Harshbarger
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Patent number: 7915114Abstract: Method of fabricating a thin-film transistor (TFT) in which a gate metal is deposited onto a substrate in order to form the gate of the thin-film transistor. The substrate may be an insulative substrate or a color filter. In a first method, the gate metal is subjected to an H2 plasma. After subjecting the gate metal to an H2 plasma, the gate insulating film is deposited onto the gate. In a second method, first and second layers of gate insulating film are respectively deposited on the gate at a first and second deposition rates. One layer is deposited under H2 or argon dilution conditions and has improved insulating conditions while the other layer serves to lower the overall compressive stress of the dual layer gate insulator. In a third method, an n+ silicon film is formed on a substrate by maintaining a flow of silane, phosphine and hydrogen gas into a processing chamber at substrate temperatures of about 300° C. or less.Type: GrantFiled: November 27, 2007Date of Patent: March 29, 2011Assignee: Applied Materials, Inc.Inventors: Mark Hsiao, Dong-Kil Yim, Takako Takehara, Quanyuan Shang, William R. Harshbarger, Woong-Kwon Kim, Duk-Chul Yun, Youn-Gyung Chang
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Patent number: 7300829Abstract: Method of fabricating a thin-film transistor (TFT) in which a gate metal is deposited onto a substrate in order to form the gate of the thin-film transistor. The substrate may be an insulative substrate or a color filter. In a first method, the gate metal is subjected to an H2 plasma. After subjecting the gate metal to an H2 plasma, the gate insulating film is deposited onto the gate. In a second method, first and second layers of gate insulating film are respectively deposited on the gate at a first and second deposition rates. One layer is deposited under H2 or argon dilution conditions and has improved insulating conditions while the other layer serves to lower the overall compressive stress of the dual layer gate insulator. In a third method, an n+ silicon film is formed on a substrate by maintaining a flow of silane, phosphine and hydrogen gas into a processing chamber at substrate temperatures of about 300° C. or less.Type: GrantFiled: June 2, 2003Date of Patent: November 27, 2007Assignee: Applied Materials, Inc.Inventors: Mark Hsiao, Dong-Kil Yim, Takako Takehara, Quanyuan Shang, William R. Harshbarger, Woong-Kwon Kim, Duk-Chul Yun, Youn-Gyung Chang
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Patent number: 7160392Abstract: A substrate support assembly and method for dechucking a substrate is provided. In one embodiment, a support assembly includes a substrate support having a support surface, a first set of lift pins and one or more other lift pins movably disposed through the substrate support. The first set of lift pins and the one or more lift pins project from the support surface when the pins are in an actuated position. When in the actuated position, the first set of lift pins project a longer distance from the support surface than the one or more other lift pins. In another aspect of the invention, a method for dechucking a substrate from a substrate support is provided. In one embodiment, the method includes the steps of projecting a first set of lift pins a first distance above a surface of a substrate support, and projecting a second set of lift pins a second distance above the surface of the substrate support that is less than the first distance.Type: GrantFiled: October 17, 2003Date of Patent: January 9, 2007Assignee: Applied Materials, Inc.Inventors: Quanyuan Shang, William R. Harshbarger, Robert L. Greene, Ichiro Shimizu
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Patent number: 7122962Abstract: A plasma display panel including a low k dielectric layer. In one embodiment, the dielectric layer is comprises a fluorine-doped silicon oxide layer such as an SiOF layer. In another embodiment, the dielectric layer comprises a Black Diamond™ layer. In certain embodiments, a capping layer such as SiN or SiON is deposited over the dielectric layer.Type: GrantFiled: June 11, 2003Date of Patent: October 17, 2006Assignee: Applied Materials, Inc.Inventors: Kam S. Law, Quanyuan Shang, Takako Takehara, Taekyung Won, William R. Harshbarger, Dan Maydan
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Patent number: 7086918Abstract: An organic electroluminescent device comprising an anode layer on a substrate, an organic layer on the anode layer, and a cathode layer on the organic layer. In one embodiment, the cathode layer is subjected to H2 plasma prior to deposition of a protective layer over the cathode. In another embodiment, the organic electroluminescent device is encapsulated with an inner encapsulation layer on the cathode layer, and an outer encapsulation layer on the inner encapsulation layer. The inner layer is optimized for adhesion to the cathode layer.Type: GrantFiled: December 11, 2002Date of Patent: August 8, 2006Assignee: Applied Materials, Inc.Inventors: Mark Hsiao, Takako Takehara, Quanyuan Shang, William R. Harshbarger
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Patent number: 6981508Abstract: Provided herein is a method for cleaning a process chamber for semiconductor and/or flat panel display manufacturing. This method comprises the steps of converting a non-cleaning feed gas to a cleaning gas in a remote location and then delivering the cleaning gas to the process chamber for cleaning. Such method may further comprise the step of activating the cleaning gas outside the chamber before the delivery of the gas to the chamber. Also provided is a method of eliminating non-cleaning feed gas from the cleaning gas by cryo condensation.Type: GrantFiled: May 27, 2004Date of Patent: January 3, 2006Assignee: Applied Materials, Inc.Inventors: Quanyuan Shang, Sanjay Yadav, William R. Harshbarger, Kam S. Law
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Patent number: 6962732Abstract: Processes for controlling thickness uniformity of thin organosilicate films as they are deposited on a substrate, and as they finally result. During deposition of the film, which may be accomplished by CVD, PECVD, rapid thermal processing or the like, the substrate temperature is controlled to establish a temperature profile particularly suited to the extreme temperature sensitivities of the deposition rates of organosilicate films such as those deposited from TEOS as a source material.Type: GrantFiled: August 23, 2001Date of Patent: November 8, 2005Assignee: Applied Materials, Inc.Inventors: Tae Kyung Won, Takako Takehara, William R. Harshbarger
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Patent number: 6960263Abstract: A shadow frame and framing system for semiconductor fabrication equipment comprising a rectangular frame having four edges, the edges forming an interior lip with a top surface and an bottom engagement surface; and a cross beam disposed between at least two edges of the frame, the cross beam having a top surface and a bottom engagement surface, the engagement surface of the cross beam configured to be flush with the engagement surface of the lip; wherein one or more of the engagement surfaces are configured to cover metal interconnect bonding areas on a carrier disposed below the frame. The shadow frame is particularly useful in plasma enhanced chemical vapor deposition (PECVD) applications used to make active matrix liquid crystal displays (AMLCDs) and solar cells.Type: GrantFiled: April 25, 2002Date of Patent: November 1, 2005Assignee: Applied Materials, Inc.Inventors: Sakae Tanaka, Qunhua Wang, Sanjay Yadav, Quanyuan Shang, William R. Harshbarger
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Patent number: 6880561Abstract: A process for removing residue from the interior of a semiconductor process chamber using molecular fluorine gas (F2) as the principal precursor reagent. In one embodiment a portion of the molecular fluorine is decomposed in a plasma to produce atomic fluorine, and the resulting mixture of atomic fluorine and molecular fluorine is supplied to the chamber whose interior is to be cleaned. In another embodiment the molecular fluorine gas cleans the semiconductor process chamber without any plasma excitation. Molecular fluorine gas has the advantage of not being a global warming gas, unlike fluorine-containing gas compounds conventionally used for chamber cleaning such as NF3, C2F6 and SF6.Type: GrantFiled: May 5, 2003Date of Patent: April 19, 2005Assignee: Applied Materials, Inc.Inventors: Haruhiro Harry Goto, William R. Harshbarger, Quanyuan Shang, Kam S. Law
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Patent number: 6863077Abstract: A system for processing substrates within a chamber and for cleaning accumulated material from chamber components is provided. The system includes a reactive species generator adapted to generate a reactive gas species for chemically etching accumulated material from chamber components, and a processing chamber having at least one component with a mirror polished surface which is exposed to the reactive species. Preferably to have the greatest impact on chamber cleaning efficiency, the mirror polished surface is a surface of a component such as a gas distribution plate or a backing plate, and/or is a surface of a plurality of smaller components (e.g., chamber wall liners, a gas conductance line, etc.) so as to constitute a large percentage of the surface area exposed to the reactive species. Most preferably all bare aluminum surfaces which the reactive species contacts are mirror polished.Type: GrantFiled: July 15, 2002Date of Patent: March 8, 2005Assignee: Applied Materials, Inc.Inventors: Sheng Sun, Quanyuan Shang, William R. Harshbarger, Robert I. Greene
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Patent number: 6858548Abstract: A process for depositing a low dielectric constant layer (k<3) on a flat panel display and a flat panel display. The process includes reacting one or more organosilicon compounds with an oxygen containing compound at an RF power level from about 0.345 W/cm2 to about 1.265 W/cm2. The flat panel display includes a plasma display panel having a first substrate, a plurality of barriers deposited on the first substrate, a second substrate, a low dielectric constant layer (k<3) deposited on the second substrate, and a plurality of ground electrodes formed between the barriers and the dielectric layer.Type: GrantFiled: April 18, 2002Date of Patent: February 22, 2005Assignee: Applied Materials, Inc.Inventors: Tae Kyung Won, Quanyuan Shang, William R. Harshbarger
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Patent number: 6843258Abstract: Provided herein is a method for cleaning a process chamber for semiconductor and/or flat panel display manufacturing. This method comprises the steps of converting a non-cleaning feed gas to a cleaning gas in a remote location and then delivering the cleaning gas to the process chamber for cleaning. Such method may further comprise the step of activating the cleaning gas outside the chamber before the delivery of the gas to the chamber. Also provided is a method of eliminating non-cleaning feed gas from the cleaning gas by cryo condensation.Type: GrantFiled: December 19, 2000Date of Patent: January 18, 2005Assignee: Applied Materials, Inc.Inventors: Quanyuan Shang, Sanjay Yadav, William R. Harshbarger, Kam S. Law
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Patent number: 6827987Abstract: Provided herein is a method of reducing an electrostatic charge on a substrate during a plasma enhanced chemical vapor deposition process, comprising the step of depositing a conductive layer onto a top surface of a susceptor support plate disposed within a deposition chamber wherein the conductive layer dissipates the electrostatic charge on the bottom surface of the substrate during a plasma enhanced chemical vapor deposition process. Also provided are a method of depositing a thin film during a plasma enhanced chemical vapor deposition process using the methods disclosed herein and a conductive susceptor.Type: GrantFiled: July 27, 2001Date of Patent: December 7, 2004Assignee: Applied Materials, Inc.Inventors: Tae Kyung Won, Soo Young Choi, Takako Takehara, William R. Harshbarger
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Publication number: 20040241920Abstract: Method of fabricating a thin-film transistor (TFT) in which a gate metal is deposited onto a substrate in order to form the gate of the thin-film transistor. The substrate may be an insulative substrate or a color filter. In a first method, the gate metal is subjected to an H2 plasma. After subjecting the gate metal to an H2 plasma, the gate insulating film is deposited onto the gate. In a second method, first and second layers of gate insulating film are respectively deposited on the gate at a first and second deposition rates. One layer is deposited under H2 or argon dilution conditions and has improved insulating conditions while the other layer serves to lower the overall compressive stress of the dual layer gate insulator. In a third method, an n+ silicon film is formed on a substrate by maintaining a flow of silane, phosphine and hydrogen gas into a processing chamber at substrate temperatures of about 300° C. or less.Type: ApplicationFiled: June 2, 2003Publication date: December 2, 2004Applicants: Applied Materials, Inc., LG Philips Displays USA, Inc.Inventors: Mark Hsiao, Dong-Kil Yim, Takako Takehara, Quanyuan Shang, William R. Harshbarger, Woong-Kwon Kim, Duk-Chul Yun, Youn-Gyung Chang
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Patent number: 6825134Abstract: A method of film layer deposition is described. A film layer is deposited using a cyclical deposition process. The cyclical deposition process consists essentially of a continuous flow of one or more process gases and the alternate pulsing of a precursor and energy to form a film on a substrate structure.Type: GrantFiled: September 24, 2002Date of Patent: November 30, 2004Assignee: Applied Materials, Inc.Inventors: Kam S. Law, Quanyuan Shang, William R. Harshbarger, Dan Maydan, Soo Young Choi, Beom Soo Park, Sanjay Yadav, John M. White
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Publication number: 20040216768Abstract: Provided herein is a method for cleaning a process chamber for semiconductor and/or flat panel display manufacturing. This method comprises the steps of converting a non-cleaning feed gas to a cleaning gas in a remote location and then delivering the cleaning gas to the process chamber for cleaning. Such method may further comprise the step of activating the cleaning gas outside the chamber before the delivery of the gas to the chamber. Also provided is a method of eliminating non-cleaning feed gas from the cleaning gas by cryo condensation.Type: ApplicationFiled: May 27, 2004Publication date: November 4, 2004Inventors: Quanyuan Shang, Sanjay Yadav, William R. Harshbarger, Kam S. Law
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Publication number: 20040113542Abstract: An organic electroluminescent device comprising an anode layer on a substrate, an organic layer on the anode layer, and a cathode layer on the organic layer. In one embodiment, the cathode layer is subjected to H2 plasma prior to deposition of a protective layer over the cathode. In another embodiment, the organic electroluminescent device is encapsulated with an inner encapsulation layer on the cathode layer, and an outer encapsulation layer on the inner encapsulation layer. The inner layer is optimized for adhesion to the cathode layer.Type: ApplicationFiled: December 11, 2002Publication date: June 17, 2004Applicant: Applied Materials, Inc.Inventors: Mark Hsiao, Takako Takehara, Quanyuan Shang, William R. Harshbarger
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Publication number: 20040089239Abstract: A substrate support assembly and method for dechucking a substrate is provided. In one embodiment, a support assembly includes a substrate support having a support surface, a first set of lift pins and one or more other lift pins movably disposed through the substrate support. The first set of lift pins and the one or more lift pins project from the support surface when the pins are in an actuated position. When in the actuated position, the first set of lift pins project a longer distance from the support surface than the one or more other lift pins. In another aspect of the invention, a method for dechucking a substrate from a substrate support is provided. In one embodiment, the method includes the steps of projecting a first set of lift pins a first distance above a surface of a substrate support, and projecting a second set of lift pins a second distance above the surface of the substrate support that is less than the first distance.Type: ApplicationFiled: October 17, 2003Publication date: May 13, 2004Applicant: Applied Materials, Inc.Inventors: Quanyuan Shang, William R. Harshbarger, Robert I. Greene, Ichiro Shimizu
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Patent number: 6676761Abstract: A substrate support assembly and method for dechucking a substrate is provided. In one embodiment, a support assembly includes a substrate support having a support surface, a first set of lift pins and one or more other lift pins movably disposed through the substrate support. The first set of lift pins and the one or more lift pins project from the support surface when the pins are in an actuated position. When in the actuated position, the first set of lift pins project a longer distance from the support surface than the one or more other lift pins. In another aspect of the invention, a method for dechucking a substrate from a substrate support is provided. In one embodiment, the method includes the steps of projecting a first set of lift pins a first distance above a surface of a substrate support, and projecting a second set of lift pins a second distance above the surface of the substrate support that is less than the first distance.Type: GrantFiled: December 2, 2002Date of Patent: January 13, 2004Assignee: Applied Materials, Inc.Inventors: Quanyuan Shang, William R. Harshbarger, Robert L. Greene, Ichiro Shimizu