Abstract: A plasma display panel including a low k dielectric layer. In one embodiment, the dielectric layer is comprises a fluorine-doped silicon oxide layer such as an SiOF layer. In another embodiment, the dielectric layer comprises a Black Diamond™ layer. In certain embodiments, a capping layer such as SiN or SiON is deposited over the dielectric layer.

Abstract: A cluster tool for forming a poly-Si layer on a substrate comprises (i) a first chamber for depositing silicon onto the substrate to form an a-Si layer on the substrate, (ii) a second chamber for depositing onto the a-Si layer a metal that is capable of inducing nucleation sites in a-Si, and (iii) a third chamber for annealing the &agr;-Si layer, thereby forming the poly-Si layer on the substrate. In one embodiment, the second chamber is a plasma enhanced chemical vapor deposition (PECVD) reactor that includes an upper electrode. An outer surface of the upper electrode is made of a metal that is capable of inducing the nucleation sites. In this embodiment, the metal is deposited onto the substrate from the upper electrode when a plasma is generated between the upper electrode and a lower electrode in the PECVD reactor, thereby causing deposition of the metal onto the substrate.

Abstract: A shadow frame and framing system for semiconductor fabrication equipment comprising a rectangular frame having four edges, the edges forming an interior lip with a top surface and an bottom engagement surface; and a cross beam disposed between at least two edges of the frame, the cross beam having a top surface and a bottom engagement surface, the engagement surface of the cross beam configured to be flush with the engagement surface of the lip; wherein one or more of the engagement surfaces are configured to cover metal interconnect bonding areas on a carrier disposed below the frame. The shadow frame is particularly useful in plasma enhanced chemical vapor deposition (PECVD) applications used to make active matrix liquid crystal displays (AMLCDs) and solar cells.

Abstract: A process for depositing a low dielectric constant layer (k<3) on a flat panel display and a flat panel display. The process includes reacting one or more organosilicon compounds with an oxygen containing compound at an RF power level from about 0.345 W/cm2 to about 1.265 W/cm2. The flat panel display includes a plasma display panel having a first substrate, a plurality of barriers deposited on the first substrate, a second substrate, a low dielectric constant layer (k<3) deposited on the second substrate, and a plurality of ground electrodes formed between the barriers and the dielectric layer.

Abstract: A process for removing residue from the interior of a semiconductor process chamber using molecular fluorine gas (F2) as the principal precursor reagent. In one embodiment a portion of the molecular fluorine is decomposed in a plasma to produce atomic fluorine, and the resulting mixture of atomic fluorine and molecular fluorine is supplied to the chamber whose interior is to be cleaned. In another embodiment the molecular fluorine gas cleans the semiconductor process chamber without any plasma excitation. Molecular fluorine gas has the advantage of not being a global warming gas, unlike fluorine-containing gas compounds conventionally used for chamber cleaning such as NF3, C2F6 and SF6.

Abstract: A method of film layer deposition is described. A film layer is deposited using a cyclical deposition process. The cyclical deposition process consists essentially of a continuous flow of one or more process gases and the alternate pulsing of a precursor and energy to form a film on a substrate structure.

Abstract: A plasma display panel including a low k dielectric layer. In one embodiment, the dielectric layer is comprises a fluorine-doped silicon oxide layer such as an SiOF layer. In another embodiment, the dielectric layer comprises a Black Diamond™ layer. In certain embodiments, a capping layer such as SiN or SiON is deposited over the dielectric layer.

Abstract: A process for selectively etching silicon from a workpiece without etching silicon oxide or silicon nitride. The principal etchant gas is molecular fluorine gas (F2) that is not excited to a plasma state.

Abstract: A substrate support assembly and method for dechucking a substrate is provided. In one embodiment, a support assembly includes a substrate support having a support surface, a first set of lift pins and one or more other lift pins movably disposed through the substrate support. The first set of lift pins and the one or more lift pins project from the support surface when the pins are in an actuated position. When in the actuated position, the first set of lift pins project a longer distance from the support surface than the one or more other lift pins. In another aspect of the invention, a method for dechucking a substrate from a substrate support is provided. In one embodiment, the method includes the steps of projecting a first set of lift pins a first distance above a surface of a substrate support, and projecting a second set of lift pins a second distance above the surface of the substrate support that is less than the first distance.

Abstract: A system for processing substrates within a chamber and for cleaning accumulated material from chamber components is provided. The system includes a reactive species generator adapted to generate a reactive gas species for chemically etching accumulated material from chamber components, and a processing chamber having at least one fluoropolymer coated component which is exposed to the reactive species. Preferably to have the greatest impact on chamber cleaning efficiency, the fluoropolymer coated component(s) are large components such as a gas distribution plate or a backing plate, and/or a plurality of smaller components (e.g., a shadow frame, chamber wall liners, a susceptor, a gas conductance line) so as to constitute a large percentage of the surface area exposed to the reactive species. Most preferably all surfaces which the reactive species contacts are coated with fluoropolymer.

Abstract: Processes for controlling thickness uniformity of thin organosilicate films as they are deposited on a substrate, and as they finally result. During deposition of the film, which may be accomplished by CVD, PECVD, rapid thermal processing or the like, the substrate temperature is controlled to establish a temperature profile particularly suited to the extreme temperature sensitivities of the deposition rates of organosilicate films such as those deposited from TEOS as a source material.

Abstract: Provided herein is a method of reducing an electrostatic charge on a substrate during a plasma enhanced chemical vapor deposition process, comprising the step of depositing a conductive layer onto a top surface of a susceptor support plate disposed within a deposition chamber wherein the conductive layer dissipates the electrostatic charge on the bottom surface of the substrate during a plasma enhanced chemical vapor deposition process. Also provided are a method of depositing a thin film during a plasma enhanced chemical vapor deposition process using the methods disclosed herein and a conductive susceptor.

Abstract: A process for selectively etching silicon from a workpiece without etching silicon oxide or silicon nitride. The principal etchant gas is molecular fluorine gas (F2) that is not excited to a plasma state.

Abstract: A method for the deposition of a silicon dioxide film onto a substrate using plasma enhanced chemical vapor deposition and TEOS is disclosed. The method includes controlling the deposition rate of silicon dioxide on a substrate by pulsing the radio frequency power supply used to generate a TEOS oxide plasma. The obtained silicon dioxide film is good in electrical and mechanical film properties for the application of forming thin film transistors.

Abstract: A plasma display panel including a low k dielectric layer. In one embodiment, the dielectric layer is comprises a fluorine-doped silicon oxide layer such as an SiOF layer. In another embodiment, the dielectric layer comprises a Black Diamond™ layer. In certain embodiments, a capping layer such as SiN or SiON is deposited over the dielectric layer.

Abstract: A system for processing substrates within a chamber and for cleaning accumulated material from chamber components is provided. The system includes a reactive species generator adapted to generate a reactive gas species for chemically etching accumulated material from chamber components, and a processing chamber having at least one component with a mirror polished surface which is exposed to the reactive species. Preferably to have the greatest impact on chamber cleaning efficiency, the mirror polished surface is a surface of a component such as a gas distribution plate or a backing plate, and/or is a surface of a plurality of smaller components (e.g., chamber wall liners, a gas conductance line, etc.) so as to constitute a large percentage of the surface area exposed to the reactive species. Most preferably all bare aluminum surfaces which the reactive species contacts are mirror polished.

Abstract: A method for the deposition of a silicon dioxide film onto a substrate using plasma enhanced chemical vapor deposition and TEOS is disclosed. The method includes controlling the deposition rate of silicon dioxide on a substrate by pulsing the radio frequency power supply used to generate a TEOS oxide plasma. The obtained silicon dioxide film is good in electrical and mechanical film properties for the application of forming thin film transistors.

Abstract: Deposition methods for preparing amorphous silicon based films with controlled resistivity and low stress are described. Such films can be used as the interlayer in FED manufacturing. They can also be used in other electronic devices which require films with controlled resistivity in the range between those of an insulator and of a conductor. The deposition methods described in the present invention employ the method of chemical vapor deposition or plasma-enhanced chemical vapor deposition; other film deposition techniques, such as physical vapor deposition, also may be used. In one embodiment, an amorphous silicon-based film is formed by introducing into a deposition chamber a silicon-based volatile, a conductivity-increasing volatile including one or more components for increasing the conductivity of the amorphous silicon-based film, and a conductivity-decreasing volatile including one or more components for decreasing the conductivity of the amorphous silicon-based film.

Abstract: A system for processing substrates within a chamber and for cleaning accumulated material from chamber components is provided. The system includes a reactive species generator adapted to generate a reactive gas species for chemically etching accumulated material from chamber components, and a processing chamber having at least one component with a mirror polished surface which is exposed to the reactive species. Preferably to have the greatest impact on chamber cleaning efficiency, the mirror polished surface is a surface of a component such as a gas distribution plate or a backing plate, and/or is a surface of a plurality of smaller components (e.g., chamber wall liners, a gas conductance line, etc.) so as to constitute a large percentage of the surface area exposed to the reactive species. Most preferably all bare aluminum surfaces which the reactive species contacts are mirror polished.

Abstract: Provided herein is a method for cleaning a process chamber for semiconductor and/or flat panel display manufacturing. This method comprises the steps of converting a non-cleaning feed gas to a cleaning gas in a remote location and then delivering the cleaning gas to the process chamber for cleaning. Such method may further comprise the step of activating the cleaning gas outside the chamber before the delivery of the gas to the chamber. Also provided is a method of eliminating non-cleaning feed gas from the cleaning gas by cryo condensation.