Abstract: A method for fabricating substrate-free LED chips has a multilayer semiconductor structure at least 10 microns thick provided on a growth substrate. One or more arrays of parallel streets are etched into the multilayer semiconductor structure using a first pulsed laser beam. By scanning a second pulsed laser beam through the growth substrate to the multilayer semiconductor structure, the LED chips are detached from the growth substrate while simultaneously forming surface features on the chips.

Abstract: A substrate-free semiconducting sheet has an array of semiconducting elements dispersed in a matrix material. The matrix material is bonded to the edge surfaces of the semiconducting elements and the substrate-free semiconducting sheet is substantially the same thickness as the semiconducting elements.

Abstract: A wavelength conversion chip is formed by depositing a wavelength conversion material on a substrate to form a layer, removing the resulting wavelength conversion layer from the substrate and then segmenting the wavelength conversion layer into a plurality of wavelength conversion chips. The wavelength conversion material can be annealed by thermal annealing or radiation annealing to increase the wavelength conversion efficiency of the chips or to sinter the wavelength conversion material to form a ceramic material. Optical coatings, vias, light extraction elements, electrical connections or electrical bond pads can be fabricated on the wavelength conversion chips.

Abstract: LEDs are mounted onto a flat, thermally conductive, substrate, which is folded to form a light recycling cavity. A planar substrate is first coated with a metal layer, which is patterned to electrically connect the LEDs and to form bonding pads for wirebonds to connect the LEDs to external circuitry. The LEDs are mounted on the substrate. The substrate is then scribed on the backside to form the folds. The LED dies are then attached onto the metal islands (pads) defined on the substrate and wirebonds are used to connect the top side of the LED to adjacent patterned metal islands (pads) on the substrate. The substrate is then folded into a light recycling cavity where the LEDs are facing the inside of the cavity.

Abstract: Thin freestanding nitride films are used as a growth substrate to enhance the optical, electrical, mechanical and mobility of nitride based devices and to enable the use of thick transparent conductive oxides. Optoelectronic devices such as LEDs, laser diodes, solar cells, biomedical devices, thermoelectrics, and other optoelectronic devices may be fabricated on the freestanding nitride films. The refractive index of the freestanding nitride films can be controlled via alloy composition. Light guiding or light extraction optical elements may be formed based on freestanding nitride films with or without layers. Dual sided processing is enabled by use of these freestanding nitride films. This enables more efficient output for light emitting devices and more efficient energy conversion for solar cells.

Abstract: A light emitting diode light source with mirrored surfaces is formed on a planar substrate which, when folded, forms both a light recycling cavity and an optical taper at the end of the light recycling cavity.

Abstract: LEDs are mounted onto a flat, thermally conductive, substrate, which is folded to form a light recycling cavity. A planar substrate is first coated with a metal layer, which is patterned to electrically connect the LEDs and to form bonding pads for wirebonds to connect the LEDs to external circuitry. The LEDs are mounted on the substrate. The substrate is then scribed on the backside to form the folds. The LED dies are then attached onto the metal islands (pads) defined on the substrate and wirebonds are used to connect the top side of the LED to adjacent patterned metal islands (pads) on the substrate. The substrate is then folded into a light recycling cavity where the LEDs are facing the inside of the cavity.

Abstract: Thin freestanding nitride films are used as a growth substrate to enhance the optical, electrical, mechanical and mobility of nitride based devices and to enable the use of thick transparent conductive oxides. Optoelectronic devices such as LEDs, laser diodes, solar cells, biomedical devices, thermoelectrics, and other optoelectronic devices may be fabricated on the freestanding nitride films. The refractive index of the freestanding nitride films can be controlled via alloy composition. Light guiding or light extraction optical elements may be formed based on freestanding nitride films with or without layers. Dual sided processing is enabled by use of these freestanding nitride films. This enables more efficient output for light emitting devices and more efficient energy conversion for solar cells.

Abstract: The invention is a thermal recycling system for converting lower quality thermal sources into higher quality thermal sources. In one embodiment, at least one photonic crystal radiator is combined with at least one substantially different radiator within a low loss thermal recycling cavity. Thermal recycling is based on the use of spectrum, polarization and temporal restrictions. These systems can be used in cooling, heating, and energy production.

Abstract: Surface modification of individual nitride semiconductor layers occurs between growth stages to enhance the performance of the resulting multiple layer semiconductor structure device formed from multiple growth stages. Surface modifications may include, but are not limited, to laser patterning, lithographic patterning (with the scale ranging from 10 microns to a few angstroms), actinic radiation modifications, implantation, diffusional doping and combinations of these methods. The semiconductor structure device has enhanced crystal quality, reduced phonon reflections, improved light extraction, and an increased emission area. The ability to create these modifications is enabled by the thickness of the HVPE growth of the GaN semiconductor layer.

Abstract: A solid-state light source includes at least one stack of light emitting elements. The elements are an inorganic light emitting diode chip and at least one wavelength conversion chip or the elements are a plurality of light emitting diode chips and one or more optional wavelength conversion chips. The wavelength conversion chip may include an electrical interconnection means. The light emitting diode chip may include at least one GaN-based semiconductor layer that is at least ten microns thick and that is fabricated by hydride vapor phase epitaxy. A method is described for fabricating the solid-state light source.

Abstract: A wavelength conversion chip is formed by depositing a wavelength conversion material on a substrate to form a layer, removing the resulting wavelength conversion layer from the substrate and then segmenting the wavelength conversion layer into a plurality of wavelength conversion chips. The wavelength conversion material can be annealed by thermal annealing or radiation annealing to increase the wavelength conversion efficiency of the chips or to sinter the wavelength conversion material to form a ceramic material. Optical coatings, vias, light extraction elements, electrical connections or electrical bond pads can be fabricated on the wavelength conversion chips.

Abstract: High temperature semiconducting materials in a freestanding epitaxial chip enables the use of high temperature interconnect and bonding materials. Process materials can be used which cure, fire, braze, or melt at temperatures greater than 400 degrees C. These include, but are not limited to, brazing alloys, laser welding, high-temperature ceramics and glasses. High temperature interconnect and bonding materials can additionally exhibit an index of refraction intermediate to that of the freestanding epitaxial chip and its surrounding matrix. High index, low melting point glasses provide a hermetic seal of the semiconductor device and also index match the freestanding epitaxial chip thereby increasing extraction efficiency. In this manner, a variety of organic free semiconducting devices, such as solid-sate lighting sources, can be created which exhibit superior life, efficiency, and environmental stability.

Abstract: Rapid thermal processing of freestanding gallium nitride wafers is used to form semiconductor devices. This high speed process is enabled by the low thermal inertia of the growth substrate and the use of a low thermal inertia susceptor. The use of a low thermal inertia susceptor consisting of, but not limited to, silicon carbide, silicon carbide coated graphite, and/or other platen materials. Infrared (IR) heating is a preferred approach for increasing the temperature of the freestanding gallium nitride films via the susceptor but Radio Frequency (RF) and other methods are also approaches.

Abstract: A solid-state light source includes at least one stack of light emitting elements. The elements are an inorganic light emitting diode chip and at least one wavelength conversion chip or the elements are a plurality of light emitting diode chips and one or more optional wavelength conversion chips. The wavelength conversion chip may include an electrical interconnection means. The light emitting diode chip may include at least one GaN-based semiconductor layer that is at least ten microns thick and that is fabricated by hydride vapor phase epitaxy. A method is described for fabricating the solid-state light source.

Abstract: A wavelength conversion chip is formed by depositing a wavelength conversion material on a substrate to form a layer, removing the resulting wavelength conversion layer from the substrate and then segmenting the wavelength conversion layer into a plurality of wavelength conversion chips. The wavelength conversion material can be annealed by thermal annealing or radiation annealing to increase the wavelength conversion efficiency of the chips or to sinter the wavelength conversion material to form a ceramic material. Optical coatings, vias, light extraction elements, electrical connections or electrical bond pads can be fabricated on the wavelength conversion chips.

Abstract: Thin freestanding nitride films are used as a growth substrate to enhance the optical, electrical, mechanical and mobility of nitride based devices and to enable the use of thick transparent conductive oxides. Optoelectronic devices such as LEDs, laser diodes, solar cells, biomedical devices, thermoelectrics, and other optoelectronic devices may be fabricated on the freestanding nitride films. The refractive index of the freestanding nitride films can be controlled via alloy composition. Light guiding or light extraction optical elements may be formed based on freestanding nitride films with or without layers. Dual sided processing is enabled by use of these freestanding nitride films. This enables more efficient output for light emitting devices and more efficient energy conversion for solar cells.

Abstract: A LED light source is integrated with a heatsink and a collimator. Four isolated heatsinks form an optical taper in which a single color LED is mounted. The LEDs are arranged to form a reflective light recycling cavity. Up to four different colors can be combined inside the light recycling cavity to form a uniform and homogenous mixing of the colors at the exit aperture of the light recycling cavity and/or the exit aperture of the collimator/heatsink.

Abstract: The invention is method for fabricating light emitting diodes. A layered semiconductor structure is provided on a growth substrate. The method includes using a pulsed laser to form an interfacial layer between the layered semiconductor structure and the growth substrate for subsequent substrate detachment and to simultaneously form light extracting elements on the layered semiconductor structure. The method reduces the number of steps required to fabricate a light emitting diode.

Abstract: A color stabilized light source has a thermally conductive luminescent element in conjunction with a light emitting diode. A thermal pathway through the LED allows the thermally conductive luminescent element to maintain its output level even at high flux levels.