Patents by Inventor Wim Tjibbo Tel
Wim Tjibbo Tel has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 11199782Abstract: A lithographic apparatus and associated method of controlling a lithographic process. The lithographic apparatus has a controller configured to define a control grid associated with positioning of a substrate within the lithographic apparatus. The control grid is based on a device layout, associated with a patterning device, defining a device pattern which is to be, and/or has been, applied to the substrate in a lithographic process.Type: GrantFiled: November 22, 2017Date of Patent: December 14, 2021Assignee: ASML Netherlands B.V.Inventors: Wim Tjibbo Tel, Hans Erik Kattouw, Valerio Altini, Bearrach Moest
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Publication number: 20210356874Abstract: A method including obtaining (i) measurements of a parameter of the feature, (ii) data related to a process variable of a patterning process, (iii) a functional behavior of the parameter defined as a function of the process variable based on the measurements of the parameter and the data related to the process variable, (iv) measurements of a failure rate of the feature, and (v) a probability density function of the process variable for a setting of the process variable, converting the probability density function of the process variable to a probability density function of the parameter based on a conversion function, where the conversion function is determined based on the function of the process variable, and determining a parameter limit of the parameter based on the probability density function of the parameter and the measurements of the failure rate.Type: ApplicationFiled: July 30, 2021Publication date: November 18, 2021Applicant: ASML NETHERLANDS B.V.Inventors: Abraham SLACHTER, Stefan HUNSCHE, Wim Tjibbo TEL, Anton Bernhard VAN OOSTEN, Koenraad VAN INGEN SCHENAU, Gijsbert RISPENS, Brennan PETERSON
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Publication number: 20210349395Abstract: A method includes obtaining, for each particular feature of a plurality of features of a device pattern of a substrate being created using a patterning process, a modelled or simulated relation of a parameter of the patterning process between a measurement target for the substrate and the particular feature; and based on the relation and measured values of the parameter from the metrology target, generating a distribution of the parameter across at least part of the substrate for each of the features, the distribution for use in design, control or modification of the patterning process.Type: ApplicationFiled: July 19, 2021Publication date: November 11, 2021Applicant: ASML NETHERLANDS B.VInventors: Patrick WARNAAR, Patricius Aloysius Jacobus Tinnemans, Grzegorz Grzela, Everhardus Cornelis Mos, Wim Tjibbo Tel, Marinus Jochemsen, Bart Peter Bert Segers, Frank Staals
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Patent number: 11143971Abstract: A method for determining adjustment to a patterning process. The method includes obtaining a probability density function of a parameter related to a feature of a substrate subject to the patterning process based on measurements of the parameter, determining an asymmetry of the probability density function, and determining an adjustment to the patterning process based on the asymmetry of the probability density function of the parameter so as to reduce a probability of the feature having a parameter value that falls outside a range between threshold values of the parameter.Type: GrantFiled: January 14, 2019Date of Patent: October 12, 2021Assignee: ASML Netherlands B.V.Inventors: Wim Tjibbo Tel, Marc Jurian Kea, Roy Anunciado
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Patent number: 11126093Abstract: A method is proposed involving obtaining data regarding an expected focus offset during a patterning process due to topography of a region of a substrate surface. A modification of, e.g., a transmission or reflection of a region of a patterning device associated with the region of the substrate surface is determined based on the data. Using the patterning device modified according the determined modification during the patterning process mitigates an impact of the substrate topography on a parameter of the patterning process.Type: GrantFiled: May 17, 2017Date of Patent: September 21, 2021Assignee: ASML Netherlands B.V.Inventors: Richard Johannes Franciscus Van Haren, Reiner Maria Jungblut, Leon Paul Van Dijk, Willem Seine Christian Roelofs, Wim Tjibbo Tel, Stefan Hunsche, Maurits Van Der Schaar
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Patent number: 11112700Abstract: A method to improve a lithographic process of imaging a portion of a design layout onto a substrate using a lithographic apparatus, the method including computing a multi-variable cost function. The multi-variable cost function represents an interlayer characteristic, the interlayer characteristic being a function of a plurality of design variables that represent one or more characteristics of the lithographic process. The method further includes reconfiguring one or more of the characteristics of the lithographic process by adjusting one or more of the design variables and computing the multi-variable cost function with the adjusted one or more design variables, until a certain termination condition is satisfied.Type: GrantFiled: March 14, 2017Date of Patent: September 7, 2021Assignee: ASML Netherlands B.V.Inventors: Wim Tjibbo Tel, Laurent Michel Marcel Depre, Jorge Humberto Salvador Entradas
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Publication number: 20210255547Abstract: A method of determining a sampling control scheme and/or a processing control scheme for substrates processed by a device. The method uses a fingerprint model and an evolution model to generate the control scheme. The fingerprint model is based on fingerprint data for a processing parameter of at least one substrate processed by a device, and the evolution model represents variation of the fingerprint data over time. The fingerprint model and the evolution model are analyzed and a sampling and/or processing control scheme is generated using the analysis. The sampling control scheme provides an indication for where and when to take measurements on substrates processed by the device. The processing control scheme provides an indication for how to control the processing of the substrate. Also, there is provided a method of determining which of multiple devices contributed to a fingerprint of a processing parameter.Type: ApplicationFiled: May 20, 2019Publication date: August 19, 2021Applicant: ASML NETHERLANDS B.V.Inventors: Jeroen Van Dongen, Wim Tjibbo TEL, Sarathi ROY, Yichen ZHANG, Andrea CAVALLI, Bart Laurens SJENITZER, Simon Philip Spencer HASTINGS
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Patent number: 11079687Abstract: A method including obtaining (i) measurements of a parameter of the feature, (ii) data related to a process variable of a patterning process, (iii) a functional behavior of the parameter defined as a function of the process variable based on the measurements of the parameter and the data related to the process variable, (iv) measurements of a failure rate of the feature, and (v) a probability density function of the process variable for a setting of the process variable, converting the probability density function of the process variable to a probability density function of the parameter based on a conversion function, where the conversion function is determined based on the function of the process variable, and determining a parameter limit of the parameter based on the probability density function of the parameter and the measurements of the failure rate.Type: GrantFiled: December 17, 2018Date of Patent: August 3, 2021Assignee: ASML Netherlands B.V.Inventors: Abraham Slachter, Stefan Hunsche, Wim Tjibbo Tel, Anton Bernhard Van Oosten, Koenraad Van Ingen Schenau, Gijsbert Rispens, Brennan Peterson
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Patent number: 11067902Abstract: A method includes obtaining, for each particular feature of a plurality of features of a device pattern of a substrate being created using a patterning process, a modelled or simulated relation of a parameter of the patterning process between a measurement target for the substrate and the particular feature; and based on the relation and measured values of the parameter from the metrology target, generating a distribution of the parameter across at least part of the substrate for each of the features, the distribution for use in design, control or modification of the patterning process.Type: GrantFiled: July 11, 2018Date of Patent: July 20, 2021Assignee: ASML Netherlands B.V.Inventors: Patrick Warnaar, Patricius Aloysius Jacobus Tinnemans, Grzegorz Grzela, Everhardus Cornelis Mos, Wim Tjibbo Tel, Marinus Jochemsen, Bart Peter Bert Segers, Frank Staals
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Publication number: 20210216017Abstract: A process of selecting a measurement location, the process including: obtaining pattern data describing a pattern to be applied to substrates in a patterning process; obtaining a process characteristic measured during or following processing of a substrate, the process characteristic characterizing the processing of the substrate; determining a simulated result of the patterning process based on the pattern data and the process characteristic; and selecting a measurement location for the substrate based on the simulated result.Type: ApplicationFiled: March 26, 2021Publication date: July 15, 2021Applicant: ASML NETHERLANDS B.V.Inventors: Hans VAN DER LAAN, Wim Tjibbo Tel, Marinus Jochemsen, Stefan Hunsche
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Publication number: 20210208511Abstract: A lithographic apparatus and associated method of controlling a lithographic process. The lithographic apparatus has a controller configured to define a control grid associated with positioning of a substrate within the lithographic apparatus. The control grid is based on a device layout, associated with a patterning device, defining a device pattern which is to be, and/or has been, applied to the substrate in a lithographic process.Type: ApplicationFiled: November 22, 2017Publication date: July 8, 2021Applicant: ASML NETHERLANDS B.V.Inventors: Wim Tjibbo TEL, Hans Erik KATTOUW, Valerio ALTINI, Bearrach MOEST
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Publication number: 20210191278Abstract: A method, involving determining a first distribution of a first parameter associated with an error or residual in performing a device manufacturing process; determining a second distribution of a second parameter associated with an error or residual in performing the device manufacturing process; and determining a distribution of a parameter of interest associated with the device manufacturing process using a function operating on the first and second distributions. The function may include a correlation.Type: ApplicationFiled: March 10, 2021Publication date: June 24, 2021Applicant: ASML NETHERLANDS B.V.Inventors: Wim Tjibbo TEL, Bart Peter Bert SEGERS, Everhardus Cornelis MOS, Emil Peter SCHMITT-WEAVER, Yichen ZHANG, Petrus Gerardus VAN RHEE, Xing Lan LIU, Maria KILITZIRAKI, Reiner Maria JUNGBLUT, Hyunwoo YU
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Patent number: 11029614Abstract: A method of determining topographical variation across a substrate on which one or more patterns have been applied. The method includes obtaining measured topography data representing a topographical variation across a substrate on which one or more patterns have been applied by a lithographic process; and combining the measured topography data with knowledge relating to intra-die topology to obtain derived topography data having a resolution greater than the resolution of the measured topography data. Also disclosed is a corresponding level sensor apparatus and lithographic apparatus having such a level sensor apparatus, and a more general method of determining variation of a physical parameter from first measurement data of variation of the physical parameter across the substrate and intra-die measurement data of higher resolution than the first measurement data and combining these.Type: GrantFiled: June 22, 2017Date of Patent: June 8, 2021Assignee: ASML Netherlands B.V.Inventors: Wim Tjibbo Tel, Frank Staals, Martin Jules Marie-Emile De Nivelle, Tanbir Hasan
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Publication number: 20210149312Abstract: A method for determining a metric of a feature on a substrate obtained by a semiconductor manufacturing process involving a lithographic process, the method including: obtaining an image of at least part of the substrate, wherein the image includes at least the feature; determining a contour of the feature from the image; determining a plurality of segments of the contour; determining respective weights for each of the plurality of segments; determining, for each of the segments, an image-related metric; and determining the metric of the feature in dependence on the weights and the calculated image-related metric of each of the segments.Type: ApplicationFiled: August 22, 2018Publication date: May 20, 2021Inventors: Wim Tjibbo TEL, Mark John MASLOW, Koenraad VAN INGEN SCHENAU, Patrick WARNAAR, Abraham SLACHTER, Roy ANUNCIADO, Simon Hendrik Celine VAN GORP, Frank STAALS, Marinus JOCHEMSEN
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Patent number: 10990018Abstract: A method, involving determining a first distribution of a first parameter associated with an error or residual in performing a device manufacturing process; determining a second distribution of a second parameter associated with an error or residual in performing the device manufacturing process; and determining a distribution of a parameter of interest associated with the device manufacturing process using a function operating on the first and second distributions. The function may include a correlation.Type: GrantFiled: February 12, 2018Date of Patent: April 27, 2021Assignee: ASML Netherlands B.V.Inventors: Wim Tjibbo Tel, Bart Peter Bert Segers, Everhardus Cornelis Mos, Emil Peter Schmitt-Weaver, Yichen Zhang, Petrus Gerardus Van Rhee, Xing Lan Liu, Maria Kilitziraki, Reiner Maria Jungblut, Hyunwoo Yu
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Publication number: 20210096474Abstract: Methods and apparatus for determining a focus of a projection system are disclosed. In one arrangement, a method includes obtaining first data derived from a first measurement of one or more selected properties of a target pattern formed on a substrate by exposing the substrate using the projection system. The first measurement is performed before the substrate is etched based on the target pattern. The method further includes obtaining second data derived from a second measurement of the one or more selected properties of the target pattern. The second measurement is performed after the substrate is etched based on the target pattern. The method further includes determining the focus of the projection system using the first data and the second data.Type: ApplicationFiled: April 5, 2018Publication date: April 1, 2021Applicant: ASML NETHERLANDS B.V.Inventors: Wim Tjibbo TEL, Bart LAENENS
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Patent number: 10962886Abstract: Provided is a process of selecting a measurement location, the process including: obtaining pattern data describing a pattern to be applied to substrates in a patterning process; obtaining a process characteristic measured during or following processing of a substrate, the process characteristic characterizing the processing of the substrate; determining a simulated result of the patterning process based on the pattern data and the process characteristic; and selecting a measurement location for the substrate based on the simulated result.Type: GrantFiled: December 15, 2016Date of Patent: March 30, 2021Assignee: ASML NETHERLANDS B.V.Inventors: Hans Van Der Laan, Wim Tjibbo Tel, Marinus Jochemsen, Stefan Hunsche
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Publication number: 20210080837Abstract: A method for determining a correction to a patterning process. The method includes obtaining a plurality of qualities of the patterning process (e.g., a plurality of parameter maps, or one or more corrections) derived from metrology data and data of an apparatus used in the patterning process, selecting, by a hardware computer system, a representative quality from the plurality of qualities, and determining, by the hardware computer system, a correction to the patterning process based on the representative quality.Type: ApplicationFiled: November 20, 2018Publication date: March 18, 2021Applicant: ASML NETHERLANDS B.V.Inventors: Manouk RIJPSTRA, Cornelis Johannes Henricus LAMBREGTS, Wim Tjibbo TEL, Sarathi ROY, Cédric Désiré GROUWSTRA, Chi-Fei NIEN, Weitian KOU, Chang-Wei CHEN, Pieter Gerardus Jacobus SMORENBERG
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Publication number: 20210080838Abstract: A method for determining adjustment to a patterning process. The method includes obtaining a probability density function of a parameter related to a feature of a substrate subject to the patterning process based on measurements of the parameter, determining an asymmetry of the probability density function, and determining an adjustment to the patterning process based on the asymmetry of the probability density function of the parameter so as to reduce a probability of the feature having a parameter value that falls outside a range between threshold values of the parameter.Type: ApplicationFiled: January 14, 2019Publication date: March 18, 2021Applicant: ASML NETHERLANDS B.V.Inventors: Wim Tjibbo TEL, Marc Jurian KEA, Roy ANUNCIADO
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Publication number: 20210018850Abstract: A method including obtaining (i) measurements of a parameter of the feature, (ii) data related to a process variable of a patterning process, (iii) a functional behavior of the parameter defined as a function of the process variable based on the measurements of the parameter and the data related to the process variable, (iv) measurements of a failure rate of the feature, and (v) a probability density function of the process variable for a setting of the process variable, converting the probability density function of the process variable to a probability density function of the parameter based on a conversion function, where the conversion function is determined based on the function of the process variable, and determining a parameter limit of the parameter based on the probability density function of the parameter and the measurements of the failure rate.Type: ApplicationFiled: December 17, 2018Publication date: January 21, 2021Applicant: ASML NETHERLANDS B.V.Inventors: Abraham SLACHTER, Stefan HUNSCHE, Wim Tjibbo TEL, Anton Bernhard VAN OOSTEN, Koenraad VAN INGEN SCHENAU, Gijsbert RISPENS, Brennan PETERSON