Abstract: A method serves for adjusting a projection objective of a projection exposure machine for microlithography for the purpose of fabricating semiconductor components having a number of optical elements, which can be set via manipulators, for simultaneously minimizing a number of aberrations of the projection objective (7). The minimization of the aberrations is carried out by manipulating at least one portion of the optical elements with the aid of their respective manipulators. The adjustment is carried out by means of nonlinear min-max optimization of a number of parameters, suitable for describing the imaging properties of the projection objective (7), at various field points in an image plane (20, 21) of the projection objective, the individual parameters being optimized in such a way that the parameter value of the field point which has the maximum aberration is optimized.

Abstract: A device and a method for wavefront measurement of an optical imaging system, and a microlithography projection exposure machine that is equipped with such a device. The device has a wavefront generating unit that includes an optical element (1) with an object-side periodic structure (2), and a light source unit (20,21) for illuminating the object-side periodic structure with the aid of a measuring radiation. The device also has a detector unit that is arranged on the image side of the imaging system to be measured and that includes an optical element (3) with an image-side periodic structure, and a detector element (52, 52a, 52b) for detecting an overlay pattern of the imaged object-side periodic structure and image-side periodic structure.

Abstract: Device and method for wavefront measurement of an optical imaging system by means of phase-shifting interferometry, having a mask structure (6a) to be arranged on the object side, and/or a grating structure (7a) to be arranged on the image side. The object-side mask structure includes one or more one-dimensional mask structure patterns, and the image-side grating structure includes one or more two-dimensional grating structure patterns. Alternatively, conversely, the mask structure includes one or more two-dimensional patterns, and the grating structure includes one or more one-dimensional patterns.

Abstract: In a method for determining wavefront aberrations for the characterization of imaging characteristics in an optical imaging system, the measurement results from two different measurement methods, which are carried out at successive times, are combined. In this case, at least some of the aberration parameters which are determined in the previous first measurement method are used as a given precondition for determining aberration parameters with the aid of the second measurement method, and are assessed accordingly. This results in a hybrid method, in which the strength of at least two measurement methods are used in a combined form, and specific weaknesses of any one method can be avoided.