Abstract: A motor vehicle electrical system which includes an electric machine, an active bridge rectifier, and at least one control device, the at least one control device being configured for converting an alternating voltage which is output by the electric machine at a number of phase connections into a direct voltage by controlling active switching elements of the bridge rectifier. An arrangement is provided configured for initiating a short circuit of at least two of the phase connections as soon as a signal characterizing the direct voltage exceeds an upper threshold value, and for deactivating the short circuit as soon as the signal characterizing the direct voltage subsequently falls below a lower threshold value. An evaluation device is provided configured for detecting a value of the direct voltage, for filtering the detected value, and for providing the filtered value as the signal characterizing the direct voltage.

Abstract: A rectifier module for an active bridge rectifier having two switching elements, connected in series between two end terminals, and between which a center tap is formed, and a control circuit including a monitoring unit, a synchronization unit, and a control unit, the monitoring unit detecting a measuring voltage and outputting a request signal when the measuring voltage exceeds an upper threshold value. The synchronization unit outputs a synchronization signal to a synchronization terminal as long as the monitoring unit outputs the request signal, and otherwise to monitor the synchronization terminal for a synchronization signal. The control unit switches one of the two switching elements into a conductive state at least in sections during an activation period of time, when the monitoring unit outputs the request signal and/or when the synchronization signal is detected and is optionally recognized as valid by the monitoring.

Abstract: Electronic module (10), and an electric motor (12) containing one, and also a production method for one, having an electrically conductive first substrate (16) which has a basic body (54) and which has a second electrically conductive substrate (18) mounted on it, and having at least one power component which is arranged on a first substrate (16), and the second substrate (18) is fitted with further components (40) on a side (32) which is remote from the first substrate (16), where the second substrate (18) has a smaller base area (19) than the basic body (54) of the first substrate (16), and the power components (22) are mounted on the first substrate (16) outside the outer perimeter (70) of the second substrate (18)—next to the latter.

Abstract: A semiconductor component and a method for manufacturing such a semiconductor component which has a resistance behavior which depends heavily on the temperature. This resistance behavior is obtained by a special multi-layer structure of the semiconductor component, one layer being designed in such a way that, for example, multiple p-doped regions are present in an n-doped region, said regions being short-circuited on one side via a metal-plated layer. For example, the semiconductor component may be used for reducing current peaks, by being integrated into a conductor. In the cold state, the semiconductor component has a high resistance which becomes significantly lower when the semiconductor component is heated as a result of the flowing current.

Abstract: Electric motor (10), in particular for adjusting moving parts in a motor vehicle, comprising an electronic unit (70) with a sandwich construction, which contains a first electrically conductive substrate (71) and a second electric conductive substrate (72), between which power components are located and electrically connected to both substrates (71, 72), and a side (84) of the second substrate (72) facing away from the first substrate (71) is equipped with additional electronic components (56), wherein the first substrate (71) is embodied as a punched grid (44), which together with the second substrate (72) is extrusion coated with a plastic body (95) in such a way that the extensions (97) of the punched grid (44) protrude from the plastic body (95), forming an electrical and/or mechanical interface (98) for connecting additional motor components (99, 38, 40, 104, 102, 80).

Abstract: A semiconductor component and a method for manufacturing such a semiconductor component which has a resistance behavior which depends heavily on the temperature. This resistance behavior is obtained by a special multi-layer structure of the semiconductor component, one layer being designed in such a way that, for example, multiple p-doped regions are present in an n-doped region, said regions being short-circuited on one side via a metal-plated layer. For example, the semiconductor component may be used for reducing current peaks, by being integrated into a conductor. In the cold state, the semiconductor component has a high resistance which becomes significantly lower when the semiconductor component is heated as a result of the flowing current.

Abstract: Electronic module (10), and an electric motor (12) containing one, and also a production method for one, having an electrically conductive first substrate (16) which has a basic body (54) and which has a second electrically conductive substrate (18) mounted on it, and having at least one power component which is arranged on a first substrate (16), and the second substrate (18) is fitted with further components (40) on a side (32) which is remote from the first substrate (16), where the second substrate (18) has a smaller base area (19) than the basic body (54) of the first substrate (16), and the power components (22) are mounted on the first substrate (16) outside the outer perimeter (70) of the second substrate (18)—next to the latter.

Abstract: Electric motor (10), in particular for adjusting moving parts in a motor vehicle, comprising an electronic unit (70) with a sandwich construction, which contains a first electrically conductive substrate (71) and a second electric conductive substrate (72), between which power components are located and electrically connected to both substrates (71, 72), and a side (84) of the second substrate (72) facing away from the first substrate (71) is equipped with additional electronic components (56), wherein the first substrate (71) is embodied as a punched grid (44), which together with the second substrate (72) is extrusion coated with a plastic body (95) in such a way that the extensions (97) of the punched grid (44) protrude from the plastic body (95), forming an electrical and/or mechanical interface (98) for connecting additional motor components (99, 38, 40, 104, 102, 80).

Abstract: A semiconductor component that is able to be produced simply, quickly, and yet reliably and that usable for power applications, and including a semiconductor chip, a lower, first main electrode layer formed on a first side of the semiconductor chip, a lower control electrode layer formed on the first side, an insulation layer formed on the first side between the lower first main electrode layer and the lower control electrode layer and which partly covers the lower first main electrode layer, an upper first main electrode layer which is formed on the lower first main electrode layer, an upper control electrode layer which is formed on the lower control electrode layer and the insulation layer and extends on the insulation layer partially above the lower first main electrode layer, and a second main electrode layer formed on a second side of the semiconductor chip.

Abstract: A semiconductor power component having an anode contact on the reverse side, an emitter region of a first conductor type on the reverse side, which is connected to the anode contact on the reverse side, a drift zone which is connected to the emitter region that is on the reverse side and extends partially to the front surface, an MOS control structure on the front side, having a control contact positioned in insulated fashion, a cathode contact on a front side which is connected to a source region and a first body region. The drift zone has first and second drift region of a second conductor type and a third drift region of first conductor type. First drift region is a buried region, second drift region connects the front surface to first drift region, and third drift region connects the first and/or second body region to first drift region.

Abstract: A semiconductor component that is able to be produced simply, quickly, and yet reliably and that usable for power applications, and including a semiconductor chip, a lower, first main electrode layer formed on a first side of the semiconductor chip, a lower control electrode layer formed on the first side, an insulation layer formed on the first side between the lower first main electrode layer and the lower control electrode layer and which partly covers the lower first main electrode layer, an upper first main electrode layer which is formed on the lower first main electrode layer, an upper control electrode layer which is formed on the lower control electrode layer and the insulation layer and extends on the insulation layer partially above the lower first main electrode layer, and a second main electrode layer formed on a second side of the semiconductor chip.

Abstract: A semiconductor circuit configuration is described, in particular for ignition applications, having a semiconductor power switching device which has a first main terminal, a second main terminal and a control terminal; a clamping diode device which is switched between the first main terminal and the control terminal for clamping an external voltage (VA) which is applied at the first main terminal; the clamping diode device having a first part with a first clamp voltage and a second part with a second clamp voltage (VKL?), the second part being connected in series with the first part; a controllable semiconductor switching device which is connected in parallel with the first part for controllable bridging of the first part, so that either the sum (VKL) of the first and the second clamp voltages, or the second clamp voltage (VKL?) is provided for clamping the external voltage (VA) applied at the first main terminal; and a control circuit for controlling the controllable semiconductor switching device as a funct

Abstract: A method for packaging electronic assemblies and a multiple chip package, at least one power semiconductor chip being applied to a base plate using a first solder, at least one logic chip being applied to the base plate, the logic chip and the base plate being positioned electrically insulated from one another, at least one logic chip being connected to the at least one power semiconductor chip using signal transmission lines, and the electronic assembly including the at least one power semiconductor chip and the at least one logic chip being packaged using a molding compound in order to provide a multiple chip package.

Abstract: A semiconductor power component and a method for producing a semiconductor power component, in particular a vertical NPT-IGBT for ignition applications with a breakdown voltage of less than approx. 1000 V. The semiconductor power component includes a wafer substrate of a first conductive type including a rear-side emitter region of a second conductive type and a front-side drift region of the first conductive type; a rear-side anode contact which is connected to the emitter region and extends partially to the front-side surface; a front-side MOS control structure; and a front-side cathode contact which is connected to a front-side source region and a body region of the front-side MOS control structure. The thickness of the drift region is much larger than the width of the space charge region at a defined breakdown voltage; and the thickness of the rear-side emitter region is greater than 5 ?m.

Abstract: A device, an ammeter and a motor vehicle, having a first section and a second section of a conductor for the purpose of measuring the electrical amperage in the conductor are described; a first sensor means and a second sensor means being provided; the current flowing in the first section and in the second section generating a useful magnetic field; the first sensor means being provided to measure the useful magnetic field; the second sensor means being provided in a location where the useful magnetic field disappears; the second sensor means being provided to measure a magnetic interference field; and the measurement of the useful magnetic field being correctable by the measurement of the magnetic interference field.

Abstract: A method for packaging electronic assemblies and a multiple chip package, at least one power semiconductor chip being applied to a base plate using a first solder, at least one logic chip being applied to the base plate, the logic chip and the base plate being positioned electrically insulated from one another, at least one logic chip being connected to the at least one power semiconductor chip using signal transmission lines, and the electronic assembly including the at least one power semiconductor chip and the at least one logic chip being packaged using a molding compound in order to provide a multiple chip package.

Abstract: A semiconductor component for switching high currents. The semiconductor component includes an LIGBT arrangement having island-shaped p-wells and specially designed cathode regions for improving the latch-up strength of the semiconductor component.

Abstract: A bidirectional semiconductor component having two symmetrical MOS transistor structures integrated laterally in a substrate and connected antiserially, their drain terminals being connected to one another. A zone having the same type of conductivity as the drain region yet a higher doping than that of the drain region is situated upstream from a pn junction of one of the MOS transistors in a junction area with the drain region.

Abstract: The present invention creates a semiconductor power component having an anode contact (502) on the reverse side; an emitter region (505) of a first conductor type (p+), on the reverse side, which is connected to the anode contact (502) on the reverse side; a drift zone (504, 514, 540) which is connected to the emitter region (505) that is on the reverse side and extends partially to the front surface; an MOS control structure (503, 506, 560, 508, 580, 509) on the front side, having a control contact (503) that is positioned in insulated fashion; a cathode contact (501) on the front side which is connected to a source region (506) and a first body region (508). Drift zone (504, 514, 540) has a first drift region (540) of second conductor type (n−), a second drift region (504) of second conductor type (n) and a third drift region (514) of first conductor type (p). First drift region (540) is a buried region. Second drift region (504) connects the front surface to first drift region (540).

Abstract: A semiconductor circuit configuration is described, in particular for ignition applications, having a semiconductor power switching device (100) which has a first main terminal (102), a second main terminal (101) and a control terminal (103); a clamping diode device (205a, 205b) which is switched between the first main terminal (102) and the control terminal (103) for clamping an external voltage (VA) which is applied at the first main terminal (202); the clamping diode device (205a, 205b) having a first part (205a) with a first clamp voltage and a second part (205b) with a second clamp voltage (VKL′), the second part (205b) being connected in series with the first part (205a); a controllable semiconductor switching device (402, 650) which is connected in parallel with the first part (205a) for controllable bridging of the first part (205a), so that either the sum (VKL) of the first and the second clamp voltages, or the second clamp voltage (VKL′) is provided for clamping the external voltage (VA)