Abstract: For signal transmission between the high-pressure side (2) and the low-pressure side (3) of a semiconductor power component (1), with a reduced surface field (RESURF) region (4) disposed between the high-pressure side (2) and the low-pressure side (3), it is proposed that at least one polysilicon resistor (5) be provided, which is disposed above the RESURF region (4) and is electrically insulated from it, as a result of which a high off-state voltage resistance is assured.

Abstract: A semiconductor power component and a method for producing a semiconductor power component, in particular a vertical NPT-IGBT for ignition applications with a breakdown voltage of less than approx. 1000 V. The semiconductor power component includes a wafer substrate of a first conductive type including a rear-side emitter region of a second conductive type and a front-side drift region of the first conductive type; a rear-side anode contact which is connected to the emitter region and extends partially to the front-side surface; a front-side MOS control structure; and a front-side cathode contact which is connected to a front-side source region and a body region of the front-side MOS control structure. The thickness of the drift region is much larger than the width of the space charge region at a defined breakdown voltage; and the thickness of the rear-side emitter region is greater than 5 &mgr;m.

Abstract: An ignition system is for an internal combustion engine having an ignition device that requires a high voltage (ignition voltage) for igniting the ignition spark. Two ignition coils are provided, which have secondary windings that are each connected to electrodes of a spark plug, which have primary windings that may be connected in each case by a switching arrangement to a supply voltage source, and a drive circuit, via which the ignition coils are driven in a time-displaced manner.

Abstract: A semiconductor power component is described having a rear-side anode contact, a rear-side emitter region of a first conductivity type, which is connected to the rear-side anode contact, a drift region, which is connected to the rear-side emitter region and partially extends to the front-side surface, a front-side MOS control structure, and a front-side cathode contact, which is connected to the source region and the body region. The drift region includes a first drift region of the second conductivity type, a second drift region of the second conductivity type, and a third drift region of the first conductivity type. The first drift region is a buried region. The second drift region connects the front-side surface to the first drift region. The third drift region borders on a body region and connects the front side surface to the first drift region.

Abstract: The present invention relates to a circuit configuration for protecting against polarity reversal of a DMOS transistor. A charge carrier zone (30) is provided, situated in the drift zone (14) of DMOS transistor (10), made up of individual partial charge carrier zones (32) situated at a distance from one another and connected to one another in a conducting manner, the charge carrier zone (30) having an opposite charge carrier doping from that of the drift zone (14), and being able to be acted upon by a potential that is negative with respect to a potential present at a drain terminal (24) of the DMOS transistor (10), so that a short-circuit current is prevented.

Abstract: The present invention relates to an ignition system for an internal combustion engine having an ignition device that requires a high voltage (ignition voltage) for igniting the ignition spark.

Abstract: A device, an ammeter and a motor vehicle, having a first section (10) and a second section (20) of a conductor (1) for the purpose of measuring the electrical amperage in the conductor (1) are described; a first sensor means (15) and a second sensor means (16) being provided; the current flowing in the first section (10) and in the second section (20) generating a useful magnetic field; the first sensor means (15) being provided to measure the useful magnetic field; the second sensor means (16) being provided in a location where the useful magnetic field disappears; the second sensor means (16) being provided to measure a magnetic interference field; and the measurement of the useful magnetic field being correctable by the measurement of the magnetic interference field.

Abstract: A capacitor, particularly, an electrolyte capacitor, with low inductance includes a housing part, at least one capacitor reel including two capacitor electrodes insulated from each other by a dielectric and positioned in the housing part, and a housing bottom having at least one feed-through for contacting the capacitor electrodes and on which are arranged outer terminals for capacitor electrodes, the outer terminals being positioned so that one of the two outer terminals encircles the other terminal at least partially, and the two outer terminals are electrically insulated from each other.

Abstract: A capacitor, particularly, an electrolyte capacitor, with low inductance includes a housing part, at least one capacitor reel including two capacitor electrodes insulated from each other by a dielectric and positioned in the housing part, and a housing bottom having at least one feed-through for contacting the capacitor electrodes and on which are arranged outer terminals for capacitor electrodes, the outer terminals being positioned so that one of the two outer terminals encircles the other terminal at least partially, and the two outer terminals are electrically insulated from each other.

Abstract: A semiconductor power component is described having a rear-side anode contact, a rear-side emitter region of a first conductivity type, which is connected to the rear-side anode contact, a drift region, which is connected to the rear-side emitter region and partially extends to the front-side surface, a front-side MOS control structure, and a front-side cathode contact, which is connected to the source region and the body region. The drift region includes a first drift region of the second conductivity type, a second drift region of the second conductivity type, and a third drift region of the first conductivity type. The first drift region is a buried region. The second drift region connects the front-side surface to the first drift region. The third drift region borders on a body region and connects the front side surface to the first drift region.

Abstract: A transistor component and a method of producing the transistor component having at least one insulated-gate electrode and with lateral and vertical current flow. The transistor component is used for low-loss switching of high currents and is optionally designed in bipolar or MOS technology. The component includes a rear contact connected to a substrate across a highly doped region, where the highly doped region has a concentration profile of the dopant atoms that tapers out smoothly into the interior of the component. The highly doped region can be produced by a diffusion process.