Abstract: A method for fabricating a non-volatile memory device includes alternately stacking a plurality of interlayer dielectric layers and a plurality of conductive layers over a substrate, etching the interlayer dielectric layers and the conductive layers to form a trench which exposes a surface of the substrate forming a first material layer over a resulting structure in which the trench is formed, forming a second material layer over the first material layer, removing portions of the second material layer and the first material layer formed on a bottom of the trench to expose the surface of the substrate, removing the second material layer, and burying a channel layer within the trench in which the second material layer is removed.

Abstract: An accurate total error rate performance can be measured using a computed error vector magnitude (EVM) per stream. Using this EVM, the receiver or the transmitter can advantageously generate an optimized modulation and coding scheme (MCS) that corresponds to a specific number of streams, modulation and coding rate for the transmitter. For example, the receiver can compute an SNR from the EVM and then use an SNR vs. MCS table to determine the optimized MCS. In contrast, the transmitter can receive an EVM-to-RSSI mapping and an EVM-to-MCS mapping from the receiver. These mappings and an EVM can facilitate selecting the optimized MCS.

Abstract: Techniques are disclosed for detecting a packet. One technique includes sampling a received signal to produce a sequence of samples wherein the sequence of samples includes a plurality of subsequences of samples; cross correlating the subsequences of samples with a known form of the subsequence to produce cross correlations; self correlating the cross correlations to produce a plurality of self correlations; summing the self correlations; and processing the sum of the self correlations.

Abstract: A method for fabricating, a vertical channel type nonvolatile memory device includes: alternately forming a plurality of sacrificial layers and a plurality of interlayer dielectric layers over a semiconductor substrate; etching the sacrificial layers and the interlayer dielectric layers to form a plurality of first openings for channel each of which exposes the substrate; filling the first openings to form a plurality of channels protruding from the semiconductor substrate; etching the sacrificial layers and the interlayer dielectric layers to form second openings for removal of the sacrificial layers between the channels; exposing sidewalls of the channels by removing the sacrificial layers exposed by the second openings; and forming a tunnel insulation layer, a charge trap layer, a charge blocking layer, and a conductive layer for gate electrode on the exposed sidewalls of the channels.

Abstract: A method for manufacturing a non-volatile memory device having a charge trap layer comprises in one embodiment: forming a first dielectric layer over a semiconductor substrate; forming a second dielectric layer having a higher dielectric constant than that of the first dielectric layer over the first dielectric layer; forming a nitride buffer layer for preventing an interfacial reaction over the second dielectric layer; forming a third dielectric layer by supplying a radical oxidation source onto the nitride buffer layer to oxidize the nitride buffer layer, thereby forming a tunneling layer comprising the first, second, and third dielectric layers; and forming a charge trap layer, a shielding layer, and a control gate electrode layer over the tunneling layer.

Abstract: Current OFDM systems use a limited number of symbols and/or sub-channels to provide approximations for channel estimations and pilot tracking, i.e. phase estimations. For example, two training symbols in the preamble of a data packet are used to provide channel estimation. Four of the fifty-four sub-channels are reserved for providing phase estimation. However, noise and other imperfections can cause errors in both of these estimations, thereby degrading system performance. Advantageously, decision feedback mechanisms can be provided to significantly improve channel estimation and pilot tracking in OFDM systems. The decision feedback mechanisms can use data symbols in the data packet to improve channel estimation as well as data sub-channels to improve pilot tracking.

Abstract: Current OFDM systems use a limited number of symbols and/or sub-channels to provide approximations for channel estimations and pilot tracking, i.e. phase estimations. For example, two training symbols in the preamble of a data packet are used to provide channel estimation. Four of the fifty-four sub-channels are reserved for providing phase estimation. However, noise and other imperfections can cause errors in both of these estimations, thereby degrading system performance. Advantageously, decision feedback mechanisms can be provided to significantly improve channel estimation and pilot tracking in OFDM systems. The decision feedback mechanisms can use data symbols in the data packet to improve channel estimation as well as data sub-channels to improve pilot tracking.

Abstract: The present invention provides an apparatus and method of multiple antenna receiver combining of high data rate wideband packetized wireless communication signals, where the apparatus includes M receive antennas, receiving M high data rate wideband packetized wireless communication signals, where each of the signals includes N frequency bins. The apparatus, in an exemplary embodiment, includes (1) a joint timing recovery units that perform joint coarse signal timing estimation, joint frequency offset estimation, and joint fine timing estimation on each of the signals, (2) M Fast Fourier Transform units (FFTs) that each convert the digital data for each of the M signals into frequency domain information for each of the N received frequencies and that output Q pilots for each of the signals, where Q is a positive integer, and (3) a combiner that weights and combines the outputs of the M FFTs for each of the N received frequencies.

Abstract: A multiple-input multiple-output (MIMO) system can transmit on multiple antennas simultaneously and receive on multiple antennas simultaneously. Unfortunately, because a legacy 802.11a/g device is not able to decode multiple data streams, such a legacy device may “stomp” on a MIMO packet by transmitting before the transmission of the MIMO packet is complete. Therefore, MIMO systems and methods are provided herein to allow legacy devices to decode the length of a MIMO packet and to restrain from transmitting during that period. These MIMO systems and methods are optimized for efficient transmission of MIMO packets.

Abstract: A method of fabricating a semiconductor device includes forming a gate dielectric on a substrate, forming a gate structure on the gate dielectric, the gate structure comprising a stacked layer of a silicon layer and a metal layer, selectively etching the gate structure to form a gate pattern, forming a capping layer surrounding the gate pattern, plasma-treating the capping layer, and performing a gate reoxidation process

Abstract: A system and method are disclosed for wireless channel estimation. Estimating the characteristics of a wireless channel includes receiving a plurality of training symbols sent for the purpose of facilitating channel estimation; calculating a phase difference between at least two of the training symbols; using the calculated phase difference to coherently combine the training symbols to produce a composite training symbol; and using the composite training symbol to estimate the channel.

Abstract: A multiple-input multiple-output (MIMO) system can transmit on multiple antennas simultaneously and receive on multiple antennas simultaneously. Unfortunately, because a legacy 802.11a/g device is not able to decode multiple data streams, such a legacy device may “stomp” on a MIMO packet by transmitting before the transmission of the MIMO packet is complete. Therefore, MIMO systems and methods are provided herein to allow legacy devices to decode the length of a MIMO packet and to restrain from transmitting during that period. These MIMO systems and methods are optimized for efficient transmission of MIMO packets.

Abstract: A nonvolatile memory device with a blocking layer controlling the transfer of electric charges in a charge storage layer includes the blocking layer having a first blocking layer in contact with the charge storage layer and a second blocking layer over the first blocking layer, wherein the first blocking layer has a greater energy band gap than the second blocking layer and the second blocking layer has a greater permittivity than the first blocking layer.

Abstract: A method of fabricating a non-volatile memory device includes: forming a tunnel insulation layer pattern and a floating gate electrode layer pattern over a semiconductor substrate; forming an isolation trench by etching an exposed portion of the semiconductor substrate so that the isolation trench is aligned with the tunnel insulation layer pattern and the floating gate electrode layer pattern; forming an isolation layer by filling the isolation trench with a filling insulation layer; forming a hafnium-rich hafnium silicon oxide layer over the isolation layer and the floating gate electrode layer pattern; forming a hafnium-rich hafnium silicon oxynitride layer by carrying out a first nitridation on the hafnium-rich hafnium silicon oxide layer; forming a silicon-rich hafnium silicon oxide layer over the hafnium-rich hafnium silicon oxynitride layer; forming a silicon-rich hafnium silicon oxynitride layer by carrying out a second nitridation on the silicon-rich hafnium silicon oxide layer; and forming a control

Abstract: A method for manufacturing a non-volatile memory device having a charge trap layer comprises in one embodiment: forming a first dielectric layer over a semiconductor substrate; forming a second dielectric layer having a higher dielectric constant than that of the first dielectric layer over the first dielectric layer; forming a nitride buffer layer for preventing an interfacial reaction over the second dielectric layer; forming a third dielectric layer by supplying a radical oxidation source onto the nitride buffer layer to oxidize the nitride buffer layer, thereby forming a tunneling layer comprising the first, second, and third dielectric layers; and forming a charge trap layer, a shielding layer, and a control gate electrode layer over the tunneling layer.

Abstract: A method for reducing power consumption in a multi-user digital communication system and mobile station employing the method adjusts receive and transmit mode durations of the mobile device using downlink and uplink allocations from a base station of the system, as well as other factors.

Abstract: A method for fabricating a semiconductor device includes forming an insulation layer over a substrate including a pattern for forming a multi-plane channel, forming a columnar polysilicon layer over the insulation layer and filling in the pattern, and performing a thermal treatment process.

Abstract: A system and method are disclosed for transmitting data over a wireless channel. In some embodiments, transmitting data includes receiving convolutionally encoded data and enhancing the transmission of the data by further repetition encoding the data.

Abstract: An OFDM-based device and method for performing synchronization utilizes a time-domain preamble of an incoming OFDM-based signal to compute an estimated fine frequency offset. The computation of the estimated fine frequency offset involves multiplying values of the time-domain preamble with conjugates of corresponding values of a selected base station time-domain preamble, averaging the resulting multiplied values in predefined segments and self-correlating the resulting averaged values to derive a self-correlation value, which is used to compute the estimated fine frequency offset.

Abstract: A soft-bit de-mapping device and method of generating soft bits for decoding quantizes a log-likelihood ratio (LLR) value for a received value using functions bits and channel parameter bits to generate the soft bits. The function bits are generated by quantizing an LLR function for the received value, which includes modifying an original curve of the LLR function to a modified curve such that a segment of the original curve with the lowest slope is protected in the modified curve for a fixed equal quantization step-size. The channel parameter bits are generated by quantizing a channel parameter for the received value to generate channel.