Abstract: A Turbo decoder and method for decoding a double-binary circular recursive systematic convolutional (DBCRSC) encoded signal with unknown initial and final states executes iterations of forward and backward recursion on a payload block of the DBCRSC encoded signal and a padded block using an estimated forward state metric (FSM) and an estimated backward state metric (BSM), which are updated at one or more iterations.

Abstract: A soft-bit de-mapping device and method of generating soft bits for decoding quantizes a log-likelihood ratio (LLR) value for a received value using functions bits and channel parameter bits to generate the soft bits. The function bits are generated by quantizing an LLR function for the received value, which includes modifying an original curve of the LLR function to a modified curve such that a segment of the original curve with the lowest slope is protected in the modified curve for a fixed equal quantization step-size. The channel parameter bits are generated by quantizing a channel parameter for the received value to generate channel.

Abstract: Disclosed herein is an electrode terminal connecting member to connect two or more battery cells in series and/or in parallel to each other so as to manufacture a battery cell core pack, wherein the electrode terminal connecting member includes a plate body having a size sufficient to connect electrode terminals of the battery cells arranged in at least 2×2 matrix to each other, and the electrode terminals of the battery cells are directly coupled to the plate body in a state in which the plate body is not bent.

Abstract: A nonvolatile memory device with a blocking layer controlling the transfer of electric charges in a charge storage layer includes the blocking layer having a first blocking layer in contact with the charge storage layer and a second blocking layer over the first blocking layer, wherein the first blocking layer has a greater energy band gap than the second blocking layer and the second blocking layer has a greater permittivity than the first blocking layer.

Abstract: A nonvolatile memory device with a blocking layer controlling the transfer of electric charges in a charge storage layer includes the blocking layer having a first blocking layer in contact with the charge storage layer and a second blocking layer over the first blocking layer, wherein the first blocking layer has a greater energy band gap than the second blocking layer and the second blocking layer has a greater permittivity than the first blocking layer.

Abstract: A method for reducing power consumption in a multi-user digital communication system and mobile station employing the method adjusts receive and transmit mode durations of the mobile device using downlink and uplink allocations from a base station of the system, as well as other factors.

Abstract: Current OFDM systems use a limited number of symbols and/or sub-channels to provide approximations for channel estimations and pilot tracking, i.e. phase estimations. For example, two training symbols in the preamble of a data packet are used to provide channel estimation. Four of the fifty-four sub-channels are reserved for providing phase estimation. However, noise and other imperfections can cause errors in both of these estimations, thereby degrading system performance. Advantageously, decision feedback mechanisms can be provided to significantly improve channel estimation and pilot tracking in OFDM systems. The decision feedback mechanisms can use data symbols in the data packet to improve channel estimation as well as data sub-channels to improve pilot tracking.

Abstract: A nonvolatile memory device with a blocking layer controlling the transfer of electric charges in a charge storage layer includes the blocking layer having a first blocking layer in contact with the charge storage layer and a second blocking layer over the first blocking layer, wherein the first blocking layer has a greater energy band gap than the second blocking layer and the second blocking layer has a greater permittivity than the first blocking layer.

Abstract: A nonvolatile memory device with a blocking layer controlling the transfer of electric charges in a charge storage layer includes the blocking layer having a first blocking layer in contact with the charge storage layer and a second blocking layer over the first blocking layer, wherein the first blocking layer has a greater energy band gap than the second blocking layer and the second blocking layer has a greater permittivity than the first blocking layer.

Abstract: Disclosed herein is a middle- or large-sized battery module having a structure in which two or more plate-shaped secondary battery cells (‘battery cells’) are arranged in a lateral direction thereof, wherein the battery cells have electrode terminals arranged in the same direction, plate-shaped electrode terminal connecting members to electrically connect the battery cells to one another are electrically connected to oriented surfaces of the electrode terminals of the battery cells, each of the electrode terminal connecting members is provided at a top and/or bottom thereof with a coupling structure to interconnect electrode terminal connecting members, and at least one end of an insulating joint member coupled in the coupling structure is supported by a module case.

Abstract: An Orthogonal Frequency Division Multiple Access (OFDMA) device and method of correcting frequency offset in OFDMA signals computes an estimated frequency offset, which is used for producing a frequency offset-compensated mixer signal using a reference clock signal. The frequency offset-compensated mixer signal is used to produce a digital down-converted signal from an incoming OFDMA signal. The digital down-converted signal is digitally corrected for sampling errors using the estimated frequency offset.

Abstract: A 3D nonvolatile memory device includes: a plurality of channel structures including a plurality of channel layers and interlayer dielectric layers, which are alternately stacked, and extended in a first direction; a plurality of word lines extended in a second direction at least substantially perpendicular to the first direction; a plurality of row select lines connected to the plurality of channel layers, respectively, and extended in the second direction; and a plurality of column select lines connected to the plurality of channel structures, respectively, and extended in the first direction.

Abstract: A method of fabricating a non-volatile memory device includes: forming a tunnel insulation layer pattern and a floating gate electrode layer pattern over a semiconductor substrate; forming an isolation trench by etching an exposed portion of the semiconductor substrate so that the isolation trench is aligned with the tunnel insulation layer pattern and the floating gate electrode layer pattern; forming an isolation layer by filling the isolation trench with a filling insulation layer; forming a hafnium-rich hafnium silicon oxide layer over the isolation layer and the floating gate electrode layer pattern; forming a hafnium-rich hafnium silicon oxynitride layer by carrying out a first nitridation on the hafnium-rich hafnium silicon oxide layer; forming a silicon-rich hafnium silicon oxide layer over the hafnium-rich hafnium silicon oxynitride layer; forming a silicon-rich hafnium silicon oxynitride layer by carrying out a second nitridation on the silicon-rich hafnium silicon oxide layer; and forming a control

Abstract: Techniques are disclosed for detecting a packet. One technique includes sampling a received signal to produce a sequence of samples wherein the sequence of samples includes a plurality of subsequences of samples; cross correlating the subsequences of samples with a known form of the subsequence to produce cross correlations; self correlating the cross correlations to produce a plurality of self correlations; summing the self correlations; and processing the sum of the self correlations.

Abstract: A decoder and method for decoding a tail-biting convolutional encoded signal using Viterbi decoding scheme performs a traceback operation for a first portion of a total code block, which includes a code block of the tail-biting convolutional encoded signal and a padded block. During the traceback operation for the first portion, a particular state at a predefined position within the first portion is stored as a circular state. The circular state is used as a traceback starting state for at least one subsequent portion of the total code block to produce a decoded signal of the code block.

Abstract: Spurs cause significant problems with signal detecting, amplifier gain adjustment, and signal decoding. Various techniques can be used to mitigate the effects of spurs on a received signal. Generally, these techniques work by either canceling or ignoring the spurs. For example, a pilot mask can be used to ignore pilot information in one or more sub-channels. A Viterbi mask can determine the weighting given to bits in a sub-channel based on spur and data rate information. Channel interpolation can compute a pseudo channel estimate for a sub-channel known to have a spur location can be computed by interpolating the channel estimates of adjacent good sub-channels. Filtering of the received signal using a low-pass filter, a growing box filter, or a low-pass filter with self-correlation can be used to cancel a spur.

Abstract: A method of fabricating a non-volatile memory device includes: forming a tunnel insulation layer pattern and a floating gate electrode layer pattern over a semiconductor substrate; forming an isolation trench by etching an exposed portion of the semiconductor substrate so that the isolation trench is aligned with the tunnel insulation layer pattern and the floating gate electrode layer pattern; forming an isolation layer by filling the isolation trench with a filling insulation layer; forming a hafnium-rich hafnium silicon oxide layer over the isolation layer and the floating gate electrode layer pattern; forming a hafnium-rich hafnium silicon oxynitride layer by carrying out a first nitridation on the hafnium-rich hafnium silicon oxide layer; forming a silicon-rich hafnium silicon oxide layer over the hafnium-rich hafnium silicon oxynitride layer; forming a silicon-rich hafnium silicon oxynitride layer by carrying out a second nitridation on the silicon-rich hafnium silicon oxide layer; and forming a control

Abstract: A device and method of performing channel estimation for an OFDM-based wireless communication system performs a Least Square interpolation with a statistical channel profile consideration on pilot channel estimates to derive data channel estimates at data subcarrier locations.

Abstract: A device and method for performing channel estimation for an OFDM-based wireless communication system modifies pilot subcarrier spacing to use a set of interpolation coefficients associated with a different pilot subcarrier spacing.

Abstract: A method for fabricating a semiconductor device includes forming an insulation layer over a substrate including a pattern for forming a multi-plane channel, forming a columnar polysilicon layer over the insulation layer and filling in the pattern, and performing a thermal treatment process.