Patents by Inventor Won-Sang Lee
Won-Sang Lee has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20240094121Abstract: A method of detecting a biomolecule, a computing device performing the method, and a biomolecule detection system therefor are provided. The method includes receiving a terahertz signal that passed deionized water or reference material, receiving a terahertz signal that passed a target including a predetermined biomolecule, extracting a digital modulation characteristic for the received terahertz signal that passed the deionized water and the received terahertz signal that passed the target, and detecting the predetermined biomolecule included in the target by analyzing the extracted digital modulation characteristic, wherein the received terahertz signal that passed the deionized water and the received terahertz signal that passed the target are generated using a digitally modulated optical signal based on a transmission speed determined based on kinematics of the predetermined biomolecule.Type: ApplicationFiled: April 26, 2023Publication date: March 21, 2024Applicant: ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTEInventors: Won Kyoung LEE, Eon-sang KIM, Sang Rok MOON, Joon Ki LEE, Seung-Hyun CHO
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Publication number: 20240098275Abstract: A method for decoding an image based on an intra prediction, comprising: obtaining a first prediction pixel of a first region in a current block by using a neighboring pixel adjacent to the current block; obtaining a second prediction pixel of a second region in the current block by using the first prediction pixel of the first region; and decoding the current block based on the first and the second prediction pixels.Type: ApplicationFiled: November 15, 2023Publication date: March 21, 2024Inventors: Je Chang JEONG, Ki Baek KIM, Won Jin LEE, Hye Jin SHIN, Jong Sang YOO, Jang Hyeok YUN, Kyung Jun LEE, Jae Hun KIM, Sang Gu LEE
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Patent number: 11911153Abstract: The present invention provides a device for measuring biological information including a sensor array, wherein the sensor array includes a plurality of sensors that are either sensors for amplifying photoreactivity or sensors forming an island network connected by a plurality of multi-channels and, in the device, the average value of biological information about the skin tissues is measured based on values output from the sensor array, and a method of measuring biological information using the device.Type: GrantFiled: November 4, 2020Date of Patent: February 27, 2024Assignees: UNIVERSITY-INDUSTRY COOPERATION GROUP OF KYUNG HEE UNIVERSITY, Korea Electronics Technology InstituteInventors: Sun Kook Kim, Sung Ho Lee, Min Goo Lee, Hyuk Sang Jung, Min Jung Kim, Young Ki Hong, Won Geun Song
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Patent number: 11901418Abstract: Wafers including a diamond layer and a semiconductor layer having III-Nitride compounds and methods for fabricating the wafers are provided. A nucleation layer, at least one semiconductor layer having III-Nitride compound and a protection layer are formed on a silicon substrate. Then, a silicon carrier wafer is glass bonded to the protection layer. Subsequently the silicon substrate, nucleation layer and a portion of the semiconductor layer are removed. Then, an intermediate layer, a seed layer and a diamond layer are sequentially deposited on the III-Nitride layer. Next, a support wafer that includes a GaN layer (or a silicon layer covered by a protection layer) is deposited on the diamond layer. Then, the silicon carrier wafer and the protection layer are removed.Type: GrantFiled: February 23, 2022Date of Patent: February 13, 2024Assignee: RFHIC CorporationInventor: Won Sang Lee
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Patent number: 11901417Abstract: Wafers including a diamond layer and a semiconductor layer having III-Nitride compounds and methods for fabricating the wafers are provided. A nucleation layer, at least one semiconductor layer having III-Nitride compound and a protection layer are formed on a silicon substrate. Then, a silicon carrier wafer is glass bonded to the protection layer. Subsequently the silicon substrate, nucleation layer and a portion of the semiconductor layer are removed. Then, an intermediate layer, a seed layer and a diamond layer are sequentially deposited on the III-Nitride layer. Next, a substrate wafer that includes a glass substrate (or a silicon substrate covered by a protection layer) is glass bonded to the diamond layer. Then, the silicon carrier wafer and the protection layer are removed.Type: GrantFiled: February 23, 2022Date of Patent: February 13, 2024Assignee: RFHIC CorporationInventor: Won Sang Lee
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Publication number: 20240003638Abstract: A heat exchanger is disclosed. A first heat-exchanging plate, in which plural kinds of cooling water are circulated, and a second heat-exchanging plate, in which refrigerant is circulated, have respective independent flow channels to prevent mixing between the cooling water and the refrigerant. The first and second heat-exchanging plates have respective guides, which are layered so as to form an overlapping structure, thereby improving coupling capability and durability when the first and second heat-exchanging plates are welded to each other in the state of being layered.Type: ApplicationFiled: June 26, 2023Publication date: January 4, 2024Inventors: Hyeong Gi Lee, Sang Min Lee, Won Sang Lee, Do Gyu Kim
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Publication number: 20230231019Abstract: Wafers including a diamond layer and a semiconductor layer having III-Nitride compounds and methods for fabricating the wafers are provided. A nucleation layer, at least one semiconductor layer having III-Nitride compound and a protection layer are formed on a silicon substrate. Then, a silicon carrier wafer is glass bonded to the protection layer. Subsequently the silicon substrate, nucleation layer and a portion of the semiconductor layer are removed. Then, an intermediate layer, a seed layer and a first diamond layer are sequentially deposited on the III-Nitride layer. Next, the silicon carrier wafer and the protection layer are removed. Then, a silicon substrate wafer that includes a protection layer, silicon substrate and a diamond layer is prepared and glass bonded to the first diamond layer.Type: ApplicationFiled: February 28, 2023Publication date: July 20, 2023Inventor: Won Sang Lee
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Patent number: 11652146Abstract: Wafers including a diamond layer and a semiconductor layer having III-Nitride compounds and methods for fabricating the wafers are provided. A nucleation layer, at least one semiconductor layer having III-Nitride compound and a protection layer are formed on a silicon substrate. Then, a silicon carrier wafer is glass bonded to the protection layer. Subsequently the silicon substrate, nucleation layer and a portion of the semiconductor layer are removed. Then, an intermediate layer, a seed layer and a first diamond layer are sequentially deposited on the III-Nitride layer. Next, the silicon carrier wafer and the protection layer are removed. Then, a silicon substrate wafer that includes a protection layer, silicon substrate and a diamond layer is prepared and glass bonded to the first diamond layer.Type: GrantFiled: June 10, 2020Date of Patent: May 16, 2023Assignee: RFHIC CorporationInventor: Won Sang Lee
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Patent number: 11521957Abstract: In one embodiment, a semiconductor device includes a first substrate with a transistor formed in a first active are, a first bonding pad electrically connected to the transistor and a first metal pad surrounding the first active area. A second substrate of a type that is different from the first substrate includes a passive circuit element in a second active area on a front surface, a second bonding pad electrically connected to the passive circuit element, a second metal pad surrounding the second active area, and a mounting pad on a back surface of the second substrate with a through-via electrically connecting the second bonding pad to the mounting pad. A first interconnection extends from the first bonding pad to the second bonding pad, and a second interconnection extends from the first metal pad to the second metal pad and surrounds the region through which the first interconnection extends.Type: GrantFiled: July 8, 2021Date of Patent: December 6, 2022Assignee: RFHIC CORPORATIONInventor: Won Sang Lee
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Patent number: 11502175Abstract: Wafers including a diamond layer and a semiconductor layer having III-Nitride compounds and methods for fabricating the wafers are provided. A nucleation layer, at least one semiconductor layer having III-Nitride compound and a protection layer are formed on a silicon substrate. Then, a silicon carrier wafer is glass bonded to the protection layer. Subsequently the silicon substrate, nucleation layer and a portion of the semiconductor layer are removed. Then, an intermediate layer, a seed layer and a diamond layer are sequentially deposited on the III-Nitride layer. Next, a substrate wafer that includes a glass substrate (or a silicon substrate covered by a protection layer) is glass bonded to the diamond layer. Then, the silicon carrier wafer and the protection layer are removed.Type: GrantFiled: June 18, 2020Date of Patent: November 15, 2022Assignee: RFHIC CorporationInventor: Won Sang Lee
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Patent number: 11476335Abstract: Wafers including a diamond layer and a semiconductor layer having III-Nitride compounds and methods for fabricating the wafers are provided. A nucleation layer, at least one semiconductor layer having III-Nitride compound and a protection layer are formed on a silicon substrate. Then, a silicon carrier wafer is glass bonded to the protection layer. Subsequently the silicon substrate, nucleation layer and a portion of the semiconductor layer are removed. Then, an intermediate layer, a seed layer and a diamond layer are sequentially deposited on the III-Nitride layer. Next, a support wafer that includes a GaN layer (or a silicon layer covered by a protection layer) is deposited on the diamond layer. Then, the silicon carrier wafer and the protection layer are removed.Type: GrantFiled: June 29, 2020Date of Patent: October 18, 2022Assignee: RFHIC CorporationInventor: Won Sang Lee
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Patent number: 11424328Abstract: A method for fabricating a semiconductor wafer is provided, where the semiconductor wafer includes a diamond layer and a semiconductor layer having III-Nitride compounds. The method includes the steps of: disposing a nucleation layer on a SiC substrate and disposing at least one semiconductor layer on the nucleation layer, the at least one semiconductor layer including a III-Nitride compound. The method further includes the steps of: disposing a protection layer on the at least one semiconductor layer; bonding a carrier wafer to the protection layer, the carrier wafer including a SiC substrate; removing the substrate, the nucleation layer and a portion of the at least one semiconductor layer; disposing a diamond layer on the at least one semiconductor layer; depositing a substrate wafer on the diamond layer; and removing the carrier wafer and the protection layer.Type: GrantFiled: June 29, 2020Date of Patent: August 23, 2022Assignee: RFHIC CorporationInventor: Won Sang Lee
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Publication number: 20220238657Abstract: Wafers including a diamond layer and a semiconductor layer having III-Nitride compounds and methods for fabricating the wafers are provided. A nucleation layer, at least one semiconductor layer having III-Nitride compound and a protection layer are formed on a silicon substrate. Then, a silicon carrier wafer is glass bonded to the protection layer. Subsequently the silicon substrate, nucleation layer and a portion of the semiconductor layer are removed. Then, an intermediate layer, a seed layer and a diamond layer are sequentially deposited on the III-Nitride layer. Next, a substrate wafer that includes a glass substrate (or a silicon substrate covered by a protection layer) is glass bonded to the diamond layer. Then, the silicon carrier wafer and the protection layer are removed.Type: ApplicationFiled: February 23, 2022Publication date: July 28, 2022Inventor: Won Sang Lee
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Publication number: 20220181450Abstract: Wafers including a diamond layer and a semiconductor layer having III-Nitride compounds and methods for fabricating the wafers are provided. A nucleation layer, at least one semiconductor layer having III-Nitride compound and a protection layer are formed on a silicon substrate. Then, a silicon carrier wafer is glass bonded to the protection layer. Subsequently the silicon substrate, nucleation layer and a portion of the semiconductor layer are removed. Then, an intermediate layer, a seed layer and a diamond layer are sequentially deposited on the III-Nitride layer. Next, a support wafer that includes a GaN layer (or a silicon layer covered by a protection layer) is deposited on the diamond layer. Then, the silicon carrier wafer and the protection layer are removed.Type: ApplicationFiled: February 23, 2022Publication date: June 9, 2022Inventor: Won Sang Lee
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Patent number: 11146243Abstract: A bulk acoustic wave (BAW) filter for passing through electric signals in a preset frequency range is provided. The BAW filter includes: a diamond substrate; a passivation layer formed on the diamond substrate; a first metal layer formed on the passivation layer; a piezoelectric layer formed on the first metal layer; a second metal layer formed on a piezoelectric layer and a metal pad formed on the first metal layer. The metal pad, first metal layer, piezoelectric layer and second metal layer form an electrical path that allows an electrical signal within a preset frequency range to pass therethrough.Type: GrantFiled: February 2, 2020Date of Patent: October 12, 2021Assignee: RFHIC CorporationInventor: Won Sang Lee
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Publication number: 20210249511Abstract: Wafers including a diamond layer and a semiconductor layer having III-Nitride compounds and methods for fabricating the wafers are provided. A nucleation layer, at least one semiconductor layer having III-Nitride compound and a protection layer are formed on a silicon substrate. Then, a silicon carrier wafer is glass bonded to the protection layer. Subsequently the silicon substrate, nucleation layer and a portion of the semiconductor layer are removed. Then, an intermediate layer, a seed layer and a diamond layer are sequentially deposited on the III-Nitride layer. Next, a support wafer that includes a GaN layer (or a silicon layer covered by a protection layer) is deposited on the diamond layer. Then, the silicon carrier wafer and the protection layer are removed.Type: ApplicationFiled: June 29, 2020Publication date: August 12, 2021Inventor: Won Sang Lee
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Publication number: 20210249258Abstract: A method for fabricating a semiconductor wafer is provided, where the semiconductor wafer includes a diamond layer and a semiconductor layer having III-Nitride compounds. The method includes the steps of: disposing a nucleation layer on a SiC substrate and disposing at least one semiconductor layer on the nucleation layer, the at least one semiconductor layer including a III-Nitride compound. The method further includes the steps of: disposing a protection layer on the at least one semiconductor layer; bonding a carrier wafer to the protection layer, the carrier wafer including a SiC substrate; removing the substrate, the nucleation layer and a portion of the at least one semiconductor layer; disposing a diamond layer on the at least one semiconductor layer; depositing a substrate wafer on the diamond layer; and removing the carrier wafer and the protection layer.Type: ApplicationFiled: June 29, 2020Publication date: August 12, 2021Inventor: Won Sang Lee
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Publication number: 20210249512Abstract: Wafers including a diamond layer and a semiconductor layer having III-Nitride compounds and methods for fabricating the wafers are provided. A nucleation layer, at least one semiconductor layer having III-Nitride compound and a protection layer are formed on a silicon substrate. Then, a silicon carrier wafer is glass bonded to the protection layer. Subsequently the silicon substrate, nucleation layer and a portion of the semiconductor layer are removed. Then, an intermediate layer, a seed layer and a diamond layer are sequentially deposited on the III-Nitride layer. Next, a substrate wafer that includes a glass substrate (or a silicon substrate covered by a protection layer) is glass bonded to the diamond layer. Then, the silicon carrier wafer and the protection layer are removed.Type: ApplicationFiled: June 18, 2020Publication date: August 12, 2021Inventor: Won Sang Lee
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Publication number: 20210249379Abstract: Wafers including a diamond layer and a semiconductor layer having III-Nitride compounds and methods for fabricating the wafers are provided. A nucleation layer, at least one semiconductor layer having III-Nitride compound and a protection layer are formed on a silicon substrate. Then, a silicon carrier wafer is glass bonded to the protection layer. Subsequently the silicon substrate, nucleation layer and a portion of the semiconductor layer are removed. Then, an intermediate layer, a seed layer and a first diamond layer are sequentially deposited on the III-Nitride layer. Next, the silicon carrier wafer and the protection layer are removed. Then, a silicon substrate wafer that includes a protection layer, silicon substrate and a diamond layer is prepared and glass bonded to the first diamond layer.Type: ApplicationFiled: June 10, 2020Publication date: August 12, 2021Inventor: Won Sang Lee
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Patent number: 10906998Abstract: The polypropylene copolymer according to the present invention has a low melting point and also is excellent in the low temperature heat sealing effect, transparency and strength, and the film prepared therefrom can be effectively used as a sealing layer of the non-stretched polypropylene-based film.Type: GrantFiled: January 7, 2019Date of Patent: February 2, 2021Assignee: LG Chem, Ltd.Inventors: Kyung Seop Noh, Ji Ho Choi, Churl Young Park, Ki Soo Lee, Sang Jin Jeon, Hee Kwang Park, Won-Sang Lee, Ah Young Seo