Abstract: Methods for processing a semiconductor transistor are provided, where the semiconductor transistor includes a substrate, an epitaxial layer, and transistor components that are formed on the epitaxial layer. The method includes: removing a portion of the substrate that is disposed below a portion of the transistor components, to thereby expose a portion of a bottom surface of the epitaxial layer; forming an electrically insulating layer on the exposed portion of the bottom surface of the epitaxial layer; forming a via that extends from a bottom surface of the insulating layer to a bottom surface of one of the transistor components; depositing at least one metal layer on the bottom surface of the insulating layer, on a side wall of the via and on the bottom surface of one of the transistor components; and applying a solder paste to a bottom surface of the at least one metal layer.

Abstract: Methods for processing a semiconductor transistor are provided, where the semiconductor transistor includes a substrate, an epitaxial layer, and transistor components that are formed on the epitaxial layer. The method includes: removing a portion of the substrate that is disposed below a portion of the transistor components, to thereby expose a portion of a bottom surface of the epitaxial layer; forming an electrically insulating layer on the exposed portion of the bottom surface of the epitaxial layer; forming a via that extends from a bottom surface of the insulating layer to a bottom surface of one of the transistor components; depositing at least one metal layer on the bottom surface of the insulating layer, on a side wall of the via and on the bottom surface of one of the transistor components; and applying a solder paste to a bottom surface of the at least one metal layer.

Abstract: HEMT having a drain field plate is provided. The drain field plate is formed in the area between the gate and drain of a HEMT. The drain field plate includes a metal pad that has a larger projection area than the drain pad. The drain field plate and semiconductor layer disposed beneath the drain field plate form a metal-semiconductor (M-S) Schottky structure. The capacitance of the M-S Schottky structure generates capacitance in the semiconductor area, which increases the breakdown voltage of the transistor components of the HEMT. A portion of the substrate under the active area may be removed to thereby increase the heat conductivity and reduce the junction temperature of the transistor components of the HEMT.

Abstract: A bulk acoustic wave (BAW) filter for passing through electric signals in a preset frequency range is provided. The BAW filter includes: a diamond substrate; a passivation layer formed on the diamond substrate; a first metal layer formed on the passivation layer; a piezoelectric layer formed on the first metal layer; a second metal layer formed on a piezoelectric layer and a metal pad formed on the first metal layer. The metal pad, first metal layer, piezoelectric layer and second metal layer form an electrical path that allows an electrical signal within a preset frequency range to pass therethrough.

Abstract: The present invention relates to a polypropylene which exhibits high transparency and has a very low level of generation of volatile organic compounds, which has a total volatile organic compounds (TVOC) value of 60 ?g/g or less, which is measured according to VDA 277 standardized by the German Automobile Industry Association by heating the polypropylene for 12 to 5 hours and converting all hydrocarbons detected per 1 g into an acetone content, and a haze value of 5% or less.

Abstract: A bulk acoustic wave (BAW) filter for passing through electric signals in a preset frequency range is provided. The BAW filter includes: a diamond substrate; a passivation layer formed on the diamond substrate; a first metal layer formed on the passivation layer; a piezoelectric layer formed on the first metal layer; a second metal layer formed on a piezoelectric layer and a metal pad formed on the first metal layer. The metal pad, first metal layer, piezoelectric layer and second metal layer form an electrical path that allows an electrical signal within a preset frequency range to pass therethrough.

Abstract: The polypropylene copolymer according to the present invention has a low melting point and also is excellent in the low temperature heat sealing effect, transparency and strength, and the film prepared therefrom can be effectively used as a sealing layer of the non-stretched polypropylene-based film.

Abstract: HEMT having a drain field plate is provided. The drain field plate is formed in the area between the gate and drain of a HEMT. The drain field plate includes a metal pad that has a larger projection area than the drain pad. The drain field plate and semiconductor layer disposed beneath the drain field plate form a metal-semiconductor (M-S) Schottky structure. The capacitance of the M-S Schottky structure generates capacitance in the semiconductor area, which increases the breakdown voltage of the transistor components of the HEMT. A portion of the substrate under the active area may be removed to thereby increase the heat conductivity and reduce the junction temperature of the transistor components of the HEMT.

Abstract: The polypropylene copolymer according to the present invention has a low melting point and also is excellent in the low temperature heat sealing effect, transparency and strength, and the film prepared therefrom can be effectively used as a sealing layer of the non-stretched polypropylene-based film.

Abstract: HEMT having a drain field plate is provided. The drain field plate is formed in the area between the gate and drain of a HEMT. The drain field plate includes a metal pad that has a larger projection area than the drain pad. The drain field plate and semiconductor layer disposed beneath the drain field plate form a metal-semiconductor (M-S) Schottky structure. The capacitance of the M-S Schottky structure generates capacitance in the semiconductor area, which increases the breakdown voltage of the transistor components of the HEMT. A portion of the substrate under the active area may be removed to thereby increase the heat conductivity and reduce the junction temperature of the transistor components of the HEMT.

Abstract: A bulk acoustic wave (BAW) filter for passing through electric signals in a preset frequency range is provided. The BAW filter includes: a diamond substrate; a passivation layer formed on the diamond substrate; a first metal layer formed on the passivation layer; a piezoelectric layer formed on the first metal layer; a second metal layer formed on a piezoelectric layer and a metal pad formed on the first metal layer. The metal pad, first metal layer, piezoelectric layer and second metal layer form an electrical path that allows an electrical signal within a preset frequency range to pass therethrough.

Abstract: Wafers including a diamond layer and a semiconductor layer having III-Nitride compounds and methods for fabricating the wafers are provided. A first SiC layer is formed on a silicon substrate, and using a carbon containing gas, a surface of the first SiC layer is carbonized to form carbon particles on the SiC layer. Then, a diamond layer is grown on the carbonized surface, where the carbon atoms act as seed particles for growing the diamond layer. A second SiC layer is formed on the diamond layer and a semiconductor layer having III-Nitride compounds is formed on the second SiC layer. Then, the silicon substrate and the first SiC layer are removed.

Abstract: The present invention relates to a polypropylene which exhibits high transparency and has a very low level of generation of volatile organic compounds, which has a total volatile organic compounds (TVOC) value of 60 ?g/g or less, which is measured according to VDA 277 standardized by the German Automobile Industry Association by heating the polypropylene for 12 to 5 hours and converting all hydrocarbons detected per 1 g into an acetone content, and a haze value of 5% or less.

Abstract: HEMT having a drain field plate is provided. The drain field plate is formed in the area between the gate and drain of a HEMT. The drain field plate includes a metal pad that has a larger projection area than the drain pad. The drain field plate and semiconductor layer disposed beneath the drain field plate form a metal-semiconductor (M-S) Schottky structure. The capacitance of the M-S Schottky structure generates capacitance in the semiconductor area, which increases the breakdown voltage of the transistor components of the HEMT. A portion of the substrate under the active area may be removed to thereby increase the heat conductivity and reduce the junction temperature of the transistor components of the HEMT.

Abstract: The polypropylene copolymer according to the present invention has a low melting point and also is excellent in the low temperature heat sealing effect, transparency and strength, and the film prepared therefrom can be effectively used as a sealing layer of the non-stretched polypropylene-based film.

Abstract: There is provided a manufacturing method of an LED module including: forming an insulating film on a substrate; forming a first ground pad and a second ground pad separated from each other on the insulating film; forming a first division film that fills a space between the first and second ground pads, a second division film deposited on a surface of the first ground pad, and a third division film deposited on a surface of the second ground pad; forming a first partition layer of a predetermined height on each of the division films; sputtering seed metal to the substrate on which the first partition layer is formed; forming a second partition layer of a predetermined height on the first partition layer; forming a first mirror connected with the first ground pad and a second mirror connected with the second ground pad by performing a metal plating process to the substrate on which the second partition layer is formed; removing the first and second partition layers; connecting a zener diode to the first mirror

Abstract: There is provided a manufacturing method of an LED module including: forming an insulating film on a substrate; forming a first ground pad and a second ground pad separated from each other on the insulating film; forming a first division film that fills a space between the first and second ground pads, a second division film deposited on a surface of the first ground pad, and a third division film deposited on a surface of the second ground pad; forming a first partition layer of a predetermined height on each of the division films; sputtering seed metal to the substrate on which the first partition layer is formed; forming a second partition layer of a predetermined height on the first partition layer; forming a first mirror connected with the first ground pad and a second mirror connected with the second ground pad by performing a metal plating process to the substrate on which the second partition layer is formed; removing the first and second partition layers; connecting a zener diode to the first mirror

Abstract: There is provided a manufacturing method of an LED module including: forming an insulating film on a substrate; forming a first ground pad and a second ground pad separated from each other on the insulating film; forming a first division film that fills a space between the first and second ground pads, a second division film deposited on a surface of the first ground pad, and a third division film deposited on a surface of the second ground pad; forming a first partition layer of a predetermined height on each of the division films; sputtering seed metal to the substrate on which the first partition layer is formed; forming a second partition layer of a predetermined height on the first partition layer; forming a first mirror connected with the first ground pad and a second mirror connected with the second ground pad by performing a metal plating process to the substrate on which the second partition layer is formed; removing the first and second partition layers; connecting a zener diode to the first mirror

Abstract: There is provided a manufacturing method of an LED module including: forming an insulating film on a substrate; forming a first ground pad and a second ground pad separated from each other on the insulating film; forming a first division film that fills a space between the first and second ground pads, a second division film deposited on a surface of the first ground pad, and a third division film deposited on a surface of the second ground pad; forming a first partition layer of a predetermined height on each of the division films; sputtering seed metal to the substrate on which the first partition layer is formed; forming a second partition layer of a predetermined height on the first partition layer; forming a first mirror connected with the first ground pad and a second mirror connected with the second ground pad by performing a metal plating process to the substrate on which the second partition layer is formed; removing the first and second partition layers; connecting a zener diode to the first mirror