Patents by Inventor Won-bong Choi
Won-bong Choi has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 8658484Abstract: Semiconductor carbon nanotubes functionalized by hydrogen and a method for fabricating the same, wherein the functional hydrogenated semiconductor carbon nanotubes have chemical bonds between carbon and hydrogen atoms. The semiconductor carbon nanotube fabricating method includes heating carbon nanotubes in a vacuum, dissociating hydrogen molecules in hydrogen gas into hydrogen atoms, and exposing the carbon nanotubes to the hydrogen gas to form chemical bonds between carbon atoms of the carbon nanotubes and the hydrogen atoms. The conversion of metallic carbon nanotubes into semiconductor nanotubes and of semiconductor nanotubes having a relatively narrow energy bandgap into semiconductor nanotubes having a relative wide energy bandgap can be achieved using the method. The functional hydrogenated semiconductor carbon nanotubes may be applied and used in, for example, electronic devices, optoelectronic devices, and energy storage.Type: GrantFiled: January 31, 2008Date of Patent: February 25, 2014Assignee: Samsung Electronics Co., Ltd.Inventors: Won-bong Choi, Young-hee Lee
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Patent number: 8083905Abstract: The internal and external walls of the carbon nanotubes are doped with nano-sized metallic catalyst particles uniformly to a degree of 0.3-5 mg /cm2. The carbon nanotubes are grown over a carbon substrate using chemical vapor deposition or plasma enhanced chemical vapor deposition. Since the carbon nanotubes have a large specific surface area, and metallic catalyst particles are uniformly distributed over the internal and external walls thereof, the reaction efficiency in an electrode becomes maximal when the carbon nanotubes are used for the electrode of a fuel cell. The carbon nanotubes fabricated using the method can be applied to form a large electrode. The carbon nanotubes grown over the carbon substrate can be readily applied to an electrode of a fuel cell, providing economical advantages and simplifying the overall electrode manufacturing process. A fuel cell using as the carbon nanotubes for its electrode provides improved performance.Type: GrantFiled: July 29, 2009Date of Patent: December 27, 2011Assignee: Samsung SDI Co., Ltd.Inventors: Won-bong Choi, Jae-uk Chu, Chan-ho Pak, Hyuk Chang
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Publication number: 20100018851Abstract: Carbon nanotubes for use in a fuel cell, a method for fabricating the same, and a fuel cell using the carbon nanotubes for its electrode are provided. The internal and external walls of the carbon nanotubes are doped with nano-sized metallic catalyst particles uniformly to a degree of 0.3-5 mg/cm2. The carbon nanotubes are grown over a carbon substrate using chemical vapor deposition or plasma enhanced chemical vapor deposition. Since the carbon nanotubes have a large specific surface area, and metallic catalyst particles are uniformly distributed over the internal and external walls thereof, the reaction efficiency in an electrode becomes maximal when the carbon nanotubes are used for the electrode of a fuel cell. The carbon nanotubes fabricated using the method can be applied to form a large electrode. The carbon nanotubes grown over the carbon substrate can be readily applied to an electrode of a fuel cell, providing economical advantages and simplifying the overall electrode manufacturing process.Type: ApplicationFiled: July 29, 2009Publication date: January 28, 2010Applicant: SAMSUNG SDI Co., Ltd.Inventors: Won-bong CHOI, Jae-uk Chu, Chan-ho Park, Hyuk Chang
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Patent number: 7585584Abstract: Carbon nanotubes for use in a fuel cell, a method for fabricating the same, and a fuel cell using the carbon nanotubes for its electrode are provided. The internal and external walls of the carbon nanotubes are doped with nano-sized metallic catalyst particles uniformly to a degree of 0.3-5 mg/cm2. The carbon nanotubes are grown over a carbon substrate using chemical vapor deposition or plasma enhanced chemical vapor deposition. Since the carbon nanotubes have a large specific surface area, and metallic catalyst particles are uniformly distributed over the internal and external walls thereof, the reaction efficiency in an electrode becomes maximal when the carbon nanotubes are used for the electrode of a fuel cell. The carbon nanotubes fabricated using the method can be applied to form a large electrode. The carbon nanotubes grown over the carbon substrate can be readily applied to an electrode of a fuel cell, providing economical advantages and simplifying the overall electrode manufacturing process.Type: GrantFiled: June 24, 2003Date of Patent: September 8, 2009Assignee: Samsung SDI Co., Ltd.Inventors: Won-bong Choi, Jae-uk Chu, Chan-ho Pak, Hyuk Chang
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Publication number: 20080181838Abstract: Semiconductor carbon nanotubes functionalized by hydrogen and a method for fabricating the same, wherein the functional hydrogenated semiconductor carbon nanotubes have chemical bonds between carbon and hydrogen atoms. The semiconductor carbon nanotube fabricating method includes heating carbon nanotubes in a vacuum, dissociating hydrogen molecules in hydrogen gas into hydrogen atoms, and exposing the carbon nanotubes to the hydrogen gas to form chemical bonds between carbon atoms of the carbon nanotubes and the hydrogen atoms. The conversion of metallic carbon nanotubes into semiconductor nanotubes and of semiconductor nanotubes having a relatively narrow energy bandgap into semiconductor nanotubes having a relative wide energy bandgap can be achieved using the method. The functional hydrogenated semiconductor carbon nanotubes may be applied and used in, for example, electronic devices, optoelectronic devices, and energy storage.Type: ApplicationFiled: January 31, 2008Publication date: July 31, 2008Applicant: SAMSUNG ELECTRONICS CO., LTD.Inventors: WON-BONG CHOI, Young-hee Lee
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Patent number: 7405126Abstract: Provided is a memory device formed using quantum devices and a method for manufacturing the same. A memory device includes a substrate; a source region and a drain region formed in the substrate so as to be separated from each other by a predetermined interval. A memory cell is formed on the surface of the substrate to connect the source region and the drain region, and has a plurality of nano-sized quantum dots filled with material for storing electrons. A control gate is formed on the memory cell and controls the number of electrons stored in the memory cell. It is possible to embody a highly efficient and highly integrated memory device by providing a memory device having nano-sized quantum dots and a method for manufacturing the same.Type: GrantFiled: July 18, 2007Date of Patent: July 29, 2008Assignee: Samsung Electronics Co., Ltd.Inventors: Won-bong Choi, Soo-doo Chae
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Patent number: 7378328Abstract: A fast, reliable, highly integrated memory device formed of a carbon nanotube memory device and a method for forming the same, in which the carbon nanotube memory device includes a substrate, a source electrode, a drain electrode, a carbon nanotube having high electrical and thermal conductivity, a memory cell having excellent charge storage capability, and a gate electrode. The source electrode and drain electrode are arranged with a predetermined interval between them on the substrate and are subjected to a voltage. The carbon nanotube connects the source electrode to the drain electrode and serves as a channel for charge movement. The memory cell is located over the carbon nanotube and stores charges from the carbon nanotube. The gate electrode is formed in contact with the upper surface of the memory cell and controls the amount of charge flowing from the carbon nanotube into the memory cell.Type: GrantFiled: February 13, 2006Date of Patent: May 27, 2008Assignee: Samsung Electronics Co., Ltd.Inventors: Won-bong Choi, In-kyeong Yoo, Jae-uk Chu
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Patent number: 7355951Abstract: A rapid data recording/reproducing method, a data recording system adopting the same, media for the system, and a tracking method, wherein the recording/reproducing method includes preparing media having a data recording layer in which a phase change is generated through electron absorption, generating electrons using an electron generating source at a position separated from the data recording layer by a predetermined interval, forming a magnetic field on the path of the electrons and cyclotron moving the electrons, recording data through local melting and cooling due to absorption of the electrons by the data recording layer. A micro-tip does not contact the data recording layer during electron collisions therewith, hence no damage is caused by or to the micro-tip. The present invention allows the region where the electron beam reaches the data recording layer to be minimized thereby maximizing the data recording density.Type: GrantFiled: September 23, 2002Date of Patent: April 8, 2008Assignee: Samsung Electronics Co., Ltd.Inventors: In-kyeong Yoo, Won-bong Choi, Hyun-jung Shin
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Patent number: 7326605Abstract: Semiconductor carbon nanotubes functionalized by hydrogen and a method for fabricating the same, wherein the functional hydrogenated semiconductor carbon nanotubes have chemical bonds between carbon and hydrogen atoms. The semiconductor carbon nanotube fabricating method includes heating carbon nanotubes in a vacuum, dissociating hydrogen molecules in hydrogen gas into hydrogen atoms, and exposing the carbon nanotubes to the hydrogen gas to form chemical bonds between carbon atoms of the carbon nanotubes and the hydrogen atoms. The conversion of metallic carbon nanotubes into semiconductor nanotubes and of semiconductor nanotubes having a relatively narrow energy bandgap into semiconductor nanotubes having a relative wide energy bandgap can be achieved using the method. The functional hydrogenated semiconductor carbon nanotubes may be applied and used in, for example, electronic devices, optoelectronic devices, and energy storage.Type: GrantFiled: January 9, 2006Date of Patent: February 5, 2008Assignee: Samsung Electronics Co., Ltd.Inventors: Won-bong Choi, Young-hee Lee
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Publication number: 20070264778Abstract: Provided is a memory device formed using quantum devices and a method for manufacturing the same. A memory device comprises a substrate; a source region and a drain region formed in the substrate so as to be separated from each other by a predetermined interval; a memory cell which is formed on the surface of the substrate to connect the source region and the drain region, and has a plurality of nano-sized quantum dots filled with material for storing electrons; and a control gate which is formed on the memory cell and controls the number of electrons stored in the memory cell. It is possible to embody a highly efficient and highly integrated memory device by providing a memory device having nano-sized quantum dots and a method for manufacturing the same.Type: ApplicationFiled: July 18, 2007Publication date: November 15, 2007Applicant: SAMSUNG ELECTRONICS CO., LTD.Inventors: Won-bong Choi, Soo-doo Chae
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Patent number: 7259068Abstract: Provided is a memory device formed using quantum devices and a method for manufacturing the same. A memory device comprises a substrate; a source region and a drain region formed in the substrate so as to be separated from each other by a predetermined interval; a memory cell which is formed on the surface of the substrate to connect the source region and the drain region, and has a plurality of nano-sized quantum dots filled with material for storing electrons; and a control gate which is formed on the memory cell and controls the number of electrons stored in the memory cell. It is possible to embody a highly efficient and highly integrated memory device by providing a memory device having nano-sized quantum dots and a method for manufacturing the same.Type: GrantFiled: May 27, 2005Date of Patent: August 21, 2007Assignee: Samsung Electronics Co., Ltd.Inventors: Won-bong Choi, Soo-doo Chae
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Patent number: 7247897Abstract: In a method of forming a conductive line for a semiconductor device using a carbon nanotube and a semiconductor device manufactured using the method, the method includes activating a surface of an electrode of the semiconductor device using surface pretreatment to create an activated surface of the electrode, forming an insulating layer on the activated surface of the electrode, and forming a contact hole through the insulating layer to expose a portion of the activated surface of the electrode, and supplying a carbon-containing gas onto the activated surface of the electrode through the contact hole to grow a carbon nanotube, which forms the conductive line, on the activated surface of the electrode. Alternatively, the activation step of the surface of the electrode may be replaced with a formation of a catalytic metal layer on the surface of the electrode.Type: GrantFiled: October 26, 2005Date of Patent: July 24, 2007Assignee: Samsung Electronics Co., Ltd.Inventors: Won-bong Choi, Eun-ju Bae, Hideki Horii
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Publication number: 20060252276Abstract: A fast, reliable, highly integrated memory device formed of a carbon nanotube memory device and a method for forming the same, in which the carbon nanotube memory device includes a substrate, a source electrode, a drain electrode, a carbon nanotube having high electrical and thermal conductivity, a memory cell having excellent charge storage capability, and a gate electrode. The source electrode and drain electrode are arranged with a predetermined interval between them on the substrate and are subjected to a voltage. The carbon nanotube connects the source electrode to the drain electrode and serves as a channel for charge movement. The memory cell is located over the carbon nanotube and stores charges from the carbon nanotube. The gate electrode is formed in contact with the upper surface of the memory cell and controls the amount of charge flowing from the carbon nanotube into the memory cell.Type: ApplicationFiled: February 13, 2006Publication date: November 9, 2006Applicant: SAMSUNG ELECTRONICS CO., LTD.Inventors: Won-bong Choi, In-kyeong Yoo, Jae-uk Chu
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Publication number: 20060237708Abstract: Semiconductor carbon nanotubes functionalized by hydrogen and a method for fabricating the same, wherein the functional hydrogenated semiconductor carbon nanotubes have chemical bonds between carbon and hydrogen atoms. The semiconductor carbon nanotube fabricating method includes heating carbon nanotubes in a vacuum, dissociating hydrogen molecules in hydrogen gas into hydrogen atoms, and exposing the carbon nanotubes to the hydrogen gas to form chemical bonds between carbon atoms of the carbon nanotubes and the hydrogen atoms. The conversion of metallic carbon nanotubes into semiconductor nanotubes and of semiconductor nanotubes having a relatively narrow energy bandgap into semiconductor nanotubes having a relative wide energy bandgap can be achieved using the method. The functional hydrogenated semiconductor carbon nanotubes may be applied and used in, for example, electronic devices, optoelectronic devices, and energy storage.Type: ApplicationFiled: January 9, 2006Publication date: October 26, 2006Applicant: SAMSUNG ELECTRONICS CO., LTD.Inventors: Won-bong Choi, Young-hee Lee
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Patent number: 7060543Abstract: In a method of forming a conductive line for a semiconductor device using a carbon nanotube and a semiconductor device manufactured using the method, the method includes activating a surface of an electrode of the semiconductor device using surface pretreatment to create an activated surface of the electrode, forming an insulating layer on the activated surface of the electrode, and forming a contact hole through the insulating layer to expose a portion of the activated surface of the electrode, and supplying a carbon-containing gas onto the activated surface of the electrode through the contact hole to grow a carbon nanotube, which forms the conductive line, on the activated surface of the electrode. Alternatively, the activation step of the surface of the electrode may be replaced with a formation of a catalytic metal layer on the surface of the electrode.Type: GrantFiled: April 30, 2004Date of Patent: June 13, 2006Assignee: Samsung Electronics Co., Ltd.Inventors: Won-bong Choi, Eun-ju Bae, Hideki Horii
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Patent number: 7015500Abstract: A fast, reliable, highly integrated memory device formed of a carbon nanotube memory device and a method for forming the same, in which the carbon nanotube memory device includes a substrate, a source electrode, a drain electrode, a carbon nanotube having high electrical and thermal conductivity, a memory cell having excellent charge storage capability, and a gate electrode. The source electrode and drain electrode are arranged with a predetermined interval between them on the substrate and are subjected to a voltage. The carbon nanotube connects the source electrode to the drain electrode and serves as a channel for charge movement. The memory cell is located over the carbon nanotube and stores charges from the carbon nanotube. The gate electrode is formed in contact with the upper surface of the memory cell and controls the amount of charge flowing from the carbon nanotube into the memory cell.Type: GrantFiled: February 10, 2003Date of Patent: March 21, 2006Assignee: Samsung Electronics Co., Ltd.Inventors: Won-bong Choi, In-kyeong Yoo, Jae-uk Chu
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Publication number: 20060046445Abstract: In a method of forming a conductive line for a semiconductor device using a carbon nanotube and a semiconductor device manufactured using the method, the method includes activating a surface of an electrode of the semiconductor device using surface pretreatment to create an activated surface of the electrode, forming an insulating layer on the activated surface of the electrode, and forming a contact hole through the insulating layer to expose a portion of the activated surface of the electrode, and supplying a carbon-containing gas onto the activated surface of the electrode through the contact hole to grow a carbon nanotube, which forms the conductive line, on the activated surface of the electrode. Alternatively, the activation step of the surface of the electrode may be replaced with a formation of a catalytic metal layer on the surface of the electrode.Type: ApplicationFiled: October 26, 2005Publication date: March 2, 2006Applicant: SAMSUNG ELECTRONICS CO., LTD.Inventors: Won-bong Choi, Eun-ju Bae, Hideki Horii
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Patent number: 7005391Abstract: A method of manufacturing an inorganic nanotube using a carbon nanotube (CNT) as a template, includes preparing a template on which a CNT or a CNT array is formed, forming an inorganic thin film on the CNT by depositing an inorganic material on the template using atomic layer deposition (ALD), and removing the CNT to obtain an inorganic nanotube or an inorganic nanotube array, respectively.Type: GrantFiled: June 19, 2003Date of Patent: February 28, 2006Assignee: Samsung Electronics Co., Ltd.Inventors: Yo-sep Min, Eun-ju Bae, Won-bong Choi, Young-jin Cho, Jung-hyun Lee
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Patent number: 6998634Abstract: A memory device using vertical nanotubes includes an array of first electrodes arranged in strips in a first direction, a dielectric layer deposited on the array of first electrodes, the dielectric layer having a plurality of holes arranged therein, an array of nanotubes for emitting electrons, the array of nanotubes contacting the array of first electrodes and vertically growing through the plurality of holes in the dielectric layer, an array of second electrodes arranged in strips in a second direction on the dielectric layer, the array of second electrodes contacting the array of nanotubes, wherein the second direction is perpendicular to the first direction, a memory cell positioned on the array of second electrodes for trapping electrons emitted from the array of nanotubes, and a gate electrode deposited on an upper surface of the memory cell for forming an electric field around the array of nanotubes.Type: GrantFiled: December 30, 2003Date of Patent: February 14, 2006Assignee: Samsung Electronics Co., Ltd.Inventors: Byoung-ho Cheong, Won-bong Choi
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Patent number: 6976897Abstract: A field emission array adopting carbon nanotubes as an electron emitter source, wherein the array includes a rear substrate assembly including cathodes formed as stripes over a rear substrate and carbon nanotubes; a front substrate assembly including anodes formed as stripes over a front substrate with phosphors being deposited on the anodes, a plurality of openings separated by a distance corresponding to the distance between the anodes in a nonconductive plate, and gates formed as stripes perpendicular to the stripes of anodes on the nonconductive plate with a plurality of emitter openings corresponding to the plurality of openings. The nonconductive plate is supported and separated from the front substrate using spacers. The rear substrate assembly is combined with the front substrate assembly such that the carbon nanotubes on the cathodes project through the emitter openings.Type: GrantFiled: September 10, 2003Date of Patent: December 20, 2005Assignee: Samsung SDI Co., Ltd.Inventors: Won-bong Choi, Min-jae Yun, Yong-wan Jin