Abstract: Provided is a substrate processing apparatus, and more particularly, a batch-type substrate processing apparatus where processes can be performed independently on a plurality of substrates. The substrate processing apparatus includes a substrate boat including a plurality of partition plates and a plurality of connection rods, an internal reaction tube, a gas supply unit, and an exhaust unit, and a plurality of substrates are loaded to be separated from the partition plates.

Abstract: Provided is a method and apparatus for depositing an amorphous silicon film. The method includes supplying a source gas and an atmospheric gas onto a substrate in a state where the substrate is loaded in a chamber to deposit the amorphous silicon film on the substrate. The atmospheric gas includes at least one of hydrogen and helium. The source gas includes at least one of silane (SiH2), disilane (Si2H6), and dichlorosilane (SiCl2H2).

Abstract: The present disclosure relates to a semiconductor memory, device and a method of forming a semiconductor memory device. The method of manufacturing a semiconductor memory device, includes forming a tunnel insulation layer and a floating gate on a semiconductor substrate of an active region, forming a trench in the semiconductor substrate of an isolation region, forming, in the trench, a sacrificial layer having an upper surface positioned higher than a surface of the semiconductor substrate, forming a capping layer over the sacrificial layer, and forming an air gap by removing the sacrificial layer without removing the capping layer.

Abstract: A semiconductor device includes a semiconductor substrate having a plurality of isolation regions, a plurality of trenches, where each of the plurality of trenches is formed in a corresponding isolation region, of the plurality of isolation regions, and where the plurality of trenches are arranged, in parallel, along a first direction, a plurality of gate lines formed on the semiconductor substrate in a second direction crossing the plurality of trenches, an insulating layer formed between each of the plurality of gate lines, a first air gap formed in at least one of the plurality of trenches, the first air gap extending in the first direction, and a second air gap formed in at least one of the insulating layers, the second air gap extending in the second direction.

Abstract: The present disclosure relates to a semiconductor memory, device and a method of forming a semiconductor memory device. The semiconductor memory device includes a semiconductor substrate in which isolation regions and active regions are defined, gate lines formed on the semiconductor substrate in a direction crossing the isolation regions, a capping layer configured to define air gaps positioned higher than an upper surface of the semiconductor substrate in the isolation regions.

Abstract: A semiconductor device includes a semiconductor substrate having a plurality of isolation regions, a plurality of trenches, where each of the plurality of trenches is formed in a corresponding isolation region, of the plurality of isolation regions, and where the plurality of trenches are arranged, in parallel, along a first direction, a plurality of gate lines formed on the semiconductor substrate in a second direction crossing the plurality of trenches, an insulating layer formed between each of the plurality of gate lines, a first air gap formed in at least one of the plurality of trenches, the first air gap extending in the first direction, and a second air gap formed in at least one of the insulating layers, the second air gap extending in the second direction.