Patents by Inventor Woo-gwan Shim
Woo-gwan Shim has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 11664243Abstract: A substrate processing apparatus includes: a spin chuck, on which a substrate is mounted, the spin chuck rotating the substrate; At least one of a chemical liquid nozzle configured to provide a chemical liquid to a surface of the substrate and a deionzed water nozzle configured to provide a deionized water to a surface of the substrate; and a laser device configured to emit a pulse waver laser beam having a period of 10?9 seconds or less for etching an edge of the substrate.Type: GrantFiled: June 13, 2019Date of Patent: May 30, 2023Assignee: Samsung Electronics Co., Ltd.Inventors: Sang-jine Park, Seung-ho Lee, Bo-wo Choi, Yong-sun Ko, Woo-gwan Shim
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Patent number: 11361960Abstract: A substrate processing apparatus includes a chamber providing a space in which a substrate is processed, a first substrate support within the chamber and configured to support the substrate when the substrate is loaded into chamber, a second substrate support within the chamber and configured to support the substrate in a height greater than the height in which the first substrate supports the substrate, a first supply port through which a supercritical fluid is supplied to a first space under the substrate of a chamber space, a second supply port through which the supercritical fluid is supplied to a second space above the substrate of the chamber space, and an exhaust port through which the supercritical fluid is exhausted from the chamber.Type: GrantFiled: June 4, 2020Date of Patent: June 14, 2022Assignees: SEMES CO., LTD., SAMSUNG ELECTRONICS CO., LTD.Inventors: Won-Ho Jang, Jeong-Yong Bae, Woo-Young Kim, Hyun-Jung Lee, Se-Jin Park, Yong-Sun Ko, Dong-Gyun Han, Woo-Gwan Shim, Boong Kim
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Patent number: 10910237Abstract: A wet etching system operating method includes providing an etching apparatus having an Nth etching solution, loading Nth batch substrates into the etching apparatus and performing an Nth etching process, discharging some of the Nth etching solution, refilling the etching apparatus with an (N+1)th etching solution supplied from a supply apparatus connected to the etching apparatus, and loading (N+1)th batch substrates into the etching apparatus and performing an (N+1)th etching process, wherein the (N+1)th etching solution has a temperature within or higher than a temperature management range of the (N+1)th etching process, and wherein the (N+1)th etching solution has a concentration within or higher than a concentration management range of the (N+1)th etching solution, N being a positive integer.Type: GrantFiled: July 3, 2019Date of Patent: February 2, 2021Assignee: SAMSUNG ELECTRONICS CO., LTD.Inventors: Sang Hoon Jeong, Yong Sun Ko, Dong Ha Kim, Tae Heon Kim, Chang Sup Mun, Woo Gwan Shim, Jun Youl Yang, Se Ho Cha
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Publication number: 20200303182Abstract: A substrate processing apparatus includes a chamber providing a space in which a substrate is processed, a first substrate support within the chamber and configured to support the substrate when the substrate is loaded into chamber, a second substrate support within the chamber and configured to support the substrate in a height greater than the height in which the first substrate supports the substrate, a first supply port through which a supercritical fluid is supplied to a first space under the substrate of a chamber space, a second supply port through which the supercritical fluid is supplied to a second space above the substrate of the chamber space, and an exhaust port through which the supercritical fluid is exhausted from the chamber.Type: ApplicationFiled: June 4, 2020Publication date: September 24, 2020Applicants: Samsung Electronics Co., Ltd., SEMES CO., LTD.Inventors: Won-Ho JANG, Jeong-Yong BAE, Woo-Young KIM, Hyun-Jung LEE, Se-Jin PARK, Yong-Sun KO, Dong-Gyun HAN, Woo-Gwan SHIM, Boong KIM
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Patent number: 10707071Abstract: A substrate processing apparatus includes a chamber providing a space in which a substrate is processed, a first substrate support within the chamber and configured to support the substrate when the substrate is loaded into chamber, a second substrate support within the chamber and configured to support the substrate in a height greater than the height in which the first substrate supports the substrate, a first supply port through which a supercritical fluid is supplied to a first space under the substrate of a chamber space, a second supply port through which the supercritical fluid is supplied to a second space above the substrate of the chamber space, and an exhaust port through which the supercritical fluid is exhausted from the chamber.Type: GrantFiled: November 30, 2017Date of Patent: July 7, 2020Assignees: Samsung Electronics Co., Ltd., Semes Co., Ltd.Inventors: Won-Ho Jang, Hyun-Jung Lee, Se-Jin Park, Yong-Sun Ko, Dong-Gyun Han, Woo-Gwan Shim, Jeong-Yong Bae, Woo-Young Kim, Boong Kim
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Publication number: 20200203195Abstract: A wet etching system operating method includes providing an etching apparatus having an Nth etching solution, loading Nth batch substrates into the etching apparatus and performing an Nth etching process, discharging some of the Nth etching solution, refilling the etching apparatus with an (N+1)th etching solution supplied from a supply apparatus connected to the etching apparatus, and loading (N+1)th batch substrates into the etching apparatus and performing an (N+1)th etching process, wherein the (N+1)th etching solution has a temperature within or higher than a temperature management range of the (N+1)th etching process, and wherein the (N+1)th etching solution has a concentration within or higher than a concentration management range of the (N+1)th etching solution, N being a positive integer.Type: ApplicationFiled: July 3, 2019Publication date: June 25, 2020Inventors: Sang Hoon JEONG, Yong Sun KO, Dong Ha KIM, Tae Heon KIM, Chang Sup MUN, Woo Gwan SHIM, Jun Youl YANG, Se Ho CHA
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Publication number: 20200194284Abstract: A substrate processing apparatus includes: a spin chuck, on which a substrate is mounted, the spin chuck rotating the substrate; At least one of a chemical liquid nozzle configured to provide a chemical liquid to a surface of the substrate and a deionzed water nozzle configured to provide a deionized water to a surface of the substrate; and a laser device configured to emit a pulse waver laser beam having a period of 10?9 seconds or less for etching an edge of the substrate.Type: ApplicationFiled: June 13, 2019Publication date: June 18, 2020Applicant: Samsung Electronics Co., Ltd.Inventors: Sang-jine Park, Seung-ho Lee, Bo-wo Choi, Yong-sun Ko, Woo-gwan Shim
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Publication number: 20180190485Abstract: A substrate processing apparatus includes a chamber providing a space in which a substrate is processed, a first substrate support within the chamber and configured to support the substrate when the substrate is loaded into chamber, a second substrate support within the chamber and configured to support the substrate in a height greater than the height in which the first substrate supports the substrate, a first supply port through which a supercritical fluid is supplied to a first space under the substrate of a chamber space, a second supply port through which the supercritical fluid is supplied to a second space above the substrate of the chamber space, and an exhaust port through which the supercritical fluid is exhausted from the chamber.Type: ApplicationFiled: November 30, 2017Publication date: July 5, 2018Applicants: Samsung Electronics Co., Ltd., SEMES CO., LTD.Inventors: Won-Ho JANG, Hyun-Jung LEE, Se-Jin PARK, Yong-Sun KO, Dong-Gyun HAN, Woo-Gwan SHIM, Jeong-Yong BAE, Woo-Young KIM, Boong KIM
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Patent number: 8790470Abstract: Provided herein are etching, cleaning and drying methods using a supercritical fluid, and a chamber system for conducting the same. The etching method includes etching the material layer using a supercritical carbon dioxide in which an etching chemical is dissolved, and removing an etching by-product created from a reaction between the material layer and the etching chemical using a supercritical carbon dioxide in which a cleaning chemical is dissolved. Methods of manufacturing a semiconductor device are also provided.Type: GrantFiled: December 15, 2011Date of Patent: July 29, 2014Assignee: Samsung Electronics Co., Ltd.Inventors: Hyo-san Lee, Chang-Ki Hong, Kun-Tack Lee, Woo-Gwan Shim, Jeong-Nam Han, Jung-Min Oh, Kwon-Taek Lim, Ha-Soo Hwang, Haldorai Yuvaraj, Jae-Mok Jung
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Patent number: 8766343Abstract: In a method of forming a capacitor, a first mold layer pattern including a first insulating material may be formed on a substrate. The first mold layer pattern may have a trench. A supporting layer including a second insulating material may be formed in the trench. The second insulating material may have an etching selectivity with respect to the first insulating material. A second mold layer may be formed on the first mold layer pattern and the supporting layer pattern. A lower electrode may be formed through the second mold layer and the first mold layer pattern. The lower electrode may make contact with a sidewall of the supporting layer pattern. The first mold layer pattern and the second mold layer may be removed. A dielectric layer and an upper electrode may be formed on the lower electrode and the supporting layer pattern.Type: GrantFiled: January 23, 2012Date of Patent: July 1, 2014Assignee: Samsung Electronics Co., Ltd.Inventors: Dae-Hyuk Kang, Bo-Un Yoon, Kun-Tack Lee, Woo-Gwan Shim, Ji-Hoon Cha, Im-Soo Park, Hyo-San Lee, Young-Hoo Kim, Jung-Min Oh
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Patent number: 8637942Abstract: A transistor having a metal nitride layer pattern, etchant and methods of forming the same is provided. A gate insulating layer and/or a metal nitride layer may be formed on a semiconductor substrate. A mask layer may be formed on the metal nitride layer. Using the mask layer as an etching mask, an etching process may be performed on the metal nitride layer, forming the metal nitride layer pattern. An etchant, which may have an oxidizing agent, a chelate agent and/or a pH adjusting mixture, may perform the etching. The methods may reduce etching damage to a gate insulating layer under the metal nitride layer pattern during the formation of a transistor.Type: GrantFiled: August 31, 2009Date of Patent: January 28, 2014Assignee: Samsung Electronics Co., Ltd.Inventors: Sang-Yong Kim, Ji-Hoon Cha, Woo-Gwan Shim, Chang-Ki Hong, Sang-Jun Choi
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Patent number: 8585917Abstract: Provided herein are etching, cleaning and drying methods using a supercritical fluid, and a chamber system for conducting the same. The etching method includes etching the material layer using a supercritical carbon dioxide in which an etching chemical is dissolved, and removing an etching by-product created from a reaction between the material layer and the etching chemical using a supercritical carbon dioxide in which a cleaning chemical is dissolved. Methods of manufacturing a semiconductor device are also provided.Type: GrantFiled: December 15, 2011Date of Patent: November 19, 2013Assignee: Samsung Electronics Co., Ltd.Inventors: Hyo-san Lee, Chang-Ki Hong, Kun-Tack Lee, Woo-Gwan Shim, Jeong-Nam Han, Jung-Min Oh, Kwon-Taek Lim, Ha-Soo Hwang, Haldorai Yuvaraj, Jae-Mok Jung
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Publication number: 20120112317Abstract: In a method of forming a capacitor, a first mold layer pattern including a first insulating material may be formed on a substrate. The first mold layer pattern may have a trench. A supporting layer including a second insulating material may be formed in the trench. The second insulating material may have an etching selectivity with respect to the first insulating material. A second mold layer may be formed on the first mold layer pattern and the supporting layer pattern. A lower electrode may be formed through the second mold layer and the first mold layer pattern. The lower electrode may make contact with a sidewall of the supporting layer pattern. The first mold layer pattern and the second mold layer may be removed. A dielectric layer and an upper electrode may be formed on the lower electrode and the supporting layer pattern.Type: ApplicationFiled: January 23, 2012Publication date: May 10, 2012Inventors: Dae-Hyuk Kang, Bo-Un Yoon, Kun-Tack Lee, Woo-Gwan Shim, Ji-Hoon Cha, Im-Soo Park, Hyo-San Lee, Young-Hoo Kim, Jung-Min Oh
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Publication number: 20120085495Abstract: Provided herein are etching, cleaning and drying methods using a supercritical fluid, and a chamber system for conducting the same. The etching method includes etching the material layer using a supercritical carbon dioxide in which an etching chemical is dissolved, and removing an etching by-product created from a reaction between the material layer and the etching chemical using a supercritical carbon dioxide in which a cleaning chemical is dissolved. Methods of manufacturing a semiconductor device are also provided.Type: ApplicationFiled: December 15, 2011Publication date: April 12, 2012Inventors: Hyo-San Lee, Chang-Ki Hong, Kun-Tack Lee, Woo-Gwan Shim, Jeong-Nam Han, Jung-Min Oh, Kwon-Tack Lim, Ha-Soo Hwang, Haldori Vuvaraj, Jae-Monk Jung
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Publication number: 20120080059Abstract: Provided herein are etching, cleaning and drying methods using a supercritical fluid, and a chamber system for conducting the same. The etching method includes etching the material layer using a supercritical carbon dioxide in which an etching chemical is dissolved, and removing an etching by-product created from a reaction between the material layer and the etching chemical using a supercritical carbon dioxide in which a cleaning chemical is dissolved. Methods of manufacturing a semiconductor device are also provided.Type: ApplicationFiled: December 15, 2011Publication date: April 5, 2012Inventors: Hyo-san Lee, Chang-Ki Hong, Kun-Tack Lee, Woo-Gwan Shim, Jeong-Nam Han, Jung-Min Oh, Kwon-Taek Lim, Ha-Soo Hwang, Haldural Yuvaraj, Jae-Mok Jung
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Patent number: 8119476Abstract: In a method of forming a capacitor, a first mold layer pattern including a first insulating material may be formed on a substrate. The first mold layer pattern may have a trench. A supporting layer including a second insulating material may be formed in the trench. The second insulating material may have an etching selectivity with respect to the first insulating material. A second mold layer may be formed on the first mold layer pattern and the supporting layer pattern. A lower electrode may be formed through the second mold layer and the first mold layer pattern. The lower electrode may make contact with a sidewall of the supporting layer pattern. The first mold layer pattern and the second mold layer may be removed. A dielectric layer and an upper electrode may be formed on the lower electrode and the supporting layer pattern.Type: GrantFiled: October 18, 2010Date of Patent: February 21, 2012Assignee: Samsung Electronics Co., Ltd.Inventors: Dae-Hyuk Kang, Bo-Un Yoon, Kun-Tack Lee, Woo-Gwan Shim, Ji-Hoon Cha, Im-Soo Park, Hyo-San Lee, Young-Hoo Kim, Jung-Min Oh
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Patent number: 8084367Abstract: Provided herein are etching, cleaning and drying methods using a supercritical fluid, and a chamber system for conducting the same. The etching method includes etching the material layer using a supercritical carbon dioxide in which an etching chemical is dissolved, and removing an etching by-product created from a reaction between the material layer and the etching chemical using a supercritical carbon dioxide in which a cleaning chemical is dissolved. Methods of manufacturing a semiconductor device are also provided.Type: GrantFiled: May 23, 2007Date of Patent: December 27, 2011Assignees: Samsung Electronics Co., Ltd, Pukyong National UniversityInventors: Hyo-san Lee, Chang-Ki Hong, Kun-Tack Lee, Woo-Gwan Shim, Jeong-Nam Han, Jung-Min Oh, Kwon-Taek Lim, Ha-Soo Hwang, Haldorai Yuvaraj, Jae-Mok Jung
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Patent number: 8058180Abstract: This invention provides methods of fabricating semiconductor devices, wherein an alloy layer is formed on a semiconductor substrate to form a substrate structure, which methods include using an aqueous solution diluted ammonia and peroxide mixture (APM) to perform cleaning and/or wet etching treatment steps on the substrate structure.Type: GrantFiled: February 15, 2008Date of Patent: November 15, 2011Assignee: Samsung Electronics Co., Ltd.Inventors: Doo-Won Kwon, Hyung-Ho Ko, Chang-Sup Mun, Woo-Gwan Shim, Im-Soo Park, Yu-Kyung Kim, Jeong-Nam Han
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Patent number: 7985999Abstract: A semiconductor device having a capacitor and a method of fabricating the same may be provided. A method of fabricating a semiconductor device may include forming an etch stop layer and a mold layer sequentially on a substrate, patterning the mold layer to form a mold electrode hole exposing a portion of the etch stop layer, etching selectively the exposed etch stop layer by an isotropic dry etching process to form a contact electrode hole through the etch stop layer to expose a portion of the substrate, forming a conductive layer on the substrate and removing the conductive layer on the mold layer on the mold layer to form a cylindrical bottom electrode in the mold and contact electrode holes. The isotropic dry etching process may utilize a process gas including main etching gas and selectivity adjusting gas. The selectivity adjusting gas may increase an etch rate of the etch stop layer by more than an etch rate of the mold layer by the isotropic wet etching process.Type: GrantFiled: March 18, 2010Date of Patent: July 26, 2011Assignee: Samsung Electronics Co., Ltd.Inventors: Jung-Min Oh, Jeong-Nam Han, Chang-Ki Hong, Woo-Gwan Shim, Im-Soo Park
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Publication number: 20110159660Abstract: In a method of forming a capacitor, a first mold layer pattern including a first insulating material may be formed on a substrate. The first mold layer pattern may have a trench. A supporting layer including a second insulating material may be formed in the trench. The second insulating material may have an etching selectivity with respect to the first insulating material. A second mold layer may be formed on the first mold layer pattern and the supporting layer pattern. A lower electrode may be formed through the second mold layer and the first mold layer pattern. The lower electrode may make contact with a sidewall of the supporting layer pattern. The first mold layer pattern and the second mold layer may be removed. A dielectric layer and an upper electrode may be formed on the lower electrode and the supporting layer pattern.Type: ApplicationFiled: October 18, 2010Publication date: June 30, 2011Inventors: Dae-Hyuk Kang, Bo-Un Yoon, Kun-Tack Lee, Woo-Gwan Shim, Ji-Hoon Cha, Im-Soo Park, Hyo-San Lee, Young-Hoo Kim, Jung-Min Oh