Abstract: A method for fabricating a semiconductor device includes sequentially forming an etch stop film and an insulating film on a substrate including a lower pattern forming a conductive mask pattern including a first opening on the insulating film, forming a via-hole in the insulating film using the conductive mask pattern as an etch mask, the via-hole exposing the etch stop film, removing the conductive mask pattern, and forming a passivation film along a side wall of the via-hole after removing the conductive mask pattern.

Abstract: A method for fabricating a semiconductor device includes sequentially forming an etch stop film and an insulating film on a substrate including a lower pattern forming a conductive mask pattern including a first opening on the insulating film, forming a via-hole in the insulating film using the conductive mask pattern as an etch mask, the via-hole exposing the etch stop film, removing the conductive mask pattern, and forming a passivation film along a side wall of the via-hole after removing the conductive mask pattern.

Abstract: Disclosed is a monitoring TEG for an etching process in a semiconductor device. The TEG includes an etch stopping layer on a substrate and a target layer to be etched provided on the etch stopping layer. The target layer to be etched includes a first opening portion formed by etching a portion of the target layer to be etched and a second opening portion formed by etching another portion of the target layer to be etched. The second opening portion has a smaller depth than the first opening portion. A depth of a partial contact hole formed by a first partial etching process may be measured.

Abstract: An apparatus for adjusting the level of a refrigerator includes: a main body; a guide groove formed to be level in a forward/backward direction of the main body; a movement unit inserted in the guide groove and moving in the direction in which the main body is inclined; a contact point part formed at one of both ends of the guide groove and selectively connected to the movement unit; and a notifying unit informing about whether or not the contact point part is connected. When the refrigerator is installed, an installation technician can recognize whether or not the refrigerator is installed to be level regardless of a skilled degree of the installation technician, so the installation time can be shortened and a service satisfaction of consumers can be increased.

Abstract: Methods of forming integrated circuit devices include forming an interlayer insulating layer having a trench therein, on a substrate and forming an electrical interconnect (e.g., Cu damascene interconnect) in the trench. An upper surface of the interlayer insulating layer is recessed to expose sidewalls of the electrical interconnect. An electrically insulating first capping pattern is formed on the recessed upper surface of the interlayer insulating layer and on the exposed sidewalls of the electrical interconnect, but is removed from an upper surface of the electrical interconnect. A metal diffusion barrier layer is formed on an upper surface of the electrical interconnect, however, the first capping pattern is used to block formation of the metal diffusion barrier layer on the sidewalls of the electrical interconnect. This metal diffusion barrier layer may be formed using an electroless plating technique.

Abstract: Methods of forming integrated circuit devices include forming an interlayer insulating layer having a trench therein, on a substrate and forming an electrical interconnect (e.g., Cu damascene interconnect) in the trench. An upper surface of the interlayer insulating layer is recessed to expose sidewalls of the electrical interconnect. An electrically insulating first capping pattern is formed on the recessed upper surface of the interlayer insulating layer and on the exposed sidewalls of the electrical interconnect, but is removed from an upper surface of the electrical interconnect. A metal diffusion barrier layer is formed on an upper surface of the electrical interconnect, however, the first capping pattern is used to block formation of the metal diffusion barrier layer on the sidewalls of the electrical interconnect. This metal diffusion barrier layer may be formed using an electroless plating technique.

Abstract: Provided is a home-bar door and a method of manufacturing the home-bar door. The home-bar door includes a first case, an insulating plate, and a second case. The first case forms a portion of an exterior of the home-bar door, and the insulating plate is disposed in the first case as a separate component. The second case is configured to be coupled to the first case to cover the insulating plate and form the exterior of the home-bar door. Therefore, since the first and second cases can be coupled to each other after disposing the insulating plate between the first and second cases, the home-bar door can be efficiently manufactured and have good quality.

Abstract: Disclosed is a monitoring TEG for an etching process in a semiconductor device. The TEG includes an etch stopping layer on a substrate and a target layer to be etched provided on the etch stopping layer. The target layer to be etched includes a first opening portion formed by etching a portion of the target layer to be etched and a second opening portion formed by etching another portion of the target layer to be etched. The second opening portion has a smaller depth than the first opening portion. A depth of a partial contact hole formed by a first partial etching process may be measured.

Abstract: Methods of forming integrated circuit devices include forming an interlayer insulating layer having a trench therein, on a substrate and forming an electrical interconnect (e.g., Cu damascene interconnect) in the trench. An upper surface of the interlayer insulating layer is recessed to expose sidewalls of the electrical interconnect. An electrically insulating first capping pattern is formed on the recessed upper surface of the interlayer insulating layer and on the exposed sidewalls of the electrical interconnect, but is removed from an upper surface of the electrical interconnect. A metal diffusion barrier layer is formed on an upper surface of the electrical interconnect, however, the first capping pattern is used to block formation of the metal diffusion barrier layer on the sidewalls of the electrical interconnect. This metal diffusion barrier layer may be formed using an electroless plating technique.

Abstract: A preamble acquisition apparatus includes a first PN code generation unit for generating a first PN code having a bit string, a first correlation calculation unit for correlating a received frequency domain preamble signal with the first PN code within a first correlation range to generate a first correlation value, a first correlation value comparison unit for comparing the first correlation value with a first threshold value, a second PN code generation unit for generating a second PN code, a second correlation calculation unit for correlating the received frequency domain preamble signal with the second PN code within a second correlation range to generate a second correlation value, and a preamble acquisition determination unit for comparing the second correlation value with a second threshold value to determine whether to acquire the preamble. The bit values of the first PN code are located in the second PN code.

Abstract: Methods of forming electrical interconnects include forming a copper pattern on a semiconductor substrate and then forming an electrically insulating capping layer on the copper pattern and an interlayer insulating layer on the electrically insulating capping layer. A contact hole is then formed, which extends through the interlayer insulating layer and the electrically insulating capping layer and exposes an upper surface of the copper pattern. An electroless plating step is then performed to form a copper pattern extension onto the exposed upper surface of the copper pattern. The copper pattern extension may have a thickness that is less than a thickness of the electrically insulating capping layer, which may be formed as a SiCN layer.

Abstract: Disclosed herein are a method and apparatus for acquiring a code group in an asynchronous Wideband Code Division Multiple Access (WCDMA) system. A primary synchronization channel search unit achieves primary synchronization channel slot timing synchronization. Then, the 1-1 search unit and 1-2 search unit of a secondary synchronization channel receive secondary synchronization channels from first and second antennas, respectively, start correlation operations between some of the slots of the received channels and code group candidates, and transmit information about candidates having values exceeding a predetermined threshold value to a determination unit. The determination unit transmits the received information about candidates to a second search unit of the secondary synchronization channel.

Abstract: A preamble acquisition apparatus includes a first PN code generation unit for generating a first PN code having a bit string, a first correlation calculation unit for correlating a received frequency domain preamble signal with the first PN code within a first correlation range to generate a first correlation value, a first correlation value comparison unit for comparing the first correlation value with a first threshold value, a second PN code generation unit for generating a second PN code, a second correlation calculation unit for correlating the received frequency domain preamble signal with the second PN code within a second correlation range to generate a second correlation value, and a preamble acquisition determination unit for comparing the second correlation value with a second threshold value to determine whether to acquire the preamble. The bit values of the first PN code are located in the second PN code.

Abstract: An apparatus for adjusting the level of a refrigerator includes: a main body; a guide groove formed to be level in a forward/backward direction of the main body; a movement unit inserted in the guide groove and moving in the direction in which the main body is inclined; a contact point part formed at one of both ends of the guide groove and selectively connected to the movement unit; and a notifying unit informing about whether or not the contact point part is connected. When the refrigerator is installed, an installation technician can recognize whether or not the refrigerator is installed to be level regardless of a skilled degree of the installation technician, so the installation time can be shortened and a service satisfaction of consumers can be increased.

Abstract: Methods of forming a contact pad include forming a copper pattern on a semiconductor substrate and forming a passivation layer on the copper pattern. The passivation layer is defined to have an opening therein that exposes at least a portion of an upper surface of the copper pattern. A diffusion barrier layer is formed in the opening by electroless plating the diffusion barrier layer onto the exposed portion of the upper surface of the copper pattern. This diffusion barrier layer operates as a barrier to copper out-diffusion from the copper pattern. These methods further include conformally depositing an underbump metallization layer onto at least a sidewall of the opening in the passivation layer and onto an upper surface of the diffusion barrier layer. A step is then performed to plate a contact bump (e.g., solder bump) onto a portion of the underbump metallization layer extending opposite the diffusion barrier layer.

Abstract: Methods of forming electrical interconnects include forming a copper pattern on a semiconductor substrate and then forming an electrically insulating capping layer on the copper pattern and an interlayer insulating layer on the electrically insulating capping layer. A contact hole is then formed, which extends through the interlayer insulating layer and the electrically insulating capping layer and exposes an upper surface of the copper pattern. An electroless plating step is then performed to form a copper pattern extension onto the exposed upper surface of the copper pattern. The copper pattern extension may have a thickness that is less than a thickness of the electrically insulating capping layer, which may be formed as a SiCN layer.

Abstract: Provided are an apparatus and a method for acquiring a code group that is used for a mobile communication terminal to acquire a scrambling code for identification of a base station. The present invention compares a part of slot values in code groups of the secondary synchronization channel transmitted to a mobile communication terminal from a base station with a part of code groups already known and, when there is a code group having a value higher than a predetermined value, reads code groups having the same pattern as that of the code group having a value higher than the predetermined value, which are previously stored in a predetermined storage. Then, the present invention excludes the read code groups from operations to reduce the quantity of unnecessary operations.

Abstract: A wireless broadband Internet (WiBro) terminal and a method of determining a sleep mode of a WiBro terminal, which can measure a strength of a preamble signal and determine an effective sleep interval are provided. A WiBro terminal, which can measure a strength of a preamble signal in the listening mode during an L frame after operating in a sleep mode during an N1 frame, and operate in a sleep mode during either an N1 or 2*N1 frames, or perform a normal operation when MOB_TRF_IND is positive, resulting from the comparing the strength with a threshold value, is provided.

Abstract: Provided is a home-bar door and a method of manufacturing the home-bar door. The home-bar door includes a first case, an insulating plate, and a second case. The first case forms a portion of an exterior of the home-bar door, and the insulating plate is disposed in the first case as a separate component. The second case is configured to be coupled to the first case to cover the insulating plate and form the exterior of the home-bar door. Therefore, since the first and second cases can be coupled to each other after disposing the insulating plate between the first and second cases, the home-bar door can be efficiently manufactured and have good quality.

Abstract: A socket for testing a semiconductor package comprises two or more rubbers. Each rubber includes a chip-package contact portion configured to electrically connect with a chip package placed on the rubber and electrical wirings configured to electrically connect with the chip-package contact portion and having external contact ends configured to electrically connect with external electrical connections. The socket also comprises two or more guides configured to receive the chip package therein, the two or more guides including electrical wirings having external contact ends that are configured to be electrically connected with external electrical connections and a socket frame configured to hold the two or more rubbers and the two or more guides, wherein the rubbers correspond in number to the guides, and the rubbers and the guides are alternately stacked so that one rubber is located at a lowermost portion in a holding space of the socket frame.