Abstract: A method for defining plural windows with different etching depths simultaneously is disclosed. The method includes steps of (a) forming a photoresist on a substrate having a multiple film structure thereon, (b) exposing a first region of the photoresist to a first exposure dose and a second region of the photoresist to a second exposure dose, (c) obtaining different remaining thickenesses of the photoresist on the first region and the second region by a development, and (d) etching the first region and the second region of the photoresist for forming the plural windows with different etching depths of the multiple film structure.

Abstract: In a novel dot inversion mode liquid crystal display, the period of time required to write a pixel electrode is shortened. The liquid crystal display consists of a plurality of pixel cells arranged in a form of matrix. Each of the pixel cells comprises: a pixel electrode for controlling the motion of liquid crystal molecules, a pre-writing transistor, activated by a first scan line, for in advance writing the data signal on a first data line into the pixel electrode, and a main transistor, activated by a second scan line, for writing the data signal in a second data line into the pixel electrode. According to the present invention, the pixel electrode in the liquid crystal display undergoes two separate operations of writing potential voltages with the same polarity per frame of time. Therefore, it is easy to completely write the data signal into the pixel electrode, even when the liquid crystal display becomes higher in the scanning frequency or larger in the resolution degree of the panel.

Abstract: A method for defining plural windows with different etching depths simultaneously is disclosed. The method includes steps of (a) forming a photoresist on a substrate having a multiple film structure thereon, (b) exposing a first region of the photoresist to a first exposure dose and a second region of the photoresist to a second exposure dose, (c) obtaining different remaining thickenesses of the photoresist on the first region and the second region by a development, and (d) etching the first region and the second region of the photoresist for forming the plural windows with different etching depths of the multiple film structure.