Abstract: According to one embodiment, a method of manufacturing a semiconductor device using a semiconductor manufacturing apparatus, includes: forming a surface layer on a recess portion of a processing target object, by supplying a first gas onto the processing target object while cooling the processing target object and without applying a high-frequency voltage to a processing chamber of the semiconductor manufacturing apparatus, wherein the first gas contains no halogens; and etching the processing target object by supplying a second gas onto the processing target object while applying the high-frequency voltage to the processing chamber, wherein the second gas contains a halogen.

Abstract: A display module, including a display panel, a protective cover, and a camera module, is provided. The display panel includes a through-hole region provided with a through-hole, and a non-through-hole region. The protective cover is disposed on a light-emitting side of the display panel, and the camera module is disposed on a side facing away from the light-emitting side of the display panel. A lens of the camera module is disposed corresponding to the through-hole, a side of the protective cover close the display panel has an arc-shaped concave surface, and the arc-shaped concave surface is disposed corresponding to the through-hole.

Abstract: A method and a device for preparing a trivalent chromium salt by electrochemical oxidation of ferrochrome in an acidic system are provided. The method includes: putting ferrochrome as an anode and placing the anode into an acidic electrolyte together with a cathode, and then turning on a power supply for electrolysis reaction, until an electrolysis completion solution containing the trivalent chromium salt and a trivalent iron salt is directly prepared. Compared with the prior art, the one-step electrochemical synthesis of the trivalent chromium salt solution can be achieved without a hexavalent chromium salt stage, avoiding the generation of chromium-containing waste residue, shortening the process flow and significantly improving the production efficiency of the trivalent chromium salt; furthermore, the reaction can be carried out at room temperature and normal pressure without the use of fine chromium iron powders and a high-concentration acidic electrolyte.

Abstract: A method for directly preparing a trivalent chromium compound by electrochemical oxidation of ferrochrome is provided. The method includes: putting ferrochrome as an anode, and placing the anode into an electrolyte solution containing a complexing agent together with a cathode, then turning on a power supply for electrolysis reaction so that chromium and iron in ferrochrome are directly converted into free Cr3+ and Fe3+ respectively, allowing one of Cr3+ and fe3+ to form a stable soluble metal complex together with the complexing agent, and allowing the other of Cr3+ and Fe3+ to form a metal hydroxide solid together with OH? generated by electrolysis reaction, so as to obtain an electrolysis completion slurry. Compared with the prior art, the present application has no hexavalent chromium salt stage, thereby shortening the process flow and avoiding the generation of chromium-containing waste residue.

Abstract: A method for directly preparing a trivalent chromium compound by electrochemical oxidation of ferrochrome is provided. The method includes: putting ferrochrome as an anode, and placing the anode into an electrolyte solution containing a complexing agent together with a cathode, then turning on a power supply for electrolysis reaction so that chromium and iron in ferrochrome are directly converted into free Cr3+ and Fe3+ respectively, allowing one of Cr3+ and fe3+ to form a stable soluble metal complex together with the complexing agent, and allowing the other of Cr3+ and Fe3+ to form a metal hydroxide solid together with OH? generated by electrolysis reaction, so as to obtain an electrolysis completion slurry. Compared with the prior art, the present application has no hexavalent chromium salt stage, thereby shortening the process flow and avoiding the generation of chromium-containing waste residue.

Abstract: A method and a device for preparing a trivalent chromium salt by electrochemical oxidation of ferrochrome in an acidic system are provided. The method includes: putting ferrochrome as an anode and placing the anode into an acidic electrolyte together with a cathode, and then turning on a power supply for electrolysis reaction, until an electrolysis completion solution containing the trivalent chromium salt and a trivalent iron salt is directly prepared. Compared with the prior art, the one-step electrochemical synthesis of the trivalent chromium salt solution can be achieved without a hexavalent chromium salt stage, avoiding the generation of chromium-containing waste residue, shortening the process flow and significantly improving the production efficiency of the trivalent chromium salt; furthermore, the reaction can be carried out at room temperature and normal pressure without the use of fine chromium iron powders and a high-concentration acidic electrolyte.

Abstract: A semiconductor device manufacturing apparatus according to an embodiment includes: a chamber; a holder provided in the chamber and capable of adsorbing a substrate, the holder including a recess on a surface, a first hole provided in the recess, and a second hole provided in the recess; a first gas passage connected to the first hole; a second gas passage connected to the second hole; a first valve provided in the first gas passage; a second valve provided in the second gas passage; a first gas supply pipe for supplying a first gas to the recess; and a gas discharge pipe for discharging a gas from the recess. The first gas passage and the second gas passage are connected to the first gas supply pipe, or the first gas passage and the second gas passage are connected to the gas discharge pipe.

Abstract: A semiconductor device manufacturing apparatus according to an embodiment includes: a chamber; a holder provided in the chamber and capable of adsorbing a substrate, the holder including a recess on a surface, a first hole provided in the recess, and a second hole provided in the recess; a first gas passage connected to the first hole; a second gas passage connected to the second hole; a first valve provided in the first gas passage; a second valve provided in the second gas passage; a first gas supply pipe for supplying a first gas to the recess; and a gas discharge pipe for discharging a gas from the recess. The first gas passage and the second gas passage are connected to the first gas supply pipe, or the first gas passage and the second gas passage are connected to the gas discharge pipe.

Abstract: The invention relates to a planting method of DendrobiumnobileLindl, it comprises the following steps: Selecting betel palm trees that are more than 5 years old or or more than 6 meters high; Selecting the DendrobiumnobileLindl seedlings with a height of more than 12 cm, with 1 or 2 new buds and complete roots, stems and leaves, and dividing DendrobiumnobileLindl seedlings into 2-4 clumps a group; Combing and aligning the roots of each group of DendrobiumnobileLindlseedlings, taking one group of DendrobiumnobileLindl seedlings and sticking them to the knot of the betel plain tree each time, then using a cotton rope or a tie to wind and fix the DendrobiumnobileLindl seedlings on the betel palm tree trunk from the stems of each group of DendrobiumnobileLindl seedlings; Putting the roots below the stembase of the DendrobiumnobileLindlseedling on the betel palm tree trunk and smearingdendrobium nutrient.

Abstract: The application discloses a method for replacing seedbed culture substrate and a conveyor belt seedbed, the flatbed truck is used to receive the dropped culture substrate at the end of the conveyor belt that has been driven all the time, without manual removal by workers. The conveyor belt continues to drive until the flatbed truck is fully loaded or only when the culture substrate on the conveyor belt is emptied, only need to place the flatbed truck full of culture substrate at the head end of the conveyor belt when placing new culture substrate, and turn on the conveyor belt, which speeds up the efficiency of replacing the culture substrate, and this method only requires one person can complete the replacement of the culture substrate on the seedbed, which solves the technical problem that the existing method of replacing the culture substrate is to manually remove the culture substrate on the seedbed, which leads to the long time for replacing the culture substrate and low work efficiency.

Abstract: The invention relates to an electric seedling greenhouse, The illumination intensity in the seedling greenhouse is detected by the illumination transmitter, the light intensity information in the seedling greenhouse is transmitted to the information processing module, the light intensity preset value required by plants is set in the information processing module, the shading rate of the first sunshade device is not equal to the shading rate of the second sunshade device, when the light intensity is higher than the preset value, the light intensity collected by the illuminance transmitter is transmitted to the information processing module, and it is judged to meet the value of starting sunshade device, then analyze the light intensity to automatically select the corresponding shading rate of the sunshade device to open and complete the shading.

Abstract: A processing method of Dendrobium organic fertilizer, which comprises the following steps: Step 1: select 4-6 parts by weight of rotten animal dung; Step 2: add 0.5-1.5 parts by weight of disinfectant to animal dung; Step 3: add disinfectant to dung and let it stand for 1-3 hours; Step 4. uniformly mixing to obtain organic fertilizer. The invention controls the viscosity of animal dung within a range, thereby improving the adhesion between animal dung and Dendrobium, slowing down the drying and hardening speed of animal dung, moisturizing the roots, sterilizing animal dung and reducing the probability of affecting the growth of Dendrobium.

Abstract: This application provides a dendrobium watering method and system, by way of imitation of wild cultivation of dendrobium on volcano, first on the volcano cant selection from the top 15 to 25 cm line code position, use a hard masonry nail line code insert to spray rod fixed to the fixed position of the line of code. The ground lance G-shaped nozzle is higher than the top of the volcano.

Abstract: A display module, including a display panel, a protective cover, and a camera module, is provided. The display panel includes a through-hole region provided with a through-hole, and a non-through-hole region. The protective cover is disposed on a light-emitting side of the display panel, and the camera module is disposed on a side facing away from the light-emitting side of the display panel. A lens of the camera module is disposed corresponding to the through-hole, a side of the protective cover close the display panel has an arc-shaped concave surface, and the arc-shaped concave surface is disposed corresponding to the through-hole.

Abstract: The present invention discloses a backplate and a display panel. The backplate includes a substrate layer. Material of the substrate layer includes a doped material. The doped material includes thermally conductive particles.

Abstract: A method for manufacturing a semiconductor device according to an embodiment is a method for manufacturing a semiconductor device including performing a first etching process of forming a recess in a layer to be processed formed on a substrate by reactive ion etching using a first gas, performing a first process of supplying hydrogen radicals to the recess by using a second gas containing hydrogen in a state where a temperature of the substrate is equal to or more than 200° C. and equal to or less than 350° C. after the first etching process, and performing a second etching process of etching a bottom surface of the recess by reactive ion etching using a third gas after the first process.

Abstract: A semiconductor device manufacturing apparatus according to an embodiment includes: a chamber; a holder provided in the chamber and capable of adsorbing a substrate, the holder including a recess on a surface, a first hole provided in the recess, and a second hole provided in the recess; a first gas passage connected to the first hole; a second gas passage connected to the second hole; a first valve provided in the first gas passage; a second valve provided in the second gas passage; a first gas supply pipe for supplying a first gas to the recess; and a gas discharge pipe for discharging a gas from the recess. The first gas passage and the second gas passage are connected to the first gas supply pipe, or the first gas passage and the second gas passage are connected to the gas discharge pipe.

Abstract: A method of recovering organic components from an aqueous biomass in the method includes: (i) providing an aqueous biomass containing organic components; (ii) treatment of the aqueous biomass to release intracellular organic components from within cells of the biomass to form a biomass suspension; addition of a water-immiscible component to the biomass suspension to form a mixture comprising biomass and water-immiscible component; (iv) subjecting the mixture comprising biomass and water-immiscible component to high shear to form a water-in-water-immiscible-component emulsion; and (v) separating the water-immiscible component phase from the water/aqueous phase.

Abstract: The present disclosure discloses a method for analyzing dynamic response and dynamic impedance of pile groups and a system therefor. The influence of wave load on pile groups is taken into account to study the dynamic stability of pile groups, the foundation reaction force is calculated by using an improved Vlasov foundation model, the dynamic stability equation of active piles and passive piles is established by combining an interaction factor method and a matrix transfer method, the dynamic interaction factor between adjacent piles and impedance of pile groups are obtained, and the stability of pile groups is analyzed by parameters. Through research, it is found that the existence of wave load makes the dynamic response of pile groups increase obviously; the dynamic impedance and the interaction factor of pile groups are mainly affected by soil parameters, but the existence of wave load will affect some soil parameters.