Abstract: Various embodiments of the present disclosure provide methods and apparatuses for session service management. A method performed by a first session management function comprises determining first N4 information related to a user plane function (UPF). The first N4 information comprises an identifier of the UPF. The method further comprises sending a first message comprising the first N4 information to a second session management function.

Abstract: Provided are a pixel driving circuit, a method for driving the pixel driving circuit, a silicon-based display panel and a display device. The pixel driving circuit is used for driving a light-emitting element to emit light. At an initial stage, a reset circuit provides a reset signal to a third node; a light emission control transistor is in a first on state to transmit the reset signal to a second node; a threshold compensation circuit transmits the reset signal to a first node; and a data write circuit transmits a non-enable level Vofs of a data signal to a second terminal of a first capacitor. At a threshold compensation stage, the threshold compensation circuit provides a threshold voltage of a drive transistor to the first node for compensation.

Abstract: A semiconductor structure includes at least one sub-word line driver. The sub-word line driver includes a plurality of first active areas and a main-word line. The main-word line includes a plurality of first gates and a plurality of second gates interconnected. The plurality of first gates correspond to the plurality of first active areas. An extension direction of the plurality of first gates in the main-word line and/or an extension direction of at least part of the second gates in the main-word line intersects both a first direction and a second direction. The first direction is parallel to a direction in which the first active areas extend, and the second direction is parallel to a plane in which the first active areas are located and is perpendicular to the first direction.

Abstract: A polyurethane insulation foam composition is disclosed herein. The polyurethane insulation foam comprises: (i) an aromatic isocyanate compound; (ii) an isocyanate reactive compound; (iii) water; (iv) a tertiary amine compound; (v) a hydrophilic carboxylic acid compound; (vi) a halogenated olefin compound; (vii) a stabilizing compound, and (vii) optionally, other additives.

Abstract: A method of fabrication of a multi-gate semiconductor device that includes providing a fin having a plurality of a first type of epitaxial layers and a plurality of a second type of epitaxial layers. The plurality of the second type of epitaxial layers is oxidized in the source/drain region. A first portion of a first layer of the second type of epitaxial layers is removed in a channel region of the fin to form an opening between a first layer of the first type of epitaxial layer and a second layer of the first type of epitaxial layer. A portion of a gate structure is then formed in the opening.

Abstract: Selective privileged container augmentation is provided. A target group of edge devices is selected from a plurality of edge devices to run a plurality of child tasks comprising a pending task by mapping edge device tag attributes of the plurality of edge devices to child task tag attributes of the plurality of child tasks. A privileged container corresponding to the pending task is installed in each edge device of the target group to monitor execution of a child task by a given edge device of the target group. A privileged container installation tag that corresponds to the privileged container is added to an edge device tag attribute of each edge device of the target group having the privileged container installed. A child task of the plurality of child tasks comprising the pending task is sent to a selected edge device in the target group to run the child task.

Abstract: A method and apparatus for wafer bonding. The method includes that, a first position parameter of a first alignment mark on a first wafer is determined by using a optical beam; a second position parameter of a second alignment mark on a second wafer is determined with the optical beam, the optical beam has a property of transmitting through a wafer; a relative position between the first wafer and the second wafer is adjusted with the optical beam according to the first position parameter and the second position parameter until the relative position between the first alignment mark and the second alignment mark satisfies a predetermined bonding condition; and the first wafer is bonded to the second wafer.

Abstract: A computer-implemented process is disclosed. An application is loaded into a local address space. A request by the application to load a target shared library is intercepted by an interceptor. Using the interceptor and based upon the request being intercepted, a shared library correlation table is searched for a loading count and a loading policy associated with the target shared library. Based upon the loading count and the loading policy, a selection is made between loading the target shared library as a shared library container, and loading the target shared library into the local address space. The target shared library is loaded based upon the selecting. The loading count represents a number of times the target shared library was loaded, and the loading policy indicates how the target shared library is to be loaded.

Abstract: A method includes forming a semiconductor substrate having an oxide layer embedded therein, forming a multi-layer (ML) stack including alternating channel layers and non-channel layers over the semiconductor substrate, forming a dummy gate stack over the ML, forming an S/D recess in the ML to expose the oxide layer, forming an epitaxial S/D feature in the S/D recess, removing the non-channel layers from the ML to form openings between the channel layers, where the openings are formed adjacent to the epitaxial S/D feature, and forming a high-k metal gate stack (HKMG) in the openings between the channel layers and in place of the dummy gate stack.

Abstract: The present disclosure provides an arctigenin liquid nano-preparation and a preparation method thereof, and relates to the technical field of pharmaceutical preparation. In the present disclosure, arctigenin is prepared into a liquid nano-preparation, having advantages of distribution of a droplet diameter on nanoscale, significantly increased specific surface area, rapid absorption, and high bioavailability. Meanwhile, nano-preparation entered the body can be captured by wandering leucocytes, and a medicament is delivered to inflammatory lesions through chemiotaxis, thereby conferring a targeted drug delivery feature on the arctigenin and making a therapy more targeted. Moreover, in the present disclosure, the arctigenin is dissolved in an oil phase, and the oil phase is dissolved in water by emulsification to further make the arctigenin dissolve in the water and increase water solubility of the arctigenin.

Abstract: Method, device and computer program product for wireless communication are provided. A method includes: receiving, by a wireless communication terminal, a first release message; and releasing, by the wireless communication terminal, at least one small data transmission, SDT, configuration stored in the wireless communication terminal according to a cell where the first release message is received or according to information of SDT configuration carried by the first release message.

Abstract: Aspects of the disclosure relate to wireless communication apparatuses, methods, and other aspects of sliding intermediate frequency filters for carrier aggregation communications. One aspect a high band mixer including a radio frequency (RF) receive signal input, a local oscillator (LO) input, and an IF signal output, a tunable high pass filter including an input and an output, an intermediate frequency (IF) received signal multiplexer including a merged IF CA signal output, a first input, and a second input, an LO input, and an IF signal output, where the RF receive signal input is coupled to the low band mmW CA receive port, and a tunable low pass filter including an input and an output, where the input is coupled to the IF signal output of the low band mixer, and where the output is coupled to the second input of the IF received signal multiplexer.

Abstract: Aspects described herein include devices and methods with chain routing of signals for massive antenna arrays. In some aspects, an apparatus is provided that includes a first millimeter wave (mmW) transceiver having a first port, a second port, one or more antenna elements, a plurality of chain mmW transceiver ports, and switching circuitry. The switching circuitry is controllable by control data to route portions of a merged clock and data signal and a merged control and data signal between a first route between the one or more antenna elements and the first port and a second route between the one or more antenna elements and the second port and a third route between the first port and the plurality of chain mmW transceiver ports and a fourth route between the second port and the plurality of chain mmW transceiver ports.

Abstract: A method includes, in response to receiving an incoming service request and establishing a call chain of pods of a service mesh network, setting a retry locker parameter to a locked state for each pod in the call chain. A locked retry locker parameter prevents the pod from initiating retries of a service request. The method includes, in response to determining that a pod in the call chain is unavailable, setting the retry locker parameter to an unlocked state for a previous pod just prior to the pod that is unavailable. The unlocked state allows a retry to the pod that is unavailable. In response to the previous pod reaching a retry limit, the method includes setting the retry locker parameter to unlocked for each pod in the call chain and sending a service termination message to a service requester.

Abstract: A method including providing a device including a gate structure and a source/drain feature adjacent to the gate structure. An insulating layer (e.g., CESL, ILD) is formed over the source/drain feature. A trench is etched in the insulating layer to expose a surface of the source/drain feature. A semiconductor material is then formed in the etched trench on the surface of the source/drain feature. The semiconductor material is converted to a silicide.

Abstract: A semiconductor device structure includes a fin structure formed over a substrate. The structure also includes nanostructures formed over the fin structure. The structure also includes a gate structure wrapped around the nanostructures. The structure also includes a first inner spacer formed beside the gate structure. The structure also includes a second inner spacer formed beside the first inner spacer. The structure also includes spacer layers formed over opposite sides of the gate structure above the nanostructures. The structure also includes source/drain epitaxial structures formed over opposite sides of the fin structure. The second inner spacer is partially embedded in the source/drain epitaxial structures.

Abstract: A method that includes collecting, by a computer, social network posts by social network friends of a user containing images. The method further includes identifying, by the computer, images within the social network posts containing the user through facial image recognition based on an image of the user in a user social network profile and determining, by the computer, information from the identified images containing the user within the social network posts for inclusion in the user social network profile. The method may further include updating, by the computer, the profile information of the user social network profile to include the information from the identified images containing the user within the social network posts.

Abstract: Methods and systems for techniques for updating user equipment capability information are disclosed. In an implementation, a method of wireless communication includes receiving, by a wireless device, a capability enquiry message from a first network in a first communication connection with a first subscriber identity module of the wireless device, transmitting, by the wireless device, to the first network, a first capability information message indicating a radio access capability between the wireless device and the first network, and initiating, by the wireless device, a procedure for updating the radio access capability between the wireless device and the first network.

Abstract: Methods and systems for techniques for updating user equipment capability information are disclosed. In an implementation, a method of wireless communication includes transmitting, by a wireless device, to a first network in a first communication connection with the wireless device, a user equipment assistance information message to update a radio access capability between the wireless device and the first network due to detecting a change in the radio access capability between the wireless device and the first network based on an establishment of a second communication connection between the wireless device and a second network; or based on a determination by the wireless device to update the radio access capability between the wireless device and the first network.

Abstract: A time-of-flight sensor includes a substrate, a single photon avalanche detection chip, a vertical cavity surface-emitting laser, a first narrowband pass filter glass, and a second narrowband pass filter glass and a resin shell. The single photon avalanche detection chip is attached on the substrate, and the vertical cavity surface-emitting laser is also attached on the substrate. The first narrowband pass filter glass is arranged above the single photon avalanche detection chip, and the second narrowband pass filter glass is arranged above the vertical cavity surface-emitting laser. The resin shell covers the first narrowband pass filter glass and the second narrowband pass filter glass, and an upper surface of the first narrowband pass filter glass and an upper surface of the second narrowband pass filter glass are coplanar with an upper surface of the resin shell.