Patents by Inventor Xi Wei

Xi Wei has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 10428654
    Abstract: A cutter head has a front surface formed with several transmitting ports, a protection plate mounted at an external-end hole of each port, several microwave generating mechanisms distributed in two manners: first, the generating mechanisms are uniformly arranged in the cutter head; second, the microwave generating mechanisms in the same number as hobbing cutters. Each generating mechanism includes a microwave source, a magnetron, a rectangular waveguide, a circulator and a microwave focus radiator, wherein the microwave source is connected with the magnetron, the magnetron is connected with one end of the waveguide, the other end of the waveguide is connected with a first port of the circulator, a second port of the circulator is connected with the microwave focus radiator, and a water load is connected to a third port of the circulator. The focus radiator includes a standard waveguide section, an impedance matching section and a compressed radiation section.
    Type: Grant
    Filed: June 9, 2017
    Date of Patent: October 1, 2019
    Assignee: NORTHEASTERN UNIVERSITY
    Inventors: Xia Ting Feng, Gao Ming Lu, Yuan Hui Li, Xi Wei Zhang
  • Patent number: 10388529
    Abstract: A method for preparing a substrate with an insulating buried layer includes: providing a substrate, the substrate having a supporting layer and an insulating layer arranged on a surface of the supporting layer; performing first ion implantation, implanting modified ions into the substrate, wherein a distance from an interface between the insulating layer and the supporting layer to a Gaussian distribution peak of modified ion concentration is less than 50 nm, such that the modified ions form a nano cluster in the insulating layer; and performing a second ion implantation, continuing to implant the modified ions into the insulating layer, wherein the ions are implanted in the same way as the first ion implantation, and a distance from a Gaussian distribution peak of modified ion concentration in this step to the Gaussian distribution peak of modified ion concentration in the first ion implantation is less than 80 nm.
    Type: Grant
    Filed: February 26, 2018
    Date of Patent: August 20, 2019
    Assignee: SHANGHAI SIMGUI TECHNOLOGY CO., LTD.
    Inventors: Xing Wei, Yongwei Chang, Meng Chen, Guoxing Chen, Lu Fei, Xi Wang
  • Publication number: 20190252245
    Abstract: An embodiment method includes patterning an opening through a dielectric layer, depositing an adhesion layer along sidewalls and a bottom surface of the opening, depositing a first mask layer in the opening over the adhesion layer, etching back the first mask layer below a top surface of the dielectric layer, and widening an upper portion of the opening after etching back the first mask layer. The first mask layer masks a bottom portion of the opening while widening the upper portion of the opening. The method further includes removing the first mask layer after widening the upper portion of the opening and after removing the first mask layer, forming a contact in the opening by depositing a conductive material in the opening over the adhesion layer.
    Type: Application
    Filed: April 22, 2019
    Publication date: August 15, 2019
    Inventors: Xi-Zong Chen, Y.H. Kuo, Cha-Hsin Chao, Yi-Wei Chiu, Li-Te Hsu
  • Publication number: 20190244849
    Abstract: Etch uniformity is improved by providing a thermal pad between an insert ring and electrostatic chuck in an etching chamber. The thermal pad provides a continuous passive heat path to dissipate heat from the insert ring and wafer edge to the electrostatic chuck. The thermal pad helps to keep the temperature of the various components in contact with or near the wafer at a more consistent temperature. Because temperature may affect etch rate, such as with etching hard masks over dummy gate formations, a more consistent etch rate is attained. The thermal pad also provides for etch rate uniformity across the whole wafer and not just at the edge. The thermal pad may be used in an etch process to perform gate replacement by removing hard mask layer(s) over a dummy gate electrode.
    Type: Application
    Filed: February 4, 2019
    Publication date: August 8, 2019
    Inventors: Chin-Huei Chiu, Tsung Fan Yin, Chen-Yi Liu, Hua-Li Hung, Xi-Zong Chen, Yi-Wei Chiu
  • Patent number: 10365193
    Abstract: An apparatus and method for determining time-dependence failure under constant temperature through high pressure true triaxial loading for hard rock, includes a pressure chamber and four actuators, wherein a sample bearing platform is arranged in a center of the pressure chamber, a sample bearing and containing chamber is arranged in a center of the sample bearing platform, and a confining pressure loading oil supply hole is formed in the sample bearing platform, and communicates with a confining pressure loading injection pump; each actuator includes a sealing cover, an annular end cover, a counter-force cylinder barrel, a piston, a piston rod, a sealing flange and a stress loading injection pump; a heating coil is arranged in the pressure chamber; a force sensor is fixedly mounted at the end part of the piston rod; and a pressure sensor is mounted in the sample bearing platform.
    Type: Grant
    Filed: January 17, 2017
    Date of Patent: July 30, 2019
    Assignee: NORTHEASTERN UNIVERSITY
    Inventors: Xia ting Feng, Xi wei Zhang, Cheng xiang Yang, Shuai Peng, Jun Tian, Rui Kong, Dong hui Ma
  • Patent number: 10361114
    Abstract: The present disclosure provides a method for preparing a substrate with a carrier trapping center. The method includes: implanting bubbling ions into the semiconductor substrate to form a splitting layer, and implanting modified ions into the insulating layer to form a nano cluster; providing a supporting substrate; bonding the supporting substrate to the semiconductor substrate by using the insulating layer as an intermediate layer; performing a first heat treatment for the bonded substrate such that a splitting layer is formed at the position where the bubbling ions are implanted, and causing the semiconductor substrate to split at the position of the splitting layer; performing rapid thermal annealing for the substrate; and performing a second heat treatment for the rapidly thermally annealed semiconductor substrate to consolidate the bonding interface and form the nano cluster at the position where the modified ions are implanted.
    Type: Grant
    Filed: February 26, 2018
    Date of Patent: July 23, 2019
    Assignee: SHANGHAI SIMGUI TECHNOLOGY CO., LTD.
    Inventors: Xing Wei, Yongwei Chang, Meng Chen, Guoxing Chen, Lu Fei, Xi Wang
  • Patent number: 10324014
    Abstract: A high-pressure true triaxial test apparatus with capacity of low-frequency disturbance and high-speed impact includes static and dynamic loading frames, four static loading actuators, two dynamic loading actuators and an SHPB mechanism, wherein all actuators are connected with a hydraulic station system; a hollow way is formed in the axial center of each piston shaft of the dynamic loading actuators, a dynamic pressure sensor adopting a hollow ring structure is mounted at the end part of each piston shaft, and the SHPB mechanism applies a high-speed impact load on a rock sample through the dynamic pressure sensors respectively; and the dynamic loading actuators adopt a static pressure oilway balance support sealing manner and are connected with the hydraulic station system, each oilway is provided with an energy accumulator, and flow is increased by the servo valves to drive pistons to perform dynamic response.
    Type: Grant
    Filed: March 28, 2017
    Date of Patent: June 18, 2019
    Assignee: NORTHEASTERN UNIVERSITY
    Inventors: Xia ting Feng, Xi wei Zhang, Rui Kong, Cheng xiang Yang, Dong hui Ma, Shuai Peng, Lei Shi, Zhi bin Yao, Jun Tian
  • Publication number: 20190178133
    Abstract: A method includes determining whether a urea refill event is detected, and clearing a quality accumulator value and clearing a latching abort command. The method includes determining whether urea fluid quality check abort conditions are met, and clearing the urea quality accumulator, latching the abort command, and exiting the reductant fluid quality check. In response to the abort conditions not being met, incrementing the urea quality accumulator according to an amount of urea being injected, and comparing the accumulated urea quantity to a low test threshold. The method includes, in response to the accumulated urea quantity being greater than the low test threshold, comparing the accumulated urea quantity to a high test threshold, and in response to the urea quantity being greater than the high test threshold, determining whether the a NOx exceedance is observed and clearing a urea quality error in response to the NOx exceedance not being observed.
    Type: Application
    Filed: February 4, 2019
    Publication date: June 13, 2019
    Inventors: Xi Wei, David Samuel Everard, Baohua Qi, Mickey R. McDaniel, Edmund P. Hodzen, Guoquian Li
  • Patent number: 10311200
    Abstract: Roughly described, a method for developing a set of design rules for a fabrication process in development includes, for each of several candidate DRUTs for the fabrication process, laying our a logic cell based on the DRUT, the logic cell having at least one transistor and at least one interconnect, simulating fabrication of the logic cell according to the fabrication process and the layout, simulating behavior of the logic cell structure, including characterizing the combined behavior of both the first transistor and the first interconnect, evaluating performance of the logic cell structure in dependence upon the behavior as characterized, and recording in a database, in association with an indication of the DRUT, values indicating performance of the logic cell. The database can be used to select the best DRUT for the fabrication process.
    Type: Grant
    Filed: August 3, 2016
    Date of Patent: June 4, 2019
    Assignee: Synopsys, Inc.
    Inventors: Victor Moroz, Karim El Sayed, Terry Sylvan Kam-Chiu Ma, Xi-Wei Lin, Qiang Lu
  • Publication number: 20190164816
    Abstract: A method for forming a semiconductor device structure is provided. The method includes forming a first layer over a second layer. The method includes forming a first recess and a second recess in the first layer. The first recess is narrower than the second recess. The method includes forming a first covering layer in the first recess and the second recess. The first covering layer in the first recess is thinner than the first covering layer in the second recess. The method includes removing the first covering layer in the first recess and the first covering layer covering the first bottom surface to form a first opening in the first covering layer in the second recess. The method includes removing the first portion and the second portion through the first recess and the first opening.
    Type: Application
    Filed: August 17, 2018
    Publication date: May 30, 2019
    Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Xi-Zong CHEN, Chih-Hsuan LIN, Cha-Hsin CHAO, Yi-Wei CHIU, Li-Te HSU
  • Patent number: 10306465
    Abstract: Managing data security on a mobile device. Data associated with a mobile device is received; the data includes an identification (ID) of the mobile device and a location of the mobile device relative to one or more location sensor devices. A path is determined, relative to the one or more location sensor devices, through which the mobile device has traveled. An electronic security key is communicated to the mobile device based on determining that the path corresponds to a defined path associated with the mobile device.
    Type: Grant
    Filed: July 18, 2017
    Date of Patent: May 28, 2019
    Assignee: International Business Machines Corporation
    Inventors: Ye Chen, Ruomeng Hao, Ting Jiang, Ning Wang, Shu Xi Wei, Youmiao Zhang
  • Publication number: 20190146336
    Abstract: The present disclosure describes a method for improving post-photolithography critical dimension (CD) uniformity for features printed on a photoresist. A layer can be formed on one or more printed features and subsequently etched to improve overall CD uniformity across the features. For example the method includes a material layer disposed over a substrate and a photoresist over the material layer. The photoresist is patterned to form a first feature with a first critical dimension (CD) and a second feature with a second CD that is larger than the first CD. Further, a layer is formed with one or more deposition/etch cycles in the second feature to form a modified second CD that is nominally equal to the first CD.
    Type: Application
    Filed: August 10, 2018
    Publication date: May 16, 2019
    Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: XI-ZONG CHEN, Cha-Hsin CHAO, Yi-Wei CHIU, Li-Te HSU, Chih-Hsuan LIN
  • Publication number: 20190040741
    Abstract: A cutter head has a front surface formed with several transmitting ports, a protection plate mounted at an external-end hole of each port, several microwave generating mechanisms distributed in two manners: first, the generating mechanisms are uniformly arranged in the cutter head; second, the microwave generating mechanisms in the same number as hobbing cutters. Each generating mechanism includes a microwave source, a magnetron, a rectangular waveguide, a circulator and a microwave focus radiator, wherein the microwave source is connected with the magnetron, the magnetron is connected with one end of the waveguide, the other end of the waveguide is connected with a first port of the circulator, a second port of the circulator is connected with the microwave focus radiator, and a water load is connected to a third port of the circulator. The focus radiator includes a standard waveguide section, an impedance matching section and a compressed radiation section.
    Type: Application
    Filed: June 9, 2017
    Publication date: February 7, 2019
    Applicant: NORTHEASTERN UNIVERSITY
    Inventors: Xia Ting FENG, Gao Ming LU, Yuan Hui LI, Xi Wei ZHANG
  • Patent number: 10196955
    Abstract: A method includes determining whether a urea refill event is detected, and clearing a quality accumulator value and clearing a latching abort command. The method includes determining whether urea fluid quality check abort conditions are met, and clearing the urea quality accumulator, latching the abort command, and exiting the reductant fluid quality check. In response to the abort conditions not being met, incrementing the urea quality accumulator according to an amount of urea being injected, and comparing the accumulated urea quantity to a low test threshold. The method includes, in response to the accumulated urea quantity being greater than the low test threshold, comparing the accumulated urea quantity to a high test threshold, and in response to the urea quantity being greater than the high test threshold, determining whether the a NOx exceedance is observed and clearing a urea quality error in response to the NOx exceedance not being observed.
    Type: Grant
    Filed: June 8, 2016
    Date of Patent: February 5, 2019
    Assignee: Cummins Emission Solutions Inc.
    Inventors: Xi Wei, David Samuel Everard, Baohua Qi, Mickey R. McDaniel, Edmund P. Hodzen, Guoquian Li
  • Publication number: 20180313727
    Abstract: An apparatus and method for determining time-dependence failure under constant temperature through high pressure true triaxial loading for hard rock, includes a pressure chamber and four actuators, wherein a sample bearing platform is arranged in a center of the pressure chamber, a sample bearing and containing chamber is arranged in a center of the sample bearing platform, and a confining pressure loading oil supply hole is formed in the sample bearing platform, and communicates with a confining pressure loading injection pump; each actuator includes a sealing cover, an annular end cover, a counter-force cylinder barrel, a piston, a piston rod, a sealing flange and a stress loading injection pump; a heating coil is arranged in the pressure chamber; a force sensor is fixedly mounted at the end part of the piston rod; and a pressure sensor is mounted in the sample bearing platform.
    Type: Application
    Filed: January 17, 2017
    Publication date: November 1, 2018
    Inventors: Xia ting FENG, Xi wei ZHANG, Cheng xiang YANG, Shuai PENG, Jun TIAN, Rui KONG, Dong hui MA
  • Publication number: 20180275034
    Abstract: A high-pressure true triaxial test apparatus with capacity of low-frequency disturbance and high-speed impact includes static and dynamic loading frames, four static loading actuators, two dynamic loading actuators and an SHPB mechanism, wherein all actuators are connected with a hydraulic station system; a hollow way is formed in the axial center of each piston shaft of the dynamic loading actuators, a dynamic pressure sensor adopting a hollow ring structure is mounted at the end part of each piston shaft, and the SHPB mechanism applies a high-speed impact load on a rock sample through the dynamic pressure sensors respectively; and the dynamic loading actuators adopt a static pressure oilway balance support sealing manner and are connected with the hydraulic station system, each oilway is provided with an energy accumulator, and flow is increased by the servo valves to drive pistons to perform dynamic response.
    Type: Application
    Filed: March 28, 2017
    Publication date: September 27, 2018
    Inventors: Xia ting FENG, Xi wei ZHANG, Rui KONG, Cheng xiang YANG, Dong hui MA, Shuai PENG, Lei SHI, Zhi bin YAO, Jun TIAN
  • Publication number: 20180239857
    Abstract: Disclosed is technology for evaluating the performance, power, area, and cost of a new or significantly modified IC fabrication process. A layout of a circuit design is provided, the circuit design including pins, transistors, and interconnects. The interconnects have at least two endpoints, each of the endpoints being either a terminal of a transistor or a pin in the circuit design. The locations for a plurality of transistor and interconnect endpoints in the layout are identified. A three-dimensional circuit representation is fabricated in accordance with the layout and the fabrication process. Parasitic resistance and capacitance values are estimated for pairs of interconnect endpoints which share an interconnect in the three-dimensional circuit representation.
    Type: Application
    Filed: February 21, 2018
    Publication date: August 23, 2018
    Applicant: Synopsys, Inc.
    Inventors: Zudian Qin, Karim El Sayed, Victor Moroz, Xi-Wei Lin
  • Patent number: 9904600
    Abstract: The present invention provides a mechanism for generating an initial copy in replication initialization. A request is received to replicate a source volume from a source node to a target node so as to generate the initial copy of the source volume in the target node. With respect to a current source data block of at least one source data block contained in the source volume, a search in the target node is performed for a target data block corresponding to the current source data block. Responsive to identifying the target data block, the initial copy of the source volume in the target node is updated using the target data block with the information from the current source data block.
    Type: Grant
    Filed: August 5, 2015
    Date of Patent: February 27, 2018
    Assignee: International Business Machines Corporation
    Inventors: Ye Chen, Ruo Meng Hao, Ke Zhao Li, Shu Xi Wei
  • Publication number: 20170318459
    Abstract: Managing data security on a mobile device. Data associated with a mobile device is received; the data includes an identification (ID) of the mobile device and a location of the mobile device relative to one or more location sensor devices. A path is determined, relative to the one or more location sensor devices, through which the mobile device has traveled. An electronic security key is communicated to the mobile device based on determining that the path corresponds to a defined path associated with the mobile device.
    Type: Application
    Filed: July 18, 2017
    Publication date: November 2, 2017
    Inventors: YE CHEN, RUOMENG HAO, TING JIANG, NING WANG, SHU XI WEI, YOUMIAO ZHANG
  • Patent number: 9763089
    Abstract: Managing data security on a mobile device. Data associated with a mobile device is received; the data includes an identification (ID) of the mobile device and a location of the mobile device relative to one or more location sensor devices. A path is determined, relative to the one or more location sensor devices, through which the mobile device has travelled. An electronic security key is communicated to the mobile device based on determining that the path corresponds to a defined path associated with the mobile device.
    Type: Grant
    Filed: June 23, 2015
    Date of Patent: September 12, 2017
    Assignee: International Business Machines Corporation
    Inventors: Ye Chen, Ruomeng Hao, Ting Jiang, Ning Wang, Shu Xi Wei, Youmiao Zhang