Abstract: Provided are an adhesive tape attaching device for cell and a manufacturing method for the adhesive tape attaching device for cell. The adhesive tape attaching device for cell includes a tooling plate, an adhesive tape clamping and pulling mechanism, an adhesive tape cutting mechanism, an adhesive tape attaching mechanism, and a driving mechanism. The tooling plate is for carrying a cell; the adhesive tape clamping and pulling mechanism is configured to clamp an adhesive tape and drive the adhesive tape to move in a horizontal direction approaching the cell; the adhesive tape cutting mechanism is disposed in a transportation direction of the adhesive tape, the adhesive tape cutting mechanism is located upstream of the tooling plate, and the adhesive tape cutting mechanism is configured to cut the adhesive tape into adhesive tape segments; the adhesive tape attaching mechanism is configured to attach the adhesive tape segment onto a to-be-attached region.

Abstract: Embodiments of this application provide a data processing method and system, and an electronic device. The method includes: Before an encoder encodes an image rendered by a graphics processing unit, the graphics processing unit obtains rendering information related to rendered image, compresses the rendering information, and transmits compressed rendering information. Then the encoder may perform encoding optimization based on the compressed rendering information in a process of encoding the rendered image. In this way, a data amount of the rendering information can be reduced, and a transmission delay of the rendering information can be reduced. In addition, the encoder performs encoding after receiving the rendering information. Therefore, in this embodiment of this application, duration of waiting for encoding by the encoder can be reduced, thereby reducing a transmission delay in an entire cloud rendering process.

Abstract: Memory cells are arranged as NAND strings to form a block divided into sub-blocks, and each NAND string includes a dummy memory cell connected to a dummy word line. Memory cells are programmed by applying programming pulses to a selected word line in a selected sub-block with program-verify performed between pulses. Unselected NAND strings are inhibited from programming by boosting channels of the unselected NAND strings in the selected sub-block from a positive pre-charge voltage to a boosted voltage. The pre-charging of the channels of unselected NAND strings is performed while lowering voltages at the end of program-verify by applying overdrive voltages to data word lines in a sub-block closer to the source line than the selected sub-block and lowering to a resting voltage a dummy word line between the sub-blocks prior to lowering to a resting voltage the data word lines in the sub-block closer to the source line.

Abstract: In a non-volatile memory system that performs programming of selected memory cells (in coordination with pre-charging and boosting of channels for unselected memory cells) and program-verify to determine whether the programming was successful, the system transitions from program-verify to the next dose of programming by concurrently lowering a voltage applied to a selected word line and voltages applied to word lines on a first side of the selected word line at the conclusion of program-verify. Subsequent to lowering the voltage applied to the selected word line, the system successively lowers voltages applied to groups of one or more word lines on a second side of the selected word line at the conclusion of program-verify beginning with a group of one or more word lines immediately adjacent the selected word line and progressing to other groups of one or more word lines disposed increasingly remote from the selected word line.

Abstract: A memory apparatus and method of operation are provided. The apparatus includes memory cells each connected to word lines. The memory cells are disposed in strings and configured to retain a threshold voltage corresponding to data states. A control means is configured to apply verification pulses of program verify voltages each associated with one of the data states to selected ones of the word lines to determine whether the memory cells connected thereto have the threshold voltage above each of the program verify voltages targeted for each of the memory cells during a program-verify portion of a program operation. The control means is also configured to trim the program verify voltages for each of the data states for a grouping of the memory cells based on quantities of the memory cells having the threshold voltage crossing over between the data states in crossovers in a verify level trimming process.

Abstract: A memory device with adaptive sense time tables is disclosed. In order to maintain a desired (initial or preset) threshold voltage distribution, the sense time is adjusted as the program-erase cycle count increases. The program-erase cycle process tends to wear down memory cells, causing the QPW window to expand and the threshold voltage to widen. However, by adjusting (i.e., reducing) the sense time for increased program-erase cycles, the QPW window and the threshold voltage can be at least substantially maintained. Additionally, systems and methods for adjusting sense time based on die-to-die variations are also disclosed.

Abstract: A memory apparatus and method of operation are provided. The apparatus includes memory cells connected to word lines and disposed in memory holes organized in rows grouped in strings and configured to retain a threshold voltage. The memory cells are connected in series between a drain-side select gate transistor on a drain-side of each of the memory holes and a source-side select gate transistor on a source-side of each of the memory holes. A control means determines whether a downshift recovery trigger event has occurred in memory operations. In response to determining the downshift recovery trigger event has occurred, the control means inserts at least one of a predetermined idle time in the memory operations and a recovery pulse of a negative voltage to the drain-side select gate transistor of the memory holes of the strings for a predetermined pulse period of time during one of the memory operations.

Abstract: The memory device includes a memory block with a plurality of memory cells, which are programmed to multiple bits per memory cell, arranged in a plurality of word lines. Control circuitry is provided and is configured to read the memory cells of a selected word line. The control circuitry separates the memory cells of the selected word line into a first group of memory cells, which are located on a side of the word line are near a voltage driver, and a second group of memory cells, which are located on an opposite side of the word line from the voltage driver. The control circuitry reads the memory cells of the first group using a first read mode and reads the memory cells of the second group using a second read mode that is different than the first read mode to reduce a fail bit count during read.

Abstract: A method for reducing odor in remediation of pesticide chemical contaminated soil comprises preparing odor control sustained-release particles and evenly covering on the surface of the pesticide chemical contaminated soil according to a certain dosage; preparing odor covering base materials and mixed bacterial solution, and preparing the odor covering soil by mixing the odor covering base materials and mixed bacterial solution in proportion, and then covering the odor covering soil on the surface of the pesticide chemical contaminated soil; and inserting heating rods into the pesticide chemical contaminated soil, and heating the surface layer of the pesticide chemical contaminated soil to 30-40° C.

Abstract: The present invention discloses a multi-energy complementary system for a co-associated abandoned mine and a use method. The multi-energy complementary system for a co-associated abandoned mine includes a mining mechanism, a grouting mechanism and an energy mechanism. In the present invention, the mining of coal and uranium resources is realized through the mining mechanism, the subsidence and seepage reduction of the stratum is realized through the grouting mechanism, and the effective utilization of waste resources is realized through the energy mechanism. Finally, with the efficient cooperation of the three mechanisms, safe and efficient development and utilization of co-associated resources in the full life cycle are realized, and the purposes of green and efficient mining of coal and uranium resources and secondary development of a coal seam goaf are achieved, thereby facilitating the realization of dual-carbon goals and the development of low-carbon green energy.

Abstract: A method of decoding a coded video bitstream includes obtaining a sequence parameter set (SPS)-level syntax element from the bitstream, wherein that the SPS-level syntax element equaling a preset value specifies that no video parameter set (VPS) is referred to by a SPS, and wherein the SPS-level syntax element being greater than the preset value specifies that the SPS refers to a VPS. The method further includes obtaining, when the SPS-level syntax element is greater than the preset value, an inter-layer enabled syntax element specifying whether one or more inter-layer reference pictures (ILRPs) are enabled to be used for the inter prediction of one or more coded pictures, and predicting one or more coded pictures based on the value of the inter-layer enabled syntax element.

Abstract: A preparation method of submicron powder of high-entropy nitride via nitride thermal reduction with mechano-chemical assistance, comprising material preparation—grinding—activation—preforming—reaction. In the present invention, high-entropy metal nitride and silicon nitride is used as raw materials, soft mechanochemical activation technologies are used to reduce reaction activation energy of the system, thereafter, by thermal reduction of the nitride, high-purity high-entropy nitride powder is prepared with solid phase methods, and the shortage of high-purity high-entropy nitride powder is addressed. There is no impure phase in the (Hf0.2Zr0.2Ti0.2Nb0.2Ta0.2)N high entropy powder prepared according to the present invention, and a single phase solid solution of good crystallinity is formed, and distribution of elements and ingredients in the powder is even, no foreign element is present, and oxygen content is controlled to be less than 0.3%.

Abstract: A memory apparatus and method of operation are provided. The apparatus includes memory cells connected to word lines including at least one edge word line and other data word lines. The memory cells are arranged in strings and are configured to retain a threshold voltage corresponding to data states. The strings are organized in rows and a control means is coupled to the word lines and the strings and identifies the at least one edge word line. The control means programs the memory cells of the strings in particular ones of the rows and associated with the at least one edge word line to have an altered distribution of the threshold voltage for one or more of the data states compared to the memory cells of the strings not in particular ones of the rows and not associated with the at least one edge word line during a program operation.

Abstract: A continuously variable transmission with both equal-difference output and equal-ratio output includes an input mechanism, a hydraulic transmission mechanism, a planetary-gear-set convergence mechanism, an equal-difference output mechanism, an equal-ratio output mechanism, a clutch assembly, and a brake. The clutch assembly connects an output end of the input mechanism to an input end of the hydraulic transmission mechanism and the planetary-gear-set convergence mechanism and connects an output end of the hydraulic transmission mechanism to the planetary-gear-set convergence mechanism. The clutch assembly connects the planetary-gear-set convergence mechanism to the equal-difference output mechanism and the equal-ratio output mechanism. The clutch assembly connects the equal-ratio output mechanism to the equal-difference output mechanism.

Abstract: The present disclosure provides a chroma block prediction method and a device. The method includes: parsing a bitstream to obtain first indication information; downsampling a first luma block by a first filter when a value of the first indication information is a first value or by using a second filter when a value of the first indication information is a second value, to obtain a second luma block; obtaining a plurality of chroma samples and a plurality of luma samples; obtaining linear model coefficients based on the plurality of chroma samples and the plurality of luma samples; and obtaining a prediction value of the current chroma block based on the second luma block and the linear model coefficients.

Abstract: A plurality of memory programming the memory cells to at least one programmed data state in a plurality of program-verify iterations. In each iteration, after a programming pulse, a sensing operation is conducted to compare the threshold voltages of the memory cells to a low verify voltage associated with a first programmed data state and to a high very voltage associated with the first programmed data state. The sensing operation includes discharging a sense node through a bit line coupled to one of the memory cells and monitoring a discharge time of the sense node. At least one aspect of the sensing operation is temperature dependent so that a voltage gap between the high and low verify voltages is generally constant across a range of temperatures.

Abstract: A handle assembly for an infant carrier is provided. The handle assembly allows the handle to be oriented in one of a plurality of positions, such as a stroller position, and infant carrier position and a car seat position. The handle assembly may include a locking mechanism allowing a handle extension to be extended only when the handle rotated to the stroller position. The handle assembly may also include a blocking mechanism that prevents the handle from rotating from the stroller position if the handle is extended.