Abstract: (57) Abstract: The present application provides methods, compositions, delivery systems, ami kits for modifying a target nucleic acid using an Argonaute (Ago) and a single-stranded guide DNA. In some embodiments, methods of gene editing in a cell, such as a mammalian cell, arc provided.

Abstract: An apparatus comprising a polarization beam splitter optically coupled to a first light path and a second light path and configured to receive a CW light having a plurality of wavelengths, forward a first light beam of the CW light along the first light path, and forward a second light beam of the CW light along the second light path. A first multiplexer coupled to the first light path and configured to de-multiplex the first light beam into a first plurality of channels each corresponding to one of the plurality of wavelengths. A second multiplexer coupled to the second light path and configured to de-multiplex the second light beam into a second plurality of channels each corresponding to one of the plurality of wavelengths. A modulator coupled to the first multiplexer and the second multiplexer and configured to modulate the first plurality of channels and the second plurality of channels.

Abstract: A gapless optical mode converter comprising a fiber holder configured to receive and hold an optical transmission line, a first glass block coupled via an optical adhesive at a first side to the fiber holder, a lens coupled via the optical adhesive at a first side to a second side of the first glass block, and a holder configured to hold the fiber holder, the first glass block, and the lens.

Abstract: An optical modulator for generating quadrature amplitude modulation (nQAM) and phase-shift keying (nPSK) signals with tunable modulation efficiency. The modulator includes a controlling circuit for adjusting the modulation efficiency or modulation depth of the modulator by controlling the direct current (DC) bias.

Abstract: The present disclosure describes membrane compositions and methods for preparing membrane compositions. In particular, the methods employ a layer-by-layer approach to membrane preparation. The membrane compositions provide significantly enhanced membrane performance over existing commercial membranes, particularly in terms of permeability and selectivity.

Abstract: A method for fabricating a photonic integrated circuit (PIC) comprises providing a silicon-on-insulator (SOI) wafer comprising an insulator layer disposed between a base semiconductor layer and a SOI layer, wherein the SOI layer comprises a waveguide, providing at least one slot within the SOI layer, wherein the at least one slot is positioned on the same or opposite sides of the waveguide, and wherein the at least one slot is positioned at a predetermined distance away from the waveguide, and removing a portion of the insulator layer to form an etched-out portion of the insulator layer, wherein the etched-out portion is positioned directly beneath the waveguide, and wherein a width of the etched-out portion is at least the width of the waveguide

Abstract: An optical transceiver comprising an optical signal input, a first modulation section coupled to the optical signal input, a second modulation section coupled to the optical signal input and positioned in serial with the first modulation section, wherein the first modulation section comprises a first digital electrical signal input, a first digital driver coupled to the first digital electrical signal input, and a first modulator coupled to the first digital driver, and wherein the second modulation section comprises a second digital electrical signal input, a second digital driver coupled to the second digital electrical signal input, and a second modulator coupled to the second digital driver, and an optical signal output coupled to the first modulation section and the second modulation section.

Abstract: An optical modulator comprises a silicon substrate, a buried oxide (BOX) layer disposed on top of the silicon substrate, and a ridge waveguide disposed on top of the BOX layer and comprising a first n-type silicon (n-Si) slab, a first gate oxide layer coupled to the first n-Si slab, a first p-type silicon (p-Si) slab coupled to the first gate oxide layer, and a light propagation path that travels sequentially through the first n-Si slab, the first gate oxide layer, and the first p-Si slab.

Abstract: The disclosure relates to an expression method of a Haemocoagulase Acutus (Halase) recombinant protein. The method includes the following steps: (1) optimizing a halase gene; (2) performing Polymerase Chain Reaction (PCR) amplification on an optimized halase gene; (3) constructing an Agkis-pMCX expression vector, transforming plasmids to competent cells of an escherichia coli for amplification, screening in an Amp-resistant manner for positive cloning, sequencing and extracting recombinant plasmids with correct sequencing; (4) transfecting recombinant plasmids to CHO cells; and (5) expressing the recombinant protein and identifying. According to the expression method, a recombinant halase is expressed first using the CHO cells cultured in a serum-free suspension manner; and by utilizing a bioengineering means, the actual production problems of insufficient raw material sources and unstable quality of a snake venom product are solved successfully.

Abstract: A metal-oxide semiconductor (MOS) optical modulator including a doped semiconductor layer having a waveguide structure, a dielectric layer disposed over the waveguide structure of the doped semiconductor layer, a gate region disposed over the dielectric layer, wherein the gate region comprises a transparent electrically conductive material having a refractive index lower than that of silicon, and a metal contact disposed over the gate region. The metal contact, the gate region, and the waveguide structure of the doped semiconductor layer may be vertically aligned with each other.

Abstract: An apparatus comprises a substrate comprising a silicon dioxide (SiO2) material disposed on top of the substrate, a silicon waveguide comprising a first adiabatic tapering and enclosed in the silicon dioxide material, and a low-index waveguide disposed on top of the substrate and adjacent to the first adiabatic tapering. A mode converter fabrication method comprises obtaining a mode converter comprising a substrate, a silicon waveguide disposed on the substrate and comprising a sidewall and a first adiabatic tapering, and a hard mask disposed on the silicon waveguide and comprising a silicon dioxide layer, wherein the hard mask does not cover the sidewall, and oxidizing the silicon waveguide and the hard mask, wherein oxidizing the silicon waveguide and the hard mask encloses the silicon waveguide within the silicon dioxide layer.

Abstract: An apparatus comprises: a first input tap; a first optical modulator coupled to the first input tap; a first output tap coupled to the first optical modulator so that the first optical modulator is positioned between the first input tap and the first output tap; and a controller indirectly coupled to the first input tap and the first output tap.

Abstract: A Dual Parallel (DP)-Inphase/Quadrature (I/Q) Mach-Zehnder Modulator (MZM) bias controller configured to generate a pair of orthogonal dither signals; multiply the pair of dither signals to create a second order orthogonal dither signal; and lock an Inphase (I) I MZM of a DP-I/Q MZM to a value of a corresponding I component of a transmission signal by applying the pair of orthogonal dither signal to a Quadrature (Q) MZM and a Phase (P) MZM of the DP-I/Q MZM; applying an I bias signal to the I MZM of the DP-I/Q MZM; detecting an output of the DP-I/Q MZM; and determining an I error signal in the output of the I MZM of the DP-I/Q MZM based on the product of second order dither signal and the output of the DP-I/Q MZM.

Abstract: An apparatus comprising a polarization beam splitter optically coupled to a first light path and a second light path and configured to receive a CW light having a plurality of wavelengths, forward a first light beam of the CW light along the first light path, and forward a second light beam of the CW light along the second light path. A first multiplexer coupled to the first light path and configured to de-multiplex the first light beam into a first plurality of channels each corresponding to one of the plurality of wavelengths. A second multiplexer coupled to the second light path and configured to de-multiplex the second light beam into a second plurality of channels each corresponding to one of the plurality of wavelengths. A modulator coupled to the first multiplexer and the second multiplexer and configured to modulate the first plurality of channels and the second plurality of channels.

Abstract: A method comprising coupling a circuit to an opto-electronic package via an anisotropic conductive film (ACF), wherein the opto-electronic package is configured to communicate electrical signals via the coupling at a maximum frequency of about 10 gigahertz (GHz) to about 40 GHz. An apparatus comprising, an opto-electronic package comprising a plurality of first electrodes, and a circuit comprising a plurality of second electrodes, wherein at least one of the first electrodes is coupled to at least one of the second electrodes via an ACF, and wherein the opto-electronic package is configured to communicate electrical signals via the coupling at a maximum frequency of about 10 GHz to about 40 GHz.

Abstract: An electronic driver circuit for use with a modulator such as a segmented Mach-Zehnder Modulator (MZM) is provided. The electronic driver circuit includes a first delay buffer implemented as a first complementary metal-oxide-semiconductor (CMOS) inverter and a second delay buffer implemented as a second CMOS inverter. The second CMOS inverter follows the first CMOS inverter and has a second gate width smaller than a first gate width of the first CMOS inverter. The first CMOS inverter is configured to produce a first delayed electrical signal from a received electrical signal and the second CMOS inverter is configured to produce a second delayed electrical signal from the first delayed electrical signal produced by the first CMOS inverter.

Abstract: A method for fabricating a photonic integrated circuit (PIC) comprises providing a wafer comprising an insulator layer positioned between a top semiconductor layer and a base semiconductor layer, patterning the top semiconductor layer to simultaneously define a waveguide and a first etch mask window for forming a fiber-guiding v-groove that substantially aligns to an axis of optical signal propagation of the waveguide, removing a first portion of the top semiconductor layer to form the waveguide according to the patterning, removing a second portion of the top semiconductor layer to form the first etch mask window according to the patterning, and forming the fiber-guiding v-groove according to the first etch mask window.

Abstract: A Dual Parallel (DP)-Inphase/Quadrature (I/Q) Mach-Zehnder Modulator (MZM) bias controller configured to generate a pair of orthogonal dither signals; multiply the pair of dither signals to create a second order orthogonal dither signal; and lock an Inphase (I) I MZM of a DP-I/Q MZM to a value of a corresponding I component of a transmission signal by applying the pair of orthogonal dither signal to a Quadrature (Q) MZM and a Phase (P) MZM of the DP-I/Q MZM; applying an I bias signal to the I MZM of the DP-I/Q MZM; detecting an output of the DP-I/Q MZM; and determining an I error signal in the output of the I MZM of the DP-I/Q MZM based on the product of second order dither signal and the output of the DP-I/Q MZM.

Abstract: An apparatus comprising a first electrical driver configured to generate a first binary voltage signal according to first data, a second electrical driver configured to generate a second binary voltage signal according to second data, wherein the first data and the second data are different, and a first optical waveguide arm coupled to the first electrical driver and the second electrical driver, wherein the first optical waveguide arm is configured to shift a first phase of a first optical signal propagating along the first optical waveguide arm according to a first voltage difference between the first binary voltage signal and the second binary voltage signal to produce a first multi-level phase-shifted optical signal.

Abstract: A metal-oxide-semiconductor (MOS) type semiconductor device, comprising a silicon substrate, a first cathode electrode and a second cathode electrode coupled to the silicon substrate and located on distal ends of the silicon substrate, a poly-silicon (Poly-Si) gate proximally located above the silicon substrate and between the first cathode electrode and the second cathode electrode, wherein the Poly-Si gate comprises a first post extending orthogonally relative to the silicon substrate comprising a first doped silicon slab, a second post extending orthogonally relative to the silicon substrate comprising a second doped silicon slab, wherein the second post is positioned so as to create a width between the first post and the second post, an anode electrode coupled to the first post and the second post and extending laterally from the first post to the second post, and a dielectric layer disposed between the first silicon substrate and the second silicon substrate.