Patents by Inventor Xiao An Shen

Xiao An Shen has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20160352325
    Abstract: An electronic driver circuit for use with a modulator such as a segmented Mach-Zehnder Modulator (MZM) is provided. The electronic driver circuit includes a first delay buffer implemented as a first complementary metal-oxide-semiconductor (CMOS) inverter and a second delay buffer implemented as a second CMOS inverter. The second CMOS inverter follows the first CMOS inverter and has a second gate width smaller than a first gate width of the first CMOS inverter. The first CMOS inverter is configured to produce a first delayed electrical signal from a received electrical signal and the second CMOS inverter is configured to produce a second delayed electrical signal from the first delayed electrical signal produced by the first CMOS inverter.
    Type: Application
    Filed: May 28, 2015
    Publication date: December 1, 2016
    Inventors: Morgan Chen, Yifan Gu, Hungyi Lee, Liang Gu, Yen Dang, Gong Lei, Yuming Cao, Xiao Shen, Yu Sheng Bai
  • Patent number: 9507180
    Abstract: A metal-oxide-semiconductor (MOS) type semiconductor device, comprising a silicon substrate, a first cathode electrode and a second cathode electrode coupled to the silicon substrate and located on distal ends of the silicon substrate, a poly-silicon (Poly-Si) gate proximally located above the silicon substrate and between the first cathode electrode and the second cathode electrode, wherein the Poly-Si gate comprises a first post extending orthogonally relative to the silicon substrate comprising a first doped silicon slab, a second post extending orthogonally relative to the silicon substrate comprising a second doped silicon slab, wherein the second post is positioned so as to create a width between the first post and the second post, an anode electrode coupled to the first post and the second post and extending laterally from the first post to the second post, and a dielectric layer disposed between the first silicon substrate and the second silicon substrate.
    Type: Grant
    Filed: November 4, 2013
    Date of Patent: November 29, 2016
    Assignee: Futurewei Technologies, Inc.
    Inventors: Qianfan Xu, Xiao Shen, Hongmin Chen
  • Patent number: 9490904
    Abstract: An optical transceiver comprising an optical signal input, a first modulation section coupled to the optical signal input, a second modulation section coupled to the optical signal input and positioned in serial with the first modulation section, wherein the first modulation section comprises a first digital electrical signal input, a first digital driver coupled to the first digital electrical signal input, and a first modulator coupled to the first digital driver, and wherein the second modulation section comprises a second digital electrical signal input, a second digital driver coupled to the second digital electrical signal input, and a second modulator coupled to the second digital driver, and an optical signal output coupled to the first modulation section and the second modulation section.
    Type: Grant
    Filed: November 8, 2013
    Date of Patent: November 8, 2016
    Assignee: Futurewei Technologies, Inc.
    Inventors: Xueyan Zheng, Dawei Zheng, Xiao Shen, Morgan Chen, Hongbing Lei
  • Patent number: 9477134
    Abstract: An apparatus comprising a modulation block comprising a plurality of modulators, wherein each of the plurality of modulators comprises an optical input port and an optical output port, and wherein all of the optical input ports and all of the optical output ports are positioned on one face of the modulation block. Another apparatus comprising a modulation block comprising one or more Mach-Zehnder modulators (MZMs), wherein each MZM is coupled to an optical input port, an optical output port, and at least one electrical trace, wherein all of the optical input ports and all of the optical output ports are positioned on a first side of the modulation block, and wherein all of the electrical traces are positioned on a second side of the modulation block, and a planar lightwave circuit (PLC) coupled to the modulation block via an optical interface.
    Type: Grant
    Filed: December 28, 2012
    Date of Patent: October 25, 2016
    Assignee: Futurewei Technologies, Inc.
    Inventors: Chunlei Liao, Morgan Chen, Xiao A. Shen, Yusheng Bai
  • Publication number: 20160299363
    Abstract: A silicon waveguide comprising a waveguide core that comprises a first positively doped (P1) region vertically adjacent to a second positively doped (P2) region. The P2 region is more heavily positively doped than the P1 region. A first negatively doped (N1) region is vertically adjacent to a second negatively doped (N2) region. The N2 region is more heavily negatively doped than the N1 region. The N2 region and the P2 region are positioned vertically adjacent to form a positive-negative (PN) junction. The N1 region, the N2 region, the P1 region, and the P2 region are positioned as a vertical PN junction and configured to completely deplete the P2 region of positive ions and completely deplete the N2 region of negative ions when a voltage drop is applied across the N1 region, the N2 region, the P1 region, and the P2 region.
    Type: Application
    Filed: April 7, 2015
    Publication date: October 13, 2016
    Inventors: Hongzhen Wei, Li Yang, Qianfan Xu, Xiao Shen
  • Publication number: 20160218811
    Abstract: An apparatus comprising a first electrical driver configured to generate a first binary voltage signal according to first data, a second electrical driver configured to generate a second binary voltage signal according to second data, wherein the first data and the second data are different, and a first optical waveguide arm coupled to the first electrical driver and the second electrical driver, wherein the first optical waveguide arm is configured to shift a first phase of a first optical signal propagating along the first optical waveguide arm according to a first voltage difference between the first binary voltage signal and the second binary voltage signal to produce a first, multi-level phase-shifted optical signal.
    Type: Application
    Filed: January 7, 2016
    Publication date: July 28, 2016
    Inventors: Morgan Chen, Qianfan Xu, Hungyi Lee, Yifan Gu, Liang Gu, Yen Dang, Gong Lei, Yuming Cao, Xiao Shen, Yu Sheng Bai
  • Patent number: 9374260
    Abstract: Methods and apparatus for directly detected optical system based on gapped CAP modulation and DSP Methods for generation and reconstruction of gapped CAP signal are disclosed. An apparatus for direct detection transmission for CAP modulated signal with two unbalanced optical sidebands separated by gaps is disclosed, in which a gapped CAP signal is generated, converted, and passed to an optical filter for unbalanced sidebands generation and wavelength locking before being transmitted over an optical link. Direct detection is performed on the optical signal and passed to gapped matching filters. Channel equalization is performed and the signal information is decoded to binary data.
    Type: Grant
    Filed: November 7, 2013
    Date of Patent: June 21, 2016
    Assignee: FUTUREWEI TECHNOLOGIES, INC.
    Inventors: Yangjing Wen, Xiao Shen, Yusheng Bai
  • Publication number: 20160118772
    Abstract: A monolithically integrated thermal tunable laser comprising a layered substrate comprising an upper surface and a lower surface, and a thermal tuning assembly comprising a heating element positioned on the upper surface, a waveguide layer positioned between the upper surface and the lower surface, and a thermal insulation layer positioned between the waveguide layer and the lower surface, wherein the thermal insulation layer is at least partially etched out of an Indium Phosphide (InP) sacrificial layer, and wherein the thermal insulation layer is positioned between Indium Gallium Arsenide (InGaAs) etch stop layers.
    Type: Application
    Filed: December 31, 2015
    Publication date: April 28, 2016
    Applicant: Futurewei Technologies, Inc.
    Inventors: Hongmin CHEN, Xuejin YAN, Rongsheng MIAO, Xiao SHEN, Zongrong LIU
  • Patent number: 9244227
    Abstract: A grating coupler comprising a semiconductor substrate, a one-dimensional (1D) grating element coupled to the semiconductor substrate, wherein the 1D grating element is adapted to simultaneously couple a first polarization component of an incident optical beam with a transverse electric (TE) waveguide mode in a first propagation direction and a second polarization component of the incident optical beam with a transverse magnetic (TM) waveguide mode in a second propagation direction, and wherein the first propagation direction is opposite of the second propagation direction.
    Type: Grant
    Filed: November 11, 2013
    Date of Patent: January 26, 2016
    Assignee: Futurewei Technologies, Inc.
    Inventors: Qianfan Xu, Xiao Shen
  • Patent number: 9231361
    Abstract: A monolithically integrated thermal tunable laser comprising a layered substrate comprising an upper surface and a lower surface, and a thermal tuning assembly comprising a heating element positioned on the upper surface, a waveguide layer positioned between the upper surface and the lower surface, and a thermal insulation layer positioned between the waveguide layer and the lower surface, wherein the thermal insulation layer is at least partially etched out of an Indium Phosphide (InP) sacrificial layer, and wherein the thermal insulation layer is positioned between Indium Gallium Arsenide (InGaAs) etch stop layers.
    Type: Grant
    Filed: April 30, 2014
    Date of Patent: January 5, 2016
    Assignee: Futurewei Technologies, Inc.
    Inventors: Hongmin Chen, Xuejin Yan, Rongsheng Miao, Xiao Shen, Zongrong Liu
  • Patent number: 9209603
    Abstract: A laser comprises a front mirror (FM), a gain section coupled to the FM, a phase section coupled to the gain section such that the gain section is positioned between the phase section and the FM, and a back mirror (BM) comprising an interferometer and coupled to the phase section such that the phase section is positioned between the BM and the gain section. A method comprises splitting a first light into a second light and a third light, reflecting the second light to form a second reflected light, reflecting the third light to form a third reflected light, and causing the second reflected light and the third reflected light to interfere and combine to form a combined light to narrow a reflectivity peak spectrum width.
    Type: Grant
    Filed: May 21, 2014
    Date of Patent: December 8, 2015
    Assignee: Futurewei Technologies, Inc.
    Inventors: Hongmin Chen, Hongbing Lei, Xiao Shen
  • Publication number: 20150316720
    Abstract: An apparatus comprises a substrate comprising a silicon dioxide (SiO2) material disposed on top of the substrate, a silicon waveguide comprising a first adiabatic tapering and enclosed in the silicon dioxide material, and a low-index waveguide disposed on top of the substrate and adjacent to the first adiabatic tapering. A mode converter fabrication method comprises obtaining a mode converter comprising a substrate, a silicon waveguide disposed on the substrate and comprising a sidewall and a first adiabatic tapering, and a hard mask disposed on the silicon waveguide and comprising a silicon dioxide (SiO2) layer, wherein the hard mask does not cover the sidewall, and oxidizing the silicon waveguide and the hard mask, wherein oxidizing the silicon waveguide and the hard mask encloses the silicon waveguide within the silicon dioxide layer.
    Type: Application
    Filed: April 30, 2015
    Publication date: November 5, 2015
    Inventors: Li Yang, Huapu Pan, Qianfan Xu, Dawei Zheng, Xiao Shen
  • Publication number: 20150301363
    Abstract: A metal-oxide semiconductor (MOS) optical modulator including a doped semiconductor layer having a waveguide structure, a dielectric layer disposed over the waveguide structure of the doped semiconductor layer, a gate region disposed over the dielectric layer, wherein the gate region comprises a transparent electrically conductive material having a refractive index lower than that of silicon, and a metal contact disposed over the gate region. The metal contact, the gate region, and the waveguide structure of the doped semiconductor layer may be vertically aligned with each other.
    Type: Application
    Filed: April 17, 2015
    Publication date: October 22, 2015
    Inventors: Hongmin Chen, Qianfan Xu, Li Yang, Xiao Shen, Dawei Zheng, Yusheng Bai, Hongbing Lei, Eric Dudley
  • Publication number: 20150293299
    Abstract: A waveguide comprising a single-mode optical core configured to carry an optical signal between an inversely tapered waveguide and an optical fiber, wherein the core extends longitudinally along an axis of optical signal propagation between the inversely tapered waveguide and the optical fiber, and an air cladding disposed adjacent to the core along the axis of optical signal propagation.
    Type: Application
    Filed: April 10, 2015
    Publication date: October 15, 2015
    Inventors: Qianfan Xu, Xiao Shen
  • Publication number: 20150288450
    Abstract: A method for wavelength conversion comprising receiving an input optical signal with a first wavelength, converting the input optical signal to a plurality of input analog signals, generating a plurality of digital signals based on the input analog signals, compensating for waveform distortions by at least filtering one or more of the digital signals to generate one or more compensated digital signals, converting the compensated digital signals to output analog signals via digital-to-analog (DA) conversion, generating an output optical signal with a second wavelength different from the first wavelength based on the output analog signals, and transmitting the output optical signal.
    Type: Application
    Filed: May 6, 2014
    Publication date: October 8, 2015
    Applicant: Futurewei Technologies, Inc.
    Inventors: Zhuhong Zhang, Chuandong Li, Xiao Shen, Dominic John Goodwill, Lewei Zhang, Hongyan Fu
  • Publication number: 20150260931
    Abstract: A free space coupling system comprising a waveguide horizontally positioned on an integrated circuit, and a silicon housing coupled to the waveguide, wherein the silicon housing comprises a reflective surface, a first port, wherein the first port is configured to receive light from an optic source positioned substantially parallel to the waveguide at a coupling point, and a second port, wherein the second port is oriented at about ninety degrees with respect to the first port, and wherein the second port is aligned with a grating port on the waveguide.
    Type: Application
    Filed: March 13, 2014
    Publication date: September 17, 2015
    Applicant: Futurewei Technologies, Inc.
    Inventors: Rongsheng Miao, Zongrong Liu, Qianfan Xu, Xiao Shen
  • Publication number: 20150212346
    Abstract: An optical modulator comprises a silicon substrate, a buried oxide (BOX) layer disposed on top of the silicon substrate, and a ridge waveguide disposed on top of the BOX layer and comprising a first n-type silicon (n-Si) slab, a first gate oxide layer coupled to the first n-Si slab, a first p-type silicon (p-Si) slab coupled to the first gate oxide layer, and a light propagation path that travels sequentially through the first n-Si slab, the first gate oxide layer, and the first p-Si slab.
    Type: Application
    Filed: January 26, 2015
    Publication date: July 30, 2015
    Inventors: Dawei Zheng, Hongbing Lei, Qianfan Xu, Xiao Shen, Yusheng Bai
  • Patent number: 9071363
    Abstract: An apparatus comprising a transmitter configured to generate an optical signal comprising a carrier modulated with at least two sidebands modulated with information, wherein the information introduces a separation gap in a frequency domain between the sidebands and the carrier, wherein one of the sidebands is an undesired sideband and another one of the sidebands is a desired sideband with a higher power intensity than the undesired sideband. A method comprising receiving an optical carrier from a light source and modulating the optical carrier with at least two sidebands modulated with information, wherein the information introduces a separation gap in a frequency domain between the sidebands and the optical carrier, wherein one of the sidebands is an undesired sideband and another one of the sidebands is a desired sideband having a higher power intensity than the undesired sideband.
    Type: Grant
    Filed: September 12, 2013
    Date of Patent: June 30, 2015
    Assignee: Futurewei Technologies, Inc.
    Inventors: Yangjing Wen, Chunlei Liao, Xiao Shen, Yusheng Bai
  • Patent number: 9036669
    Abstract: An apparatus comprising an optical medium, a power splitter coupled to the optical medium, a first delay line coupled to the power splitter such that the power splitter is positioned between the first delay line and the optical medium, a first comb reflector coupled to the first delay line such that the first delay line is positioned between the first comb reflector and the power splitter, and a second comb reflector coupled to the power splitter but not the first comb reflector and not the first delay line. A method comprising receiving an optical signal, splitting the optical signal into a first split optical signal and a second split optical signal, delaying the first split optical signal, tuning the delayed first split optical signal, tuning the second split optical signal, and delaying the tuned second split optical signal.
    Type: Grant
    Filed: September 12, 2013
    Date of Patent: May 19, 2015
    Assignee: Futurewei Technologies, Inc.
    Inventors: Hongmin Chen, Hongbing Lei, Xiao A. Shen
  • Publication number: 20150132007
    Abstract: An optical transceiver comprising an optical signal input, a first modulation section coupled to the optical signal input, a second modulation segment coupled to the optical signal input and positioned in serial with the first modulation section, wherein the first modulation section comprises a first digital electrical signal input, a first digital driver coupled to the first digital electrical signal input, and a first modulator coupled to the first digital driver, and wherein the second modulation section comprises a second digital electrical signal input, a second digital driver coupled to the second digital electrical signal input, and a second modulator coupled to the second digital driver, and an optical signal output coupled to the first modulation section and the second modulation section.
    Type: Application
    Filed: November 8, 2013
    Publication date: May 14, 2015
    Applicant: Futurewei Technologies, Inc.
    Inventors: Xueyan Zheng, Dawei Zheng, Xiao Shen, Morgan Chen, Hongbing Lei