Abstract: A magnetic tunnel junction (MTJ) device includes a pinned layer, a tunnel barrier layer on the pinned layer, and a free layer on the tunnel barrier layer. The MTJ device also includes a perpendicular magnetic anisotropic (PMA) enhancement layer on the free layer, a capping layer on the PMA enhancement layer, and a conductive path electrically shorting the capping layer, the PMA enhancement layer and the free layer. A method of fabricating a perpendicular magnetic tunnel junction (pMTJ) device includes forming a capping layer, a perpendicular magnetic anisotropic (PMA) enhancement layer and a free layer. The method also includes forming a conductive layer to short the capping layer, the PMA enhancement layer and the free layer.

Abstract: Magnetic random access memory (MRAM) bit cells employing source lines and/or bit lines disposed in multiple, stacked metal layers to reduce MRAM bit cell resistance are disclosed. Related methods and systems are also disclosed. In aspects disclosed herein, MRAM bit cells are provided in a memory array. The MRAM bit cells are fabricated in an integrated circuit (IC) with source lines and/or bit lines formed by multiple, stacked metal layers disposed above a semiconductor layer to reduce the resistance of the source lines. In this manner, if node size in the IC is scaled down, the resistance of the source lines and/or the bit lines can be maintained or reduced to avoid an increase in drive voltage that generates a write current for write operations for the MRAM bit cells.

Abstract: An in-process magnetic layer having an in-process area dimension is formed with a chemically damaged region at a periphery. At least a portion of the chemically damaged region is transformed to a chemically modified peripheral portion that is non-ferromagnetic. Optionally, the transforming is by oxidation, nitridation or fluorination, or combinations of the same.

Abstract: A method of reading from and writing to a resistive memory cache includes receiving a write command and dividing the write command into multiple write sub-commands. The method also includes receiving a read command and executing the read command before executing a next write sub-command.

Abstract: A monolithic multi-channel resistive memory includes at least one first bank associated with a first channel and tuned according to first device attributes and/or first circuit attributes. The memory also includes at least one second bank associated with a second channel and tuned according to second device attributes and/or second circuit attributes.

Abstract: A material stack of a synthetic anti-ferromagnetic (SAF) reference layer of a perpendicular magnetic tunnel junction (MTJ) may include an SAF coupling layer. The material stack may also include and an amorphous spacer layer on the SAF coupling layer. The amorphous spacer layer may include an alloy or multilayer of tantalum and cobalt or tantalum and iron or cobalt and iron and tantalum. The amorphous spacer layer may also include a treated surface of the SAF coupling layer.

Abstract: A memory cell includes a magnetic tunnel junction (MTJ) structure that includes a free layer coupled to a bit line and a pinned layer. A magnetic moment of the free layer is substantially parallel to a magnetic moment of the pinned layer in a first state and substantially antiparallel to the magnetic moment of the pinned layer in a second state. The pinned layer has a physical dimension to produce an offset magnetic field corresponding to a first switching current of the MTJ structure to enable switching between the first state and the second state when a first voltage is applied from the bit line to a source line coupled to an access transistor and a second switching current to enable switching between the second state and the first state when the first voltage is applied from the source line to the bit line.

Abstract: A magnetic tunnel junction storage element for a spin transfer torque magnetoresistive random access memory (STT-MRAM) bit cell includes a bottom electrode layer, a pinned layer adjacent to the bottom electrode layer, a dielectric layer encapsulating a portion of the bottom electrode layer and the pinned layer, the dielectric layer including sidewalls that define a hole adjacent to a portion of the pinned layer, a tunneling barrier adjacent to the pinned layer, a free layer adjacent to the tunneling barrier, and a top electrode adjacent to the free layer, wherein a width of the bottom electrode layer and/or the pinned barrier in a first direction is greater than a width of a contact area between the pinned layer and the tunneling barrier in the first direction. Also a method of forming an STT-MRAM bit cell.

Abstract: Certain aspects of the present invention relate to an electronic cigarette. In certain embodiments, electronic cigarette has: electronic cigarette body, top connecting assembly, vaporizer, middle connecting assembly, lower connecting assembly, electric connector assembly, air adjustment assembly, and mouthpiece assembly. The electronic cigarette body has an e-liquid storage tank inside. Top connecting assembly connects vaporizer to mouthpiece assembly. Middle and lower connecting assembly connects vaporizer to air adjustment assembly. Air adjustment assembly allows the user to adjust the amount of air intake to the electronic cigarette. When a user fills e-liquid storage tank with e-liquid, e-liquid flows to an e-liquid medium through e-liquid conduit openings, and is vaporized by a heating element when the user connects an electric power supply to heating element. The vaporized e-liquid in the vaporizer is provided to a user through a vaporizing chamber, a vapor discharge and an air passage to mouthpiece.

Abstract: An apparatus includes a capping layer disposed on top of a free layer. The apparatus also includes a magnetic etch stop layer disposed on top of the capping layer. The capping layer and the magnetic etch stop layer are included in a spin-transfer torque magnetoresistive random access memory (STT-MRAM) magnetic tunnel junction (MTJ) device.

Abstract: Certain aspects of the present invention relate to a heating assembly for electronic cigarette vaporizer. In certain embodiments, heating assembly includes: a pair of vaporizer shields, certain heating elements, an e-liquid medium, a pair of vapor guides, and a vaporizing chamber side cover. Vaporizer shields are disposed on a heating element base. An e-liquid medium opening is defined between the vaporizer shields. Each of the heating elements has a first terminal and a second terminal. The e-liquid medium is vertically positioned in the e-liquid medium opening. The e-liquid medium has certain heating element grooves for installing the heating elements. The vapor guides are placed between vaporizer shields and the e-liquid medium. The vaporizing chamber side cover is configured to surround the first vaporizer shield and the second vaporizer shield, the e-liquid medium. The vaporizing chamber side cover defines two e-liquid conduit openings, one on each side of the e-liquid medium.

Abstract: A method includes coupling a first magnetic tunnel junction (MTJ) element and a second MTJ element to a comparison circuit. The method also includes comparing, at the comparison circuit, a first resistance of the first MTJ element to a second resistance of the second MTJ element. The method further includes generating a first physical unclonable function (PUF) output bit based on a result of comparing the first resistance to the second resistance.

Abstract: One feature pertains to a method of implementing a physically unclonable function. The method includes initializing an array of magnetoresistive random-access memory (MRAM) cells to a first logical state, where each of the MRAM cells have a random transition voltage that is greater than a first voltage and less than a second voltage. The transition voltage represents a voltage level that causes the MRAM cells to transition from the first logical state to a second logical state. The method further includes applying a programming signal voltage to each of the MRAM cells of the array to cause at least a portion of the MRAM cells of the array to randomly change state from the first logical state to the second logical state, where the programming signal voltage is greater than the first voltage and less than the second voltage.

Abstract: Perpendicular magnetic anisotropy (PMA) type magnetic random access memory cells are constructed with a composite PMA layer to provide a magnetic tunnel junction (MTJ) with an acceptable thermal barrier. A PMA coupling layer is deposited between a first PMA layer and a second PMA layer to form the composite PMA layer. The composite PMA layer may be incorporated in PMA type MRAM cells or in-plane type MRAM cells.

Abstract: An STT magnetic memory includes adjacent columns of STT magnetic memory elements having a top electrode and a bottom electrode. A shared bit line is coupled to the top electrode of the STT magnetic memory elements in at least two of the adjacent columns. The bottom electrodes of the STT magnetic memory elements of one of the adjacent columns are selectively coupled to one source line, and the bottom electrodes of the STT magnetic memory elements of another among the adjacent columns are selectively coupled to another source line.

Abstract: Systems and method for reading/sensing data stored in magnetoresistive random access memory (MRAM) cells using magnetically annealed reference cells. A MRAM includes a reference circuit comprising at least one magnetic storage cell, wherein each magnetic storage cell in the MRAM is programmed to the same state. The reference circuit includes a load element coupled to the magnetic storage cell, wherein the load element is configured to establish a reference voltage during a read operation.

Abstract: The present invention relates to vaporizer heating assemblies for electronic cigarettes. In certain embodiments, vaporizer heating assemblies include: heating assembly and electric conductor assembly. Heating assembly includes: heating assembly covers, round heating element mounting base, heating elements, and e-liquid media. Heating elements have heating wires formed in a large surface to ensure sufficient vaporization of e-liquid. Heating assembly covers define certain e-liquid conduit openings to allow the e-liquid to flow from outside of the heating assembly covers into the e-liquid media. The heating elements are in direct contact with the e-liquid media to generate large amount of vapor for its user. Electric conductor assembly includes: an electric connector base for a first terminal of heating elements, an electrode for a second terminal of heating elements, and an insulation cover to insulate the electric connector base and the electrode.

Abstract: A method of reading from and writing to a resistive memory cache includes receiving a write command and dividing the write command into multiple write sub-commands. The method also includes receiving a read command and executing the read command before executing a next write sub-command.

Abstract: One feature pertains to a method of implementing a physically unclonable function that includes providing an array of metal-insulator-metal (MIM) devices, where the MIM devices are configured to represent a first resistance state or a second resistance state and a plurality of the MIM devices are initially at the first resistance state. The MIM devices have a random breakdown voltage that is greater than a first voltage and less than a second voltage, where the breakdown voltage represents a voltage that causes the MIM devices to transition from the first resistance state to the second resistance state. The method further includes applying a signal line voltage to the MIM devices to cause a portion of the MIM devices to randomly breakdown and transition from the first resistance state to the second resistance state, the signal line voltage greater than the first voltage and less than the second voltage.

Abstract: A magnetic tunnel junction (MTJ) device includes a pinned layer, a tunnel barrier layer on the pinned layer, and a free layer on the tunnel barrier layer. The MTJ device also includes a perpendicular magnetic anisotropic (PMA) enhancement layer on the free layer, a capping layer on the PMA enhancement layer, and a conductive path electrically shorting the capping layer, the PMA enhancement layer and the free layer. A method of fabricating a perpendicular magnetic tunnel junction (pMTJ) device includes forming a capping layer, a perpendicular magnetic anisotropic (PMA) enhancement layer and a free layer. The method also includes forming a conductive layer to short the capping layer, the PMA enhancement layer and the free layer.