Abstract: A perpendicular magnetic tunnel junction (pMTJ) device includes a perpendicular reference layer, a tunnel barrier layer on a surface of the perpendicular reference layer, and a perpendicular free layer on a surface of the tunnel barrier layer. The pMTJ device also includes a dielectric passivation layer on the tunnel barrier layer and surrounding the perpendicular free layer. The pMTJ device further includes a high permeability material on the dielectric passivation layer that is configured to be magnetized by the perpendicular reference layer and to provide a stray field to the perpendicular free layer that compensates for a stray field from the perpendicular reference layer.

Abstract: A multi-core processor is presented. The multi-core processor includes a first spin transfer torque magnetoresistive random-access memory (STT-MRAM) cache associated with a first core of the multi-core processor and tuned according to first attributes and a second STT-MRAM cache associated with a second core of the multi-core processor and tuned according to second attributes.

Abstract: Perpendicular magnetic anisotropy (PMA) type magnetic random access memory cells are constructed with a composite PMA layer to provide a magnetic tunnel junction (MTJ) with an acceptable thermal barrier. A PMA coupling layer is deposited between a first PMA layer and a second PMA layer to form the composite PMA layer. The composite PMA layer may be incorporated in PMA type MRAM cells or in-plane type MRAM cells.

Abstract: A method of reading from and writing to a resistive memory cache includes receiving a write command and dividing the write command into multiple write sub-commands. The method also includes receiving a read command and executing the read command before executing a next write sub-command.

Abstract: The present invention relates to an e-cigarette. The e-cigarette includes: a connecting assembly, a removable mouth piece, an e-liquid tank, a vaporizing assembly, and a rotatable vaporizer tube. The connecting assembly includes: a mouth piece connector, a connecting ring, an e-liquid injection plate, and one or more e-liquid injection holes. Removable mouth piece has a mouth piece plug to be inserted into the mouth piece connector. The e-liquid tank has an e-liquid tank separation plate for dividing e-liquid tank into an upper e-liquid chamber and a lower e-liquid chamber. E-liquid tank is connected to the connecting assembly. Vaporizing assembly is detachably connected to a lower end of e-liquid tank. Rotatable vaporizer tube is disposed on e-liquid tank separation plate. The rotatable vaporizer tube is insertably connected to the mouth piece 1 through the connecting assembly. The rotatable vaporizer tube is also connected to an air exhaust of the vaporizing assembly.

Abstract: In a particular embodiment, an apparatus is disclosed that includes a first electrode and a magnetic tunnel junction (MTJ) structure coupled to the first electrode. A second electrode is coupled to the MTJ structure, the second electrode having a first sidewall. A spacer layer is coupled to the first electrode, the first sidewall of the second electrode, and a sidewall of the MTJ structure. A third electrode is coupled to the second electrode, where the first sidewall of the second electrode contacts a bottom surface of the third electrode at a right angle.

Abstract: The present invention relates to a heating element assembly for e-cigarette. The heating element assembly includes a cylindrical ceramic e-liquid conduit to store e-liquid, at least one heating wire wound on the inside of ceramic e-liquid conduit, a base, and a cylinder on top of base. The ceramic wall around the ceramic e-liquid conduit forms a vapor path with an air intake at bottom and an air exhaust on top. The cylinder sits on the base to form a main cavity 300 that houses the ceramic e-liquid conduit. The cylinder has an e-liquid intake to receive e-liquid from an e-liquid storage. The e-liquid enters the ceramic e-liquid conduit through e-liquid intake, and the e-liquid is heated by the heating wire to generate vapor, and the generated vapor goes up through the air intake, the air exhaust, to exit the heating element assembly from the upper end of the vapor path.

Abstract: One feature pertains to a method for implementing a physically unclonable function (PUF). The method includes providing an array of magnetoresistive random access memory (MRAM) cells, where the MRAM cells are each configured to represent one of a first logical state and a second logical state. The array of MRAM cells are un-annealed and free from exposure to an external magnetic field oriented in a direction configured to initialize the MRAM cells to a single logical state of the first and second logical states. Consequently, each MRAM cell has a random initial logical state of the first and second logical states. The method further includes sending a challenge to the MRAM cell array that reads logical states of select MRAM cells of the array, and obtaining a response to the challenge from the MRAM cell array that includes the logical states of the selected MRAM cells of the array.

Abstract: The present invention relates to an electronic cigarette. The electronic cigarette includes: a first tubular body forming a vaporizer chamber, a removable mouth piece disposed on the first tubular body, a vaporizer assembly disposed inside of vaporizer chamber, having a positive terminal with an e-liquid conduit hole, a negative terminal, 2 sets of e-liquid media, and 2 heating wires wound around e-liquid media, a squeezable e-liquid tank adapted for storing e-liquid with an e-liquid conduit to provide e-liquid to e-liquid media in vaporizer chamber, a second tubular body forming a squeezable e-liquid tank container; and a connecting and sealing assembly for connecting first tubular body and second tubular body. When a user squeezes the squeezable e-liquid tank to soak e-liquid media with e-liquid, user starts e-cigarette smoking by switch on a battery power source to provide electrical power heating wires 25 to vaporize e-liquid and generate e-cigarette vapor for user.

Abstract: One feature pertains to a method of implementing a physically unclonable function (PUF). The method includes exposing an array of magnetoresistive random access memory (MRAM) cells to an orthogonal external magnetic field. The MRAM cells are each configured to represent one of a first logical state and a second logical state, and the orthogonal external magnetic field is oriented in an orthogonal direction to an easy axis of a free layer of the MRAM cells to place the MRAM cells in a neutral logical state that is not the first logical state or the second logical state. The method further includes removing the orthogonal external magnetic field to place each of the MRAM cells of the array randomly in either the first logical state or the second logical state.

Abstract: A memory cell includes a magnetic tunnel junction (MTJ) structure that includes a free layer coupled to a bit line and a pinned layer. A magnetic moment of the free layer is substantially parallel to a magnetic moment of the pinned layer in a first state and substantially antiparallel to the magnetic moment of the pinned layer in a second state. The pinned layer has a physical dimension to produce an offset magnetic field corresponding to a first switching current of the MTJ structure to enable switching between the first state and the second state when a first voltage is applied from the bit line to a source line coupled to an access transistor and a second switching current to enable switching between the second state and the first state when the first voltage is applied from the source line to the bit line.

Abstract: An apparatus includes a structure that includes a bottom cap layer surrounding a metal pad. The apparatus also includes a magnetic tunnel junction (MTJ) device that includes a bottom electrode coupled to the structure. The MTJ device includes magnetic tunnel junction layers, a top electrode, and a logic cap layer. The MTJ device is offset with respect to the metal pad.

Abstract: A method includes applying a programming voltage to a drain of an access transistor, where a source of the access transistor is coupled to a drain region of a one-time programmable (OTP) device. The method also includes applying a first voltage to a gate of the OTP device and a second voltage to a terminal of the OTP device to bias a channel region of the OTP device, where the first voltage and the second voltage are substantially equal.

Abstract: A hierarchical memory magnetoresistive random-access memory architecture is disclosed. In a particular embodiment, an apparatus includes a first magnetoresistive random-access memory (MRAM) device corresponding to a first level in a hierarchical memory system. The apparatus includes a second MRAM device corresponding to a second level in the hierarchical memory system. The first MRAM device has a first access latency and includes a first magnetic tunnel junction (MTJ) device having a first physical configuration. The second MRAM device has a second access latency and includes a second MTJ device having a second physical configuration. The first access latency is less than the second access latency.

Abstract: An entropy source and a random number (RN) generator are disclosed. In one aspect, a low-energy entropy source includes a magneto-resistive (MR) element and a sensing circuit. The MR element is applied a static current and has a variable resistance determined based on magnetization of the MR element. The sensing circuit senses the resistance of the MR element and provides random values based on the sensed resistance of the MR element. In another aspect, a RN generator includes an entropy source and a post-processing module. The entropy source includes at least one MR element and provides first random values based on the at least one MR element. The post-processing module receives and processes the first random values (e.g., based on a cryptographic hash function, an error detection code, a stream cipher algorithm, etc.) and provides second random values having improved randomness characteristics.

Abstract: A magnetic tunnel junction (MTJ) includes a free layer formed from a ferrimagnetic rare-earth-transition-metal (RE-TM) alloy having the net moment dominated by a sublattice moment of a rare-earth (RE) composition of the RE-TM alloy. The MTJ further includes a pinned layer formed from a rare-earth-transition-metal (RE-TM) alloy having the net moment dominated by a sublattice moment of a rare-earth (RE) composition of the RE-TM alloy, the pinned layer comprising one or more amorphous thin insertion layers such that a net magnetic moment of the free layer and the pinned layer is low or close to zero.

Abstract: An electronic cigarette having ceramic heating element with a heating rod has: (a) a hollow atomizing stern, (b) a first conductive ring sleeved at bottom of atomizing stem and airproof with atomizing stem, (c) a second conductive ring placed in and insulated from first conductive ring, (d) a conduit positioned in atomizing stern, with conduit base tightly contacting first conductive ring, (e) a liquid blocker positioned on top of atomizing stern, (f) a cigarette mouthpiece located on top of the atomizing stem and holds liquid blocker, and (g) a heating rod. The inner wall of atomizing stern, outer wall of conduit, top of first conductive ring, and bottom of liquid blocker together form a liquid storage chamber for storing e-liquid. In one embodiment, the heating rod can be a solid ceramic heating rod. In another embodiment, the heating rod can be a hollow ceramic heating rod.

Abstract: A first write driver applies a first voltage above a fixed potential to a first terminal. A second write driver applies a second voltage that is higher above the fixed potential than the first voltage to a second terminal. There is at least one magnetic tunnel junction (MTJ) structure coupled at the first terminal at a first side to the first write driver and coupled at the second terminal at a second side to the second write driver. The first side of the MTJ structure receives the first voltage and the second side of the MTJ structure receives a ground voltage to change from a first state to a second state. The second side of the MTJ structure receives the second voltage and the first side of the MTJ structure receives the ground voltage to change from the second state to the first state.

Abstract: An apparatus includes a perpendicular magnetic anisotropy magnetic tunnel junction (pMTJ) device. The pMTJ device includes a storage layer and a reference layer. The reference layer includes a portion configured to produce a ferrimagnetic effect. The portion includes a first layer, a second layer, and a third layer. The second layer is configured to antiferromagnetically (AF) couple the first layer and the third layer during operation of the pMTJ device.

Abstract: In a particular embodiment, a method is disclosed that includes forming a magnetic tunnel junction (MTJ) structure including a conductive layer on a substrate. The method also includes depositing a sacrificial layer on the conductive layer before depositing a patterning film layer.