Abstract: Embodiments of the present disclosure describe a susceptor for chemical vapor deposition comprising a horizontal component with a top surface and a bottom surface, wherein the top surface is configured to support one or more wafers; a vertical component extending from the bottom surface of the horizontal component along a longitudinal axis that is substantially perpendicular to the horizontal component; and a hollow region within the vertical component. Embodiments of the present disclosure describe a susceptor for chemical vapor deposition comprising a horizontal plate with a top surface configured to support one or more wafers, a vertical rod integrated with and perpendicular to the horizontal plate, and a hollow region within the vertical rod for promoting temperature uniformity across the top surface of the horizontal plate.

Abstract: This application discloses a circuit board and a manufacturing method thereof, and a terminal device, and relates to the technical field of terminals, to resolve the problem of low reliability of connection between a radio frequency front-end circuit and a radio frequency back-end circuit in a circuit board of a terminal device in a related technology. The circuit board includes a substrate and a liquid metal body, where the substrate is provided with a radio frequency front-end circuit, a radio frequency back-end circuit, and a pad group, where the pad group includes a first pad electrically connected to the radio frequency front-end circuit and a second pad electrically connected to the radio frequency back-end circuit, and the second pad is spaced apart from the first pad; and the liquid metal body is arranged at a position of the pad group and connects the first pad to the second pad, so as to electrically connect the radio frequency front-end circuit to the radio frequency back-end circuit.

Abstract: A transmission processing method includes: in a non-PDCCH monitoring period, monitoring, by a terminal, a first indication on at least one target channel or signal monitoring occasion; and performing, by the terminal, a predetermined behavior based on the first indication. The predetermined behavior includes at least one of monitoring the target channel or signal monitoring occasion, monitoring a PDCCH, measuring a CSI-RS, or reporting CSI.

Abstract: The present disclosure discloses a method for automatically identifying south troughs by improved Laplace and relates to the technical field of meteorology. The method includes the following steps: acquiring grid data of a geopotential height field; calculating a gradient field of the geopotential height field in an x direction; searching for a turning point where a gradient value turned from being negative to being positive, and cleaning the gradient field; calculating a divergence of the x direction to obtain an improved Laplacian numerical value L?; performing 0,1 binarization processing on the L? to obtain a black-and-white image and a plurality of targets of potential troughs, merging the black-and-white image and the plurality of targets of the potential troughs by expansion, recovering original scale through erosion, and selecting an effective target through an angle of direction of a contour and an axial ratio.

Abstract: A light-emitting diode includes an n-type aluminum nitride layer formed on a substrate, a multiple quantum well formed on the n-type aluminum nitride layer, and a p-type aluminum nitride hole-injection layer formed adjacent to the multiple quantum well. The multiple quantum well includes a first aluminum nitride quantum well layer having a fixed composition and surrounded by first and second aluminum nitride quantum barrier layers, and a second aluminum nitride quantum well layer having a fixed composition and surrounded by the second aluminum nitride quantum barrier layer and a third aluminum nitride quantum barrier layer. At least one of the first, second, and third aluminum nitride quantum barrier layers has a graded aluminum composition. The first aluminum nitride quantum barrier layer is adjacent to the n-type aluminum nitride layer and the third aluminum nitride quantum barrier layer is adjacent to the p-type aluminum nitride hole-injection layer.

Abstract: A light-emitting device includes doped layer arranged on a substrate. The doped layer is n-doped or p-doped. A multiple quantum well is arranged on the doped layer and includes a plurality of adjacent pairs of quantum wells and quantum barriers. An electron blocking layer is arranged on the multiple quantum well. The doped layer, the electron blocking layer, the quantum wells, and all of the quantum barriers except for the last quantum barrier include a first III-nitride alloy. The last quantum barrier includes a second III-nitride alloy that is different from the first III-nitride alloy. The second III-nitride alloy has a bandgap larger than a bandgap of the last quantum well and smaller than a bandgap of the electron blocking layer. An interface between the last quantum barrier and the electron blocking layer exhibits a polarization difference between 0 and 0.012 C/m2.

Abstract: An optoelectronic device includes a flexible substrate, a cerium oxide (CeO2) layer arranged on the flexible substrate, a single crystal ?-III-oxide layer arranged on the CeO2 layer, and a metallic contact layer arranged on the single crystal ?-III-oxide layer.

Abstract: A multilayer metalens includes a substrate having first, second, and third axes that are perpendicular to each other. A first layer of antennas is arranged, relative to the third axis, on the substrate. Each antenna of the first layer of antennas is rotated relative to the first and second axes based on a position of each antenna of the first layer of antennas along the first and second axes. A second layer of antennas is arranged, in the third axis, on the first layer of antennas. Each antenna of the second layer of antennas is rotated relative to the first and second axes based on a position of each antenna of the second layer of antennas along the first and second axes. Each antenna in the first and second layers of antennas has, in a plane parallel to a top of the substrate an elongated shape.

Abstract: The present application is applicable to the field of computer application technology, and provides methods and devices for detecting driver distraction, including: acquiring the EEG data of the driver; preprocessing the EEG data, and then inputting it into a pre-trained distraction detection model to obtain the distraction detection result of the driver; obtaining the distracted detection model by training a preset convolution-recurrent neural network using EEG sample data and corresponding distracted result label; sending the distraction detection result to an in-vehicle terminal associated with the identity information of the driver, wherein the distraction detection result is used to trigger the in-vehicle terminal to generate driving reminder information according to the distraction detection result. When detecting driver distraction, the accuracy and efficiency are improved, thereby reducing the probability of traffic accidents.

Abstract: A susceptor device for a chemical vapor deposition (CVD) reactor including metal organic CVD (MOCVD) used in the semiconductor industry. The susceptor device particularly is used with induction heating and includes a horizontal plate adapted for holding one or more wafers and a vertical rod around which the induction heating coils are disposed. A screw system and an insulator can further be used. This design helps prevent undesired levitation and allows for the gas injectors of the reactors to be placed closer to the wafer for deposition during high-temperature deposition processes at susceptor surface temperatures of about 1500° C. or higher.

Abstract: A method for forming a semiconductor device with a group-III oxide active layer including at least two group-III materials is provided. A group-III oxide substrate is provided and a group-III oxide active layer including at least one group-III material on the group-III oxide substrate is formed on the group-III oxide substrate. A group-III material in the group-III oxide substrate is different from the at least one group-III material in the group-III oxide active layer. The group-III oxide active layer including at least one group-III material and the group-III oxide substrate are annealed at a temperature greater than or equal to 1,000° C. so that the group-III material in the group-III oxide substrate diffuses into the group-III oxide active layer to form the group-III oxide active layer including the at least two group-III materials.

Abstract: A method for forming a semiconductor device involves selecting a substrate on which a wurtzite III-nitride alloy layer will be formed, and a piezoelectric polarization and an effective piezoelectric coefficient for the wurtzite III-nitride alloy layer. It is determined whether there is a wurtzite III-nitride alloy composition satisfying the selected effective piezoelectric coefficient. It is also determined whether there is a thickness for a layer formed from the wurtzite III-nitride alloy composition satisfying the selected piezoelectric polarization based on the selected substrate and the selected effective piezoelectric coefficient.

Abstract: A semiconductor device includes a III-nitride buffer layer and a III-nitride barrier layer. A boron nitride alloy interlayer interposed between the III-nitride buffer layer and the III-nitride barrier layer. A portion of the III-nitride buffer layer includes a two-dimensional electron gas (2DEG) channel that is on a side of the III-nitride buffer layer adjacent to the boron nitride alloy interlayer.

Abstract: An optoelectronic device a substrate, a first doped contact layer arranged on the substrate, a multiple quantum well layer arranged on the first doped contact layer, a boron nitride alloy electron blocking layer arranged on the multiple quantum well layer, and a second doped contact layer arranged on the boron nitride alloy electron blocking layer.

Abstract: An optoelectronic device a substrate, a first doped contact layer arranged on the substrate, a multiple quantum well layer arranged on the first doped contact layer, a boron nitride alloy electron blocking layer arranged on the multiple quantum well layer, and a second doped contact layer arranged on the boron nitride alloy electron blocking layer.

Abstract: A light-emitting diode includes an n-type aluminum nitride layer formed on a substrate, a multiple quantum well formed on the n-type aluminum nitride layer, and a p-type aluminum nitride hole-injection layer formed adjacent to the multiple quantum well. The multiple quantum well includes a first aluminum nitride quantum well layer having a fixed composition and surrounded by first and second aluminum nitride quantum barrier layers, and a second aluminum nitride quantum well layer having a fixed composition and surrounded by the second aluminum nitride quantum barrier layer and a third aluminum nitride quantum barrier layer. At least one of the first, second, and third aluminum nitride quantum barrier layers has a graded aluminum composition. The first aluminum nitride quantum barrier layer is adjacent to the n-type aluminum nitride layer and the third aluminum nitride quantum barrier layer is adjacent to the p-type aluminum nitride hole-injection layer.

Abstract: A method for forming a semiconductor device comprising a graded wurtzite III-nitride alloy layer, including a wurtzite III-nitride alloy, on a second layer. A polarization doping concentration profile is selected for the graded wurtzite III-nitride alloy layer based on an intended function of the semiconductor device. Based on the selected polarization doping concentration profile for the graded wurtzite III-nitride alloy layer, a composition-polarization change rate of the graded wurtzite III-nitride alloy layer and a grading speed of the graded wurtzite III-nitride alloy layer are determined. The composition-polarization change rate and grading speed are based on a composition of first and second elements of the wurtzite III-nitride alloy.

Abstract: A method for forming a semiconductor device involves selecting a substrate on which a wurtzite III-nitride alloy layer will be formed, and a piezoelectric polarization and an effective piezoelectric coefficient for the wurtzite III-nitride alloy layer. It is determined whether there is a wurtzite III-nitride alloy composition satisfying the selected effective piezoelectric coefficient. It is also determined whether there is a thickness for a layer formed from the wurtzite III-nitride alloy composition satisfying the selected piezoelectric polarization based on the selected substrate and the selected effective piezoelectric coefficient.

Abstract: An optoelectronic device a substrate, a first doped contact layer arranged on the substrate, a multiple quantum well layer arranged on the first doped contact layer, a boron nitride alloy electron blocking layer arranged on the multiple quantum well layer, and a second doped contact layer arranged on the boron nitride alloy electron blocking layer.

Abstract: A method for forming a semiconductor device comprising a graded wurtzite III-nitride alloy layer, including a wurtzite III-nitride alloy, on a second layer. A polarization doping concentration profile is selected for the graded wurtzite III-nitride alloy layer based on an intended function of the semiconductor device. Based on the selected polarization doping concentration profile for the graded wurtzite III-nitride alloy layer, a composition-polarization change rate of the graded wurtzite III-nitride alloy layer and a grading speed of the graded wurtzite III-nitride alloy layer are determined. The composition-polarization change rate and grading speed are based on a composition of first and second elements of the wurtzite III-nitride alloy.