Abstract: Liquid purifying apparatus integrating a filter assembly and an ultraviolet light disinfection assembly that are suitable for portable water purification are described. A first apparatus includes a container, a cap assembly including a filter removably coupled to a first opening of the container and a disinfection assembly coupled to a second opening of the container and adapted to emit UV light to disinfect liquid in the container. A second apparatus includes upper and lower reservoirs, a filter assembly between the reservoirs, a disinfection assembly coupled to an opening in the lower reservoir and adapted to emit UV light to disinfect liquid in the lower reservoir and a spout in fluid communication with the lower reservoir.

Abstract: A monolithic semiconductor light emitting device is described. The device includes an n-type region, a p-type region, an active region of a multiple quantum well structure comprising a plurality of alternating barrier and active layers interposed between the n-type region and the p-type region. The device emits multiple single-wavelength spectral distributions of ultraviolet light each having a peak wavelength of between 210 nm and 400 nm and/or a broadband spectral output having a wavelength of between 210 nm and 400 nm. Methods of making the device and lamps comprising the device are also described.

Abstract: A III-Nitride semiconductor LED provides broadband light emission, across all or most of the visible light wavelength spectrum, and a method for producing same. The LED includes a polarization field management template that has a three-dimensional patterned surface. The surface may be patterned with an array of hemispherical cavities, which may be formed by growing the template around a temporary template layer of spherical or other crystals. The method involves growing a quantum well layer on the patterned surface. The topographical variations in the patterned surface of the template cause corresponding topographical variations in the quantum well layer. These variations in spatial orientation of portions of the quantum well layer cause the polarization field of the quantum well layer to vary across the surface of the LED, which leads to energy transition shifting that provides “white” light emission across a broad wavelength spectrum.

Abstract: A III-Nitride semiconductor LED provides broadband light emission, across all or most of the visible light wavelength spectrum, and a method for producing same. The LED includes a polarization field management template that has a three-dimensional patterned surface. The surface may be patterned with an array of hemispherical cavities, which may be formed by growing the template around a temporary template layer of spherical or other crystals. The method involves growing a quantum well layer on the patterned surface. The topographical variations in the patterned surface of the template cause corresponding topographical variations in the quantum well layer. These variations in spatial orientation of portions of the quantum well layer cause the polarization field of the quantum well layer to vary across the surface of the LED, which leads to energy transition shifting that provides “white” light emission across a broad wavelength spectrum.