Abstract: The present invention provides an image sensor, the image sensor includes a substrate, a first circuit layer on the substrate, at least one nanowire photodiode located on the first circuit layer and electrically connected with the first circuit layer, wherein the nanowire photodiode comprises a lower material layer and an upper material layer, and a P-N junction or a Schottky junction is arranged between the lower material layer and the upper material layer, wherein the lower material layer comprises a perovskite material, and a precursor layer located under the lower material layer, wherein the precursor layer comprises different metal elements as the lower material layer, a top surface of the precursor layer and a top surface of the lower material layer are disposed on different levels.

Abstract: The present invention provides an image sensor, the image sensor includes a substrate, a first circuit layer on the substrate, at least one nanowire photodiode. located on the first circuit layer and electrically connected with the first circuit layer, wherein the nanowire photodiode comprises a lower material layer and an upper material layer, and a P-N junction or a Schottky junction is arranged between the lower material layer and the upper material layer, wherein the lower material layer comprises a perovskite material, and a precursor layer located under the lower material layer, wherein the precursor layer comprises different metal elements as the lower material layer.

Abstract: A semiconductor device and a method for fabricating the semiconductor device are provided. The semiconductor device includes a plurality of device units. The device units includes a first device unit, and the first device unit includes a substrate including two source/drain regions and a gate region disposed between the two source/drain regions; a gate electrode layer disposed on the gate region, and a top surface of the gate electrode layer is coplanar to top surfaces of the two source/drain regions; a first channel layer disposed on the gate electrode layer, wherein the first channel layer includes a 2D semiconductor material; two air spacers disposed below the first channel layer and between the gate region and the two source/drain regions, respectively.

Abstract: An image sensor structure includes a semiconductor substrate; an interconnection layer on the semiconductor substrate; nano-pillar structures, each including a first doped layer, a second doped layer and a third doped layer stacked in sequence; conductive structures, respectively electrically connected to the first doped layer and the interconnection layer, the second doped layer and the interconnection layer, and the third doped layer and the interconnection layer; a first insulating layer on the interconnection layer and wrapping the nano-pillar structures and the conductive structures, wherein the first doping layer is exposed on the first insulating layer; a transparent barrier layer on the first insulating layer; and a photoelectric thin film structure on the first insulating layer and electrically connected to the interconnection layer. The photoelectric thin film structure includes photoconductive film portions.

Abstract: A resistive random access memory includes a first electrode, a second electrode, a dielectric layer, a protection layer, and at least one switching layer. The dielectric layer is formed on the first electrode. The dielectric layer has an opening exposing a portion of the first electrode. The protection layer is disposed on sidewalls of the opening. The switching layer is disposed on the exposed portion of the first electrode and exposes a portion of sidewalls of the protection layer. The second electrode is at least one conductive layer and is disposed on the switching layer in the opening.

Abstract: An image sensor structure including a substrate, a nanowire structure, a first conductive line, a second conductive line, and a third conductive line is provided. The nanowire structure includes a first doped layer, a second doped layer, a third doped layer, and a fourth doped layer sequentially stacked on the substrate. The first doped layer and the third doped layer have a first conductive type. The second doped layer and the fourth doped layer have a second conductive type. The first conductive line is connected to a sidewall of the second doped layer. The second conductive line is connected to a sidewall of the third doped layer. The third conductive line is connected to the fourth doped layer.

Abstract: A dense optical flow calculation system and method based on an FPGA (Field Programmable Gate Array) are provided. The system comprises a software system deployed on a host and a dense optical flow calculation module deployed on the FPGA. Pixel information of two continuous frames of pictures is obtained from a host end in the system, and optical flow is obtained by calculation by means of the steps such as smoothing processing, polynomial expansion, intermediate variable calculation, optical flow calculation. An image pyramid and iterative optical flow calculation can be achieved by repeatedly calling a calculation core module in the FPGA; a final calculation result is returned to the host end.

Abstract: An image sensor structure including a substrate, a nanowire structure, a first conductive line, a second conductive line, and a third conductive line is provided. The nanowire structure includes a first doped layer, a second doped layer, a third doped layer, and a fourth doped layer sequentially stacked on the substrate. The first doped layer and the third doped layer have a first conductive type. The second doped layer and the fourth doped layer have a second conductive type. The first conductive line is connected to a sidewall of the second doped layer. The second conductive line is connected to a sidewall of the third doped layer. The third conductive line is connected to the fourth doped layer.

Abstract: A photosensitive device includes an integrated circuit structure and a plurality of photodiodes disposed on the integrated circuit structure. The photodiodes respectively includes a first material layer and a second material layer overlapping on the first material layer and extending beyond the first material layer to directly contact a surface of the integrated circuit structure. The first material layer and the second material layer are made of two-dimensional semiconductor materials.

Abstract: A photosensitive device is disclosed, including an integrated circuit structure, a first pad and a second pad exposed from a surface of the integrated circuit structure, a first material layer disposed on the surface of the integrated circuit structure and covering the first pad, and a second material layer disposed on the first material layer and covering the second pad. The first material layer and the second material layer form a heterojunction photodiode.

Abstract: A method for forming a photosensitive device includes the steps of providing an integrated circuit structure having a first pad and a second pad exposed from a surface of the integrated circuit structure, forming a first material layer on the surface of the integrated circuit structure, patterning the first material layer to expose the second pad, forming a second material layer on the first material layer and covering the second pad, and patterning the second material.

Abstract: Embodiments disclosed herein include electronic packages and methods of forming such packages. In an embodiment, the electronic package comprises a first trace embedded in a package substrate. In an embodiment, the first trace comprises a first region, where the first region has a first width, and a second region, where the second region has a second width that is smaller than the first width.

Abstract: An image sensor structure includes a semiconductor substrate; an interconnection layer on the semiconductor substrate; nano-pillar structures, each including a first doped layer, a second doped layer and a third doped layer stacked in sequence; conductive structures, respectively electrically connected to the first doped layer and the interconnection layer, the second doped layer and the interconnection layer, and the third doped layer and the interconnection layer; a first insulating layer on the interconnection layer and wrapping the nano-pillar structures and the conductive structures, wherein the first doping layer is exposed on the first insulating layer; a transparent barrier layer on the first insulating layer; and a photoelectric thin film structure on the first insulating layer and electrically connected to the interconnection layer. The photoelectric thin film structure includes photoconductive film portions.

Abstract: The present invention provides an image sensor, the image sensor includes a substrate, a first circuit layer on the substrate, at least one nanowire photodiode located on the first circuit layer and electrically connected with the first circuit layer, wherein the nanowire photodiode comprises a lower material layer and an upper material layer, and a P-N junction or a Schottky junction is arranged between the lower material layer and the upper material layer, wherein the lower material layer comprises a perovskite material, and a precursor layer located under the lower material layer, wherein the precursor layer comprises different metal elements as the lower material layer

Abstract: Provided are a recombinant classical swine fever virus comprising at least one substitution within the epitope of the E2 protein specifically recognized by the 6B8 monoclonal antibody, an immunogenic composition comprising said CSFV, the use of said immunogenic composition for preventing and/or treating diseases associated with CSFV in an animal, a method or a kit for differentiating animals infected with CSFV from animals vaccinated with said immunogenic composition, and an attenuated classical swine fever viruses.

Abstract: The invention provides an image sensor, the image sensor includes a substrate, a first circuit layer located on the substrate, and at least one nanowire photodiode located on the first circuit layer and electrically connected to the first circuit layer, the nanowire photodiode comprises a lower material layer and an upper material layer with a P-N junction between the lower material layer and the upper material layer, the lower material layer includes perovskite material.

Abstract: A method for forming a photosensitive device includes the steps of providing an integrated circuit structure having a first pad and a second pad exposed from a surface of the integrated circuit structure, forming a first material layer on the surface of the integrated circuit structure, patterning the first material layer to expose the second pad, forming a second material layer on the first material layer and covering the second pad, and patterning the second material.