Abstract: A method for manufacturing an array substrate, an array substrate and a display panel are provided. The method includes forming patterns of a gate metal layer and a gate insulating layer successively on a base plate, forming a pattern of a semiconductor layer, where the pattern of the semiconductor layer comprises a pattern of an active region and a pattern of a pixel electrode region, the semiconductor layer comprises an insulative oxide layer and a semiconductive oxide layer stacked on the insulative oxide layer, and the insulative oxide layer is located between the gate insulating layer and the semiconductive oxide layer, forming a pattern of a source and drain metal layer, and subjecting the semiconductive oxide layer in the pixel electrode region to plasma treatment, to convert the semiconductive oxide layer in the pixel electrode region into a conductor.

Abstract: A transfer device and a transfer method using the same. The transfer device comprises a first conveyance roller, a transfer roller and a second conveyance roller. The transfer roller includes a roller body and stamp contacts formed on and protruded from the roller body. The stamp contacts can absorb elements, axes of the first conveyance roller. The transfer roller and the second conveyance roller are arranged in parallel with each other. The transfer roller is interposed between the first and second conveyance rollers. A first roll gap is formed between the first conveyance roller and the transfer roller to convey a medium substrate, and a second roll gap is formed between the second conveyance roller and the transfer roller to convey a target substrate. The transfer device and method can be used to transfer a great amount of elements to the substrate having large size.

Abstract: It is provided a low-temperature polysilicon thin film transistor formed on a substrate, including: a gate electrode on the substrate; an active layer on the gate electrode, the active layer including a channel region, the channel region having a polysilicon region and amorphous silicon regions respectively on both sides of the polysilicon region; and an etch stop layer on the active layer. An orthogonal projection of the polysilicon region on the substrate is located within an orthogonal projection of the gate electrode on the substrate, and an area of the orthogonal projection the polysilicon region on the substrate is smaller than an area of the orthogonal projection of the gate electrode on the substrate. The orthogonal projection of the polysilicon region on the substrate is located within an orthogonal projection of the etch stop layer on the substrate.

Abstract: A light valve structure, a manufacturing method therefor, an operating method therefor, an array substrate and an electronic device are provided. The light valve structure includes a base substrate, a light-transmissive part and a light-shielding part. The light-transmissive part is disposed on the base substrate and light-transmissive, and it at least includes a first electrode. The light-shielding part is disposed on the light-transmissive part; a first end of the light-shielding part is fixed relative to the light-transmissive part; and the light-shielding part includes a base layer and a second electrode layered on the base layer. The light-shielding part is configured to be curled so as to be away from the light-transmissive part, and/or the light-shielding part is configured to be spread due to the mutual adsorption between the first electrode and the second electrode, so as to be superimposed on the light-transmissive part.

Abstract: A quantum dot ink, a manufacturing method thereof and a quantum dot light emitting diode device are provided. The quantum dot ink includes a non-polar organic solvent, a surface tension modifier and a hydrophobic quantum dot, the quantum dot ink further includes a carrier transport material, wherein phase separation is present between the hydrophobic quantum dot and the carrier transport material. After completing ink-jet printing the quantum dot ink, phase separation occurs between the hydrophobic quantum dot and the carrier transport material. Thus, the two-layer structure of a hydrophobic quantum dot layer and a carrier transport material layer is formed through one process. Not only a quantum dot light emitting device is manufactured by the method of ink-jet printing, but also the operation is simplified, and the manufacturing cost of the quantum dot light emitting device is reduced.

Abstract: A manufacturing method of an array substrate, an array substrate and a display device are provided. The method includes the following operations: forming a light shielding layer formed of a metal blacken production on a base substrate, wherein the metal blacken production is a product by blackening a metal; forming a preset film layer on the base substrate which is provided with the light shielding layer; forming both a pattern of the light shielding layer and a pattern of the preset film layer through one patterning process. The method of forming a pattern of the light shielding layer and a pattern of the preset film layer through one patterning process saves one patterning process.

Abstract: A transfer device with three transfer bases comprises: a first machine base that carries a substrate; and at least one transfer assembly that is located above the first machine base, wherein the at least one transfer assembly comprises: a second machine base that carries a target device; a third machine base that is located above the second machine base; and a transfer head that is disposed on the third machine base for acquiring the target device from the second machine base and transferring the target device to a prescribed location on the substrate. In this disclosure, since the transfer assembly is located above the first machine base, a path that the transfer head needs to move along to complete the transfer process is shorter, thereby improving the production efficiency.

Abstract: A substrate, a display device and a method for manufacturing the substrate are provided. The substrate includes a base substrate and a wire grid array formed on the base substrate, wherein the wire grid array comprises a plurality of metal patterns arranged in sequence, and a width of a side of each of the metal patterns away from the base substrate is smaller than a width of a side of the metal pattern close to the base substrate.

Abstract: A display panel and a manufacturing method therefor, a drive method and a display device. The display panel includes a first substrate and a second substrate which are arranged opposite to each other. The first substrate includes a first base substrate, and a plurality of first wire grid polarizers and a plurality of pixel units, which are successively located on a side of the first base substrate facing the second substrate in an array arrangement; polarization directions of two adjacent first wire grid polarizers are perpendicular to each other. The second substrate includes: a second base substrate, and a plurality of second wire grid polarizers in an array arrangement which are located on a side of the second base substrate facing the first substrate, and polarization directions of two adjacent second wire grid polarizers are perpendicular to each other.

Abstract: A light emitting device, a fabricating method thereof, and a display device are disclosed. In the light emitting device, a light emitting functional layer includes at least two QD light emitting layers which emit light of different colors, and a transparent insulating layer which is arranged between any two neighboring QD light emitting layers. The light emitting device has a reduced power consumption, and the problem of shift in color of the emitted light due to high-energy excitons transfer is overcome.

Abstract: A friction electric generator and a manufacturing method thereof are provided. The friction electric generator includes a first substrate and a second substrate disposed oppositely, a first electrode and a polymer insulating layer sequentially formed on a side of the first substrate facing the second substrate; a second electrode formed on a side of the second substrate facing the first substrate; wherein, the first electrode and the second electrode are each made of a flexible conductive substance, the first substrate and the second substrate are each made of a flexible insulating substance, and the polymer insulating layer and the second electrode is capable of generating electricity by friction.

Abstract: Embodiments of the present invention disclose a thin film transistor and a manufacturing method thereof, an array substrate, and a display device, which relates to the field of display technology, and solves the problem that the adhesion of the electrode thin film with the adjacent thin film layer in the thin film transistor of the prior art is relatively bad. More specifically, an embodiment of the present invention provides a thin film transistor, comprising a gate, a source, a drain and a buffer layer, the buffer layer is located at one side or two sides of the gate, the source or the drain, the material of the buffer layer is a copper alloy material, the copper alloy material contains nitrogen element or oxygen element, the copper alloy material further contains aluminum element.

Abstract: An array substrate and a display device are provided. The array substrate comprises a plurality of signal lines (40), a plurality of connecting lines (50) and a driving module (60) in a peripheral region (1) outside a display region (2); the connecting lines (50) are configured for connecting the signal lines (40) and the driving module (60), to transmit signal from the signal lines (40) to the driving module (60), wherein, at least one of the connecting lines (50) and at least one of the signal lines (40) are designed to intersect with and insulated from each other in a first region (N). The at least one of the signal lines (40) includes, in a second region (0) other than the first region (N), a first electrode line layer (401) and a second electrode line layer (402), while, in the first region (N), includes the first electrode line layer (401) but does not include the second electrode line layer (402).

Abstract: A photodetector, a driving method thereof, a display panel and a display device are disclosed in the field of display technology. The photodetector includes photosensitive element, a voltage divider, a switch circuitry and a detection transistor. The photosensitive element and the voltage divider are connected in series between two power terminals. The gate of the detection transistor is connected to a first voltage dividing node between the photosensitive element and the voltage divider. Therefore, when the resistance of the photosensitive element becomes smaller under illumination, the voltage of the first voltage dividing node correspondingly rises, and the detection transistor is turned on and may output a current to a read line under the driving of a DC power terminal. The magnitude of the current is determined by the magnitude of the voltage of the first voltage dividing node.

Abstract: A thin film transistor, a method of fabricating the same, an array substrate and a display device are disclosed. The method of fabricating the thin film transistor comprises: forming a semiconductor layer; forming a conductive film that does not react with acid solution on the semiconductor layer to be employed as a protective layer; forming a source electrode and a drain electrode on the protective layer; and removing a portion of the protective layer between the source electrode and the drain electrode to expose a portion of the semiconductor layer between the source electrode and the drain electrode.

Abstract: The embodiments of the present disclosure disclose a collimated light source, a manufacturing method thereof and a display device. The collimated light source includes a substrate, a film layer with a plurality of concave microstructures on the substrate, a reflective layer on the film layer, and a plurality of light-emitting parts corresponding to the concave microstructures one-to-one. Each of the light-emitting parts is located at a focal point of a corresponding concave microstructure. According to the embodiments of the present disclosure, the light emitted from each light-emitting part is reflected by the reflective layer on the corresponding concave microstructure and then exits in parallel light from a side of the reflective layer facing away from the substrate.

Abstract: A display device, a manufacturing method thereof, a driving method thereof and a display apparatus. The display device includes: a display panel; and an electrochromic device located on a light exiting side of the display panel. The electrochromic device and the display panel share a first base substrate and a first transparent electrode in the display panel that are close to the light exiting side of the display panel.

Abstract: A manufacturing method of an array substrate is provided. The method includes sequentially depositing a first electrode layer and a gate metal layer on a base substrate, the first electrode layer including at least two conductive layers, formation materials of the at least two conductive layers having different etching rates. The method also includes forming a photoresist layer on the gate metal layer, exposing and developing the photoresist layer using a halftone mask plate, performing a first etching process on the gate metal layer, etching the first electrode layer, and ashing the photoresist layer, performing a second etching process on the gate metal layer by using remaining photoresist layer as a mask, stripping the remaining photoresist layer, and sequentially forming a semiconductor layer, a source and drain electrode layer, a via-hole and a second electrode layer on the gate metal layer on which the second etching process has been performed.

Abstract: The invention relates to a light emitting device, a manufacturing method thereof and a display device. The light emitting device comprises: a substrate, and a first electrode layer, a second electrode layer and a light emitting layer arranged above the substrate, the light emitting layer being disposed between the first electrode layer and the second electrode layer, the light emitting layer comprises a hole transport layer having a first thickness which is capable of avoiding performance degradation of the light emitting device.

Abstract: The present disclosure provides a pixel isolation wall and its manufacturing method. The pixel isolation wall includes an oleophilic layer arranged on a substrate on which a TFT array and a pixel electrode array is formed, and an oleophobic layer arranged on the oleophilic layer and configured to define, together with the oleophilic layer, a plurality of recess regions corresponding to the pixel electrode array.