Abstract: An array substrate, a method for fabricating the same, and a display device are disclosed. The array substrate includes a substrate and a plurality of pixel units on the substrate. Each pixel unit comprises at least a thin film transistor and an ILED. A drain of each thin film transistor is connected with a first pole of each ILED through a first electrode line, and a second pole of each ILED is connected with a second electrode line. Since the ILEDs have the advantages of small size, high brightness, high contrast, lightness of weight, low consumption, wide gamut, high efficiency, long lifetime, quick response or the like, the array substrate onto which the ILEDs are applied by transferring has a high resolution, an improved display effect or the like.

Abstract: The present disclosure relates to a complementary thin film transistor, a manufacturing method thereof, and an array substrate in the field of semiconductors. The method includes: forming a first semiconductor layer on an active layer pattern and patterning the first semiconductor layer to form a first ohmic contact layer; forming a second semiconductor layer on the active layer pattern and patterning the second semiconductor layer to form a second ohmic contact layer. During the process of manufacturing the complementary thin film transistor, the first semiconductor layer is formed on the active layer pattern and the first semiconductor layer is patterned to form the first ohmic contact layer. In addition, the second semiconductor layer is formed on the active layer pattern and the second semiconductor layer is patterned to form the second ohmic contact layer.

Abstract: The present disclosure discloses an X-ray flat-panel detector and a method for preparing the same, and a white insulating material. The X-ray flat-panel detector includes: a thin-film transistor substrate; an insulating reflection layer, which is provided on the thin-film transistor substrate and has a reflection function, wherein the insulating reflection layer is provided with a contact hole through which a source electrode of the thin-film transistor substrate is exposed; a pixel electrode, which is provided on the insulating reflection layer, wherein the pixel electrode is electrically connected to the source electrode of the thin-film transistor substrate via the contact hole; a photodiode, which covers the pixel electrode; an electrode, which is provided on the photodiode; and an X-ray conversion layer, which is provided on the electrode.

Abstract: A method for manufacturing an array substrate, an array substrate and a display panel are provided. The method includes forming patterns of a gate metal layer and a gate insulating layer successively on a base plate, forming a pattern of a semiconductor layer, where the pattern of the semiconductor layer comprises a pattern of an active region and a pattern of a pixel electrode region, the semiconductor layer comprises an insulative oxide layer and a semiconductive oxide layer stacked on the insulative oxide layer, and the insulative oxide layer is located between the gate insulating layer and the semiconductive oxide layer, forming a pattern of a source and drain metal layer, and subjecting the semiconductive oxide layer in the pixel electrode region to plasma treatment, to convert the semiconductive oxide layer in the pixel electrode region into a conductor.

Abstract: Provided are a color film, a substrate and a display device. The color film is used for transmitting a light with one color of three primary colors, and comprises a first absorbing pigment and a second absorbing pigment, wherein absorption spectrum ranges of the first and second absorbing pigments correspond to spectral bands of lights with the other two colors of the three primary colors respectively.

Abstract: The present disclosure discloses a pixel structure and a preparation method thereof, a pixel display method and an array substrate. The pixel structure comprises: a thin film transistor TFT for controlling a Micro-Electro-Mechanical System MEMS switch; the Micro-Electro-Mechanical System MEMS switch being used for controlling transmission amount of outgoing light of a quantum dot light emitting diode QLED device; the quantum dot light emitting diode QLED device being a top emission type for emitting light constantly based on a constant light emitting driving signal.

Abstract: A sputtering apparatus and a target changing device thereof are disclosed. The target changing device includes a stand, a mounting shaft on the stand, a target mounting body sleeved on an outside of the mounting shaft and being ratable around an axis of the mounting shaft, and a first driving mechanism configured to drive the target mounting body to rotate around the axis of the mounting shaft. The target mounting body includes at least two target mounting surfaces configured to mount targets.

Abstract: The present disclosure discloses a pixel structure and a preparation method thereof, a pixel display method and an array substrate. The pixel structure comprises: a thin film transistor TFT for controlling a Micro-Electro-Mechanical System MEMS switch; the Micro-Electro-Mechanical System MEMS switch being used for controlling transmission amount of outgoing light of a quantum dot light emitting diode QLED device; the quantum dot light emitting diode QLED device being a top emission type for emitting light constantly based on a constant light emitting driving signal.

Abstract: The present disclosure provides an array substrate, a method for producing the same and a display apparatus. The array substrate has a display region and a driving circuit region adjacent to the display region, wherein the display region and the driving circuit region share a same base substrate; the driving circuit region includes a timer control register and/or a system on chip; wherein the timer control register is configured to achieve the timing control of the array substrate, the system on chip being configured to achieve the driving control of the array substrate.

Abstract: An array substrate and a manufacturing method thereof, a display panel and a display device are provided. The array substrate includes: a base substrate; a gate line and a data line disposed on the base substrate, wherein the gate line and the data line are intersected to define a pixel region; and a pixel electrode and a common electrode that are in the pixel region, wherein both the pixel electrode and the common electrode are perpendicular to the base substrate and protruded from the base substrate, and the pixel electrode and the common electrode are opposite to each other; and after a voltage is applied to the pixel electrode and the common electrode, an electric field parallel to the base substrate is generated between a surface of the pixel electrode facing the common electrode and a surface of the common electrode facing the pixel electrode.

Abstract: An imprint template includes a first region and a second region located in the periphery of the first region. The first region is provided with a first imprint structure configured to imprint a first film layer pattern into a base material in a product region of a target substrate. The second region is provided with a second imprint structure configured to imprint a second film layer pattern into the base material in the periphery of the product region of the target substrate. And the second film layer pattern is used for assessing imprint quality of the first film layer pattern.

Abstract: In accordance with various embodiments, the disclosed subject matter provides a display device and a related fabricating method. In some embodiments, the display device comprises: a substrate and a plurality of display units on the substrate, wherein each of the plurality of display units comprises: a first color sub-pixel, comprising a first quantum dot material and a first light source, wherein the first color sub-pixel is configured to provide a first color light by stimulating the first quantum dot material with the first light source; and a second color sub-pixel, comprising a second quantum dot material and a second light source, wherein the second color sub-pixel is configured to provide a second color light by stimulating the second quantum dot material with the second light source.

Abstract: A quantum dot light emitting diode, a display apparatus, and a manufacturing method are provided. The manufacturing method includes forming a first electrode, a first functional layer, a buffer layer, a quantum dot layer, a second functional layer and a second electrode on a base substrate sequentially, wherein the first functional layer is made from organic material, a material for the buffer layer includes a polar organic solvent, and forming the quantum dot layer includes forming a solution including quantum dots and a non-polar organic solvent above the buffer layer using inkjet printing method, the non-polar organic solvent and the polar organic solvent are capable of dissolving each other; and removing the polar organic solvent and the non-polar organic solvent to form the quantum dot layer.

Abstract: This invention provides an organic electroluminescent device, a method of preparing the same, a display substrate comprising the same, and a display apparatus. According to the invention, the agglomeration and self quenching of quantum dots can be effectively prevented as the quantum dots are uniformly dispersed in electroluminescent polymer fibers. Due to the fluorescence resonance energy transfer effect between the electroluminescent polymer and the quantum dots, a higher quantum yield is achieved, and the luminescence efficiency of the quantum dots can be improved accordingly. Furthermore, since the light emission from the quantum dots is achieved by the fluorescence resonance energy transfer effect, which is an energy transfer process without damage to the quantum dots, the damage to quantum dots is less and thus the lifetime thereof can be beneficially increased, as compared to the direct charge injection mode of the prior art.

Abstract: The invention relates to a light emitting device, a manufacturing method thereof and a display device. The light emitting device comprises: a substrate, and a first electrode layer, a second electrode layer and a light emitting layer arranged above the substrate, the light emitting layer being disposed between the first electrode layer and the second electrode layer, the light emitting layer comprises a hole transport layer having a first thickness which is capable of avoiding performance degradation of the light emitting device.

Abstract: This disclosure provides a transfer device and a transfer method thereof. The transfer device comprises: a first machine base that carries a substrate; and at least one transfer assembly that is located above the first machine base, wherein the at least one transfer assembly comprises: a second machine base that carries a target device; a third machine base that is located above the second machine base; and a transfer head that is disposed on the third machine base for acquiring the target device from the second machine base and transferring the target device to a prescribed location on the substrate. In this disclosure, since the transfer assembly is located above the first machine base, a path that the transfer head needs to move along to complete the transfer process is shorter, thereby improving the production efficiency.

Abstract: A thin film transistor, an array substrate and a display device are provided by the present disclosure. The thin film transistor is on a base substrate, a profile of a width edge of the channel includes an up-and-down curved section in a direction perpendicular to a surface of the base substrate.

Abstract: A light emitting device, a fabricating method thereof, and a display device are disclosed. In the light emitting device, a light emitting functional layer includes at least two QD light emitting layers which emit light of different colors, and a transparent insulating layer which is arranged between any two neighboring QD light emitting layers. The light emitting device has a reduced power consumption, and the problem of shift in color of the emitted light due to high-energy excitons transfer is overcome.

Abstract: An imprinting device and an imprinting method using the same are disclosed. The imprinting device includes: a chamber body and a base, which are able to combine with each other to form an imprinting chamber, the imprinting chamber being divided into a first chamber and a second chamber by a dividing film; and a movable supporting member, configured to support an imprinting stencil inside the second chamber, and to allow the imprinting stencil to: under the drive of gas pressure within the imprinting chamber, contact a substrate to be imprinted and apply a pressure to the substrate. The imprinting technical provided by the present disclosure decreases bubble defect rate, improves uniformity of large area imprinting, and makes possible large area nano-imprinting technology.

Abstract: The disclosure provides a transfer device and a transfer method using the same. The transfer device comprises a first conveyance roller, a transfer roller and a second conveyance roller. The transfer roller includes a roller body and stamp contacts formed on and protruded from the roller body. The stamp contacts can absorb elements, axes of the first conveyance roller. The transfer roller and the second conveyance roller are arranged in parallel with each other. The transfer roller is interposed between the first and second conveyance rollers. A first roll gap is formed between the first conveyance roller and the transfer roller to convey a medium substrate, and a second roll gap is formed between the second conveyance roller and the transfer roller to convey a target substrate. The transfer device and method can be used to transfer a great amount of elements to the substrate having large size.