Abstract: The present disclosure provides a display panel separation pillar and a method for manufacturing the same, a display panel and a display device. The display panel separation pillar includes a first material pattern and a second material pattern on the first material pattern. The first material pattern includes an upper surface and a lower surface opposite to each other, and a first separation lateral side and a second separation lateral side which are opposite to each other and between the upper surface and the lower surface. The second material pattern includes an upper surface and a lower surface opposite to each other. The upper surface of the first material pattern directly contacts with the lower surface of the second material pattern. Projections of the first separation lateral side and the second separation lateral side of the first material pattern onto a plane of the lower surface of the second material pattern are between edges of the lower surface of the second material pattern.

Abstract: A display panel includes a first substrate and a second substrate which are arranged opposed to each other. The space between the first substrate and the second substrate is separated into a plurality of sub-pixel regions. Within each sub pixel region, a first electrode, a first fluid layer, a second fluid layer, a hydrophobic dielectric layer and a second electrode are arranged in this order. The first fluid layer is made of hydrophilic liquid. The second fluid layer is made of ink. When no electric field is applied between the first electrode and the second electrode, the ink spreads over the surface of the hydrophobic dielectric layer. When an electric field is applied between the first electrode and the second electrode, the ink aggregates to expose the hydrophobic dielectric layer.

Abstract: An electrode structure and an organic light emitting unit and the manufacturing method thereof are disclosed. The electrode structure includes: a substrate; a plurality of strip-like partitions disposed on the substrate; and an electrode covering a surface of the substrate. The electrode includes a first portion located on a surface of each of the strip-like partitions and a second portion located between two adjacent strip-like partitions, each of the strip-like partitions includes an upper layer and a lower layer which are stacked with each other, the upper layer and the lower layer are made of different materials; a bottom surface of the upper layer completely covers a top surface of the lower layer, and a width of the bottom surface of the upper layer is larger than a width of the top surface of the lower layer in a plane perpendicular to an extending direction of the strip-like partitions.

Abstract: The embodiments of the present disclosure provide an imprint template, a detection method and a detection device. The imprint template includes a first region and a second region located in the periphery of the first region. The first region is provided with a first imprint structure configured to imprint a first film layer pattern into a base material in a product region of a target substrate. The second region is provided with a second imprint structure configured to imprint a second film layer pattern into the base material in the periphery of the product region of the target substrate. And the second film layer pattern is used for assessing imprint quality of the first film layer pattern.

Abstract: A thin film transistor, a method of fabricating the same, an array substrate and a display device are disclosed. The method of fabricating the thin film transistor comprises: forming a semiconductor layer; forming a conductive film that does not react with acid solution on the semiconductor layer to be employed as a protective layer; forming a source electrode and a drain electrode on the protective layer; and removing a portion of the protective layer between the source electrode and the drain electrode to expose a portion of the semiconductor layer between the source electrode and the drain electrode.

Abstract: A display panel and a manufacturing method therefor, a drive method and a display device. The display panel includes a first substrate and a second substrate which are arranged opposite to each other. The first substrate includes a first base substrate, and a plurality of first wire grid polarizers and a plurality of pixel units, which are successively located on a side of the first base substrate facing the second substrate in an array arrangement; polarization directions of two adjacent first wire grid polarizers are perpendicular to each other. The second substrate includes: a second base substrate, and a plurality of second wire grid polarizers in an array arrangement which are located on a side of the second base substrate facing the first substrate, and polarization directions of two adjacent second wire grid polarizers are perpendicular to each other.

Abstract: A light-emitting diode, a method for fabricating the same, and a display device are disclosed. The light-emitting diode includes a first and second electrode; a first carrier transporting layer, a light emitting layer, and a second carrier transporting layer which are arranged between the first and second electrode in this order The light-emitting diode further includes a second carrier transporting layer which is arranged between the light emitting layer and the second electrode. The second carrier blocking layer blocks a portion of the second carrier from being transported to the light emitting layer. This decreases the injecting efficiency of the second carrier, improves an injecting balance between the second carrier and the first carrier with a low injecting efficiency, avoids energy consumption in the form of heat, and increases the light output efficiency and lifetime of the light-emitting diode.

Abstract: A thin film transistor, a method of fabricating the same, an array substrate and a display device are disclosed. The method of fabricating the thin film transistor comprises: forming a semiconductor layer; forming a conductive film that does not react with acid solution on the semiconductor layer to be employed as a protective layer; forming a source electrode and a drain electrode on the protective layer; and removing a portion of the protective layer between the source electrode and the drain electrode to expose a portion of the semiconductor layer between the source electrode and the drain electrode.

Abstract: An array substrate and a display device are disclosed. The array substrate includes a peripheral area in which a plurality of gate electrode material lines, a plurality of source-drain electrode material lines and a plurality of first metal lines are disposed. Overlapping areas are provided between or among the gate electrode material lines, the source-drain material lines and the first metal lines; a number of the overlapping areas of the source-drain material lines and the first metal lines is less than a number of the overlapping areas of the source-drain material lines and the gate electrode material lines; the gate electrode material lines, the source-drain material lines and the first metal lines are configured as connecting lines of circuits in the peripheral area.

Abstract: A preparation method of an oxide thin-film transistor is disclosed, and this method includes: forming a gate electrode, a gate insulating layer, an active layer, a source electrode and a drain electrode; forming of the active layer, the source electrode and the drain electrode includes: sequentially forming an oxide semiconductor thin film and a source-drain electrode metal thin film on a base substrate, an entire surface of the oxide semiconductor thin film being in direct contact with the source-drain electrode metal thin film; and patterning the oxide semiconductor thin film and the source-drain electrode metal thin film with a dual-tone mask so as to form the active layer, the source electrode and the drain electrode by a single patterning process.

Abstract: A manufacturing method of an array substrate is provided. The method includes sequentially depositing a first electrode layer and a gate metal layer on a base substrate, the first electrode layer including at least two conductive layers, formation materials of the at least two conductive layers having different etching rates. The method also includes forming a photoresist layer on the gate metal layer, exposing and developing the photoresist layer using a halftone mask plate, performing a first etching process on the gate metal layer, etching the first electrode layer, and ashing the photoresist layer, performing a second etching process on the gate metal layer by using remaining photoresist layer as a mask, stripping the remaining photoresist layer, and sequentially forming a semiconductor layer, a source and drain electrode layer, a via-hole and a second electrode layer on the gate metal layer on which the second etching process has been performed.

Abstract: The present disclosure provides a pixel isolation wall and its manufacturing method. The pixel isolation wall includes an oleophilic layer arranged on a substrate on which a TFT array and a pixel electrode array is formed, and an oleophobic layer arranged on the oleophilic layer and configured to define, together with the oleophilic layer, a plurality of recess regions corresponding to the pixel electrode array.

Abstract: The present disclosure provides an X-ray flat panel detector including: a base substrate; thin film transistors (TFTs), a pixel electrode layer, photodiodes, a transparent electrode layer, and an X-ray conversion layer which are arranged on the base substrate; and an electric field application portion configured to generate an electric field, wherein the photodiodes are arranged in the electric field, and a moving direction of negative charges when visible light rays are converted to electrical signals by the photodiodes is substantially same as a direction of the electric field. In this detector, it is applied a direction of the electric field which is substantially same as the moving direction of negative charges in the photodiode, so that movement of holes and electrons of the photodiode may be accelerated under an influence of the electric field, and thus the electrical signal may promptly arrive at the pixel electrode.

Abstract: In accordance with various embodiments, the disclosed subject matter provides a display device and a related fabricating method. In some embodiments, the display device comprises: a substrate and a plurality of display units on the substrate, wherein each of the plurality of display units comprises: a first color sub-pixel, comprising a first quantum dot material and a first light source, wherein the first color sub-pixel is configured to provide a first color light by stimulating the first quantum dot material with the first light source; and a second color sub-pixel, comprising a second quantum dot material and a second light source, wherein the second color sub-pixel is configured to provide a second color light by stimulating the second quantum dot material with the second light source.

Abstract: The present disclosure provides an array substrate, a method for producing the same and a display apparatus. The array substrate has a display region and a driving circuit region adjacent to the display region, wherein the display region and the driving circuit region share a same base substrate; the driving circuit region includes a timer control register and/or a system on chip; wherein the timer control register is configured to achieve the timing control of the array substrate, the system on chip being configured to achieve the driving control of the array substrate.

Abstract: A quantum dot light emitting diode, a display apparatus, and a manufacturing method are provided. The manufacturing method includes forming a first electrode, a first functional layer, a buffer layer, a quantum dot layer, a second functional layer and a second electrode on a base substrate sequentially, wherein the first functional layer is made from organic material, a material for the buffer layer includes a polar organic solvent, and forming the quantum dot layer includes forming a solution including quantum dots and a non-polar organic solvent above the buffer layer using inkjet printing method, the non-polar organic solvent and the polar organic solvent are capable of dissolving each other; and removing the polar organic solvent and the non-polar organic solvent to form the quantum dot layer.

Abstract: A manufacturing method of an array substrate, an array substrate and a display device are provided. The method includes the following operations: forming a light shielding layer formed of a metal blacken production on a base substrate, wherein the metal blacken production is a product by blackening a metal; forming a preset film layer on the base substrate which is provided with the light shielding layer; forming both a pattern of the light shielding layer and a pattern of the preset film layer through one patterning process. The method of forming a pattern of the light shielding layer and a pattern of the preset film layer through one patterning process saves one patterning process.

Abstract: A quantum dot ink, a manufacturing method thereof and a quantum dot light emitting diode device are provided. The quantum dot ink includes a non-polar organic solvent, a surface tension modifier and a hydrophobic quantum dot, the quantum dot ink further includes a carrier transport material, wherein phase separation is present between the hydrophobic quantum dot and the carrier transport material. After completing ink-jet printing the quantum dot ink, phase separation occurs between the hydrophobic quantum dot and the carrier transport material. Thus, the two-layer structure of a hydrophobic quantum dot layer and a carrier transport material layer is formed through one process. Not only a quantum dot light emitting device is manufactured by the method of ink-jet printing, but also the operation is simplified, and the manufacturing cost of the quantum dot light emitting device is reduced.

Abstract: A preparation method of an oxide thin-film transistor is disclosed, and this method includes: forming a gate electrode, a gate insulating layer, an active layer, a source electrode and a drain electrode; forming of the active layer, the source electrode and the drain electrode includes: sequentially forming an oxide semiconductor thin film and a source-drain electrode metal thin film on a base substrate, an entire surface of the oxide semiconductor thin film being in direct contact with the source-drain electrode metal thin film; and patterning the oxide semiconductor thin film and the source-drain electrode metal thin film with a dual-tone mask so as to form the active layer, the source electrode and the drain electrode by a single patterning process.

Abstract: The present invention discloses a touch screen substrate and a method of manufacturing the same. The touch screen substrate includes a capacitance layer comprising a plurality of electrodes, a first cover layer formed on the capacitance layer; a plurality of conductive bridges located on the first cover layer and configured to be electrically connected to a part of the electrodes that are electrically isolated; and a plurality of electrical connection lines, configured to respectively be electrically connected to the respective conductive bridge so as to electrically connect the first electrode with a touch detecting circuit. A material layer for forming the electrical connection lines is different from a material layer for forming the conductive bridges such that the conductive bridges located below the electrical connection lines are not corroded when the material layer for the electrical connection lines is etched.