Abstract: The present application provides a module structure with high efficiency and good heat dissipation performance, which improves the heat dissipation capability of the VRM module by means of the design of the self-contained heat sink, so as to improve the output power of the VRM module; by means of the device placement in the VRM module, the parasitic parameters on the power transmission path are reduced, and the conversion efficiency of the VRM module is improved; and the dynamic performance of the VRM module is further improved by means of the TLVR technology.

Abstract: The invention provides a two-phase voltage regulator module, an N-phase voltage regulator module applying the two-phase voltage regulator module and a manufacturing process of the integrated inductor assembly, the two-phase voltage regulator module comprises a top plate assembly, an intermediate assembly and a bottom assembly; the top assembly comprises a top substrate; the intermediate assembly comprises a magnetic core, a first main winding, a second main winding, a first auxiliary winding, a second auxiliary winding, a first auxiliary electrical connector and a second auxiliary electrical connector; and the bottom assembly comprises a first expansion pin and a second expansion pin.

Abstract: A power supply module including a substrate, a magnetic assembly, and an element layer is provided. The magnetic assembly is arranged above a semiconductor switching device, and a common end of the semiconductor switching device is arranged on an upper surface of the switching device and is connected to a winding of the magnetic assembly. The element layer includes an insulator, at least one power chip, a capacitor, a connector, and an upper surface and a lower surface opposite to each other. A laminated wiring is used inside the substrate, and the input capacitor is integrated, and the input capacitor is connected in parallel with the semiconductor switching devices electrically connected in series, thereby reducing the input loop and reducing the parasitic inductance in the input loop.

Abstract: The application discloses an N-phase TLVR integrated inductor, utilizes a main winding and an auxiliary winding with the same structure. Winding pins are arranged on the lower surface of the magnetic core, and coupling achieves a smaller dynamic inductance. An N-phase TLVR module is also provided, wherein a vertical switch device is embedded in a substrate of a bottom assembly. The integrated inductor and capacitor are disposed on the substrate's upper surface, and the inductor connects to the switch via wiring in the substrate. The substrate's lower surface, including an associated capacitor and metal column, is molded into a plastic package. A surface metal wiring layer on the package's lower surface connects to external components. This construction reduces module volume and improves dynamic performance.

Abstract: A power supply module is provided for powering an integrated circuit chip located at a first side of a first carrier board, including: a first-stage power supply unit; and a second-stage power supply unit, where one or more power input terminals of the second-stage power supply unit is electrically connected with one or more corresponding power output terminals of the first-stage power supply unit through a second carrier board; the second carrier board is configured to transmit power from the first-stage power supply unit to the second-stage power supply unit, and the second-stage power supply unit further supplies the power to the integrated circuit chip; one or more power output terminals of the second-stage power supply unit is electrically connected with one or more corresponding power terminals of the integrated circuit chip.

Abstract: The present application discloses an N-phase TLVR integrated inductor, a multi-phase module, an IPM having a small parasitic inductance, and a power supply system of a semiconductor chip. The integrated inductor and IPM constitute a multi-phase module and a power supply system of a semiconductor chip. The N-phase integrated inductor is provided with a copper sheet.

Abstract: A system for providing power to a chip on a board includes a first power supply located on the board and configured to receive a first voltage and provide a second voltage, a second power supply located on the board and electrically connected to the first power supply, and a third power supply located on the board and electrically connected to the first power supply. The second power supply is located at a first side of the chip, the third power supply is located at a second side of the chip, the second power supply provides a third voltage to the chip, and the third power supply provides a fourth voltage to the chip.

Abstract: A voltage regulation module with low thermal resistance is provided. The voltage regulation module includes a top inductor and a bottom assembly. The top inductor includes a magnetic core and a winding, and the winding includes a first winding and a second winding; the bottom assembly comprises a bottom substrate and an IPM unit. The first winding and the second winding both comprise a first pin and a second pin. The first pin and the second pin are both arranged on the bottom surface of the magnetic core and are electrically connected with the bottom substrate; and the inductor. The IPM unit and the bottom substrate are sequentially stacked. The upward thermal resistance of the voltage regulation module is reduced by optimally designing the shape structure of the inductor winding and optimizing the thermal connection between the inductor winding and the IPM unit.

Abstract: The application relates to a VRM (four-phase anti-coupling VRM or VRM) adopting a four-phase anti-coupling inductor technology. By adopting a four-phase anti-coupling inductor technology, the VRM not only has rapid transient performance, but also has high conversion efficiency.

Abstract: The application discloses a power semiconductor wafer of a high-frequency bridge arm integrated with a single crystal wafer. The power semiconductor wafer comprises a substrate and a device structure area, wherein the device structure area comprises a first switch area, a second switch area and a logic circuit area; a DC+ electrode, a DC? electrode and an SW electrode are arranged on the power semiconductor wafer; and the first switch area and the second switch area comprise long-strip-shaped areas parallel to the long edge and are arranged in parallel. Another aspect of the present application further provides a power conversion module, comprising a bridge arm circuit, wherein the bridge arm circuit comprises an outer decoupling capacitor and a power semiconductor wafer, or comprises an outer decoupling capacitor, a laminated decoupling capacitor and a power semiconductor wafer.

Abstract: An inductor assembly includes an integrated inductor and signal assembly; the signal assembly includes a signal connector and a shielding layer; the shielding layer is arranged between the signal assembly and the integrated inductor, so that protecting the signal circuit from interference from the power circuit. A VRM module is provided. The VRM module includes an inductor assembly, a top assembly and a bottom assembly; the inductor assembly includes a magnetic core, a winding, VIN electrical connector and GND electrical connector; the top assembly includes a semiconductor switching device and an input capacitor; and an input power loop including VIN electrical connector, the GND electrical connector and the input capacitor is arranged around at least one part of the magnetic core.

Abstract: A transformer module and a power module are provided. The transformer module includes: a magnetic core, a first winding and a second winding. The magnetic core includes at least one magnetic column at least partially covered by a multi-layer carrier including a plurality of horizontal copper foils and connecting copper foils. Horizontal copper foils are located on horizontal wiring layers, and connecting copper foils are disposed to connect horizontal copper foils. First and second windings surround the magnetic column, and the second winding is located outside the first winding. Both the first and second windings are formed by a horizontal copper foil and a connecting copper foil; two ends of the first winding are electrically connected to first and second surface-mounted pins; two ends of the second winding are electrically connected to third and fourth surface-mounted pins; these pins are disposed on at least one surface of the transformer module.

Abstract: The application provides an inductor structure. The inductor structure comprises a magnetic core, a first winding unit, a second winding unit and an insulating object/insulating composition, wherein the insulating object/insulating composition is pressed and has little rebound at normal temperature, so that the risk that the magnetic core is broken due to rebound of the insulating material during pressing can be effectively reduced; the resistivity of the insulating object/insulating composition is greater than or equal to 2 Mohm·m; and the melting temperature of the insulating object is smaller than the annealing temperature of the magnetic material. When the insulating object is subjected to high-temperature annealing, the insulating object is in at least part of the melting state, and the micropore structure between the particles of the magnetic core material can effectively buffer the volume expansion when the insulating object is melted.

Abstract: The present disclosure provides a manufacturing method of a magnetic element, comprising: forming an insulation layer on an outer side of at least one section of a magnetic column of a magnetic core; forming a first groove on the insulation layer; forming a surface copper and a first hole copper respectively on a surface of the insulation layer and an inner surface of the first groove; dividing the surface copper into a first surface copper close to the magnetic core and a second surface copper away from the magnetic core, and dividing the first hole copper into a first sidewall copper close to the magnetic core and a second sidewall copper away from the magnetic core; drilling a hole on the second insulation layer, and forming a first conductor and a third surface copper respectively in the hole and on the second insulation layer.

Abstract: The present disclosure provides a manufacturing method of a magnetic element, comprising: forming an insulation layer on an outer side of at least one section of a magnetic column of a magnetic core; forming a metal wiring layer on an outer side of the insulation layer through a metallization process; and dividing at least part of the metal wiring layer into a multi-turn metal winding through a mechanically dividing process.

Abstract: A power module and a manufacturing method thereof are disclosed. The power module includes a magnetic component, a bare power chip and a conductive set. The magnetic component includes a first surface and a second surface opposite to each other. The bare power chip is disposed on the magnetic component and includes a third surface and a fourth surface opposite to each other. The conductive set is disposed on the magnetic component and electrically connected with the magnetic component and the bare power chip. The third or fourth surface of the bare power chip is at least partially attached on the first or second surface of the magnetic component, and at least partially included in a projected envelopment of the corresponding first or second surface of the magnetic component, so as to facilitate the magnetic component to support the bare power chip.

Abstract: A high-integration carrier plate and a manufacturing method thereof are disclosed. The carrier plate is configured for a power supply module, the carrier plate includes at least one hollowed-out area, an inductance element is arranged in the hollowed-out area, the inductance element comprises a magnetic core and a winding penetrating through the magnetic core, at least one part of a side wall of the hollowed-out area is provided with a side wall metal piece, the at least one side wall metal piece is used for being electrically connected with one electrostatic potential end of the power supply module, and the inductance element is fixedly connected with the side wall of the hollowed-out area through an insulating bonding medium layer.

Abstract: The application discloses an inductance assembly and an integrated power converter module. An inductance assembly is arranged on a bottom substrate, after integral plastic packaging, a signal electrical connecting piece is formed on the plastic packaging material through electroplating, and the signal electrical connector extends from the top surface of the inductance assembly to the side surface of the plastic packaging material and then extends to the bottom surface of the bottom substrate. The auxiliary winding is added to the second aspect to be coupled with the main winding to form a TLVR inductor for improving the dynamic performance of the VRM module. The VIN electrical connector is arranged between the main winding and the signal electrical connector, the middle portion of the VIN electrical connector is widened, and the transmission signal on the hopping signal interference signal electrical connector of the main winding is effectively avoided.

Abstract: A power chip, includes a metal region; a wafer region. The wafer region includes at least one first partition, forming a first power switch; and at least one second partition, forming a second power switch. The first power switch and the second power switch are electrically connected, a total number of the at least one first partition and the at least one second partition is not less than 3, and the at least one first partition and the at least one second partition are disposed alternatively along a curve.

Abstract: The application discloses an anti-driving interference power module which comprises at least one half-bridge power module. The half-bridge power module comprises a first switch device, a second switch device, a DC positive terminal and a DC negative terminal. The DC positive terminal, the first switch device, the second switch device and the DC negative terminal form a filtering loop which is the same as the second driving loop of the second switch device. According to the application, through the coupling design of the detour direction of the circuit, the driving crosstalk generated by the gate is inhibited for the device which does not need to be turned on, and mistaken opening of driving is avoided; and for the device needing to be opened, the turn-on level driven by the gate is enhanced, so that the reliability of the power module is higher.