Abstract: The present disclosure provides a power supply module and a manufacture method thereof, belonging to the technical field of power electronics. According to the present disclosure, a unibody conductive member is employed to connect a conductive part in a passive element to a conductive layer in a substrate. This is advantageous in simplifying the structure of the passive element, and enabling a structurally compact power supply module at a reduced cost. Additionally, stacking the passive element with the substrate may allow for a further compact structure for the power supply module, improving the space utilization rate for the power supply module, while enhancing the external appearance of the power supply module with tidiness, simplicity and aesthetics.

Abstract: The present disclosure provides a power supply module and a manufacture method thereof, belonging to the technical field of power electronics. According to the present disclosure, a unibody conductive member is employed to connect a conductive part in a passive element to a conductive layer in a substrate. This is advantageous in simplifying the structure of the passive element, and enabling a structurally compact power supply module at a reduced cost. Additionally, stacking the passive element with the substrate may allow for a further compact structure for the power supply module, improving the space utilization rate for the power supply module, while enhancing the external appearance of the power supply module with tidiness, simplicity and aesthetics.

Abstract: The present disclosure provides a semiconductor chip power supply system, including: a semiconductor chip including: a first data processing function area and a first power converter control area, the first data processing function area and the first power converter control area being formed on a first semiconductor substrate of the semiconductor chip; and a first power converter power stage located outside the first semiconductor substrate and electrically connected to the first power converter control area and the first data processing function area; wherein the first power converter control area controls the first power converter power stage to supply power to the first data processing function area.

Abstract: The present disclosure provides an alternatingly-switched parallel circuit, an integrated power module and an integrated power package. The alternatingly-switched parallel circuit includes a first bridge arm and a second bridge arm at least partly formed in a chip containing a plurality of first cell groups and a plurality of second cell groups. The plurality of first cell groups are configured to form the first upper bridge-arm switch and the plurality of second cell groups are configured to form the second upper bridge-arm switch, or the plurality of first cell groups are configured to form the first lower bridge-arm switch and the plurality of second cell groups are configured to form the second lower bridge-arm switch. The plurality of first cell groups and the plurality of second cell groups are switched on and off alternatingly.

Abstract: A transformer module and a power module are provided. The transformer module includes: a magnetic core, a first winding and a second winding. The magnetic core includes at least one magnetic column at least partially covered by a multi-layer carrier including a plurality of horizontal copper foils and connecting copper foils. Horizontal copper foils are located on horizontal wiring layers, and connecting copper foils are disposed to connect horizontal copper foils. First and second windings surround the magnetic column, and the second winding is located outside the first winding. Both the first and second windings are formed by a horizontal copper foil and a connecting copper foil; two ends of the first winding are electrically connected to first and second surface-mounted pins; two ends of the second winding are electrically connected to third and fourth surface-mounted pins; these pins are disposed on at least one surface of the transformer module.

Abstract: The present disclosure provides a transformer module and a power module, wherein the transformer module comprises: a magnetic core, a first metal winding and a second metal winding. A first wiring layer, a first insulating layer and a second wiring layer are sequentially disposed on the magnetic core from the outside to the inside; the first metal winding is formed on the first wiring layer and winded around the magnetic core in a foil structure; the first insulating layer is at least partially covered by the first metal winding; a second metal winding is formed on the second wiring layer and winded around the magnetic core in a foil structure, wherein the second metal winding is at least partially covered by the first insulating layer, and is at least partially covered by the first metal winding.

Abstract: A power integrated module, including at least one first bridge formed in a chip, wherein the first bridge includes: a first upper bridge switch, formed by a plurality of first sub switches formed in the chip connected in parallel, and including a first, a second and a control end; a first lower bridge switch, formed by a plurality of second sub switches formed in the chip connected in parallel, and including a first, a second and a control end; a first electrode, connected to the first end of the first upper bridge switch; a second electrode, connected to the second end of the first lower bridge switch; and a third electrode, connected to the second end of the first upper bridge switch and the first end of the first lower bridge switch, wherein the first, the second and the third electrode are bar-type electrodes arranged side by side.

Abstract: The present disclosure provides a semiconductor chip power supply system, including: a semiconductor chip including: a first data processing function area and a first power converter control area, the first data processing function area and the first power converter control area being formed on a first semiconductor substrate of the semiconductor chip; and a first power converter power stage located outside the first semiconductor substrate and electrically connected to the first power converter control area and the first data processing function area; wherein the first power converter control area controls the first power converter power stage to supply power to the first data processing function area.

Abstract: The present disclosure provides an alternatingly-switched parallel circuit, an integrated power module and an integrated power package. The alternatingly-switched parallel circuit includes a first bridge arm and a second bridge arm at least partly formed in a chip containing a plurality of first cell groups and a plurality of second cell groups The plurality of first cell groups are configured to form the first upper bridge-arm switch and the plurality of second cell groups are configured to form the second upper bridge-arm switch, or the plurality of first cell groups are configured to form the first lower bridge-arm switch and the plurality of second cell groups are configured to form the second lower bridge-arm switch. The plurality of first cell groups and the plurality of second cell groups are switched on and off alternatingly.

Abstract: A converter module includes: a system board; and an isolated rectifier unit connected with the system board via at least one pin, the isolated rectifier unit including: a system board; a circuit module; and an isolated rectifier unit arranged adjacent to the circuit module and connected with the system board; wherein the isolated rectifier unit includes: a magnetic core comprising at least one core column parallel to the system board and two cover plates provided at both ends of the core column; and multiple carrier board units provided between the two cover plates and perpendicular to the system board, wherein each of the carrier board units comprises at least one via hole, at least one primary winding, at least one secondary winding and at least one switch connected with the at least one secondary winding.

Abstract: The disclosure provides a system of providing power to a chip on a mainboard, including: a preceding-stage power supply, located on a mainboard, and configured to receive a first DC voltage and to provide a second DC voltage, wherein the first DC voltage is greater than the second DC voltage; and a first post-stage power supply and a second post-stage power supply, located on the mainboard, to receive the second DC voltage, the first post-stage power supply is disposed at a first side of the chip, the second post-stage power supply is disposed at a second side of the chip, the first post-stage power supply provides a third DC voltage to the chip, the second DC voltage is greater than the third DC voltage, the second post-stage power supply provides a fourth DC voltage to the chip, and the second DC voltage is greater than the fourth DC voltage.

Abstract: A converter module includes: a system board; and an isolated rectifier unit connected with the system board via at least one pin, the isolated rectifier unit including: a system board; a circuit module; and an isolated rectifier unit arranged adjacent to the circuit module and connected with the system board; wherein the isolated rectifier unit includes: a magnetic core comprising at least one core column parallel to the system board and two cover plates provided at both ends of the core column; and multiple carrier board units provided between the two cover plates and perpendicular to the system board, wherein each of the carrier board units comprises at least one via hole, at least one primary winding, at least one secondary winding and at least one switch connected with the at least one secondary winding.

Abstract: The present disclosure provides an alternatingly-switched parallel circuit, an integrated power module and an integrated power package. The alternatingly-switched parallel circuit includes a first bridge arm and a second bridge arm at least partly formed in a chip containing a plurality of first cell groups and a plurality of second cell groups The plurality of first cell groups are configured to form the first upper bridge-arm switch and the plurality of second cell groups are configured to form the second upper bridge-arm switch, or the plurality of first cell groups are configured to form the first lower bridge-arm switch and the plurality of second cell groups are configured to form the second lower bridge-arm switch. The plurality of first cell groups and the plurality of second cell groups are switched on and off alternatingly.

Abstract: A converter module includes: a system board; and an isolated rectifier unit connected with the system board via at least one pin, the isolated rectifier unit including: a magnetic core including at least one core column parallel to the system board and two cover plates provided at both ends of the core column; and multiple carrier board units provided between the two cover plates and perpendicular to the system board, wherein the carrier board unit includes at least one via hole, at least one primary winding and at least one secondary winding; and wherein the at least one core column passes through the via hole of the carrier board unit, the pin is provided at one side of at least one of the carrier board units close to the system board and configured to connect the carrier board units with the system board.

Abstract: A power chip includes: a first power switch, formed in a wafer region and having a first and a second metal electrodes; a second power switch, formed in the wafer region and having a third and a fourth metal electrodes, wherein the first and second power switches respectively constitute an upper bridge arm and a lower bridge arm of a bridge circuit, and the first and second power switches are alternately arranged along a first direction; and a metal region, at least including a first metal layer, a second metal layer and a third metal layer that are stacked, each metal layer including a first to a third strip electrodes, and strip electrodes with the same voltage potential in two adjacent metal layers are electrically coupled, wherein a routing direction of the strip electrode in the first metal layer is substantially perpendicular to the first direction.

Abstract: The present disclosure provides a semiconductor chip power supply system, including: a semiconductor chip including: a first data processing function area and a first power converter control area, the first data processing function area and the first power converter control area being formed on a first semiconductor substrate of the semiconductor chip; and a first power converter power stage located outside the first semiconductor substrate and electrically connected to the first power converter control area and the first data processing function area; wherein the first power converter control area controls the first power converter power stage to supply power to the first data processing function area.

Abstract: A power module and a manufacturing method thereof are disclosed. The power module includes a magnetic component, a bare power chip and a conductive set. The magnetic component includes a first surface and a second surface opposite to each other. The bare power chip is disposed on the magnetic component and includes a third surface and a fourth surface opposite to each other. The conductive set is disposed on the magnetic component and electrically connected with the magnetic component and the bare power chip. The third or fourth surface of the bare power chip is at least partially attached on the first or second surface of the magnetic component, and at least partially included in a projected envelopment of the corresponding first or second surface of the magnetic component, so as to facilitate the magnetic component to support the bare power chip.

Abstract: A power chip includes: a first power switch, formed in a wafer region and having a first metal electrode and a second metal electrode; a second power switch, formed in the wafer region and having a third metal electrode and a fourth metal electrode, wherein the first and second power switches respectively constitute an upper bridge arm and a lower bridge arm of a bridge circuit, and the first and second power switches are alternately arranged along at least one dimension direction; and a metal region, at least including a first metal layer, a second metal layer and a third metal layer that are stacked in sequence, each metal layer including a first strip electrode, a second strip electrode and a third strip electrode, and strip electrodes with the same voltage potential in two adjacent metal layers are electrically coupled.

Abstract: A transformer unit and a power converter circuit are provided. The transformer unit includes: a first secondary wiring layer including a first secondary winding; a second secondary wiring layer adjacent to the first secondary wiring layer and including a second secondary winding, a first end of the second secondary winding being connected to a first end of the first secondary winding via at least one first via hole; and a plurality of primary wiring layers including a primary winding, the first secondary wiring layer and the second secondary wiring layer being disposed between the plurality of primary wiring layers, wherein at least one of the first via hole is disposed within a projection of the primary winding in the plurality of primary wiring layers.

Abstract: A power chip and a bridge circuit are disclosed in the present disclosure. The power chip includes a metal region and a wafer region, wherein the power chip further includes: a first power switch, formed in the wafer region; and a second power switch, formed in the wafer region, wherein the first and second power switches constitute an upper bridge arm and a lower bridge arm of a bridge circuit, respectively. At least one of the upper bridge arm and the lower bridge arm includes two or more power switches which are connected in parallel with each other, and the first and second power switches are arranged alternatively along at least one dimension direction.