Abstract: A multi-chip package power module according to the present disclosure, comprising: multiple chips, including a first chip and a second chip that are arranged adjacently; a first conductive member, at least partially arranged between the first chip and the second chip, and a second conductive member, at least partially arranged between the first chip and the second chip, where the first conductive member is electrically connected to a power pin of the first chip, the second conductive member is electrically connected to a power pin of the second chip, and the multiple chips, the first conductive member and the second conductive member are all embedded in an insulating package material. For the multi-chip package power module according to the present disclosure, the power output current of the chip can be directly led out from two opposite sides through the conductive member to obtain a symmetrical path.

Abstract: The invention provides a conversion circuit for converting input voltage into output voltage, including: a full-bridge rectifier circuit including first and second bridge arms connected in parallel and electrically connected between first and second ends of the output voltage; a first switch branch electrically connected between the first end of the input voltage and the first end of the output voltage, and including first and second switches connected in series to form a first connection node; a first resonant unit electrically connected between the first connection point and midpoint of the first bridge arm; and a first transformer including a first primary winding connected in series with the first resonant unit; and a first secondary winding connected between midpoint of the first bridge arm and midpoint of the second bridge arm. The conversion circuit of the invention improves conversion efficiency while maintaining smaller voltage stress on switches.

Abstract: The invention provides a conversion circuit for converting an input voltage into an output voltage, including: a first full-wave rectifier circuit including a first branch and a second branch connected in parallel, each including a winding and a rectifier switch connected in series to form a midpoint; a first switch branch including a first switch and a second switch connected in series to form a first connection node; and a first resonant unit connected between the first connection node and a midpoint of the second branch, wherein the first resonant unit is not connected in series to the windings of the transformer. The conversion circuit of the invention improves conversion efficiency while maintaining smaller voltage stress on switches.

Abstract: The invention provides a conversion circuit for converting input voltage into output voltage, including: a full-wave rectifier circuit including first and second branches connected in parallel, and each including a secondary winding and a rectifier switch; a first switch branch connected to midpoint of the first branch, and including first to fourth switches connected in series; a first resonant unit connected between connection node of the first and second switches and midpoint of the second branch; a second resonant unit connected between connection node of the third and fourth switches and midpoint of the second branch; a first primary winding connected in series to the first resonant unit; and a capacitor connected between connection node of the second and third switches and midpoint of the second branch. The conversion circuit of the invention improves conversion efficiency while maintaining smaller voltage stress on switches.

Abstract: The present disclosure provides a semiconductor chip power supply system, including: a semiconductor chip including: a first data processing function area and a first power converter control area formed on a first semiconductor substrate of the semiconductor chip; and a first power converter power stage located outside the first semiconductor substrate and electrically connected to the first power converter control area and the first data processing function area; wherein the first power converter control area controls the first power converter power stage to supply power to the first data processing function area, and the first power converter control area adjusts the output voltage of the first power converter power stage according to information corresponding to a working status of the first data processing function area.

Abstract: The present disclosure provides a power supply module and a manufacture method thereof, belonging to the technical field of power electronics. According to the present disclosure, a unibody conductive member is employed to connect a conductive part in a passive element to a conductive layer in a substrate. This is advantageous in simplifying the structure of the passive element, and enabling a structurally compact power supply module at a reduced cost. Additionally, stacking the passive element with the substrate may allow for a further compact structure for the power supply module, improving the space utilization rate for the power supply module, while enhancing the external appearance of the power supply module with tidiness, simplicity and aesthetics.

Abstract: The present disclosure provides a power supply module. The power supply module is applied to an integrated circuit chip assembly which includes a first carrier board and an integrated circuit chip located at a first side of the first carrier board; the power supply module includes: a second carrier board; a first-stage power supply unit; and a second-stage power supply unit, power input terminals of the second-stage power supply unit are electrically connected with corresponding power output terminals of the first-stage power supply unit through the second carrier board; power output terminals of the second-stage power supply unit are electrically connected with corresponding power terminals of the integrated circuit chip, a projection of the second-stage power supply unit on a first plane is at least partially located within a projection range of the integrated circuit chip on the first plane, the first plane is parallel to the first carrier board.

Abstract: A power integrated module, including at least one first bridge formed in a chip, wherein the first bridge includes: a first upper bridge switch, formed by a plurality of first sub switches formed in the chip connected in parallel, and including a first, a second and a control end; a first lower bridge switch, formed by a plurality of second sub switches formed in the chip connected in parallel, and including a first, a second and a control end; a first electrode, connected to the first end of the first upper bridge switch; a second electrode, connected to the second end of the first lower bridge switch; and a third electrode, connected to the second end of the first upper bridge switch and the first end of the first lower bridge switch, wherein the first, the second and the third electrode are bar-type electrodes arranged side by side.

Abstract: The present disclosure provides an alternatingly-switched parallel circuit, an integrated power module and an integrated power package. The alternatingly-switched parallel circuit includes a first bridge arm and a second bridge arm at least partly formed in a chip containing a plurality of first cell groups and a plurality of second cell groups. The plurality of first cell groups are configured to form the first upper bridge-arm switch and the plurality of second cell groups are configured to form the second upper bridge-arm switch, or the plurality of first cell groups are configured to form the first lower bridge-arm switch and the plurality of second cell groups are configured to form the second lower bridge-arm switch. The plurality of first cell groups and the plurality of second cell groups are switched on and off alternatingly.

Abstract: A power chip includes: a first power switch, formed in a wafer region and having a first and a second metal electrodes; a second power switch, formed in the wafer region and having a third and a fourth metal electrodes, wherein the first and second power switches respectively constitute an upper bridge arm and a lower bridge arm of a bridge circuit, and the first and second power switches are alternately arranged; and a metal region, at least including a first metal layer and a second metal layer that are stacked, each metal layer including a first to a third electrodes, and electrodes with the same voltage potential in the metal layers are electrically coupled.

Abstract: The present disclosure provides a semiconductor chip power supply system, including: a semiconductor chip including: a first data processing function area and a first power converter control area formed on a first semiconductor substrate of the semiconductor chip; and a first power converter power stage located outside the first semiconductor substrate and electrically connected to the first power converter control area and the first data processing function area; wherein the first power converter control area controls the first power converter power stage to supply power to the first data processing function area, and the first power converter control area adjusts the output voltage of the first power converter power stage according to information corresponding to a working status of the first data processing function area.

Abstract: The disclosure provides a system of providing power to a chip on a mainboard, including: a first power supply, located on the mainboard, and configured to receive a first voltage and to provide a second voltage; and a second power supply and a third power supply, located on the mainboard, wherein the second power supply and the third power supply are electrically connected to the first power supply; so as to receive the second voltage, the second power supply is disposed at a first side of the chip, the third power supply is disposed at a second side of the chip, the second power supply provides a third voltage to the chip, and the third power supply provides a fourth voltage to the chip.

Abstract: A power chip, includes a metal region; a wafer region. The wafer region includes at least one first partition, forming a first power switch; and at least one second partition, forming a second power switch. The first power switch and the second power switch are electrically connected, a total number of the at least one first partition and the at least one second partition is not less than 3, and the at least one first partition and the at least one second partition are disposed alternatively along a curve.

Abstract: The present disclosure provides a magnetic element, a manufacturing method of a magnetic element, and a power module. The magnetic element includes: a magnetic core; and a metal wiring layer, where the metal wiring layer is flat wound on a surface of at least one section of a magnetic column of the magnetic core, the metal wiring layer includes a vertical portion and a horizontal portion, and at least part of the vertical portion forms a multi-turn metal winding by mechanically dividing.

Abstract: A power chip includes: a first power switch, formed in a wafer region and having a first and a second metal electrodes; a second power switch, formed in the wafer region and having a third and a fourth metal electrodes, wherein the first and second power switches respectively constitute an upper bridge arm and a lower bridge arm of a bridge circuit, and the first and second power switches are alternately arranged along a first direction; and a metal region, at least including a first metal layer, a second metal layer and a third metal layer that are stacked, each metal layer including a first to a third strip electrodes, and strip electrodes with the same voltage potential in two adjacent metal layers are electrically coupled, wherein a routing direction of the strip electrode in the first metal layer is substantially perpendicular to the first direction.

Abstract: The present disclosure provides a semiconductor chip power supply system, including: a semiconductor chip including: a first data processing function area and a first power converter control area, the first data processing function area and the first power converter control area being formed on a first semiconductor substrate of the semiconductor chip; and a first power converter power stage located outside the first semiconductor substrate and electrically connected to the first power converter control area and the first data processing function area; wherein the first power converter control area controls the first power converter power stage to supply power to the first data processing function area.

Abstract: The disclosure provides a system of providing power to a chip on a mainboard, including: a preceding-stage power supply, located on a mainboard, and configured to receive a first DC voltage and to provide a second DC voltage, wherein the first DC voltage is greater than the second DC voltage; and a first post-stage power supply and a second post-stage power supply, located on the mainboard, to receive the second DC voltage, the first post-stage power supply is disposed at a first side of the chip, the second post-stage power supply is disposed at a second side of the chip, the first post-stage power supply provides a third DC voltage to the chip, the second DC voltage is greater than the third DC voltage, the second post-stage power supply provides a fourth DC voltage to the chip, and the second DC voltage is greater than the fourth DC voltage.

Abstract: The disclosure provides a system of providing power to a chip on a mainboard. The system comprises at least one preceding-stage power supply module located on a surface of a mainboard, being DC-DC converters, and configured to receive a first DC voltage and to provide a second DC voltage; and at least one post-stage power supply module located on the same surface of the preceding-stage power supply module of the mainboard. Wherein the post-stage power supply module is electrically connected to the preceding-stage power supply module to receive the second DC voltage, the preceding-stage power supply module and the post-stage power supply module are disposed at same side of the chip, the post-stage power supply module provides a third DC voltage to the chip. A profile projection of the preceding-stage power supply module and the corresponding post-stage power supply module are overlapped with each other over 50%.

Abstract: A system of providing power including: a preceding-stage power supply module, a post-stage power supply module and a load, connected in sequence; a projection on the mainboard of a smallest envelope area formed by contour lines of the preceding-stage power supply module and the load at least partially overlaps with a projection of the post-stage power supply module; the preceding-stage power supply module includes a plurality of sets of preceding-stage output pins and preceding-stage ground pins alternately arranged to form a first rectangular envelope area, and the load is disposed on a side of a long side of the first rectangular envelope area; and the load comprises a load input pin and a load ground pin forming a second rectangular envelope area, and a center line of the first rectangular envelope area and the second rectangular envelope area is perpendicular to the long side of the first rectangular envelope area.

Abstract: A power chip and a bridge circuit are disclosed in the present disclosure. The power chip includes a metal region and a wafer region, wherein the power chip further includes: a first power switch, formed in the wafer region; and a second power switch, formed in the wafer region, wherein the first and second power switches constitute an upper bridge arm and a lower bridge arm of a bridge circuit, respectively. At least one of the upper bridge arm and the lower bridge arm includes two or more power switches which are connected in parallel with each other, and the first and second power switches are arranged alternatively along at least one dimension direction.