Patents by Inventor Xiaoqiang Zeng
Xiaoqiang Zeng has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 10232392Abstract: A sealant applying device and a working method thereof, and a sealant applying apparatus are disclosed. The sealant applying device includes a nozzle; the nozzle includes an air inlet portion and a sealant outflow portion, a switch plate is arranged below the sealant outflow portion, the switch plate includes a plate body configured to horizontally move between a first state and a second state, one end of the plate body is provided with a through hole, and a discharge portion is provided at a position corresponding to the through hole and on a side of the plate body facing away from the sealant outflow portion.Type: GrantFiled: November 1, 2016Date of Patent: March 19, 2019Assignees: BOE TECHNOLOGY GROUP CO., LTD., BEIJING BOE DISPLAY TECHNOLOGY CO., LTD.Inventors: Wenchao Feng, Xiaoqiang Zeng, Hongyu Zhang, Lei Xing
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Publication number: 20180093285Abstract: A sealant applying device and a working method thereof, and a sealant applying apparatus are disclosed. The sealant applying device includes a nozzle: the nozzle includes an air inlet portion and a sealant outflow portion, a switch plate is arranged below the sealant outflow portion, the switch plate includes a plate body configured to horizontally move between a first state and a second state, one end of the plate body is provided with a through hole, and a discharge portion is provided at a position corresponding to the through hole and on a side of the plate body facing away from the sealant outflow portion.Type: ApplicationFiled: November 1, 2016Publication date: April 5, 2018Inventors: Wenchao FENG, Xiaoqiang ZENG, Hongyu ZHANG, Lei XING
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Patent number: 9812613Abstract: A light-emitting diode (LED) includes: an epitaxial structure having an upper and a lower surface, wherein the upper surface comprises a light-emitting surface; at least one insulating layer over the lower surface; and an electrode pad layer over the at least one insulating layer; wherein: the electrode pad layer comprises a P electrode region and an N electrode region; and the at least one insulating layer is configured to adjust a distribution of the P and N electrode regions over the electrode pad layer.Type: GrantFiled: October 8, 2016Date of Patent: November 7, 2017Assignee: XIAMEN SANAN OPTOELECTRONICS TECHNOLOGY CO., LTD.Inventors: Shaohua Huang, Xiaoqiang Zeng, Chih-Wei Chao
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Patent number: 9666757Abstract: A vertical LED with current blocking structure and its associated fabrication method involve an anisotropic conductive material and a conductive substrate with concave-convex structure. The anisotropic conductive material forms a bonding layer with vertical conduction and horizontal insulation between the concave-convex substrate and the light-emitting epitaxial layer, thereby forming a vertical LED with current blocking function.Type: GrantFiled: December 31, 2014Date of Patent: May 30, 2017Assignee: XIAMEN SANAN OPTOELECTRONICS TECHNOLOGY CO., LTD.Inventors: Xiaoqiang Zeng, Chih-Wei Chao, Shunping Chen, Jianjian Yang, Daquan Lin
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Publication number: 20170084808Abstract: A surface-mounted light-emitting device is fabricated by epitaxial growth: forming the LED epitaxial structure over a growth substrate through epitaxial growth; chip fabrication: determining P and N electrode regions and an isolating region over the LED epitaxial structure surface and fabricating the P and N electrode pads and the insulator over the P and N electrode regions and the isolating region, wherein the P and N electrode pads have sufficient thicknesses to support the LED epitaxial structure, and the insulator is formed between the P and N electrode pads to prevent the P and N electrode pads from a short circuit; removing the growth substrate and unitizing the LED epitaxial structure to form the chip; and SMT packaging: providing the supporting substrate and directly mounting the P and N electrode pads of the chip over the supporting substrate through SMT packaging to thereby form the surface-mounted LED light-emitting device.Type: ApplicationFiled: December 3, 2016Publication date: March 23, 2017Applicant: XIAMEN SANAN OPTOELECTRONICS TECHNOLOGY CO., LTD.Inventors: SHAOHUA HUANG, XIAOQIANG ZENG, CHIH-WEI CHAO
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Publication number: 20170025580Abstract: A light-emitting diode (LED) includes: an epitaxial structure having an upper and a lower surface, wherein the upper surface comprises a light-emitting surface; at least one insulating layer over the lower surface; and an electrode pad layer over the at least one insulating layer; wherein: the electrode pad layer comprises a P electrode region and an N electrode region; and the at least one insulating layer is configured to adjust a distribution of the P and N electrode regions over the electrode pad layerType: ApplicationFiled: October 8, 2016Publication date: January 26, 2017Applicant: XIAMEN SANAN OPTOELECTRONICS TECHNOLOGY CO., LTD.Inventors: SHAOHUA HUANG, XIAOQIANG ZENG, CHIH-WEI CHAO
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Patent number: 9537057Abstract: A surface-mounted light-emitting device includes: a LED epitaxial structure having two opposite surfaces, wherein the first surface is a light-emitting surface; P and N electrode pads over the second surface of the epitaxial structure, which have sufficient thickness to support the LED epitaxial structure, and the P and N electrode pads have two opposite surfaces respectively, in which, the first surface is approximate to the LED epitaxial structure; an insulator between the P and N pads to prevent the P and N electrode pads from short circuit; and the P and N electrode pads are directly applied in the SMT package. Some embodiments allow structural changes compared with conventional SMT package type by directly mounting the chip over the supporting substrate through an electrode pad. In addition, soldering is followed after the chip process without package step, which is mainly applicable to flip-chip LED device.Type: GrantFiled: June 24, 2015Date of Patent: January 3, 2017Assignee: XIAMEN SANAN OPTOELECTRONICS TECHNOLOGY CO., LTD.Inventors: Shaohua Huang, Xiaoqiang Zeng, Chih-Wei Chao
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Patent number: 9537048Abstract: The present invention discloses a vertical AC LED element and fabrication method thereof, wherein the vertical AC LED element comprises a conductive substrate (102); a light-emitting module on the conductive substrate (102), including two horizontally arranged in parallel and mutually-isolated LEDs; wherein the first and second LEDs include a first semiconductor layer (111), a light-emitting layer (112) and a second semiconductor layer (113) from top down; a first insulating layer (131) is arranged between the second semiconductor layer (113) of the first LED and the conductive substrate (102) for mutual isolation; an ohmic contact is formed between the second semiconductor layer (113) of the second LED and the conductive substrate (102); a first conductive structure that connects the first semiconductor layer (111) of the first LED, the second semiconductor layer (113) of the second LED and the conductive substrate (102); and a second conductive structure that connects the second semiconductor layer (113) ofType: GrantFiled: March 21, 2013Date of Patent: January 3, 2017Assignee: XIAMEN SANAN OPTOELECTRONICS TECHNOLOGY CO., LTD.Inventors: Shunping Chen, Xiaoqiang Zeng, Shaohua Huang, Qunfeng Pan, Jyh-Chiarng Wu
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Patent number: 9472726Abstract: An integrated LED light-emitting device includes: at least two mutually-isolated LED light-emitting epitaxial units having an upper and a lower surface, in which, the upper surface is a light-emitting surface; an electrode pad layer over the lower surface of the LED light-emitting epitaxial unit, with sufficient thickness for supporting the LED epitaxial unit and connecting to each LED light-emitting epitaxial unit to form a connection circuit plane with no height difference; and the electrode pad layer is divided into a P electrode region and an N electrode region. The LED light-emitting epitaxial units constitute a series, parallel or series-parallel circuit. Embodiments disclosed herein can effectively improve the problems of package welding, electrode shading and poor wiring stability.Type: GrantFiled: June 24, 2015Date of Patent: October 18, 2016Assignee: XIAMEN SANAN OPTOELECTRONICS TECHNOLOGY CO., LTD.Inventors: Shaohua Huang, Xiaoqiang Zeng, Chih-Wei Chao
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Publication number: 20160161773Abstract: The present disclosure relates to a liquid crystal (LC) display field and discloses an LC pump. The LC pump may include a case; a second linear container arranged within the case; and a nozzle arranged at the bottom of the case. The second linear container may include an LC delivery channel and at least two LC inlets. And LC may flow through the LC inlets and the LC delivery channel sequentially and then may be ejected from the nozzle.Type: ApplicationFiled: July 16, 2015Publication date: June 9, 2016Applicants: BEIJING BOE DISPLAY TECHNOLOGY CO., LTD., BOE TECHNOLOGY GROUP CO., LTD.Inventors: Tengchao JIN, Liang HU, Xiaoqiang ZENG, Liang MA
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Patent number: 9269698Abstract: This invention discloses an AC-type vertical light emitting element and fabrication method thereof, which achieves polarity reversal of two LEDs via regional laser stripping and die bonding. The two LEDs are placed on a conductive substrate (e.g. Si substrate); therefore, the bonding pads of the two LEDs are on the back of the conductive substrate and the light emitting surfaces of the two LEDs, thus overcoming such problems of low light emitting efficiency and high thermal resistance of the traditional lateral structure.Type: GrantFiled: December 21, 2012Date of Patent: February 23, 2016Assignee: XIAMEN SANAN OPTOELECTRONICS TECHNOLOGY CO., LTD.Inventors: Xiaoqiang Zeng, Shunping Chen, Shaohua Huang, Qunfeng Pan
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Patent number: 9190569Abstract: A flip-chip light emitting diode (LED) includes: a substrate having a P-type pad electrode and an N-type pad electrode; a light-emitting epitaxial layer flip-chip mounted over the substrate, including, from top down, an n-type semiconductor layer, an active layer, and a p-type semiconductor layer. The n-type semiconductor layer is divided into a light-emitting region, an isolation region, and an electrode region. The light-emitting region and the electrode region are electrically isolated by the isolation region. The active layer and the p-type semiconductor layer are below the light-emitting region. The p-type semiconductor layer connects with the P-type pad electrode. The electrode region of the n-type semiconductor layer connects with the N-type pad electrode.Type: GrantFiled: December 25, 2014Date of Patent: November 17, 2015Assignee: Xiamen Sanan Optoelectronics Technology Co., Ltd.Inventors: Xiaoqiang Zeng, Shunping Chen, Qunfeng Pan, Shaohua Huang
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Publication number: 20150318444Abstract: An integrated LED light-emitting device includes: at least two mutually-isolated LED light-emitting epitaxial units having an upper and a lower surface, in which, the upper surface is a light-emitting surface; an electrode pad layer over the lower surface of the LED light-emitting epitaxial unit, with sufficient thickness for supporting the LED epitaxial unit and connecting to each LED light-emitting epitaxial unit to form a connection circuit plane with no height difference; and the electrode pad layer is divided into a P electrode region and an N electrode region. The LED light-emitting epitaxial units constitute a series, parallel or series-parallel circuit. Embodiments disclosed herein can effectively improve the problems of package welding, electrode shading and poor wiring stability.Type: ApplicationFiled: June 24, 2015Publication date: November 5, 2015Applicant: XIAMEN SANAN OPTOELECTRONICS TECHNOLOGY CO., LTD.Inventors: SHAOHUA HUANG, XIAOQIANG ZENG, CHIH-WEI CHAO
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Publication number: 20150295142Abstract: A surface-mounted light-emitting device includes: a LED epitaxial structure having two opposite surfaces, wherein the first surface is a light-emitting surface; P and N electrode pads over the second surface of the epitaxial structure, which have sufficient thickness to support the LED epitaxial structure, and the P and N electrode pads have two opposite surfaces respectively, in which, the first surface is approximate to the LED epitaxial structure; an insulator between the P and N pads to prevent the P and N electrode pads from short circuit; and the P and N electrode pads are directly applied in the SMT package. Some embodiments allow structural changes compared with conventional SMT package type by directly mounting the chip over the supporting substrate through an electrode pad. In addition, soldering is followed after the chip process without package step, which is mainly applicable to flip-chip LED device.Type: ApplicationFiled: June 24, 2015Publication date: October 15, 2015Applicant: XIAMEN SANAN OPTOELECTRONICS TECHNOLOGY CO., LTD.Inventors: SHAOHUA HUANG, XIAOQIANG ZENG, CHIH-WEI CHAO
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Patent number: 9159895Abstract: A vertical high-voltage light emitting device and a manufacturing method thereof. Polarities of two adjacent light emitting diodes (LEDs) are reversed by means of area laser stripping and die bonding, and the two diodes whose polarities are reversed are disposed on an insulating substrate comprising a bonding metal layer (320). A conductive wire (140) is distributed on a surface of the light emitting device, so that a single LED unit (330) has a vertical structure, and multiple LEDs are connected in series to form a high-voltage LED, thereby solving the problems of low light emitting efficiency and large thermal resistance of a horizontal structure.Type: GrantFiled: March 19, 2013Date of Patent: October 13, 2015Assignee: Xiamen Sanan Optoelectronics Technology Co., Ltd.Inventors: Xiaoqiang Zeng, Shunping Chen, Shaohua Huang, Qunfeng Pan, Jyh-Chiarng Wu
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Publication number: 20150144974Abstract: The present invention discloses a vertical AC LED element and fabrication method thereof, wherein the vertical AC LED element comprises a conductive substrate (102); a light-emitting module on the conductive substrate (102), including two horizontally arranged in parallel and mutually-isolated LEDs; wherein the first and second LEDs include a first semiconductor layer (111), a light-emitting layer (112) and a second semiconductor layer (113) from top down; a first insulating layer (131) is arranged between the second semiconductor layer (113) of the first LED and the conductive substrate (102) for mutual isolation; an ohmic contact is formed between the second semiconductor layer (113) of the second LED and the conductive substrate (102); a first conductive structure that connects the first semiconductor layer (111) of the first LED, the second semiconductor layer (113) of the second LED and the conductive substrate (102); and a second conductive structure that connects the second semiconductor layer (113) ofType: ApplicationFiled: March 21, 2013Publication date: May 28, 2015Inventors: Shunping Chen, Xiaoqiang Zeng, Shaohua Huang, Qunfeng Pan, Jyh-Chiarng Wu
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Publication number: 20150115295Abstract: A flip-chip light emitting diode (LED) includes: a substrate having a P-type pad electrode and an N-type pad electrode; a light-emitting epitaxial layer flip-chip mounted over the substrate, including, from top down, an n-type semiconductor layer, an active layer, and a p-type semiconductor layer. The n-type semiconductor layer is divided into a light-emitting region, an isolation region, and an electrode region. The light-emitting region and the electrode region are electrically isolated by the isolation region. The active layer and the p-type semiconductor layer are below the light-emitting region. The p-type semiconductor layer connects with the P-type pad electrode. The electrode region of the n-type semiconductor layer connects with the N-type pad electrode.Type: ApplicationFiled: December 25, 2014Publication date: April 30, 2015Applicant: XIAMEN SANAN OPTOELECTRONICS TECHNOLOGY CO., LTD.Inventors: XIAOQIANG ZENG, SHUNPING CHEN, QUNFENG PAN, SHAOHUA HUANG
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Publication number: 20150108534Abstract: A vertical LED with current blocking structure and its associated fabrication method involve an anisotropic conductive material and a conductive substrate with concave-convex structure. The anisotropic conductive material forms a bonding layer with vertical conduction and horizontal insulation between the concave-convex substrate and the light-emitting epitaxial layer, thereby forming a vertical LED with current blocking function.Type: ApplicationFiled: December 31, 2014Publication date: April 23, 2015Applicant: XIAMEN SANAN OPTOELECTRONICS TECHNOLOGY CO., LTD.Inventors: XIAOQIANG ZENG, CHIH-WEI CHAO, SHUNPING CHEN, JIANJIAN YANG, DAQUAN LIN
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Publication number: 20150033696Abstract: A system includes a turbine casing assembly that includes an outer shell and an inner shell positioned substantially concentrically within the outer shell. The inner shell includes an inner surface facing away from the outer shell and an outer surface facing toward the outer shell, and the outer surface has one or more false flanges. At least one of the one or more false flanges includes a first surface protruding from the outer surface and facing the outer shell, and a flow diverting portion extending between the first surface and the outer surface of the inner shell. The flow diverting portion includes a first portion that diverges in a first circumferential direction between the first surface and the outer surface.Type: ApplicationFiled: July 31, 2013Publication date: February 5, 2015Applicant: General Electric CompanyInventors: Brian David Moran, Kyle Eric Benson, Jeffery Craig Moree, Chandresh R. Shah, Xiaoqiang Zeng
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Publication number: 20140291708Abstract: This invention discloses an AC-type vertical light emitting element and fabrication method thereof, which achieves polarity reversal of two LEDs via regional laser stripping and die bonding. The two LEDs are placed on a conductive substrate (e.g. Si substrate); therefore, the bonding pads of the two LEDs are on the back of the conductive substrate and the light emitting surfaces of the two LEDs, thus overcoming such problems of low light emitting efficiency and high thermal resistance of the traditional lateral structure.Type: ApplicationFiled: December 21, 2012Publication date: October 2, 2014Inventors: Xiaoqiang Zeng, Shunping Chen, Shaohua Huang, Qunfeng Pan