Patents by Inventor Xiaowen Lv

Xiaowen Lv has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20190019440
    Abstract: The present invention provides a test circuit of gate driver on array (GOA) and a test method of GOA. The test circuit of GOA comprises a first wiring arranged outside the area where the plurality of display panels is located; a second wiring located between two of the adjacent regions; a switch unit arranged between the first wiring and the second wiring, wherein the area is divided into a plurality of areas where the display panel is located.
    Type: Application
    Filed: August 21, 2017
    Publication date: January 17, 2019
    Applicant: Shenzhen China Star Optoelectronics Semiconductor Display Technology Co., Ltd.
    Inventor: Xiaowen LV
  • Publication number: 20180330686
    Abstract: A gate driver on array (GOA) driver circuit and a liquid crystal display are proposed. The GOA driver circuit includes cascaded GOA units. A gate driver signal is output to an Nth-stage horizontal scan line Gn on a display zone according to an Nth-stage GOA unit output gate driver signal. The Nth-stage GOA unit includes a pull-up module, a pull-up control module, a pull-down holding module, a transferring module, and a bootstrap capacitor module.
    Type: Application
    Filed: December 20, 2016
    Publication date: November 15, 2018
    Inventors: Xiaowen LV, Shujhih Chen
  • Patent number: 10127878
    Abstract: A gate driver on array (GOA) driver circuit and a liquid crystal display are proposed. The GOA driver circuit includes cascaded GOA units. A gate driver signal is output to an Nth-stage horizontal scan line Gn on a display zone according to an Nth-stage GOA unit output gate driver signal. The Nth-stage GOA unit includes a pull-up module, a pull-up control module, a pull-down holding module, a transferring module, and a bootstrap capacitor module.
    Type: Grant
    Filed: December 20, 2016
    Date of Patent: November 13, 2018
    Assignee: SHENZHEN CHINA STAR OPTOELECTRONICS TECHNOLOGY CO., LTD.
    Inventors: Xiaowen LV, Shujhih Chen
  • Patent number: 10121441
    Abstract: A gate driver on array (GOA) driver circuit and a liquid crystal display are proposed. The GOA driver circuit includes cascaded GOA units. The Nth-stage GOA unit includes a pull-up module, a pull-up control module, a pull-down holding module, a transferring module, and a bootstrap capacitor module. The pull-up module, the pull-down holding module, and the bootstrap capacitor module are electrically connected to an Nth-stage gate signal node Qn and an Nth-stage horizontal scan line Gn, respectively. The pull-up control module and the transferring module are connected to the Nth-stage gate signal node Qn.
    Type: Grant
    Filed: December 20, 2016
    Date of Patent: November 6, 2018
    Assignee: SHENZHEN CHINA STAR OPTOELECTRONICS TECHNOLOGY CO., LTD.
    Inventors: Xiaowen Lv, Shujhih Chen
  • Patent number: 10109659
    Abstract: A includes a switch TFT and a drive TFT. The switch TFT is formed of a first source and a first drain, a first gate, and a first etching stopper layer, and a first oxide semiconductor layer and first gate isolation layer sandwiched therebetween. The drive TFT is formed of a second source and a second drain, a second gate, and a second oxide semiconductor layer, and a first etching stopper layer and a second gate isolation layer sandwiched therebetween. The electrical properties of the switch TFT and the drive TFT are different. The switch TFT has a smaller subthreshold swing to achieve fast charge and discharge, and the drive TFT has a relatively larger subthreshold swing for controlling a current and a grey scale more precisely.
    Type: Grant
    Filed: July 8, 2017
    Date of Patent: October 23, 2018
    Assignee: Shenzhen China Star Optoelectronics Technology Co., Ltd
    Inventors: Xiaowen Lv, Chihyuan Tseng, Chihyu Su, Hejing Zhang
  • Publication number: 20180293950
    Abstract: Disclosed is a GOA drive circuit, which includes multiple stages of GOA drive units. A pull-down unit of a GOA drive unit in each stage is configured to increase a time for a first voltage signal to be pulled down to a first electric potential during a process when the first voltage signal jumps from a high electric potential to a low electric potential, so as to enable the first voltage signal to have a stepwise falling edge. In the GOA drive circuit, smoothness of a voltage at a key node thereof during a voltage changing process can be ensured, whereby an output performance of the GOA drive circuit can be improved, and an overall performance thereof can be improved accordingly.
    Type: Application
    Filed: May 8, 2017
    Publication date: October 11, 2018
    Applicant: Shenzhen China Star Optoelectronics Technology Co., Ltd.
    Inventor: Xiaowen LV
  • Publication number: 20180268768
    Abstract: The present disclosure provides a gate driver on array (GOA) driving circuit and a liquid crystal display (LCD) device. The GOA driving circuit comprises a plurality of cascaded GOA units. An Nth cascaded GOA unit outputs a gate driving signal to an Nth horizontal scanning line Gn of an display area. The Nth cascaded GOA unit comprises a pull-up assembly, a pull-up control assembly, a pull-down maintaining assembly, a download assembly and a bootstrap capacitor assembly.
    Type: Application
    Filed: December 14, 2016
    Publication date: September 20, 2018
    Inventors: XIAOWEN LV, SHUJHIH CHEN
  • Patent number: 10043829
    Abstract: A method is provided for manufacturing a thin film transistor (TFT) backplate that includes a switch TFT and a drive TFT. The method is conducted such that each of the switch TFT and the drive TFT manufactured therewith includes a source electrode/a drain electrode and a gate electrode, and also includes an etching stopper layer, a semiconductor layer, and gate isolation layer that are disposed between the source electrode/the drain electrode and the gate electrode to form a TFT structure. The gate isolation layers of the switch TFT and drive TFT are formed of different materials, such as SiOx and Al2O3, or SiOx and SiNx, or Al2O3 and a mixture of SiNx and SiOx, such that electrical properties of the switch TFT and the drive TFT are made different.
    Type: Grant
    Filed: July 20, 2017
    Date of Patent: August 7, 2018
    Assignee: Shenzhen China Star Optoelectronics Technology Co., Ltd
    Inventors: Xiaowen Lv, Chihyuan Tseng, Chihyu Su, Hejing Zhang
  • Publication number: 20180212064
    Abstract: Disclosed is a liquid crystal display panel and a method for manufacturing the same. The panel includes a thin-film transistor. An active layer in communication with a source and a drain of the thin-film transistor is formed by more than two film layers. The active layer contacts with a passivation layer of the panel on a non-high-speed deposited film layer of the active layer.
    Type: Application
    Filed: January 11, 2017
    Publication date: July 26, 2018
    Applicant: Shenzhen China Star Optoelectronics Technology Co. , Ltd.
    Inventor: Xiaowen Lv
  • Publication number: 20180197960
    Abstract: The present disclosure discloses a TFT array substrate, a manufacturing method thereof and a liquid crystal display apparatus. The TFT array substrate comprising: a substrate; and a TFT disposed on the substrate; the TFT comprises a semiconductor layer and both a source electrode and a drain electrode disposed on the semiconductor layer, and wherein a contact surface between the semiconductor layer and the source electrode and/or a contact surface between the semiconductor layer and the drain electrode are uneven structure. Through above manner, the present disclosure can reduce contact resistance between the semiconductor layer and the metal layer and can improve electrical characteristic of TFT apparatus.
    Type: Application
    Filed: July 20, 2016
    Publication date: July 12, 2018
    Applicant: Shenzhen China Star Optoelectronics Technology Co., Ltd.
    Inventor: Xiaowen LV
  • Publication number: 20180182337
    Abstract: A gate driver on array (GOA) driver circuit and a liquid crystal display are proposed. The GOA driver circuit includes cascaded GOA units. The Nth-stage GOA unit includes a pull-up module, a pull-up control module, a pull-down holding module, a transferring module, and a bootstrap capacitor module. The pull-up module, the pull-down holding module, and the bootstrap capacitor module are electrically connected to an Nth-stage gate signal node Qn and an Nth-stage horizontal scan line Gn, respectively. The pull-up control module and the transferring module are connected to the Nth-stage gate signal node Qn.
    Type: Application
    Filed: December 20, 2016
    Publication date: June 28, 2018
    Inventors: Xiaowen LV, Shujhih CHEN
  • Publication number: 20180175211
    Abstract: The disclosure discloses a thin film transistor and a manufacturing method thereof, a liquid crystal display panel, a transition pattern is disposed between a doping pattern and a source electrode pattern, the transition pattern covers sidewalls of the source electrode pattern and the drain electrode pattern respectively to insulate an active pattern and the sidewalls of the source electrode pattern and the drain electrode pattern in direct contact, so as to reduce leakage current of a TFT. Moreover, two sides of the transition pattern adjacent to the active pattern are covered by the doping pattern, which can reduce contact impendence of the active pattern and the source electrode pattern as well as the drain electrode pattern, so as to prevent the problem of insufficient charge of the TFT.
    Type: Application
    Filed: July 20, 2016
    Publication date: June 21, 2018
    Applicant: Shenzhen China Star Optoelectronics Technology Co., Ltd.
    Inventor: Xiaowen LV
  • Patent number: 9960195
    Abstract: The present invention provides method for manufacturing a TFT backplane and a structure of a TFT backplane.
    Type: Grant
    Filed: August 15, 2014
    Date of Patent: May 1, 2018
    Assignee: Shenzhen China Star Optoelectronics Technology Co., Ltd.
    Inventors: Wenhui Li, Yifan Wang, Chihyu Su, Xiaowen Lv
  • Patent number: 9947699
    Abstract: A method for manufacturing a dual gate oxide semiconductor TFT substrate utilizes a halftone mask to implement a photo process, which not only accomplishes patterning to an oxide semiconductor layer but also obtains an oxide conductor layer with ion doping. The method implements patterning to a bottom gate isolation layer and a top gate isolation layer at the same time with one photolithographic process. The method implements patterning to second and third metal layers at the same time to obtain a first source, a first drain, a second source, a second drain, a first top gate and a second top gate with one photolithographic process. The method implements patterning to a second flat layer, a passivation layer and a top gate isolation layer at the same time with one photolithographic process. The number of photolithographic processes involved is reduced to nine so as to simplify the manufacturing process.
    Type: Grant
    Filed: July 16, 2017
    Date of Patent: April 17, 2018
    Assignee: SHENZHEN CHINA STAR OPTOELECTRONICS TECHNOLOGY CO., LTD.
    Inventors: Shimin Ge, Hejing Zhang, Chihyuan Tseng, Chihyu Su, Wenhui Li, Longqiang Shi, Xiaowen Lv
  • Publication number: 20180097020
    Abstract: A thin-film transistor (TFT) array substrate includes a TFT arrangement and a storage capacitor. A gate insulation layer has a portion interposed between two electrode plates of the storage capacitor and thinner than a remaining portion of the gate insulation layer and thus, the thickness of insulation between the electrode plates of the storage capacitor is reduced so that the area of the opposite surfaces of the capacitor can be made smaller and an increased aperture ratio can be achieved.
    Type: Application
    Filed: December 7, 2017
    Publication date: April 5, 2018
    Inventors: Xiaowen Lv, Chihyu Su
  • Patent number: 9935160
    Abstract: The present invention provides an OLED display device, which includes: a substrate (1), a plurality of pixel zones arranged in an array on the substrate (1), each of the pixel zones comprising a pixel electrode (2), an organic light-emitting layer (3), and a common electrode (4) that are sequentially stacked on the substrate (1), and a pixel separation layer (5) including a plurality of openings, the openings being each delimited and circumferentially surrounded by a pixel separation layer sidewall (51), each of the openings corresponding to one of the pixel zones. The pixel separation layer (5) is formed of an inorganic material.
    Type: Grant
    Filed: May 25, 2015
    Date of Patent: April 3, 2018
    Assignee: SHENZHEN CHINA STAR OPTOELECTRONICS TECHNOLOGY CO., LTD.
    Inventors: Xiaowen Lv, Hejing Zhang
  • Publication number: 20180090703
    Abstract: A thin-film transistor array panel and a manufacturing method thereof are disclosed. The thin-film transistor array panel has a polysilicon layer including a first region, a second region and a third region. The second region includes a fourth region, a fifth region and a sixth region. The third region includes a seventh region, an eighth region and ninth region. The sixth, the fourth, the ninth and the seventh regions are doped with first, second, third and fourth ions, respectively. In a thin-film transistor of the thin-film transistor array panel, a gate electrode, a source electrode and a drain electrode thereof correspond to the first, the sixth and the ninth regions, respectively. The device is able to reduce leakage current in the thin-film transistor.
    Type: Application
    Filed: April 1, 2016
    Publication date: March 29, 2018
    Inventor: Xiaowen LV
  • Patent number: 9922995
    Abstract: The present invention provides a manufacture method of an oxide semiconductor TFT substrate and a structure thereof. The manufacture method of the dual gate oxide semiconductor TFT substrate utilizes the halftone mask to implement one photo process, which cannot only accomplish the patterning to the oxide semiconductor layer but also obtain the oxide conductor layer (52?) with ion doping process, and the oxide conductor layer (52?) is employed as being the pixel electrode of the LCD to replace the ITO pixel electrode in prior art; the method manufactures the source (81), the drain (82) and the top gate (71) at the same time with one photo process; the method implements patterning process to the passivation layer (8) and the top gate isolation layer (32) together with one photo process, to reduce the number of the photo processes to nine for shortening the manufacture procedure, raising the production efficiency and lowering the production cost.
    Type: Grant
    Filed: December 27, 2016
    Date of Patent: March 20, 2018
    Assignee: SHENZHEN CHINA STAR OPTOELECTRONICS TECHNOLOGY CO., LTD.
    Inventors: Shimin Ge, Hejing Zhang, Chihyuan Tseng, Chihyu Su, Wenhui Li, Longqiang Shi, Xiaowen Lv
  • Publication number: 20180031930
    Abstract: The present disclosure discloses a pixel unit and an array substrate, the pixel unit includes: a thin film transistor, and a storage capacitor electrically connected to the thin film transistor, the storage capacitor includes a first metal layer and a second metal layer disposed opposite to the first metal layer, a concave-convex pattern is provided on a surface of the first metal layer facing to the second metal layer. It is capable of effectively improving the aperture ratio of the liquid crystal display device, under the premise that the resolution of which is guaranteed.
    Type: Application
    Filed: December 30, 2015
    Publication date: February 1, 2018
    Applicant: Shenzhen China Star Optoelectronics Technology Co., Ltd.
    Inventor: Xiaowen LV
  • Patent number: 9876037
    Abstract: The present invention provides a thin-film transistor array substrate and a manufacturing method thereof. In the thin-film transistor array substrate of the present invention, the portion of the gate insulation layer interposed between two electrode plates of the storage capacitor is smaller than that of the remaining portion of the gate insulation layer so that the thickness of the insulation layer of the storage capacitor is reduced and the area of the opposite surfaces of the capacitor can be made smaller and an increased aperture ratio can be achieved.
    Type: Grant
    Filed: May 25, 2015
    Date of Patent: January 23, 2018
    Assignee: SHENZHEN CHINA STAR OPTOELECTRONICS TECHNOLOGY CO., LTD.
    Inventors: Xiaowen Lv, Chihyu Su