Abstract: A device comprises a substrate comprising a plurality of build-up layers and a cavity. A bridge die is located within the cavity and a plurality of cavity side bumps are on one side of the bridge die. A plurality of interconnect pads with variable heights are on one of the build-up layers of the substrate coupled to the plurality of the cavity side bumps to bond the bridge die to the substrate.

Abstract: An apparatus is provided which comprises: a plurality of interconnect layers within a substrate, organic dielectric material over the plurality of interconnect layers, copper pads on a surface of a cavity within the organic dielectric material, an integrated circuit bridge device coupled with the copper pads, wherein a surface of the integrated circuit bridge device is elevated above an opening of the cavity, underfill material between the integrated circuit bridge device and the surface of the cavity, and build-up layers formed over the organic dielectric material around the integrated circuit bridge device. Other embodiments are also disclosed and claimed.

Abstract: Embodiments disclosed herein include apparatuses with glass core package substrates. In an embodiment, an apparatus comprises a substrate with a first surface and a second surface opposite from the first surface. A sidewall is between the first surface and the second surface, and the substrate comprises a glass layer. In an embodiment, a via is provided through the substrate between the first surface and the second surface, and the via is electrically conductive. In an embodiment, a layer in contact with the sidewall of the substrate surrounds a perimeter of the substrate.

Abstract: Embodiments disclosed herein include glass core package substrates with a stiffener. In an embodiment, an apparatus comprises a substrate with a first layer with a first width, where the first layer is a glass layer, a second layer under the first layer, where the second layer has a second width that is smaller than the first width, and a third layer over the first layer, where the third layer has a third width that is smaller than the first width. In an embodiment, the apparatus further comprises a metallic structure with a first portion and a second portion, where the first portion is over a top surface of the substrate and the second portion extends away from the first portion and covers at least a sidewall of the first layer.

Abstract: Processes and structures resulting therefrom for the improvement of high speed signaling integrity in electronic substrates of integrated circuit packages, which is achieved with the formation of airgap structures within dielectric material(s) between adjacent conductive routes that transmit/receive electrical signals, wherein the airgap structures decrease the capacitance and/or decrease the insertion losses in the dielectric material used to form the electronic substrates.

Abstract: The present disclosure discloses a flammable and explosive liquid transportation system and a method and an application thereof. The system includes a gas inlet pipe and a liquid transportation pipeline; a first valve and a second valve are sequentially disposed on the gas inlet pipe; two ends of the liquid transportation pipeline respectively communicate with the raw material barrel and a reaction vessel, a third valve, a fifth valve, and a seventh valve are sequentially disposed on the liquid transportation pipeline; the gas inlet pipe and the liquid transportation pipeline communicate with each other, and a fourth valve is disposed on the connecting pipe; a bypass pipe is disposed on the liquid transportation pipeline, and a sixth valve is disposed on the bypass pipe. The present disclosure resolves problems of a high risk and poor environmental protection caused by an existing flammable and explosive liquid transfer manner.

Abstract: Microelectronic assemblies, related devices and methods, are disclosed herein. In some embodiments, a microelectronic assembly may include a first layer of a substrate including a first material having a cavity and a conductive pad at a bottom of the cavity; a first microelectronic component having a first surface and an opposing second surface, the first microelectronic component in the cavity and electrically coupled to the conductive pad at the bottom of the cavity; a second layer of the substrate on the first layer of the substrate, the second layer including a second material that extends into the cavity and on and around the first microelectronic component, wherein the second material includes an organic photoimageable dielectric (PID) or an organic non-photoimageable dielectric (non-PID); and a second microelectronic component electrically coupled to the second surface of the first microelectronic component by conductive pathways through the second layer of the substrate.

Abstract: The present disclosure provides a retrieval and push method based on a fine art image tag, including the following steps: establishing a tag model database: training different tag contents with training samples of different subjects and different categories, and categorizing the training samples in the database according to knowledge point tags to obtain the tag model database; retrieval and push: uploading fine art work image samples to the trained tag model database, then extracting knowledge point tags of the fine art work image samples, retrieving associated fine art works, and then pushing the associated fine art works; real-time updating: recording knowledge point tags of input fine art work image samples by the tag model database in real time, and establishing a common tag and a model, and subsequently increasingly pushing contents relevant to the common tag; and generating a user portrait.

Abstract: Embodiments include semiconductor packages and method of forming the semiconductor packages. A semiconductor package includes a plurality of conductive layers over a package substrate. The conductive layers include a first conductive layer and first-level interconnects (FLIs) in the package substrate. The semiconductor package also includes a solder resist that surrounds the FLIs, where the solder resist has a top surface that is substantially coplanar to top surfaces of the FLIs, a bridge coupled directly to the first conductive layer with solder balls, where the first conductive layer is coupled to the FLIs, and a dielectric over the conductive layers, the bridge, and the solder resist of the package substrate. The bridge may be an embedded multi-die interconnect bridge (EMIB). The first conductive layer may include first conductive pads and second conductive pads. The FLIs may include first conductive vias, second conductive vias, diffusion layers, and third conductive pads.

Abstract: Embodiments disclosed herein include a package substrate. In an embodiment, the package substrate comprises a first layer and a second layer over the first layer. In an embodiment, the second layer comprises a dielectric material including sulfur. In an embodiment, fillers are within the second layer. In an embodiment, the fillers have a volume fraction that is less than approximately 0.2.

Abstract: Methods, systems, apparatus, and articles of manufacture to improve reliability of vias in a glass substrate of an integrated circuit package are disclosed. An example integrated circuit (IC) package substrate includes a glass substrate, a via extending between first and second surfaces of the glass substrate, and a conductive material provided in the via, the conductive material including gallium and silver.

Abstract: Embodiments disclosed herein include electronic packages and methods of forming such electronic packages. In an embodiment, the electronic package comprises a mold layer having a first surface and a second surface opposite the first surface, and a plurality of first dies embedded in the mold layer. In an embodiment, each of the plurality of first dies has a surface that is substantially coplanar with the first surface of the mold layer. In an embodiment, the electronic package further comprises a second die embedded in the mold layer. In an embodiment, the second die is positioned between the plurality of first dies and the second surface of the mold layer.

Abstract: Methods and apparatus for optical thermal treatment in semiconductor packages are disclosed. A disclosed example integrated circuit (IC) package includes a dielectric substrate, an interconnect associated with the dielectric substrate, and light absorption material proximate or surrounding the interconnect, the light absorption material to increase in temperature in response to being exposed to a pulsed light for thermal treatment corresponding to the IC package.

Abstract: An integrated circuit device substrate includes a first glass layer with a redistribution layer mounting region and an integrated circuit device mounting region, wherein a first major surface of the first glass layer is overlain by a first dielectric layer, and wherein the first glass layer includes a first plurality of conductive pillars. A second glass layer is on the redistribution layer mounting region on the first glass layer, wherein the second glass layer includes a second dielectric layer on a second major surface thereof, and wherein the second dielectric layer is bonded to the first dielectric layer on the first major surface of the first glass layer, the second glass layer including a second plurality of conductive pillars electrically interconnected with the first plurality of conductive pillars in the first glass layer.

Abstract: Mechanical or chemical processes can form roughened surfaces which can be used for coupling layers of electrical systems such as when forming dies, substrates, computer chips or the like that, when subjected to high stress, are robust enough to remain coupled together.

Abstract: A semiconductor device and associated methods are disclosed. In one example, the electronic device includes a photonic die and a glass substrate. In selected examples, the semiconductor device includes one or more turning mirrors to direct an optical signal between the photonic die and the glass substrate. Configurations of turning mirrors are provided to improve signal integrity and manufacturability.

Abstract: Methods, systems, apparatus, and articles of manufacture to produce integrated circuit (IC) packages having silicon nitride adhesion promoters are disclosed. An example IC package disclosed herein includes a metal layer on a substrate, a layer on the metal layer, the layer including silicon and nitrogen, and solder resist on the layer.

Abstract: An apparatus is provided which comprises: a plurality of interconnect layers within a substrate, a layer of organic dielectric material over the plurality of interconnect layers, copper pads within the layer of organic dielectric material, a first integrated circuit device copper-to-copper bonded with the copper pads, inorganic dielectric material over the layer of organic dielectric material, the inorganic dielectric material embedding the first integrated circuit device, and the inorganic dielectric material extending across a width of the substrate, and a second integrated circuit device coupled with a substrate surface above the inorganic dielectric material. Other embodiments are also disclosed and claimed.

Abstract: A substrate for an electronic system includes a glass core layer. The glass core layer includes a first surface and a second surface opposite the first surface; and at least one through-glass via (TGV) extending through the glass core layer from the first surface to the second surface. The TGV includes an opening filled with an electrically conductive material; and a via liner including a sidewall material disposed on a sidewall of the opening between the glass of the glass core layer and the electrically conductive material, wherein the sidewall material includes carbon.

Abstract: Methods and apparatus to prevent over-etch in semiconductor packages are disclosed. A disclosed example semiconductor package includes at least one dielectric layer, an interconnect extending at least partially through or from the at least one dielectric layer, and a material on at least a portion of the interconnect, wherein the material comprises at least one of silicon or titanium.