Abstract: Apparatus associated with improved magnetic resonance imaging (MRI) guided needle biopsy procedures (e.g., breast needle biopsy) are described. One example apparatus includes a support structure configured to support a patient in a face-down prone position where a breast of the patient is positioned in a first free hanging pre-imaging position. The example apparatus includes an immobilization structure configured to reposition the breast into an immobilized position suitable for MRI and for medical instrument access. The immobilization structure may include a biopsy plate, a pressure plate, and MRI coils. The MRI coils are configured to be repositioned from a first position associated with the free hanging pre-imaging position to a second position associated with the immobilized position to facilitate improving the signal to noise ratio associated with signal received from the breast through the MRI coils. The biopsy plate is removable without removing either of the MRI coils.

Abstract: A memory cell is provided that includes a diode and a resistance-switching material layer coupled in series with the diode. The resistance-switching material layer has a thickness between 20 and 65 angstroms. Other aspects are also provided.

Abstract: A method and system provide a magnetic transducer having an air-bearing surface (ABS) location. An intermediate is provided. The intermediate layer includes a first sublayer and a second sublayer in at least a side shield region. The first sublayer has a first sublayer top. The second sublayer is on the first sublayer top in the shield region. A trench is formed in the intermediate layer using at least one etch. A main pole is provided in the trench. The main pole has a bottom and a top wider than the bottom. The first sublayer top is between the top and the bottom of the main pole. At least a portion of the second sublayer is removed in the shield region. At least one half side shield is provided. A bottom of the at least one half side shield being between the top and the bottom of the main pole.

Abstract: The present invention relates to the field of chemical synthesis, and in particular to a method for synthesizing 1-(2-fluorobenzyl)-1H-pyrazolo[3,4-b]pyridin-3-formamidine hydrochloride, which is an important intermediate of Riociguat that is an anti-thromboembolic-disease medicine. The method is characterized in that: 3-iodo-1H-pyrazolo[3,4-b]pyridine is used as a raw material; the raw material is reacted with fluorobenzyl bromide to form a compound (10); the compound (10) is reacted with zinc cyanide to form a compound (6); the compound (6) is reacted with sodium methoxide, ammonium chloride, acetic acid and methanol to form a compound (8); and the compound (8) is reacted with chlorine hydride gas to form 1-(2-fluorobenzyl)-1H-pyrazolo[3,4-b]pyridin-3-formamidine hydrochloride. The method has the characteristics of cheap and readily available raw materials, high yield, mild reaction conditions and the like, and is a synthesis method having a large-scale preparation value.

Abstract: The present invention relates to the field of chemical synthesis, and in particular to a method for synthesizing 1-(2-fluorobenzyl)-1H-pyrazolo[3,4-b]pyridin-3-formamidine hydrochloride, which is an important intermediate of Riociguat that is an anti-thromboembolic-disease medicine. The method is characterized in that: 3-iodo-1H-pyrazolo[3,4-b]pyridine is used as a raw material; the raw material is reacted with fluorobenzyl bromide to form a compound (10); the compound (10) is reacted with zinc cyanide to form a compound (6); the compound (6) is reacted with sodium methoxide, ammonium chloride, acetic acid and methanol to form a compound (8); and the compound (8) is reacted with chlorine hydride gas to form 1-(2-fluorobenzyl)-1H-pyrazolo[3,4-b]pyridin-3-formamidine hydrochloride. The method has the characteristics of cheap and readily available raw materials, high yield, mild reaction conditions and the like, and is a synthesis method having a large-scale preparation value.

Abstract: A method includes determining a read threshold voltage corresponding to a group of storage elements in a non-volatile memory that includes a three-dimensional (3D) memory of a data storage device. The method also includes determining an error metric corresponding to data read from the group of storage elements using the read threshold voltage. The method includes comparing the read threshold voltage and the error metric to one or more criteria corresponding to a corrupting event.

Abstract: A method includes determining a read threshold voltage corresponding to a group of storage elements in a non-volatile memory of a data storage device. The method also includes determining an error metric corresponding to data read from the group of storage elements using the read threshold voltage. The method includes comparing the read threshold voltage and the error metric to one or more criteria corresponding to a corrupting event.

Abstract: A method fabricates a magnetic transducer having an ABS location. Etch stop and nonmagnetic etchable layers are provided. A side shield layer is provided between the ABS location and the etch stop and etchable layers. Part of the side shield and etchable layers are removed using a first removal process. This portion of the pole trench formed has a top wider than the bottom in the side shield layer. Part of the etchable layer is removed using a second removal process, thereby forming the pole trench. The pole trench has a bottom and a top wider than the bottom in the side shield layer and substantially perpendicular sidewalls in the etchable layer. A nonmagnetic side gap layer is provided. A remaining portion of the pole trench has a location and profile for a pole. At least part of the pole is in the pole trench.

Abstract: A memory cell is provided that includes a diode and a resistance-switching material layer coupled in series with the diode. The resistance-switching material layer has a thickness between 20 and 65 angstroms. Other aspects are also provided.

Abstract: Apparatus associated with improved magnetic resonance imaging (MRI) guided needle biopsy procedures (e.g., breast needle biopsy) are described. One example apparatus includes a support structure configured to support a patient in a face-down prone position where a breast of the patient is positioned in a first free hanging pre-imaging position. The example apparatus includes an immobilization structure configured to reposition the breast into an immobilized position suitable for MRI and for medical instrument access. The immobilization structure may include a biopsy plate, a pressure plate, and MRI coils. The MRI coils are configured to be repositioned from a first position associated with the free hanging pre-imaging position to a second position associated with the immobilized position to facilitate improving the signal to noise ratio associated with signal received from the breast through the MRI coils. The biopsy plate is removable without removing either of the MRI coils.

Abstract: A memory cell is provided that includes a diode and a resistance-switching material layer coupled in series with the diode. The resistance-switching material layer: (a) includes a material from the family consisting of XvOw, wherein X represents an element from the family consisting of Hf and Zr, and wherein the subscripts v and w have non-zero values that form a stable compound, and (b) has a thickness between 20 and 65 angstroms. Other aspects are also provided.

Abstract: An authorization method for a smart TV is provided. When an application is to be activated, it is determined whether machine authorization information is stored. When the machine authorization information is stored, a client certificate corresponding to the application is searched for. When the client certificate is found, it means the application is authorized. The application authorized by a server can then be activated.

Abstract: A method for fabricating a magnetic recording transducer having a magnetic writer pole with a short effective throat height is provided. In an embodiment, a writer structure comprising a magnetic writer pole having a trailing bevel and a nonmagnetic stack on the top surface of the writer pole is provided. A dielectric write gap layer comprising alumina is deposited over the trailing bevel section and the nonmagnetic stack; and at least one etch stop layer is deposited over the dielectric write gap layer. A layer of nonmagnetic fill material is deposited over the etch stop layer and to form a nonmagnetic bevel by performing a dry etch process. The etch stop layer(s) are removed from the short throat section; and a trailing shield is deposited over the short throat section, nonmagnetic bevel, and nonmagnetic stack top surface.

Abstract: A method for fabricating a magnetic transducer having an air-bearing surface (ABS). An underlayer having a first and second regions and a bevel connecting these regions is provided. The first region is thicker and closer to the ABS than the second region. An intermediate layer conformal with the underlayer is provided. A hard mask layer having a top surface perpendicular to the ABS is formed on the intermediate layer. Part of the hard mask and intermediate layers are removed to provide a trench. The trench has a bottom surface and sidewalls having a first angle between the bottom surface and the intermediate layer and a second angle corresponding to the hard mask layer. A pole is provided in the trench. The pole has a pole tip, a yoke distal, and a bottom bevel. At least the yoke includes sidewalls having sidewall angles corresponding to the first and second angles.

Abstract: A process is provided for etching a mask layer and removal of residue from a structure having an area sheltered from directional etching. The structure has a shape that forms a silhouette area obstructed from being etched by anisotropic bombardment originating from a first direction, and a mask formed over the mask layer over the structure; A first etch process removes at least a part of the mask layer and retains at least a part of mask layer in the sheltered area. A second etch process removes at least a part of the mask layer in the sheltered area by hydrogen based microwave plasma etching.

Abstract: A memory cell is provided that includes a diode and a resistance-switching material layer coupled in series with the diode. The resistance-switching material layer: (a) has a dielectric constant in the range of about 5 to about 27, and (b) includes a material from the family consisting of XvOw, wherein X represents an element from the family consisting of Hf and Zr, and wherein the subscripts v and w have non-zero values that form a stable compound. Other aspects are also provided.

Abstract: An electrically-controlled failsafe switch is included in an MRI transmit-and-receive RF coil assembly so as to protect it from induced RF currents in the event it is disconnected from an MRI system, but inadvertently left linked to strong MRI RF fields during imaging procedures using other RF coils.

Abstract: Methods involve using a memory array having memory cells comprising a diode and an antifuse, in which the antifuse is made smaller and programmed at lower voltage by using an antifuse material having a higher dielectric constant and a higher acceleration factor than those of silicon dioxide, and in which the diode is made of a material having a lower band gap than that of silicon. Such memory arrays can be made to have long operating lifetimes by using the high acceleration factor and lower band gap materials. Antifuse materials having dielectric constants between 5 and 27, for example, hafnium silicon oxynitride or hafnium silicon oxide, are particularly effective. Diode materials with band gaps lower than that of silicon, such as germanium or a silicon-germanium alloy, are particularly effective.

Abstract: An electrically-controlled failsafe switch is included in an MRI transmit-and-receive RF coil assembly so as to protect it from induced RF currents in the event it is disconnected from an MRI system, but inadvertently left linked to strong MRI RF fields during imaging procedures using other RF coils.

Abstract: A non-volatile memory chip package is prepared for surface mounting to a substrate in a solder reflow process by programming erased blocks to higher threshold voltage levels, to improve data retention for blocks which are preloaded with content, such as by an electronic device manufacturer. Following the surface mounting, the previously-erased blocks are returned to the erased state. The threshold voltage of storage elements of the preloaded blocks can change during the surface mounting process due to a global charge effect phenomenon. The effect is most prominent for higher state storage elements which are surrounded by erased blocks, in a chip for which the wafer backside was thinned and polished. The erased blocks can be programmed using a single program pulse without performing a verify operation, as a wide threshold voltage distribution is acceptable.