Patents by Inventor Xikun Wang
Xikun Wang has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 10233547Abstract: Provided are methods for etching films comprising transition metals which help to minimize higher etch rates at the grain boundaries of polycrystalline materials. Certain methods pertain to amorphization of the polycrystalline material, other pertain to plasma treatments, and yet other pertain to the use of small doses of halide transfer agents in the etch process.Type: GrantFiled: February 19, 2018Date of Patent: March 19, 2019Assignee: Applied Materials, Inc.Inventors: Benjamin Schmiege, Nitin K. Ingle, Srinivas D. Nemani, Jeffrey W. Anthis, Xikun Wang, Jie Liu, David Benjaminson
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Publication number: 20190013211Abstract: Methods are described herein for etching tantalum-containing films with various potential additives while still retaining other desirable patterned substrate portions. The methods include exposing a tantalum-containing film to a chlorine-containing precursor (e.g. Cl2) with a concurrent plasma. The plasma-excited chlorine-containing precursor selectively etches the tantalum-containing film and other industrially-desirable additives. Chlorine is then removed from the substrate processing region. A hydrogen-containing precursor (e.g. H2) is delivered to the substrate processing region (also with plasma excitation) to produce a relatively even and residue-free tantalum-containing surface. The methods presented remove tantalum while retaining materials elsewhere on the patterned substrate.Type: ApplicationFiled: May 7, 2018Publication date: January 10, 2019Applicant: Applied Materials, Inc.Inventors: Xikun Wang, Naomi Yoshida, Soumendra N. Barman, Nitin K. Ingle
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Patent number: 10163696Abstract: Exemplary methods for removing cobalt material may include flowing a chlorine-containing precursor into a processing region of a semiconductor processing chamber. The methods may include forming a plasma of the chlorine-containing precursor to produce plasma effluents. The methods may also include contacting an exposed region of cobalt with the plasma effluents. The exposed region of cobalt may include an overhang of cobalt on a trench defined on a substrate. The plasma effluents may produce cobalt chloride at the overhang of cobalt. The methods may include flowing a nitrogen-containing precursor into the processing region of the semiconductor processing chamber. The methods may further include contacting the cobalt chloride with the nitrogen-containing precursor. The methods may also include recessing the overhang of cobalt.Type: GrantFiled: November 11, 2016Date of Patent: December 25, 2018Assignee: Applied Materials, Inc.Inventors: Xikun Wang, Jianxin Lei, Nitin Ingle, Roey Shaviv
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Publication number: 20180323103Abstract: Embodiments of methods and apparatus for filling a feature disposed in a substrate are disclosed herein. In some embodiments, a method for filling a feature disposed in a substrate includes (a) depositing a metal within the feature to a first predetermined thickness in a first process chamber; (b) depositing the metal within the feature to a second predetermined thickness in a second process chamber; (c) etching the metal deposited in (b) to remove an overhang of the metal at a top of the feature in a third process chamber different than the first and second process chambers; and (d) subsequent to (c), filling the feature with the metal in a fourth process chamber different than the first and third process chambers.Type: ApplicationFiled: May 4, 2018Publication date: November 8, 2018Inventors: Roey Shaviv, Xikun Wang, Ismail Emesh, Jianxin Lei, Wenting Hou
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Patent number: 10049891Abstract: Exemplary methods for removing cobalt material may include flowing a chlorine-containing precursor into a processing region of a semiconductor processing chamber. The methods may include forming a plasma of the chlorine-containing precursor to produce plasma effluents. The methods may also include contacting an exposed region of cobalt with the plasma effluents. The methods may include flowing a nitrogen-containing precursor into the processing region of the semiconductor processing chamber. The methods may further include contacting the cobalt chloride with the nitrogen-containing precursor. The methods may also include recessing the cobalt, which leaves a residue behind. The methods may include forming a remote plasma of a hydrogen-containing precursor. The methods may also include removing the cobalt residue using plasma effluents of the hydrogen-containing precursor.Type: GrantFiled: May 31, 2017Date of Patent: August 14, 2018Assignee: Applied Materials, Inc.Inventors: Xikun Wang, Nitin Ingle
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Publication number: 20180195179Abstract: Provided are methods for etching films comprising transition metals which help to minimize higher etch rates at the grain boundaries of polycrystalline materials. Certain methods pertain to amorphization of the polycrystalline material, other pertain to plasma treatments, and yet other pertain to the use of small doses of halide transfer agents in the etch process.Type: ApplicationFiled: February 19, 2018Publication date: July 12, 2018Inventors: Benjamin Schmiege, Nitin K. Ingle, Srinivas D. Nemani, Jeffrey W. Anthis, Xikun Wang, Jie Liu, David Benjaminson
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Publication number: 20180138085Abstract: Exemplary methods for removing cobalt material may include flowing a chlorine-containing precursor into a processing region of a semiconductor processing chamber. The methods may include forming a plasma of the chlorine-containing precursor to produce plasma effluents. The methods may also include contacting an exposed region of cobalt with the plasma effluents. The exposed region of cobalt may include an overhang of cobalt on a trench defined on a substrate. The plasma effluents may produce cobalt chloride at the overhang of cobalt. The methods may include flowing a nitrogen-containing precursor into the processing region of the semiconductor processing chamber. The methods may further include contacting the cobalt chloride with the nitrogen-containing precursor. The methods may also include recessing the overhang of cobalt.Type: ApplicationFiled: November 11, 2016Publication date: May 17, 2018Applicant: Applied Materials, Inc.Inventors: Xikun Wang, Jianxin Lei, Nitin Ingle, Roey Shaviv
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Patent number: 9947549Abstract: Methods are described herein for etching cobalt films which are difficult to volatize. The methods include exposing a cobalt film to a bromine or chlorine-containing precursor with a concurrent local plasma which applies a bias to the impinging etchants. Cobalt halide is formed on the surface at the same time an amorphized cobalt layer is formed near the surface. A carbon-and-nitrogen-containing precursor is later delivered to the substrate processing region to form volatile cobalt complexes which desorb from the surface of the cobalt film. Cobalt may be selectively removed. The concurrent production of cobalt halide and amorphized regions was found to markedly increase the overall etch rate and markedly improve surface smoothness upon exposure to the carbon-and-nitrogen-containing precursor. All the recited steps may now be performed in the same substrate processing chamber.Type: GrantFiled: October 24, 2016Date of Patent: April 17, 2018Assignee: Applied Materials, Inc.Inventors: Xikun Wang, Zhenjiang Cui, Soonam Park, Nitin K. Ingle
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Publication number: 20180102259Abstract: Methods are described herein for etching cobalt films which are difficult to volatize. The methods include exposing a cobalt film to a bromine or chlorine-containing precursor with a concurrent local plasma which applies a bias to the impinging etchants. Cobalt halide is formed on the surface at the same time an amorphized cobalt layer is formed near the surface. A carbon-and-nitrogen-containing precursor is later delivered to the substrate processing region to form volatile cobalt complexes which desorb from the surface of the cobalt film. Cobalt may be selectively removed. The concurrent production of cobalt halide and amorphized regions was found to markedly increase the overall etch rate and markedly improve surface smoothness upon exposure to the carbon-and-nitrogen-containing precursor. All the recited steps may now be performed in the same substrate processing chamber.Type: ApplicationFiled: October 24, 2016Publication date: April 12, 2018Applicant: Applied Materials, Inc.Inventors: Xikun Wang, Zhenjiang Cui, Soonam Park, Nitin K. Ingle
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Patent number: 9896770Abstract: Provided are methods for etching films comprising transition metals which help to minimize higher etch rates at the grain boundaries of polycrystalline materials. Certain methods pertain to amorphization of the polycrystalline material, other pertain to plasma treatments, and yet other pertain to the use of small doses of halide transfer agents in the etch process.Type: GrantFiled: December 19, 2016Date of Patent: February 20, 2018Assignee: Applied Materials, Inc.Inventors: Benjamin Schmiege, Nitin K. Ingle, Srinivas D. Nemani, Jeffrey W. Anthis, Xikun Wang, Jie Liu, David Benjaminson
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Patent number: 9711366Abstract: Methods of selectively etching metal-containing materials from the surface of a substrate are described. The etch selectively removes metal-containing materials relative to silicon-containing films such as silicon, polysilicon, silicon oxide, silicon germanium and/or silicon nitride. The methods include exposing metal-containing materials to halogen containing species in a substrate processing region. A remote plasma is used to excite the halogen-containing precursor and a local plasma may be used in embodiments. Metal-containing materials on the substrate may be pretreated using moisture or another OH-containing precursor before exposing the resulting surface to remote plasma excited halogen effluents in embodiments.Type: GrantFiled: January 6, 2016Date of Patent: July 18, 2017Assignee: Applied Materials, Inc.Inventors: Nitin K. Ingle, Jessica Sevanne Kachian, Lin Xu, Soonam Park, Xikun Wang, Jeffrey W. Anthis
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Patent number: 9659791Abstract: Methods are described for etching metal layers that are difficult to volatize, such as cobalt, nickel, and platinum to form an etched metal layer with reduced surface roughness. The methods include pretreating the metal layer with a local plasma formed from a hydrogen-containing precursor. The pretreated metal layer is then reacted with a halogen-containing precursor to form a halogenated metal layer having a halogenated etch product. A carbon-and-nitrogen-containing precursor reacts with the halogenated etch product to form a volatile etch product that can be removed in the gas phase from the etched surface of the metal layer. The surface roughness may be reduced by performing one or more plasma treatments on the etching metal layer after a plurality of etching sequences. Surface roughness is also reduced by controlling the temperature and length of time the metal layer is reacting with the etchant precursors.Type: GrantFiled: July 16, 2015Date of Patent: May 23, 2017Assignee: Applied Materials, Inc.Inventors: Xikun Wang, David Cui, Anchuan Wang, Nitin K. Ingle
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Publication number: 20170110475Abstract: Methods of selectively etching tungsten from the surface of a patterned substrate are described. The etch electrically separates vertically arranged tungsten slabs from one another as needed, for example, in the manufacture of vertical flash memory devices. The tungsten etch may selectively remove tungsten relative to films such as silicon, polysilicon, silicon oxide, aluminum oxide, titanium nitride and silicon nitride. The methods include exposing electrically-shorted tungsten slabs to remotely-excited fluorine formed in a capacitively-excited chamber plasma region. The methods then include exposing the tungsten slabs to remotely-excited fluorine formed in an inductively-excited remote plasma system. A low electron temperature is maintained in the substrate processing region during each operation to achieve high etch selectivity.Type: ApplicationFiled: December 28, 2016Publication date: April 20, 2017Applicant: Applied Materials, Inc.Inventors: Jie Liu, Xikun Wang, Anchuan Wang, Nitin K. Ingle
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Publication number: 20170096740Abstract: Provided are methods for etching films comprising transition metals which help to minimize higher etch rates at the grain boundaries of polycrystalline materials. Certain methods pertain to amorphization of the polycrystalline material, other pertain to plasma treatments, and yet other pertain to the use of small doses of halide transfer agents in the etch process.Type: ApplicationFiled: December 19, 2016Publication date: April 6, 2017Inventors: Benjamin Schmiege, Nitin K. Ingle, Srinivas D. Nemani, Jeffrey W. Anthis, Xikun Wang, Jie Liu, David Benjaminson
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Patent number: 9607856Abstract: Methods are described herein for selectively etching titanium nitride relative to dielectric films, which may include, for example, alternative metals and metal oxides lacking in titanium and/or silicon-containing films (e.g. silicon oxide, silicon carbon nitride and low-K dielectric films). The methods include a remote plasma etch formed from a chlorine-containing precursor. Plasma effluents from the remote plasma are flowed into a substrate processing region where the plasma effluents react with the titanium nitride. The plasma effluents react with exposed surfaces and selectively remove titanium nitride while very slowly removing the other exposed materials. The substrate processing region may also contain a plasma to facilitate breaking through any titanium oxide layer present on the titanium nitride. The plasma in the substrate processing region may be gently biased relative to the substrate to enhance removal rate of the titanium oxide layer.Type: GrantFiled: May 22, 2015Date of Patent: March 28, 2017Assignee: Applied Materials, Inc.Inventors: Xikun Wang, Anchuan Wang, Nitin K. Ingle, Dmitry Lubomirsky
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Patent number: 9553102Abstract: Methods of selectively etching tungsten from the surface of a patterned substrate are described. The etch electrically separates vertically arranged tungsten slabs from one another as needed, for example, in the manufacture of vertical flash memory devices. The tungsten etch may selectively remove tungsten relative to films such as silicon, polysilicon, silicon oxide, aluminum oxide, titanium nitride and silicon nitride. The methods include exposing electrically-shorted tungsten slabs to remotely-excited fluorine formed in a capacitively-excited chamber plasma region. The methods then include exposing the tungsten slabs to remotely-excited fluorine formed in an inductively-excited remote plasma system. A low electron temperature is maintained in the substrate processing region during each operation to achieve high etch selectivity.Type: GrantFiled: August 19, 2014Date of Patent: January 24, 2017Assignee: Applied Materials, Inc.Inventors: Xikun Wang, Jie Liu, Anchuan Wang, Nitin K. Ingle
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Publication number: 20170018439Abstract: Methods are described for etching metal layers that are difficult to volatize, such as cobalt, nickel, and platinum to form an etched metal layer with reduced surface roughness. The methods include pretreating the metal layer with a local plasma formed from a hydrogen-containing precursor. The pretreated metal layer is then reacted with a halogen-containing precursor to form a halogenated metal layer having a halogenated etch product. A carbon-and-nitrogen-containing precursor reacts with the halogenated etch product to form a volatile etch product that can be removed in the gas phase from the etched surface of the metal layer. The surface roughness may be reduced by performing one or more plasma treatments on the etching metal layer after a plurality of etching sequences. Surface roughness is also reduced by controlling the temperature and length of time the metal layer is reacting with the etchant precursors.Type: ApplicationFiled: July 16, 2015Publication date: January 19, 2017Applicant: Applied Materials, Inc.Inventors: Xikun Wang, David Cui, Anchuan Wang, Nitin K. Ingle
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Patent number: 9540736Abstract: Provided are methods for etching films comprising transition metals which help to minimize higher etch rates at the grain boundaries of polycrystalline materials. Certain methods pertain to amorphization of the polycrystalline material, other pertain to plasma treatments, and yet other pertain to the use of small doses of halide transfer agents in the etch process.Type: GrantFiled: July 8, 2015Date of Patent: January 10, 2017Assignee: Applied Materials, Inc.Inventors: Benjamin Schmiege, Nitin K. Ingle, Srinivas D. Nemani, Jeffrey W. Anthis, Xikun Wang, Jie Liu, David Benjaminson
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Patent number: 9520303Abstract: Methods of selectively etching aluminum and aluminum layers from the surface of a substrate are described. The etch selectively removes aluminum materials relative to silicon-containing films such as silicon, polysilicon, silicon oxide, silicon carbon nitride, silicon oxycarbide and/or silicon nitride. The methods include exposing aluminum materials (e.g. aluminum) to remotely-excited chlorine (Cl2) in a substrate processing region. A remote plasma is used to excite the chlorine and a low electron temperature is maintained in the substrate processing region to achieve high etch selectivity. Aluminum oxidation may be broken through using a chlorine-containing precursor or a bromine-containing precursor excited in a plasma or using no plasma-excitation, respectively.Type: GrantFiled: August 14, 2014Date of Patent: December 13, 2016Assignee: Applied Materials, Inc.Inventors: Xikun Wang, Anchuan Wang, Nitin K. Ingle
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Patent number: 9478434Abstract: A method of removing titanium nitride hardmask is described. The hardmask resides above a low-k dielectric layer prior to removal and the low-k dielectric layer retains a relatively low net dielectric constant after the removal process. The low-k dielectric layer may be part of a dual damascene structure having copper at the bottom of the vias. A non-porous carbon layer is deposited prior to the titanium nitride hardmask removal to protect the low-k dielectric layer and the copper. The titanium nitride hardmask is removed with a gas-phase etch using plasma effluents formed in a remote plasma from a chlorine-containing precursor. Plasma effluents within the remote plasma are flowed into a substrate processing region where the plasma effluents react with the titanium nitride.Type: GrantFiled: November 17, 2014Date of Patent: October 25, 2016Assignee: Applied Materials, Inc.Inventors: Xikun Wang, Mandar Pandit, Zhenjiang Cui, Mikhail Korolik, Anchuan Wang, Nitin K. Ingle, Jie Liu