Patents by Inventor Xikun Wang

Xikun Wang has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20030173333
    Abstract: A process for etching a substrate and removing etch residue deposited on the surfaces in the etching chamber has two stages. In the first stage, an energized first process gas is provided in the chamber, and in the second stage, an energized second process gas is provided in the chamber. The energized first process gas comprises SF6 and Ar, the volumetric flow ratio of SF6 to other components of the first process gas being from about 5:1 to about 1:10. The energized second process gas comprises CF4 and Ar, the volumetric flow ratio of CF4 to other components of the second process gas being from about 1:0 to about 1:10.
    Type: Application
    Filed: February 3, 2003
    Publication date: September 18, 2003
    Applicant: Applied Materials, Inc.
    Inventors: Xikun Wang, Scott Williams, Shaoher X. Pan
  • Patent number: 6527968
    Abstract: A process for etching a substrate 25 in an etching chamber 105, and simultaneously removing etch residue deposited on the surfaces of the walls 110 and components of the etching chamber 105. In one version, a two-stage method of opening a nitride mask layer on the substrate includes a first stage of providing a highly chemically reactive process gas in the chamber 105 to etch the nitride layer 32 and/or an underlying oxide layer 34, and a second stage of providing a less chemically reactive process gas in the chamber to etch the nitride layer 32 and/or the oxide layer 34 at a slower rate than the first stage. The first and second stage process gases may each comprise a fluorine containing gas, with the fluorine ratio of the first gas higher than the fluorine ratio of the second gas.
    Type: Grant
    Filed: March 27, 2000
    Date of Patent: March 4, 2003
    Assignee: Applied Materials Inc.
    Inventors: Xikun Wang, Scott Williams, Shaoher X. Pan
  • Patent number: 6136211
    Abstract: A process for etching a substrate 25 in an etching chamber 30, and simultaneously cleaning a thin, non-homogeneous, etch residue deposited on the surfaces of the walls 45 and components of the etching chamber 30. In the etching step, process gas comprising etchant gas is used to etch a substrate 25 in the etching chamber 30 thereby depositing etch residue inside the chamber 30. Cleaning gas is added to the process gas for a sufficient time and in a volumetric flow ratio that is sufficiently high, to react with and remove substantially all the etch residue deposited by the process gas. The present method advantageously cleans the etch residue in the chamber 30, during the etching process, and without use of separate cleaning, conditioning, and seasoning process steps.
    Type: Grant
    Filed: November 12, 1997
    Date of Patent: October 24, 2000
    Assignee: Applied Materials, Inc.
    Inventors: Xue-Yu Qian, Zhi-Wen Sun, Weinan Jiang, Arthur Y. Chen, Gerald Zheyao Yin, Ming-Hsun Yang, Ming-Hsun Kuo, David S. L. Mui, Jeffrey Chinn, Shaoher X. Pan, Xikun Wang