Patents by Inventor Xikun Wang
Xikun Wang has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20150345028Abstract: Methods are described herein for etching metal films which are difficult to volatize. The methods include exposing a metal film to a chlorine-containing precursor (e.g. Cl2). Chlorine is then removed from the substrate processing region. A carbon-and-nitrogen-containing precursor (e.g. TMEDA) is delivered to the substrate processing region to form volatile metal complexes which desorb from the surface of the metal film. The methods presented remove metal while very slowly removing the other exposed materials. A thin metal oxide layer may be present on the surface of the metal layer, in which case a local plasma from hydrogen may be used to remove the oxygen or amorphize the near surface region, which has been found to increase the overall etch rate.Type: ApplicationFiled: May 28, 2014Publication date: December 3, 2015Inventors: Xikun Wang, Jie Liu, Anchuan Wang, Nitin K. Ingle, Jeffrey W. Anthis, Benjamin Schmiege
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Publication number: 20150345029Abstract: Methods are described herein for etching metal films, such as cobalt and nickel, which are difficult to volatize. The methods include exposing a metal film to a chlorine-containing precursor (e.g. Cl2). Chlorine is then removed from the substrate processing region. A carbon-and-nitrogen-containing precursor (e.g. TMEDA) is delivered to the substrate processing region to form volatile metal complexes which desorb from the surface of the metal film. The methods presented remove metal while very slowly removing the other exposed materials.Type: ApplicationFiled: May 28, 2014Publication date: December 3, 2015Inventors: Xikun Wang, Nitin K. Ingle
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Patent number: 9190293Abstract: Methods of evenly etching tungsten liners from high aspect ratio trenches are described. The methods include ion bombardment of a patterned substrate having high aspect ratio trenches. The ion bombardment includes fluorine-containing ions and the ion bombardment may be stopped before breaking through the horizontal liner portion outside the trenches but near the opening of the trenches. The methods then include a remote plasma etch using plasma effluents formed from a fluorine-containing precursor. Plasma effluents from the remote plasma are flowed into a substrate processing region where the plasma effluents react with the tungsten. The plasmas effluents react with exposed surfaces and remove tungsten from outside the trenches and on the sidewalls of the trenches. The plasma effluents pass through an ion suppression element positioned between the remote plasma and the substrate processing region.Type: GrantFiled: March 17, 2014Date of Patent: November 17, 2015Assignee: Applied Materials, Inc.Inventors: Xikun Wang, Jie Liu, Anchuan Wang, Nitin K. Ingle
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Publication number: 20150262829Abstract: Methods of evenly etching tungsten liners from high aspect ratio trenches are described. The methods include a remote plasma etch using plasma effluents formed from a fluorine-containing precursor and a high flow of helium. Plasma effluents from the remote plasma are flowed into a substrate processing region where the plasma effluents react with tungsten coating a patterned substrate having high aspect ratio trenches. The plasmas effluents react with exposed surfaces and evenly remove tungsten from outside the trenches and on the sidewalls of the trenches. The plasma effluents pass through an ion suppression element positioned between the remote plasma and the substrate processing region. Optionally, the methods may include concurrent ion bombardment of the patterned substrate to help remove potentially thicker horizontal tungsten regions, e.g., at the bottom of the trenches or between trenches.Type: ApplicationFiled: March 17, 2014Publication date: September 17, 2015Applicant: Applied Materials, Inc.Inventors: Seung Park, Xikun Wang, Jie Liu, Anchuan Wang, Sang-jin Kim
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Publication number: 20150206764Abstract: Methods of selectively etching titanium oxide relative to silicon oxide, silicon nitride and/or other dielectrics are described. The methods include a remote plasma etch using plasma effluents formed from a fluorine-containing precursor and/or a chlorine-containing precursor. Plasma effluents from the remote plasma are flowed into a substrate processing region where the plasma effluents react with the titanium oxide. The plasmas effluents react with exposed surfaces and selectively remove titanium oxide while very slowly removing other exposed materials. A direction sputtering pretreatment is performed prior to the remote plasma etch and enables an increased selectivity as well as a directional selectivity. In some embodiments, the titanium oxide etch selectivity results partly from the presence of an ion suppression element positioned between the remote plasma and the substrate processing region.Type: ApplicationFiled: January 17, 2014Publication date: July 23, 2015Applicant: APPLIED MATERIALS, INC.Inventors: Xikun WANG, Lin XU, Anchuan WANG, Nitin K. INGLE
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Publication number: 20150179464Abstract: Methods of selectively etching tungsten relative to silicon-containing films (e.g. silicon oxide, silicon carbon nitride and (poly)silicon) as well as tungsten oxide are described. The methods include a remote plasma etch formed from a fluorine-containing precursor and/or hydrogen (H2). Plasma effluents from the remote plasma are flowed into a substrate processing region where the plasma effluents react with the tungsten. The plasma effluents react with exposed surfaces and selectively remove tungsten while very slowly removing other exposed materials. Sequential and simultaneous methods are included to remove thin tungsten oxide which may, for example, result from exposure to the atmosphere.Type: ApplicationFiled: February 9, 2015Publication date: June 25, 2015Inventors: Xikun Wang, Ching-Mei Hsu, Nitin K. Ingle, Zihui Li, Anchuan Wang
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Publication number: 20150170935Abstract: Methods of evenly etching tungsten liners from high aspect ratio trenches are described. The methods include ion bombardment of a patterned substrate having high aspect ratio trenches. The ion bombardment includes fluorine-containing ions and the ion bombardment may be stopped before breaking through the horizontal liner portion outside the trenches but near the opening of the trenches. The methods then include a remote plasma etch using plasma effluents formed from a fluorine-containing precursor. Plasma effluents from the remote plasma are flowed into a substrate processing region where the plasma effluents react with the tungsten. The plasmas effluents react with exposed surfaces and remove tungsten from outside the trenches and on the sidewalls of the trenches. The plasma effluents pass through an ion suppression element positioned between the remote plasma and the substrate processing region.Type: ApplicationFiled: March 17, 2014Publication date: June 18, 2015Applicant: Applied Materials, Inc.Inventors: Xikun Wang, Jie Liu, Anchuan Wang, Nitin K. Ingle
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Patent number: 9040422Abstract: Methods are described herein for selectively etching titanium nitride relative to dielectric films, which may include, for example, alternative metals and metal oxides lacking in titanium and/or silicon-containing films (e.g. silicon oxide, silicon carbon nitride and low-K dielectric films). The methods include a remote plasma etch formed from a chlorine-containing precursor. Plasma effluents from the remote plasma are flowed into a substrate processing region where the plasma effluents react with the titanium nitride. The plasma effluents react with exposed surfaces and selectively remove titanium nitride while very slowly removing the other exposed materials. The substrate processing region may also contain a plasma to facilitate breaking through any titanium oxide layer present on the titanium nitride. The plasma in the substrate processing region may be gently biased relative to the substrate to enhance removal rate of the titanium oxide layer.Type: GrantFiled: June 3, 2013Date of Patent: May 26, 2015Assignee: Applied Materials, Inc.Inventors: Xikun Wang, Anchuan Wang, Nitin K. Ingle, Dmitry Lubomirsky
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Publication number: 20150129541Abstract: Methods of selectively etching aluminum and aluminum layers from the surface of a substrate are described. The etch selectively removes aluminum materials relative to silicon-containing films such as silicon, polysilicon, silicon oxide, silicon carbon nitride, silicon oxycarbide and/or silicon nitride. The methods include exposing aluminum materials (e.g. aluminum) to remotely-excited chlorine (Cl2) in a substrate processing region. A remote plasma is used to excite the chlorine and a low electron temperature is maintained in the substrate processing region to achieve high etch selectivity. Aluminum oxidation may be broken through using a chlorine-containing precursor or a bromine-containing precursor excited in a plasma or using no plasma-excitation, respectively.Type: ApplicationFiled: August 14, 2014Publication date: May 14, 2015Inventors: Xikun Wang, Anchuan Wang, Nitin K. Ingle
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Publication number: 20150129545Abstract: Methods of selectively etching metal-containing materials from the surface of a substrate are described. The etch selectively removes metal-containing materials relative to silicon-containing films such as silicon, polysilicon, silicon oxide, silicon germanium and/or silicon nitride. The methods include exposing metal-containing materials to halogen containing species in a substrate processing region. A remote plasma is used to excite the halogen-containing precursor and a local plasma may be used in embodiments. Metal-containing materials on the substrate may be pretreated using moisture or another OH-containing precursor before exposing the resulting surface to remote plasma excited halogen effluents in embodiments.Type: ApplicationFiled: October 13, 2014Publication date: May 14, 2015Applicant: Applied Materials, Inc.Inventors: Nitin K. Ingle, Jessica Sevanne Kachian, Lin Xu, Soonam Park, Xikun Wang, Jeffrey W. Anthis
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Publication number: 20150129546Abstract: Methods of selectively etching metal-containing materials from the surface of a substrate are described. The etch selectively removes metal-containing materials relative to silicon-containing films such as silicon, polysilicon, silicon oxide, silicon germanium, silicon carbide, silicon carbon nitride and/or silicon nitride. The methods include exposing metal-containing materials to halogen containing species in a substrate processing region. No plasma excites the halogen-containing precursor either remotely or locally in embodiments.Type: ApplicationFiled: October 14, 2014Publication date: May 14, 2015Applicant: APPLIED MATERIALS, INC.Inventors: Nitin K. Ingle, Jessica Sevanne Kachian, Lin Xu, Soonam Park, Xikun Wang, Jeffrey W. Anthis
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Patent number: 8980763Abstract: Methods of selectively etching tungsten relative to silicon-containing films (e.g. silicon oxide, silicon carbon nitride and (poly)silicon) as well as tungsten oxide are described. The methods include a remote plasma etch formed from a fluorine-containing precursor and/or hydrogen (H2). Plasma effluents from the remote plasma are flowed into a substrate processing region where the plasma effluents react with the tungsten. The plasma effluents react with exposed surfaces and selectively remove tungsten while very slowly removing other exposed materials. Sequential and simultaneous methods are included to remove thin tungsten oxide which may, for example, result from exposure to the atmosphere.Type: GrantFiled: March 15, 2013Date of Patent: March 17, 2015Assignee: Applied Materials, Inc.Inventors: Xikun Wang, Ching-Mei Hsu, Nitin K. Ingle, Zihui Li, Anchuan Wang
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Patent number: 8951429Abstract: Methods of selectively etching tungsten oxide relative to tungsten, silicon oxide, silicon nitride and/or titanium nitride are described. The methods include a remote plasma etch using plasma effluents formed from a fluorine-containing precursor in combination with ammonia (NH3). Plasma effluents from the remote plasma are flowed into a substrate processing region where the plasma effluents react with the tungsten oxide. The plasmas effluents react with exposed surfaces and selectively remove tungsten oxide while very slowly removing other exposed materials. Increasing a flow of ammonia during the process removes a typical skin of tungsten oxide having higher oxidation coordination number first and then selectively etching lower oxidation tungsten oxide. In some embodiments, the tungsten oxide etch selectivity results partly from the presence of an ion suppression element positioned between the remote plasma and the substrate processing region.Type: GrantFiled: December 20, 2013Date of Patent: February 10, 2015Assignee: Applied Materials, Inc.Inventors: Jie Liu, Xikun Wang, Seung Park, Mikhail Korolik, Anchuan Wang, Nitin K. Ingle
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Publication number: 20140256131Abstract: Methods are described herein for selectively etching titanium nitride relative to dielectric films, which may include, for example, alternative metals and metal oxides lacking in titanium and/or silicon-containing films (e.g. silicon oxide, silicon carbon nitride and low-K dielectric films). The methods include a remote plasma etch formed from a chlorine-containing precursor. Plasma effluents from the remote plasma are flowed into a substrate processing region where the plasma effluents react with the titanium nitride. The plasma effluents react with exposed surfaces and selectively remove titanium nitride while very slowly removing the other exposed materials. The substrate processing region may also contain a plasma to facilitate breaking through any titanium oxide layer present on the titanium nitride. The plasma in the substrate processing region may be gently biased relative to the substrate to enhance removal rate of the titanium oxide layer.Type: ApplicationFiled: June 3, 2013Publication date: September 11, 2014Inventors: Xikun Wang, Anchuan Wang, Nitin K. Ingle, Dmitry Lubomirsky
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Publication number: 20140154889Abstract: Methods of selectively etching tungsten relative to silicon-containing films (e.g. silicon oxide, silicon carbon nitride and (poly)silicon) as well as tungsten oxide are described. The methods include a remote plasma etch formed from a fluorine-containing precursor and/or hydrogen (H2). Plasma effluents from the remote plasma are flowed into a substrate processing region where the plasma effluents react with the tungsten. The plasma effluents react with exposed surfaces and selectively remove tungsten while very slowly removing other exposed materials. Sequential and simultaneous methods are included to remove thin tungsten oxide which may, for example, result from exposure to the atmosphere.Type: ApplicationFiled: March 15, 2013Publication date: June 5, 2014Applicant: Applied Materials, Inc.Inventors: Xikun Wang, Ching-Mei Hsu, Nitin K. Ingle, Zihui Li, Anchuan Wang
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Publication number: 20120091095Abstract: In-situ low pressure chamber cleans and gas nozzle apparatus for plasma processing systems employing in-situ deposited chamber coatings. Certain chamber clean embodiments for conductor etch applications include an NF3-based plasma clean performed at pressures below 30 mT to remove in-situ deposited SiOx coatings from interior surfaces of a gas nozzle hole. Embodiments include a gas nozzle with bottom holes dimensioned sufficiently small to reduce or prevent the in-situ deposited chamber coatings from building up a SiOx deposits on interior surfaces of a nozzle hole.Type: ApplicationFiled: June 30, 2011Publication date: April 19, 2012Applicant: Applied Materials, Inc.Inventors: Xikun WANG, Andrew NGUYEN, Changhun LEE, Xiaoming HE, Meihua SHEN
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Patent number: 8016948Abstract: Disclosed herein is a cleaning method useful in removing contaminants from a surface of a coating which comprises an oxide or fluoride of a Group III B metal. Typically the coating overlies an aluminum substrate which is present as part of a semiconductor processing apparatus. The coating typically comprises an oxide or a fluoride of Y, Sc, La, Ce, Eu, Dy, or the like, or yttrium-aluminum-garnet (YAG). The coating may further comprise about 20 volume % or less of Al2O3.Type: GrantFiled: September 22, 2008Date of Patent: September 13, 2011Assignee: Applied Materials, Inc.Inventors: Xikun Wang, Li Xu, Jennifer Y. Sun
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Patent number: 7964512Abstract: In one implementation, a method is provided for etching a high k dielectric material in a plasma etch reactor, the method comprising plasma etching the high k dielectric material with a first plasma gas reactant mixture having BCl3. The high k dielectric material may include Al2O3 in a stack having a silicon layer. The etching may include supplying a passivation gas, for example C2H4, and may further include supplying a diluent gas such as a noble gas, for example He. In some implementations, the etching may be performed with a reactive ion etch process.Type: GrantFiled: August 22, 2005Date of Patent: June 21, 2011Assignee: Applied Materials, Inc.Inventors: Xikun Wang, Wei Liu, Yan Du, Mei Hua Shen
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Publication number: 20110036874Abstract: Disclosed herein is a gas distribution plate for use in a gas distribution assembly for a processing chamber, where the gas distribution plate is fabricated from a solid yttrium oxide-comprising substrate, which may also include aluminum oxide. The gas distribution plate includes a plurality of through-holes, which are typically crescent-shaped. Through-holes which have been formed in the solid yttrium oxide-comprising substrate by ultrasonic drilling perform particularly well. The solid yttrium oxide-comprising substrate typically comprises at least 99.9% yttrium oxide, and has a density of at least 4.92 g/cm3, a water absorbency of about 0.02% or less, and an average grain size within the range of about 10 ?m to about 25 ?m. Also disclosed herein are methods for fabricating and cleaning the yttrium oxide-comprising gas distribution plate.Type: ApplicationFiled: October 18, 2010Publication date: February 17, 2011Inventors: Xikun Wang, Li Xu, Jennifer Y. Sun
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Patent number: 7846264Abstract: Disclosed herein is a gas distribution plate for use in a gas distribution assembly for a processing chamber, where the gas distribution plate is fabricated from a solid yttrium oxide-comprising substrate, which may also include aluminum oxide. The gas distribution plate includes a plurality of through-holes, which are typically crescent-shaped. Through-holes which have been formed in the solid yttrium oxide-comprising substrate by ultrasonic drilling perform particularly well. The solid yttrium oxide-comprising substrate typically comprises at least 99.9% yttrium oxide, and has a density of at least 4.92 g/cm3, a water absorbency of about 0.02% or less, and an average grain size within the range of about 10 ?m to about 25 ?m. Also disclosed herein are methods for fabricating and cleaning the yttrium oxide-comprising gas distribution plate.Type: GrantFiled: November 3, 2006Date of Patent: December 7, 2010Assignee: Applied Materials, Inc.Inventors: Xikun Wang, Li Xu, Jennifer Y. Sun