Abstract: An ultra-thin miniature pump applied to transport a fluid includes a main body, a rotor, and a stator. The main body includes a cover part and a bottom part. A joint surface between the cover part and the bottom part possesses an anti-leakage device, and a chamber including a suction port and a discharge port is formed inside the main body. The rotor disposed in the chamber includes a magnet set, an impeller, and a central shaft. The magnet set is connected on the surface of the impeller, and the impeller with the magnet set is aligned by the central shaft and rotates in coaxial. The stator disposed in the chamber includes a plurality of coils corresponding to the magnet set axially. The coils and the magnet set generate an axial magnetic flux to make the impeller rotate for transporting the fluid from the suction port to the discharge port.

Abstract: This invention provides a device, method and system for implementing an echo control on hand-free phones, including an echo eliminator as a primary component. The method in use is listed as follows. First of all, local speech signals on a sending channel as well as remote speech signals on a receiving channel are sampled. Then call status of a current network is determined based on energy of the obtained remote and local speech signals samples. Finally, a corresponding echo control treatment to the speech signals traveling through the sending channel according to the resulting call status is given. As a result, the echo in a digital hand-free communication system can be efficiently eliminated.

Abstract: Electrostatic discharge (ESD) devices for protection of integrated circuits are described. ESD devices may be configured to provide uniform breakdown of finger regions extending through a first region of a substrate having a first conductivity type and into a second region of the substrate more lightly doped with impurities of the first conductivity type. Such an EDS device may include a collector region having a middle region highly doped with impurities of the first conductivity type. The middle region may be proximate to a layer that is lightly doped with impurities of the first conductivity type and a layer that is doped with impurities of the second conductivity type. The collector region may decrease the breakdown voltage of the EDS device. The lightly doped region may be eliminated in the collector region and an interlayer insulating layer is formed in contact with the top side regions and the middle region.

Abstract: An electrostatic discharge device may provide better protection of an integrated circuit by more uniform breakdown of a plurality of finger regions. The plurality of finger regions may extend through a first region of a substrate having a first conductivity type and into a second region of the substrate more lightly doped with impurities of the first conductivity type. An electrostatic discharge device may include a collector region having a middle region that may be highly doped with impurities of the first conductivity type. The middle region may be proximate to a layer that is lightly doped with impurities of the first conductivity type and a layer that is doped with impurities of the second conductivity type. The collector region may decrease the breakdown voltage of the electrostatic discharge device.

Abstract: An electrostatic discharge device may provide better protection of an integrated circuit by more uniform breakdown of a plurality of finger regions. The plurality of finger regions may extend through a first region of a substrate having a first conductivity type and into a second region of the substrate more lightly doped with impurities of the first conductivity type. An electrostatic discharge device may include a collector region having a middle region that may be highly doped with impurities of the first conductivity type. The middle region may be proximate to a layer that is lightly doped with impurities of the first conductivity type and a layer that is doped with impurities of the second conductivity type. The collector region may decrease the breakdown voltage of the electrostatic discharge device.

Abstract: The present invention provides a high efficiency ESD circuit that requires less space through uniform activation of multiple emitter fingers of a transistor structure containing an integral Zener diode. The Zener diode is able to lower the protection circuit trigger threshold from around 18 volts to around 7 volts. This method minimizes series impedance of the signal path, thereby rendering an NPN structure that is particularly well suited for protecting bipolar and CMOS input and output buffers. The ESD circuit of the present invention provides a relatively low shunt capacitance (typically <0.5 pF) and series resistance (typically <0.5 ohm) that are desirable for input and output circuits of present and future contemplated generations of sub-micron bipolar/BiCMOS circuit processes.