Abstract: A system and method suitable for removing both carbon-based contaminants and oxygen-based contaminants from a substrate within a single process chamber are disclosed.

Abstract: A memory device and a management method thereof are provided. The memory device includes a controller and at least one memory channel. The memory channel includes at least one memory chip. The at least one memory chip is commonly coupled to the controller through an interrupt signal wire. The at least one memory chip generates at least one local interrupt signal and performs a logic operation on the at least one local interrupt signal to generate a common interrupt signal. The interrupt signal wire is configured to transmit the common interrupt signal to the controller.

Abstract: Systems of reducing devitrification within a chemical vapor deposition system can include a susceptor support ring that is configured to be positioned between a gas inlet and a gas outlet of a chamber passage. An example system can also include a getter support comprising a support base and one or more recesses therein. Each of the one or more recesses can be arranged to receive corresponding one or more support elements that are configured to support the getter plate. At least a portion of the getter support may include a coating comprising silicon carbide (SiC) having a thickness of at least about 50 microns. The getter support may be arranged to be disposed a maximum distance of between about 1 mm and about 10 mm from the susceptor support ring.

Abstract: A reflector includes a reflector body having a slotted surface, a planar surface, and an ellipsoidal surface. The planar surface is opposite the slotted surface and is separated from the slotted surface by a thickness of the reflector body. The ellipsoidal surface is offset from the planar surface, is opposite the slotted surface and separated from the slotted surface by the thickness of the reflector body and spans the slotted surface of the reflector body. The ellipsoidal surface defines an elliptical profile that is orthogonal relative to the planar surface to concentrate heat flux at a distal focus of the elliptical profile using electromagnetic radiation reflected by the ellipsoidal surface of the reflector body. Semiconductor processing systems and material layer deposition methods are also described.

Abstract: A lift pin includes a lift pin body arranged along a lift pin axis having a contact pad, a stem segment, a neck segment, and a span feature. The contact pad is defined at a first end of the lift pin body, the stem segment extends from the contact pad, and the neck segment extends from the stem segment. The span feature is defined at a second end of the lift pin body, is connected to the contact pad by the neck segment and the stem segment, and has a minor and major widths. The minor width is equivalent to a neck diameter defined by the neck segment, the major with is greater than the minor width, and the major width is greater than a stem diameter defined by the stem segment. Lift pin arrangements, semiconductor processing systems, and methods of making semiconductor processing systems are also described.

Abstract: Methods and apparatuses for decoupling the tuning of cross-substrate thickness variation and cross-substrate resistance variation in a gas injection system are described. A controller in a gas injection system may deposit, via control of the plurality of first mass flow controllers (MFCs) and the plurality of second MFCs, a material layer deposited on a substrate. The controller may adjust, via control of the plurality of first MFCs, a cross-substrate thickness variation of the material layer. The controller may adjust, via control of the plurality of second MFCs and independent of the cross-substrate thickness variation, cross-substrate resistivity variation of the material layer.

Abstract: In some embodiments, a method for semiconductor processing preclean includes removing an oxide layer from a substrate using anhydrous hydrogen fluoride in combination with water vapor. A system for the preclean may be configured to separate the anhydrous hydrogen fluoride and the water vapor until they are delivered to a common volume near the substrate. Corrosion within components of the system may be limited by purification of anhydrous hydrogen fluoride, passivation of components, changing component materials, and heating components. Passivation may be achieved by filling a gas delivery component with anhydrous hydrogen fluoride and allowing the anhydrous hydrogen fluoride to remain in the gas delivery component to form a passivation layer. Consistent water vapor delivery may be achieved in part by heating components using heaters.

Abstract: A liquid precursor container includes an inner container, an outer container, and a baffle member. The inner container has an inner base portion, an inner intermediate portion extending from the inner base portion, and an inner lid portion coupled to the inner base portion by the inner intermediate portion. The outer container envelops the inner container and has an outer base portion spaced apart from the inner base portion, an outer intermediate portion extending from the outer base portion and about the inner intermediate portion of the inner container, and an outer lid portion coupled to the outer base portion by the outer intermediate portion of the outer container. The baffle member is arranged between the inner lid portion of the inner container and the outer lid portion of the outer container to circulate liquid coolant about the inner container to cool a liquid precursor contained within the inner container.

Abstract: A liquid precursor container is provided. The liquid precursor container includes an inner container, an outer container, and a baffle member. The inner container has an inner base portion, an inner intermediate portion extending upwards from the inner base portion, and an inner lid portion coupled to the inner base portion by the inner intermediate portion. The outer container has an outer base portion spaced apart from the inner base portion of the inner container and an outer intermediate portion extending upwards from the outer base portion and about the inner intermediate portion of the inner container. The baffle member is arranged between the inner intermediate portion of the inner container and the outer intermediate portion of the outer container, extends upwards from the outer base portion of the outer container, and terminates between the inner lid portion and the inner base portion of the inner container.

Abstract: In some embodiments, a method for semiconductor processing preclean includes removing an oxide layer from a substrate using anhydrous hydrogen fluoride in combination with water vapor. A system for the preclean may be configured to separate the anhydrous hydrogen fluoride and the water vapor until they are delivered to a common volume near the substrate. Corrosion within components of the system may be limited by purification of anhydrous hydrogen fluoride, passivation of components, changing component materials, and heating components. Passivation may be achieved by filling a gas delivery component with anhydrous hydrogen fluoride and allowing the anhydrous hydrogen fluoride to remain in the gas delivery component to form a passivation layer. Consistent water vapor delivery may be achieved in part by heating components using heaters.

Abstract: An all-optical Diffractive Deep Neural Network (D2NN) architecture learns to implement various functions or tasks after deep learning-based design of the passive diffractive or reflective substrate layers that work collectively to perform the desired function or task. This architecture was successfully confirmed experimentally by creating 3D-printed D2NNs that learned to implement handwritten classifications and lens function at the terahertz spectrum. This all-optical deep learning framework can perform, at the speed of light, various complex functions and tasks that computer-based neural networks can implement, and will find applications in all-optical image analysis, feature detection and object classification, also enabling new camera designs and optical components that can learn to perform unique tasks using D2NNs. In alternative embodiments, the all-optical D2NN is used as a front-end in conjunction with a trained, digital neural network back-end.

Abstract: A light-emitting device and method for using quantum dot LEDs are provided in the present application. The light-emitting device includes at least one quantum dot LED, wherein the quantum dot LED includes a first electrode, an electron transport layer, a quantum dot layer, a hole transport layer, and a second electrode which are sequentially stacked; a fluorescence quantum yield of quantum dots in the quantum dot layer is equal to or greater than 50%; a ratio of an average photon voltage to an operating voltage of the quantum dot LED is equal to or greater than 1; electroluminescence of the quantum dot LED includes thermoelectrically-assisted up-conversion luminescence. The quantum dot LED can achieve higher external power conversion efficiency in the light-emitting device.

Abstract: A dual adaptive training method of photonic neural networks (PNN), includes constructing, in a computer, a PNN numerical model including a PNN physical model and a systematic error prediction network model, where the PNN physical model is an error-free ideal PNN physical model of a PNN physical system, the systematic error prediction network model is an error model of the PNN physical system; determining measurement values of the PNN physical system and measurement values of the PNN numerical model, where the measurement values of the PNN physical system include final output values of the PNN physical system, and the measurement values of the PNN numerical model include final output values of the PNN numerical model; determining a similarity loss function based on comparison results between the measurement values of the PNN physical system and the measurement values of the PNN numerical model; determining a task loss function based on fused results of the measurement values of the PNN physical system and the

Abstract: A reactor system including a gas distribution assembly and method of using the reactor system are disclosed. The gas distribution assembly includes a gas distribution device, a gas expansion area, and a showerhead plate downstream of the gas distribution device and the expansion area.

Abstract: Methods and systems for growing silicon carbide epitaxial layers are described. In one example, a reactor system with multiple reactor modules may include a heating load/lock chamber and a cooling load/lock chamber. In another example, a reactor may be heated by separate sets of coils inductively heating a susceptor, which heats graphite near one or more wafers. Multiple pyrometers may measure the temperature of the graphite walls at different locations. Based on temperature differences and/or temperature gradients, a temperature controller may adjust power provided to one or more sets of coils. In yet another example, separations between a wafer carrier and a wafer may be adjusted.

Abstract: Systems and methods controlling the pressure differential between two sealed chambers connected by a gate valve in preparation for a gate valve opening event. Such systems and methods may adjust gas pressure in at least one of the chambers, if needed, until the pressure differential between the two chambers is at a predetermined pressure differential level. In some more specific examples, one chamber may constitute a substrate handling chamber, the other chamber may constitute a reaction chamber (e.g., for depositing one or more layers on a surface of a substrate), and the gate valve opening event may allow a substrate to be transferred from one chamber to the other (e.g., from the reaction chamber into the substrate handling chamber).