Abstract: A susceptor for semiconductor substrate processing is disclosed herein. In some embodiments, the susceptor may comprise an inner susceptor portion and an outer susceptor portion. The susceptor portions may self-align via complementary features, such as tabs on the outer susceptor and recesses on the inner susceptor portion. The inner susceptor portion may contain several contact pads with which to support a wafer during semiconductor processing. In some embodiments, the contact pads are hemispherical to reduce contact area with the wafer, thereby reducing risk of backside damage. The inner susceptor portion may contain a cavity with which to receive a thermocouple. In some embodiments, the diameter of the cavity is greater than the diameter of the thermocouple such that the thermocouple does not contact the walls of the cavity during processing, thereby providing highly accurate temperature measurements.

Abstract: A touch panel and a touch display are disclosed. The touch panel mainly comprises a light transmissive substrate and two sensing units. The two sensing units are disposed oppositely through the light transmissive substrate. A mesh width of a metal mesh in the two sensing units is large, which can increase a variation of capacitance value and improve the touch sensitivity. In addition, an angle between metal lines with sensing function is configured in a random manner under a certain condition to reduce an area of nodes, thus a rounding effect at the nodes can be effectively reduced or eliminated. The metal meshes of the two sensing units disposed oppositely are staggered with a non-conductive node-free pattern to form a staggered pattern with irregular polygons, so that no interference fringes would be generated when the touch panel is used together with display panels of various mainstream sizes.

Abstract: The present invention provides a fog dissipation device and a cooling tower, and relates to the technical field of cooling towers. The fog dissipation device comprises: a first flow path and a second flow path which are stacked to exchange heat between a first air flow and a second air flow flowing from bottom to top; a first outflow port through which the first air flow flowing out of the first flow path is discharged to the upper side of the fog dissipation device; and, a second outflow port through which the second air flow flowing out of the second flow path is discharged to the upper side of the fog dissipation device, wherein the first outflow port and the second outflow port are alternately stacked. The fog dissipation device can play a role in water-saving fog dissipation. The cooling tower comprises the fog dissipation device described above.

Abstract: A charging gun is applicable to a charger station. The charging gun includes a charging gun body and a charge state display apparatus. The charge state display apparatus includes a charge state sensor, a display light module, and a controller. The charge state sensor is configured to sense a charge state of the charger station. The display light module is arranged on the charging gun body. The display light module includes a first light-emitting element, a second light-emitting element, and a third light-emitting element. The controller is electrically connected to the charge state sensor and the display light module. The controller is configured to control the first light-emitting element, the second light-emitting element, or the third light-emitting element to emit light according to the charge state.

Abstract: An all-optical Diffractive Deep Neural Network (D2NN) architecture learns to implement various functions or tasks after deep learning-based design of the passive diffractive or reflective substrate layers that work collectively to perform the desired function or task. This architecture was successfully confirmed experimentally by creating 3D-printed D2NNs that learned to implement handwritten classifications and lens function at the terahertz spectrum. This all-optical deep learning framework can perform, at the speed of light, various complex functions and tasks that computer-based neural networks can implement, and will find applications in all-optical image analysis, feature detection and object classification, also enabling new camera designs and optical components that can learn to perform unique tasks using D2NNs. In alternative embodiments, the all-optical D2NN is used as a front-end in conjunction with a trained, digital neural network back-end.

Abstract: A reactor system may comprise a first reaction chamber and a second reaction chamber. The first and second reaction chambers may each comprise a reaction space enclosed therein, a susceptor disposed within the reaction space, and a fluid distribution system in fluid communication with the reaction space. The susceptor in each reaction chamber may be configured to support a substrate. The reactor system may further comprise a first reactant source, wherein the first reaction chamber and the second reaction chamber are fluidly coupled to the first reactant source at least partially by a first reactant shared line. The reactor system may be configured to deliver a first reactant from the first reactant source to the first reaction chamber and a second reaction chamber through the first reactant shared line.

Abstract: A substrate support includes a disc body with an upper surface and an opposite lower surface arranged along a rotation axis. The upper surface has a circular concave portion extending about the rotation axis, an annular ledge portion extending circumferentially about the concave portion, and an annular rim portion extending circumferentially about the ledge portion connecting to the concave portion of the disc body by the ledge portion of the disc body. The ledge portion slopes downward radially outward from the rotation axis to seat a substrate on the disc body such that a beveled edge of the substrate is cantilevered above the ledge portion of the upper surface of the disc body. Substrate support assemblies, semiconductor processing systems, and film deposition methods are also described.

Abstract: A semiconductor processing system includes a gas delivery module, and a chamber body connected to the gas delivery module. The divider has an aperture, is fixed within an interior of the chamber body, and separates an interior of the chamber body into upper and lower chambers, the aperture fluidly coupling the lower chamber to the upper chamber. A susceptor is arranged within the aperture. A controller is operably connected to the gas delivery module to purge the lower chamber with a first purge flow including an etchant while etching the upper chamber, purge the lower chamber with a second purge flow including the etchant while depositing a precoat in the upper chamber, and purge the lower chamber with a third purge flow including the etchant while depositing a film onto a substrate in the upper chamber. Film deposition methods and lower chamber etchant purge kits are also described.

Abstract: The present disclosure discloses a nonlinear all-optical deep-learning system and method with multistage space-frequency domain modulation. The system includes an optical input module, configured to convert input information to optical information, a multistage space-frequency domain modulation module, configured to perform multistage space-frequency domain modulation on the optical information generated by the optical input module so as to generate modulated optical information, and an information acquisition module, configured to transform the modulated optical information onto a Fourier plane or an image plane, and to acquire the transformed optical information so as to generate processed optical information.

Abstract: Systems of reducing devitrification within a chemical vapor deposition system can include a susceptor support ring that is configured to be positioned between a gas inlet and a gas outlet of a chamber passage. An example system can also include a getter support comprising a support base and one or more recesses therein. Each of the one or more recesses can be arranged to receive corresponding one or more support elements that are configured to support the getter plate. At least a portion of the getter support may include a coating comprising silicon carbide (SiC) having a thickness of at least about 50 microns. The getter support may be arranged to be disposed a maximum distance of between about 1 mm and about 10 mm from the susceptor support ring.

Abstract: A reflector includes a reflector body arranged to overlap a reaction chamber of a semiconductor processing system. The reflector body has a grooved surface and a reflective surface extending between a first longitudinal edge of the reflector body and a second longitudinal edge of the reflector body, the reflective surface spaced apart from the grooved surface by a thickness of the reflector body. The grooved surface and the reflective surface define a pyrometer port, two or more elongated slots, and two or more shortened extending through the thickness of the reflector body. The shortened slots outnumber the elongated slots to bias issue of a coolant against the reaction chamber toward the second longitudinal edge of the reflector body. Cooling kits, semiconductor processing systems, and methods of cooling a reaction chamber during deposition of a film onto a substrate supported within the reaction chamber are also described.

Abstract: A device and a method for generating a machine translation model and a machine translation device are disclosed. The device inputs a source training sentence of a source language and a dictionary data to a generator network so that the generator network outputs a target training sentence of a target language according to the source training sentence and the dictionary data. Then, the device inputs the target training sentence and a correct translation of the source training sentence to a discriminator network so as to calculate an error between the target training sentence and the correct translation according to the output of the discriminator network, and trains the generator network and the discriminator network respectively. The trained generator network is the machine translation model.

Abstract: A system and method for removing both carbon-based contaminants and oxygen-based contaminants from a semiconductor substrate within a single process chamber is disclosed. The invention may comprise utilization of remote plasma units and multiple gas sources to perform the process within the single process chamber.

Abstract: An all-optical Diffractive Deep Neural Network (D2NN) architecture learns to implement various functions or tasks after deep learning-based design of the passive diffractive or reflective substrate layers that work collectively to perform the desired function or task. This architecture was successfully confirmed experimentally by creating 3D-printed D2NNs that learned to implement handwritten classifications and lens function at the terahertz spectrum. This all-optical deep learning framework can perform, at the speed of light, various complex functions and tasks that computer-based neural networks can implement, and will find applications in all-optical image analysis, feature detection and object classification, also enabling new camera designs and optical components that can learn to perform unique tasks using D2NNs. In alternative embodiments, the all-optical D2NN is used as a front-end in conjunction with a trained, digital neural network back-end.

Abstract: A susceptor has a circular pocket portion, an annular ledge portion, and an annular rim ledge portion. The circular pocket portion is arranged along a rotation axis and has a perforated surface. The annular ledge portion extends circumferentially about pocket portion and has ledge surface that slopes axially upward from the perforated surface. The rim portion extends circumferentially about the ledge portion and is connected to the pocket portion by the ledge portion of the susceptor. The susceptor has one or more of a tuned pocket, a contact break, a precursor vent, and a purge channel located radially outward of the perforated surface to control deposition of a film onto a substrate supported by the susceptor. Semiconductor processing systems, film deposition methods, and methods of making susceptors are also described.

Abstract: A packing module includes first and second flow paths which exchange heat between water sprayed from above and air flowing from below; a first import portion for importing water sprayed from one side of the packing module into the first flow path; a second import portion for importing water sprayed from the other side of the packing module into the second flow path; a first export portion for guiding water flowing out from the first water path to one side of the packing module for discharging; and, a second export portion for guiding water flowing out from the second water path to the other side of the packing module for discharging. Two flow paths in the packing module operate in different operation modes, so that water or wind flows through one flow path to cool water while air flows through the other flow path for heat exchange through partition walls.

Abstract: A reactor system designed to provide accurate monitoring of wafer temperatures during deposition steps. The reactor system includes a pyrometer mounting assembly supporting and positioning three or more pyrometers (e.g., infrared (IR) pyrometers) relative to the reaction chamber to measure a center wafer temperature and an edge wafer temperature as well as reaction chamber temperature. The pyrometer mounting assembly provides a small spot size or temperature sensing area with the edge pyrometer to accurately measure edge wafer temperatures. A jig assembly, and installation method for each tool setup, is provided for use in achieving accurate alignment of the IR pyrometer sensing spot (and the edge pyrometer) relative to the wafer, when the pyrometer mounting assembly is mounted upon a lamp bank in the reactor system or in tool setup. The wafer edge temperature sensing with the reactor system assembled with proper alignment ensures accurate and repeatable measurement of wafer temperatures.

Abstract: A method of operating a reactor system to provide multi-zone substrate temperature control. The method includes, with a first pyrometer, sensing a temperature of a first zone of a substrate supported in the reactor system, and, with a second pyrometer, sensing a temperature of a second zone of the substrate. The method further includes, with a controller, comparing the temperatures of the first and second zones to setpoint temperatures for the first and second zones and, in response, generating control signals to control heating of the substrate. The method also includes controlling, based on the control signals, operations of a heater assembly operating to heat the substrate.

Abstract: In some embodiments, a method for semiconductor processing preclean includes removing an oxide layer from a substrate using anhydrous hydrogen fluoride in combination with water vapor. A system for the preclean may be configured to separate the anhydrous hydrogen fluoride and the water vapor until they are delivered to a common volume near the substrate. Corrosion within components of the system may be limited by purification of anhydrous hydrogen fluoride, passivation of components, changing component materials, and heating components. Passivation may be achieved by filling a gas delivery component with anhydrous hydrogen fluoride and allowing the anhydrous hydrogen fluoride to remain in the gas delivery component to form a passivation layer. Consistent water vapor delivery may be achieved in part by heating components using heaters.

Abstract: A method of operating a reactor system to provide wafer temperature gradient control is provided. The method includes operating a center temperature sensor, a middle temperature sensor, and an edge temperature sensor to sense a temperature of a center zone of a wafer on a susceptor in reaction chamber of the reactor system, to sense a temperature of a middle zone of the wafer, and to sense a temperature of an edge zone of the wafer. The temperatures of the center, middle, and edge zones of the wafer are processed with a controller to generate control signals based on a predefined temperature gradient for the wafer. First, second, and third sets of heater lamps are operated based on the temperature of the center, middle, and edge zones to heat the center, the middle, and the edge zone of the wafer. Reactor systems are also described.