Abstract: A reactor system including a gas distribution assembly and method of using the reactor system are disclosed. The gas distribution assembly includes a gas distribution device, a gas expansion area, and a showerhead plate downstream of the gas distribution device and the expansion area.

Abstract: Systems and methods controlling the pressure differential between two sealed chambers connected by a gate valve in preparation for a gate valve opening event. Such systems and methods may adjust gas pressure in at least one of the chambers, if needed, until the pressure differential between the two chambers is at a predetermined pressure differential level. In some more specific examples, one chamber may constitute a substrate handling chamber, the other chamber may constitute a reaction chamber (e.g., for depositing one or more layers on a surface of a substrate), and the gate valve opening event may allow a substrate to be transferred from one chamber to the other (e.g., from the reaction chamber into the substrate handling chamber).

Abstract: Methods and systems for growing silicon carbide epitaxial layers are described. In one example, a reactor system with multiple reactor modules may include a heating load/lock chamber and a cooling load/lock chamber. In another example, a reactor may be heated by separate sets of coils inductively heating a susceptor, which heats graphite near one or more wafers. Multiple pyrometers may measure the temperature of the graphite walls at different locations. Based on temperature differences and/or temperature gradients, a temperature controller may adjust power provided to one or more sets of coils. In yet another example, separations between a wafer carrier and a wafer may be adjusted.

Abstract: A memory device and a management method thereof are provided. The memory device includes a controller and at least one memory channel. The memory channel includes at least one memory chip. The at least one memory chip is commonly coupled to the controller through an interrupt signal wire. The at least one memory chip generates at least one local interrupt signal and performs a logic operation on the at least one local interrupt signal to generate a common interrupt signal. The interrupt signal wire is configured to transmit the common interrupt signal to the controller.

Abstract: A chamber arrangement includes a chamber body, a substrate support, and a laser source. The substrate support is arranged within the chamber body and supported for rotation about a rotation axis relative to the chamber body. The laser source is arranged outside of the chamber body and optically coupled to the substrate support along a lasing axis. The lasing axis intersects the substrate support at a location radially outward from an outer periphery of a substrate seated on the substrate support. A semiconductor processing system and a material layer deposition method are also described.

Abstract: A lift pin actuator includes a castellated annulus, a first arm, a second arm, and a pin pad. The annulus arranged along a rotation axis and has a first merlon and a second merlon circumferentially separated by a crenel. The first arm is connected to the first merlon and extends outward from the annulus, the second arm is connected to the second merlon and extends outward from the annulus, and the second arm is circumferentially spaced from the first arm by a radial gap. The pin pad is connected to the annulus by the first arm and the second arm, is radially spaced from the annulus by the radial gap, and radially overlaps the crenel to nest a support member within the lift pin actuator during translation of the lift pin actuator along the rotation axis relative to the support member. Process kits, semiconductor processing systems, methods of making lift pin actuators and related material layer deposition methods are also described.

Abstract: Methods, systems, and assemblies suitable for gas-phase processes are disclosed. An exemplary assembly includes a susceptor ring and at least one injector tube. The injector tube can be disposed within the susceptor ring to provide a gas to a peripheral region of a substrate. Methods, systems, and assemblies can be used to obtain desired (e.g. composition and/or thickness) profiles of material on a substrate surface.

Abstract: Methods, systems, and assemblies suitable for gas-phase processes are disclosed. An exemplary assembly includes a susceptor ring and at least one injector tube. The injector tube can be disposed within the susceptor ring to provide a gas to a lower chamber area of a reactor. Methods, systems, and assemblies can be used to obtain desired etching and purging of the lower chamber area.

Abstract: An all-optical Diffractive Deep Neural Network (D2NN) architecture learns to implement various functions or tasks after deep learning-based design of the passive diffractive or reflective substrate layers that work collectively to perform the desired function or task. This architecture was successfully confirmed experimentally by creating 3D-printed D2NNs that learned to implement handwritten classifications and lens function at the terahertz spectrum. This all-optical deep learning framework can perform, at the speed of light, various complex functions and tasks that computer-based neural networks can implement, and will find applications in all-optical image analysis, feature detection and object classification, also enabling new camera designs and optical components that can learn to perform unique tasks using D2NNs. In alternative embodiments, the all-optical D2NN is used as a front-end in conjunction with a trained, digital neural network back-end.

Abstract: A substrate support includes a disc body with upper and lower surfaces spaced apart by a thickness. The upper surface has a circular concavity extending about a rotation axis, an annular ledge portion radially outward of the concavity extending circumferentially about the concavity, and an annular rim portion radially outward of the ledge portion extending circumferentially about the ledge portion. The concavity has a circular perforated portion and an annular unperforated portion. The perforated portion extends about the rotation axis and defines two or more perforations to issue an etchant into a cavity defined between the concavity and a backside of a substrate seated on the substrate support. The unperforated portion is radially outward of the perforated portion and extends circumferentially about the perforated portion to limit etching of the backside of the substrate by the etchant. Semiconductor processing systems and material layer deposition methods are also described.

Abstract: A susceptor for semiconductor substrate processing is disclosed herein. In some embodiments, the susceptor may comprise an inner susceptor portion and an outer susceptor portion. The susceptor portions may self-align via complementary features, such as tabs on the outer susceptor and recesses on the inner susceptor portion. The inner susceptor portion may contain several contact pads with which to support a wafer during semiconductor processing. In some embodiments, the contact pads are hemispherical to reduce contact area with the wafer, thereby reducing risk of backside damage. The inner susceptor portion may contain a cavity with which to receive a thermocouple. In some embodiments, the diameter of the cavity is greater than the diameter of the thermocouple such that the thermocouple does not contact the walls of the cavity during processing, thereby providing highly accurate temperature measurements.

Abstract: A susceptor for semiconductor substrate processing is disclosed herein. In some embodiments, the susceptor may comprise an inner susceptor portion and an outer susceptor portion. The susceptor portions may self-align via complementary features, such as tabs on the outer susceptor and recesses on the inner susceptor portion. The inner susceptor portion may contain several contact pads with which to support a wafer during semiconductor processing. In some embodiments, the contact pads are hemispherical to reduce contact area with the wafer, thereby reducing risk of backside damage. The inner susceptor portion may contain a cavity with which to receive a thermocouple. In some embodiments, the diameter of the cavity is greater than the diameter of the thermocouple such that the thermocouple does not contact the walls of the cavity during processing, thereby providing highly accurate temperature measurements.

Abstract: A touch panel and a touch display are disclosed. The touch panel mainly comprises a light transmissive substrate and two sensing units. The two sensing units are disposed oppositely through the light transmissive substrate. A mesh width of a metal mesh in the two sensing units is large, which can increase a variation of capacitance value and improve the touch sensitivity. In addition, an angle between metal lines with sensing function is configured in a random manner under a certain condition to reduce an area of nodes, thus a rounding effect at the nodes can be effectively reduced or eliminated. The metal meshes of the two sensing units disposed oppositely are staggered with a non-conductive node-free pattern to form a staggered pattern with irregular polygons, so that no interference fringes would be generated when the touch panel is used together with display panels of various mainstream sizes.

Abstract: The present invention provides a fog dissipation device and a cooling tower, and relates to the technical field of cooling towers. The fog dissipation device comprises: a first flow path and a second flow path which are stacked to exchange heat between a first air flow and a second air flow flowing from bottom to top; a first outflow port through which the first air flow flowing out of the first flow path is discharged to the upper side of the fog dissipation device; and, a second outflow port through which the second air flow flowing out of the second flow path is discharged to the upper side of the fog dissipation device, wherein the first outflow port and the second outflow port are alternately stacked. The fog dissipation device can play a role in water-saving fog dissipation. The cooling tower comprises the fog dissipation device described above.

Abstract: A charging gun is applicable to a charger station. The charging gun includes a charging gun body and a charge state display apparatus. The charge state display apparatus includes a charge state sensor, a display light module, and a controller. The charge state sensor is configured to sense a charge state of the charger station. The display light module is arranged on the charging gun body. The display light module includes a first light-emitting element, a second light-emitting element, and a third light-emitting element. The controller is electrically connected to the charge state sensor and the display light module. The controller is configured to control the first light-emitting element, the second light-emitting element, or the third light-emitting element to emit light according to the charge state.

Abstract: An all-optical Diffractive Deep Neural Network (D2NN) architecture learns to implement various functions or tasks after deep learning-based design of the passive diffractive or reflective substrate layers that work collectively to perform the desired function or task. This architecture was successfully confirmed experimentally by creating 3D-printed D2NNs that learned to implement handwritten classifications and lens function at the terahertz spectrum. This all-optical deep learning framework can perform, at the speed of light, various complex functions and tasks that computer-based neural networks can implement, and will find applications in all-optical image analysis, feature detection and object classification, also enabling new camera designs and optical components that can learn to perform unique tasks using D2NNs. In alternative embodiments, the all-optical D2NN is used as a front-end in conjunction with a trained, digital neural network back-end.

Abstract: A reactor system may comprise a first reaction chamber and a second reaction chamber. The first and second reaction chambers may each comprise a reaction space enclosed therein, a susceptor disposed within the reaction space, and a fluid distribution system in fluid communication with the reaction space. The susceptor in each reaction chamber may be configured to support a substrate. The reactor system may further comprise a first reactant source, wherein the first reaction chamber and the second reaction chamber are fluidly coupled to the first reactant source at least partially by a first reactant shared line. The reactor system may be configured to deliver a first reactant from the first reactant source to the first reaction chamber and a second reaction chamber through the first reactant shared line.

Abstract: A substrate support includes a disc body with an upper surface and an opposite lower surface arranged along a rotation axis. The upper surface has a circular concave portion extending about the rotation axis, an annular ledge portion extending circumferentially about the concave portion, and an annular rim portion extending circumferentially about the ledge portion connecting to the concave portion of the disc body by the ledge portion of the disc body. The ledge portion slopes downward radially outward from the rotation axis to seat a substrate on the disc body such that a beveled edge of the substrate is cantilevered above the ledge portion of the upper surface of the disc body. Substrate support assemblies, semiconductor processing systems, and film deposition methods are also described.