Abstract: The present invention provides a display module and a fixing method therefor, and a display apparatus. The display module is provided with a light-shielding structure including a light-shielding part and a supporting part that are integrally formed, wherein the light-shielding part is arranged around the inner wall of a through hole; the supporting part is fixed to a side of a display panel away from a cover plate; and an orthographic projection of the light-shielding part on the cover plate and an orthographic projection of a light-shielding layer on the cover plate at least partially overlap, such that a transition area is surrounded by the light-shielding layer and the light-shielding part in a through hole area.

Abstract: There is provided a display device including a cover plate and a display panel; the cover plate includes a middle plane part, a first edge curved surface part, a second edge covered surface part and a corner curved surface part; the display panel includes a middle part, an edge part and a corner part; the middle part is arranged corresponding to the middle plane part; the edge part includes a first edge part and a second edge part; the first edge part and the first edge curved surface part are arranged correspondingly, and the second edge part and the second edge curved surface part are arranged correspondingly; the corner part and the corner curved surface part are correspondingly arranged; the middle part is in a display area; at least a portion of the edge part and the corner part adjacent to the middle part is in the display area.

Abstract: The disclosure relates to the technical field of building materials, and in particular, to lightweight aggregate ultra-high performance concrete (UHPC) and a preparation method thereof. The lightweight aggregate UHPC provided in the disclosure is prepared from the following components in parts by weight: cement 220-260 parts; silica fume 100-120 parts; expanded perlite powder 120-160 parts; expanded perlite 230-260 parts; polycarboxylate superplasticizer 15-20 parts; steel fiber 76-93 parts; and water 140-160 parts, where a maximum particle size of the expanded perlite powder is 0.075 mm; and a particle size range of the expanded perlite is 0.075-0.6 mm. The lightweight UHPC prepared according to the design of the disclosure has excellent density performance, and can satisfy requirements of concrete components, etc.

Abstract: Various embodiments may provide a memory cell including a magnetic pinned layer with a substantially fixed magnetization direction, a crystalline spacer layer in contact with the magnetic pinned layer, and a magnetic storage layer. The magnetic storage layer may include an amorphous interface sub-layer in contact with the crystalline spacer layer, the amorphous interface sub-layer including a first alloy of iron (Fe) and at least one element. The amorphous storage layer may also include an amorphous enhancement sub-layer in contact with the amorphous interface sub-layer, the amorphous enhancement sub-layer including a second alloy of iron (Fe) and at least one element. The memory cell may additionally include a cap layer in contact with the amorphous enhancement sub-layer. A concentration of the at least one further element comprised in the first alloy and a concentration of the at least one further element comprised in the second alloy may be different.

Abstract: A memory device includes a metal oxide material disposed between and in electrical contact with first and second conductive electrodes, and an electrical current source configured to apply one or more electrical current pulses through the metal oxide material. For each of the one or more electrical current pulses, an amplitude of the electrical current increases over time during the electrical current pulse to form a conductive filament in metal oxide material.

Abstract: A memory device includes a metal oxide material disposed between and in electrical contact with first and second conductive electrodes, and an electrical current source configured to apply one or more electrical current pulses through the metal oxide material. For each of the one or more electrical current pulses, an amplitude of the electrical current increases over time during the electrical current pulse to form a conductive filament in metal oxide material.

Abstract: The present application provides a flash memory device. The flash memory device includes a semiconductor substrate; and a plurality of tunnel oxide layers formed on a surface of the semiconductor substrate. The flash memory device also includes a floating gate having a first portion with a width smaller than a width of the tunnel oxide layer and a second portion with a width greater than the width of the first portion formed on the first portion formed on each of the floating silicon oxide layers. Further, the flash memory device includes a plurality of shallow trench isolation structures formed in the surface of the semiconductor substrate between adjacent floating gates and the tunnel oxide layers; and liner oxide layers formed on side surfaces of the first portion of the floating gates.

Abstract: A UNCD nanowire comprises a first end electrically coupled to a first contact pad which is disposed on a substrate. A second end is electrically coupled to a second contact pad also disposed on the substrate. The UNCD nanowire is doped with a dopant and disposed over the substrate. The UNCD nanowire is movable between a first configuration in which no force is exerted on the UNCD nanowire and a second configuration in which the UNCD nanowire bends about the first end and the second end in response to a force. The UNCD nanowire has a first resistance in the first configuration and a second resistance in the second configuration which is different from the first resistance. The UNCD nanowire is structured to have a gauge factor of at least about 70, for example, in the range of about 70 to about 1,800.

Abstract: A semiconductor device production method includes a first step of forming a planar silicon layer on a silicon substrate and forming first and second pillar-shaped silicon layers on the planar silicon layer; a second step of forming a gate insulating film around the first and second pillar-shaped silicon layers, forming a metal film and a polysilicon film around the gate insulating film, controlling a thickness of the polysilicon film to be smaller than a half of a distance between the first and second pillar-shaped silicon layers, depositing a resist, exposing the polysilicon film on side walls of upper portions of the first and second pillar-shaped semiconductor layers, etching-away the exposed polysilicon film, stripping the third resist, and etching-away the metal film; and a third step of forming a resist for forming a gate line and performing anisotropic etching to form a gate line and first and second gate electrodes.

Abstract: A method for forming a semiconductor device includes forming first and second hard mask layers overlying a semiconductor substrate and forming trenches through the second hard mask, the first hard mask, and into the substrate. A dielectric material is formed in the trenches to form shallow trench isolation regions, removing the second hard mask layer, and a floating gate material is formed overlying the first hard mask and the trenches. The method further includes repeating at least twice a process of forming a buffer layer over the floating gate material and using a polishing process to remove a portion of the buffer layer and a top portion of the floating gate material. Next, a dry etch process to remove a portion of the floating gate material above the shallow trench isolation regions and the remaining portions of the buffer layer to form floating gate structures.

Abstract: A semiconductor device production method includes a first step of forming a planar silicon layer on a silicon substrate and forming first and second pillar-shaped silicon layers on the planar silicon layer; a second step of forming a gate insulating film around the first and second pillar-shaped silicon layers, forming a metal film and a polysilicon film around the gate insulating film, controlling a thickness of the polysilicon film to be smaller than a half of a distance between the first and second pillar-shaped silicon layers, depositing a resist, exposing the polysilicon film on side walls of upper portions of the first and second pillar-shaped semiconductor layers, etching-away the exposed polysilicon film, stripping the third resist, and etching-away the metal film; and a third step of forming a resist for forming a gate line and performing anisotropic etching to form a gate line and first and second gate electrodes.

Abstract: A method for manufacturing a semiconductor device may include forming a cavity between two insulating portions that are positioned on a semiconductor substrate. The cavity may include a first cavity portion and a second cavity portion. The second cavity portion may be positioned between the semiconductor substrate and the first cavity portion. A width of the second cavity portion may be less than a width of the first cavity portion. The method may further include providing a set of gate metal material through the first cavity portion into the second cavity portion for forming a metal gate member of the semiconductor device.

Abstract: Various embodiments provide semiconductor structures and methods for forming the same. In an exemplary method, a semiconductor substrate is provided. A first stop layer, a first sacrificial layer, a second stop layer, and a second sacrificial layer are formed sequentially on the semiconductor substrate. The second sacrificial layer, the second stop layer, the first sacrificial layer, the first stop layer, and the semiconductor substrate are etched to form a groove, the groove then being filled to form an isolation structure. The second sacrificial layer is removed to expose sidewalls and a top of an exposed portion of the isolation structure. The second stop layer is removed, and the exposed portion of the isolation structure is etched to reduce a width of the top of the exposed portion of the isolation structure. The first sacrificial layer is removed. A floating gate is formed on the first stop layer.

Abstract: A UNCD nanowire comprises a first end electrically coupled to a first contact pad which is disposed on a substrate. A second end is electrically coupled to a second contact pad also disposed on the substrate. The UNCD nanowire is doped with a dopant and disposed over the substrate. The UNCD nanowire is movable between a first configuration in which no force is exerted on the UNCD nanowire and a second configuration in which the UNCD nanowire bends about the first end and the second end in response to a force. The UNCD nanowire has a first resistance in the first configuration and a second resistance in the second configuration which is different from the first resistance. The UNCD nanowire is structured to have a gauge factor of at least about 70, for example, in the range of about 70 to about 1,800.

Abstract: A semiconductor device production method includes a first step of forming a planar silicon layer on a silicon substrate and forming first and second pillar-shaped silicon layers on the planar silicon layer; a second step of forming a gate insulating film around the first and second pillar-shaped silicon layers, forming a metal film and a polysilicon film around the gate insulating film, controlling a thickness of the polysilicon film to be smaller than a half of a distance between the first and second pillar-shaped silicon layers, depositing a resist, exposing the polysilicon film on side walls of upper portions of the first and second pillar-shaped semiconductor layers, etching-away the exposed polysilicon film, stripping the third resist, and etching-away the metal film; and a third step of forming a resist for forming a gate line and performing anisotropic etching to form a gate line and first and second gate electrodes.

Abstract: Various embodiments provide transistors and methods for forming the same. In an exemplary method, a substrate is provided, having a dummy gate structure including a dummy gate dielectric layer on the substrate and a dummy gate layer on the dummy gate dielectric layer. A dielectric layer is formed on the substrate and on sidewall surfaces of the dummy gate structure. A top surface of the dielectric layer is leveled with a top surface of the dummy gate structure. A barrier layer is formed on the dielectric layer for protecting the dielectric layer. The dummy gate layer and the dummy gate dielectric layer are removed, to form an opening in the dielectric layer without reducing a thickness of the dielectric layer. A gate dielectric layer is formed on sidewall surfaces and a bottom surface of the opening. A gate layer is formed on the gate dielectric layer to fill the opening.

Abstract: A UNCD nanowire comprises a first end electrically coupled to a first contact pad which is disposed on a substrate. A second end is electrically coupled to a second contact pad also disposed on the substrate. The UNCD nanowire is doped with a dopant and disposed over the substrate. The UNCD nanowire is movable between a first configuration in which no force is exerted on the UNCD nanowire and a second configuration in which the UNCD nanowire bends about the first end and the second end in response to a force. The UNCD nanowire has a first resistance in the first configuration and a second resistance in the second configuration which is different from the first resistance. The UNCD nanowire is structured to have a gauge factor of at least about 70, for example, in the range of about 70 to about 1,800.

Abstract: A method is provided for fabricating a flash memory device. The method includes providing a semiconductor substrate; and forming a first polysilicon layer. The method also includes forming a hard mask layer; and forming a plurality of first openings exposing the first polysilicon layer in the hard mask layer and the first polysilicon layer. Further, the method includes forming a plurality of grooves by etching the semiconductor substrate along the first openings; and forming liner oxide layers by oxidizing the first polysilicon layer. Further, the method also includes forming shallow trench isolation structures by filling the first openings; and forming second openings by removing the hard mask layer and the non-oxidized first polysilicon layer. Further, the method also includes forming a tunnel oxide layer on a bottom of the second opening; and forming a floating gate on each of the tunnel oxide layers.

Abstract: A method for manufacturing a semiconductor device may include forming a cavity between two insulating portions that are positioned on a semiconductor substrate. The cavity may include a first cavity portion and a second cavity portion. The second cavity portion may be positioned between the semiconductor substrate and the first cavity portion. A width of the second cavity portion may be less than a width of the first cavity portion. The method may further include providing a set of gate metal material through the first cavity portion into the second cavity portion for forming a metal gate member of the semiconductor device.

Abstract: A UNCD nanowire comprises a first end electrically coupled to a first contact pad which is disposed on a substrate. A second end is electrically coupled to a second contact pad also disposed on the substrate. The UNCD nanowire is doped with a dopant and disposed over the substrate. The UNCD nanowire is movable between a first configuration in which no force is exerted on the UNCD nanowire and a second configuration in which the UNCD nanowire bends about the first end and the second end in response to a force. The UNCD nanowire has a first resistance in the first configuration and a second resistance in the second configuration which is different from the first resistance. The UNCD nanowire is structured to have a gauge factor of at least about 70, for example, in the range of about 70 to about 1,800.