Abstract: An optical member driving mechanism is provided. The optical member driving mechanism includes a movable portion, a fixed portion, and a driving assembly. The movable portion is configured to connect an optical member, and is movable relative to the fixed portion. The driving assembly is configured to drive the movable portion to move relative to the fixed portion.

Abstract: The present disclosure provides a method and an apparatus for creating an occupancy grid map, as well as a processing apparatus. The method includes: creating a current occupancy grid map based on a location of the vehicle and a previous occupancy grid map; and determining a current probability that each grid in the current occupancy grid map belongs to each of occupancy categories based on last environment perception information received from the sensors and updating an occupancy category to which each grid in the current occupancy grid map belongs based on the current probability that the grid belongs to each of the occupancy categories, in accordance with an asynchronous updating policy.

Abstract: A contamination detection and auto-cleaning equipment and a method using the same are provided. The contamination detection and auto-cleaning equipment includes a contamination detection device and an automatic cleaning device. The contamination detection device is configured for detecting a cleanliness of a sample container. The automatic cleaning device is configured for cleaning the sample container. The contamination detection device includes a light emitter, a detection-light receiver and a controller. The light emitter is configured for emitting an emission light, wherein the emission light becomes a detection light after traveling through the sample container. The detection-light receiver is configured for receiving the detection light to obtain a detection-light intensity. The controller is coupled to the light emitter and the detection-light receiver, and obtain the cleanliness of the sample container according to a variation of the detection-light intensity.

Abstract: The present disclosure provides a method and an apparatus for creating an occupancy grid map, as well as a processing apparatus. The method includes: creating a current occupancy grid map based on a location of the vehicle and a previous occupancy grid map; and determining a current probability that each grid in the current occupancy grid map belongs to each of occupancy categories based on last environment perception information received from the sensors and updating an occupancy category to which each grid in the current occupancy grid map belongs based on the current probability that the grid belongs to each of the occupancy categories, in accordance with an asynchronous updating policy.

Abstract: A water quality monitoring device and a monitoring method thereof are provided. The water quality monitoring device includes a water tank, a first and a second optical detection devices and a control circuit. The water tank has an accommodating space to carry a liquid. The first optical detection device provides a first light to detect and obtain a first reference light intensity, a first scattered light intensity, and a first penetrating light intensity. The second optical detection device provides a second light to detect and obtain a second reference light intensity, a second scattered light intensity, and a second penetrating light intensity. The control circuit calculates a water quality detection value of the liquid based on the first reference light intensity, the first scattered light intensity, the first penetrating light intensity, the second reference light intensity, the second scattered light intensity, and the second penetrating light intensity.

Abstract: The present disclosure provides a method and an apparatus for creating an occupancy grid map, as well as a processing apparatus. The method includes: creating a current occupancy grid map based on a location of the vehicle and a previous occupancy grid map; and determining a current probability that each grid in the current occupancy grid map belongs to each of occupancy categories based on last environment perception information received from the sensors and updating an occupancy category to which each grid in the current occupancy grid map belongs based on the current probability that the grid belongs to each of the occupancy categories, in accordance with an asynchronous updating policy.

Abstract: The present disclosure provides a method and an apparatus for creating an occupancy grid map, as well as a processing apparatus. The method includes: creating a current occupancy grid map based on a location of the vehicle and a previous occupancy grid map; and determining a current probability that each grid in the current occupancy grid map belongs to each of occupancy categories based on last environment perception information received from the sensors and updating an occupancy category to which each grid in the current occupancy grid map belongs based on the current probability that the grid belongs to each of the occupancy categories, in accordance with an asynchronous updating policy.

Abstract: Structures for interconnects and methods of forming interconnects. An interconnect opening in a dielectric layer includes a first portion and a second portion arranged over the first portion. A first conductor layer composed of a first metal is arranged inside the first portion of the interconnect opening. A second conductor layer composed of a second metal is arranged inside the second portion of the interconnect opening. The first metal is ruthenium.

Abstract: Structures for interconnects and methods of forming interconnects. An interconnect opening in a dielectric layer includes a first portion and a second portion arranged over the first portion. A first conductor layer composed of a first metal is arranged inside the first portion of the interconnect opening. A second conductor layer composed of a second metal is arranged inside the second portion of the interconnect opening. The first metal is ruthenium.

Abstract: The present disclosure relates to semiconductor structures and, more particularly, to metal interconnect structures for super (skip) via integration and methods of manufacture. The structure includes: a first wiring layer with one or more wiring structures; a second wiring layer including an interconnect and wiring structure; and at least one upper wiring layer with one or more via interconnect and wiring structures located above the second wiring layer. The one or more via interconnect and wiring structures partially including a first metal material and remaining portions with a conductive material over the first metal material. A skip via passes through the second wiring layer and extends to the one or more wiring structures of the first wiring layer. The skip via partially includes the metal material and remaining portions of the skip via includes the conductive material over the first metal material.

Abstract: A process for metalizing a through silicon via feature in a semiconductor integrated circuit device, the process including, during the filling cycle, reversing the polarity of circuit for an interval to generate an anodic potential at said metalizing substrate and desorb leveler from the copper surface within the via, followed by resuming copper deposition by re-establishing the surface of the copper within the via as the cathode in the circuit, thereby yielding a copper filled via feature.

Abstract: An egg chalaza hydrolysate, a method for preparing the same and a usage of the same are revealed. An egg chalaza is hydrolyzed by an enzyme to get a hydrolysate solution. The hydrolysate solution is filtered and lyophilized to get an egg chalaza hydrolysate. The egg chalaza hydrolysate includes leucine, arginine, phenylalanine, valine, and lysine. The egg chalaza hydrolysate can reduce fat accumulation and oxidative stress in livers. Thus the egg chalaza hydrolysate is applied to prepare a composition for liver protection.

Abstract: Methods of self-aligned multiple patterning. A mandrel line is formed over a hardmask layer, and forming a block mask is formed over a first portion of the mandrel line that is linearly arranged between respective second portions of the mandrel line. After forming the first block mask, the second portions of the mandrel line are removed with an etching process to cut the mandrel line and expose respective portions of the hardmask layer. A second portion of the mandrel line is covered by the block mask during the etching process to define a mandrel cut in the mandrel line.

Abstract: Methods of forming interconnects. An interconnect opening is formed in a dielectric layer. A first conductor layer composed of a first metal is formed in the interconnect opening. A second conductor layer is formed inside the interconnect opening by displacing the first metal of the first conductor layer and replacing the first metal with a second metal different from the first metal.

Abstract: An approach for forming a semiconductor device is provided. In general, the device is formed by providing a metal layer, a cap layer over the metal layer, and an ultra low k layer over the cap layer. A via is then formed through the ultra low k layer and the cap layer. Once the via is formed, a barrier layer (e.g., cobalt (Co), tantalum (Ta), cobalt-tungsten-phosphide (CoWP), or other metal capable of acting as a copper (CU) diffusion barrier) is selectively applied to a bottom surface of the via. A liner layer (e.g., manganese (MN) or aluminum (AL)) is then applied to a set of sidewalls of the via. The via may then be filled with a subsequent metal layer (with or without a seed layer), and the device may the then be further processed (e.g., annealed).

Abstract: An electrolytic plating method and composition for electrolytically plating Cu onto a semiconductor integrated circuit substrate having submicron-sized interconnect features. The composition comprises a source of Cu ions and a suppressor compound comprising polyether groups. The method involves superfilling by rapid bottom-up deposition at a superfill speed by which Cu deposition in a vertical direction from the bottoms of the features to the top openings of the features is substantially greater than Cu deposition on the side walls.

Abstract: An approach for forming a semiconductor device is provided. In general, the device is formed by providing a metal layer, a cap layer over the metal layer, and an ultra low k layer over the cap layer. A via is then formed through the ultra low k layer and the cap layer. Once the via is formed, a barrier layer (e.g., cobalt (Co), tantalum (Ta), cobalt-tungsten-phosphide (CoWP), or other metal capable of acting as a copper (CU) diffusion barrier) is selectively applied to a bottom surface of the via. A liner layer (e.g., manganese (MN) or aluminum (AL)) is then applied to a set of sidewalls of the via. The via may then be filled with a subsequent metal layer (with or without a seed layer), and the device may the then be further processed (e.g., annealed).