Abstract: A method and composition for electroplating Cu onto a substrate in the manufacture of a microelectronic device involving and electrolytic solution containing a source of Cu ions and a quaternized pyridinium salt compound for leveling.

Abstract: A process for metalizing a through silicon via feature in a semiconductor integrated circuit device, the process including, during the filling cycle, reversing the polarity of circuit for an interval to generate an anodic potential at said metalizing substrate and desorb leveler from the copper surface within the via, followed by resuming copper deposition by re-establishing the surface of the copper within the via as the cathode in the circuit, thereby yielding a copper filled via feature.

Abstract: A testing model for heterogeneous client environments is enabled. A test of a computer system state transition may be specified. The test specification may include elements corresponding to test actions that cause the computer system state transition and elements corresponding to test conditions that are evaluated to generate the test results. A collection of pre-assembled executable components suitable for implementing specified tests at a wide variety of clients may be maintained, and particular test specifications may be mapped to a corresponding and optimal implementation subset of the collection. Test results may be determined based on one or more outputs of the implementation subset of executable components. A vendor and version independent browser driver may include code capable of identifying an operational set of browser capabilities among the superset of considered browser capabilities independent of vendor or version identification by a browser under test.

Abstract: A method that involves forming a high-k gate insulation layer, a work-function adjusting metal layer and a metal protection layer in first and second replacement gate cavities, wherein the metal protection layer is formed so as to pinch-off the first gate cavity while leaving the second gate cavity partially un-filled, forming a first bulk conductive metal layer in the un-filled portion of the second gate cavity, removing substantially all of the metal protection layer in the first gate cavity while leaving a portion of the metal protection layer in the second gate cavity, forming a second conductive metal layer within the first and second replacement gate cavities, recessing the conductive metal layers so as to define first and second gate-cap cavities in the first and second replacement gate cavities, respectively, and forming gate cap layers within the first and second gate-cap cavities.

Abstract: A transport vehicle includes a driving unit, a wheel and a charging system. The charging system includes an electricity-generating tire and a converting unit. The electricity-generating tire has a tire body mounted on the wheel, and a piezoelectricity generating unit disposed at the tire body and configured to output electricity when the piezoelectricity generating unit is subjected to mechanical forces attributed to movement of the tire body on a ground surface. The converting unit operates to convert the electricity outputted by the piezoelectricity generating unit into a form of energy for storage in an energy storing unit.

Abstract: A method that involves forming a high-k gate insulation layer, a work-function adjusting metal layer and a metal protection layer in first and second replacement gate cavities, wherein the metal protection layer is formed so as to pinch-off the first gate cavity while leaving the second gate cavity partially un-filled, forming a first bulk conductive metal layer in the un-filled portion of the second gate cavity, removing substantially all of the metal protection layer in the first gate cavity while leaving a portion of the metal protection layer in the second gate cavity, forming a second conductive metal layer within the first and second replacement gate cavities, recessing the conductive metal layers so as to define first and second gate-cap cavities in the first and second replacement gate cavities, respectively, and forming gate cap layers within the first and second gate-cap cavities.

Abstract: An image-sensing apparatus is provided. The image-sensing apparatus includes: an optical filter array including a two-band passing filter and an infrared filter; an RGB pixel array placed below the two-band passing filter; and a TOF pixel array adjacent to the RGB pixel array and placed below the two-band passing filter and the infrared filter, wherein a combination of the two-band passing filter and the infrared passing filter permits only the incident light in the infrared region to pass to the ToF pixel array.

Abstract: A testing model for heterogeneous client environments is enabled. A test of a computer system state transition may be specified. The test specification may include elements corresponding to test actions that cause the computer system state transition and elements corresponding to test conditions that are evaluated to generate the test results. A collection of pre-assembled executable components suitable for implementing specified tests at a wide variety of clients may be maintained, and particular test specifications may be mapped to a corresponding and optimal implementation subset of the collection. Test results may be determined based on one or more outputs of the implementation subset of executable components. A vendor and version independent browser driver may include code capable of identifying an operational set of browser capabilities among the superset of considered browser capabilities independent of vendor or version identification by a browser under test.

Abstract: A testing model for heterogeneous client environments is enabled. A test of a computer system state transition may be specified. The test specification may include elements corresponding to test actions that cause the computer system state transition and elements corresponding to test conditions that are evaluated to generate the test results. A collection of pre-assembled executable components suitable for implementing specified tests at a wide variety of clients may be maintained, and particular test specifications may be mapped to a corresponding and optimal implementation subset of the collection. Test results may be determined based on one or more outputs of the implementation subset of executable components. A vendor and version independent browser driver may include code capable of identifying an operational set of browser capabilities among the superset of considered browser capabilities independent of vendor or version identification by a browser under test.

Abstract: Integrated circuits with magnetic tunnel junction (MTJ) structures and methods for fabricating integrated circuits with MTJ structures are provided. An exemplary method for fabricating an integrated circuit includes forming a first conductive line in electrical connection with an underlying semiconductor device. The method exposes a surface of the first conductive line. Further, the method selectively deposits a conductive material on the surface of the first conductive line to form an electrode contact. The method includes forming a MTJ structure over the electrode contact.

Abstract: Integrated circuits with improved contact structures are provided. In an exemplary embodiment, an integrated circuit includes a semiconductor substrate disposed with a device therein and/or thereon. The integrated circuit includes a contact structure in electrical contact with the device. The contact structure includes a plug metal and a barrier layer, and the barrier layer is selected from fluorine-free tungsten (FFW), tungsten carbide, and tungsten nitride. The integrated circuit further includes a dielectric material overlying the semiconductor substrate. Also, the integrated circuit includes an interconnect formed within the dielectric material and in electrical contact with the contact structure.

Abstract: A method for electroplating a copper deposit onto a semiconductor integrated circuit device substrate having submicron-sized features, and a concentrate for forming a corresponding electroplating bath. A substrate is immersed into an electroplating bath formed from the concentrate including ionic copper and an effective amount of a defect reducing agent, and electroplating the copper deposit from the bath onto the substrate to fill the submicron-sized reliefs. The occurrence of protrusion defects from superfilling, surface roughness, and voiding due to uneven growth are reduced, and macro-scale planarity across the wafer is improved.

Abstract: Integrated circuits with magnetic tunnel junction (MTJ) structures and methods for fabricating integrated circuits with MTJ structures are provided. An exemplary method for fabricating an integrated circuit includes forming a first conductive line in electrical connection with an underlying semiconductor device. The method exposes a surface of the first conductive line. Further, the method selectively deposits a conductive material on the surface of the first conductive line to form an electrode contact. The method includes forming a MTJ structure over the electrode contact.

Abstract: Integrated circuits with improved contact structures are provided. In an exemplary embodiment, an integrated circuit includes a semiconductor substrate disposed with a device therein and/or thereon. The integrated circuit includes a contact structure in electrical contact with the device. The contact structure includes a plug metal and a barrier layer, and the barrier layer is selected from fluorine-free tungsten (FFW), tungsten carbide, and tungsten nitride. The integrated circuit further includes a dielectric material overlying the semiconductor substrate. Also, the integrated circuit includes an interconnect formed within the dielectric material and in electrical contact with the contact structure.

Abstract: A magnetic force generating device is provided for application to a first object that is movable relative to a second object providing a first magnetic force, and includes a coil disposed on the first object, a sensing module disposed on the first object adjacent to the coil for sensing a distance between the first and second objects, and a processor. When the sensed distance is shorter than a threshold value, the processor enables provision to the coil of a driving current having a magnitude negatively correlated to the sensed distance, so that the coil generates a second magnetic force, which is repulsive to the first magnetic force, in response to the driving current.

Abstract: Methods for fabricating integrated circuits are provided. In an exemplary embodiment, a method for fabricating integrated circuits includes providing a semiconductor substrate disposed with a device therein and/or thereon. A contact structure including a barrier layer and a plug metal overlying the barrier layer is formed in electrical contact with the device. A hardmask is formed overlying the contact structure. The method includes performing an etch to form a via opening through the hardmask and to expose the barrier layer and the plug metal. Further, the method removes a remaining portion of the hardmask with a wet etchant, while the contact structure is configured to inhibit the wet etchant from etching the barrier layer. In the method, the via opening is filled with a conductive material to form an interconnect to the contact structure.

Abstract: A transport vehicle includes a driving unit, a wheel and a charging system. The charging system includes an electricity-generating tire and a converting unit. The electricity-generating tire has a tire body mounted on the wheel, and a piezoelectricity generating unit disposed at the tire body and configured to output electricity when the piezoelectricity generating unit is subjected to mechanical forces attributed to movement of the tire body on a ground surface. The converting unit operates to convert the electricity outputted by the piezoelectricity generating unit into a form of energy for storage in an energy storing unit.

Abstract: A pneumatic driving module is for mounting on and driving a vehicle. The vehicle includes at least one wheel that includes a rim. The pneumatic driving module includes a storage tank, an air delivery unit and an air-driving mechanism. The storage tank is for storing compressed air therein. The air delivery unit includes a tube fluidly communicating with the storage tank for discharging the compressed air stored in the storage tank. The air-driving mechanism fluidly communicates with the tube, and is configured to be mounted directly to the wheel for providing dynamic energy associated with the compressed air to the rim to drive rotation of the wheel.

Abstract: An approach for forming a semiconductor device is provided. In general, the device is formed by providing a metal layer, a cap layer over the metal layer, and an ultra low k layer over the cap layer. A via is then formed through the ultra low k layer and the cap layer. Once the via is formed, a barrier layer (e.g., cobalt (Co), tantalum (Ta), cobalt-tungsten-phosphide (CoWP), or other metal capable of acting as a copper (CU) diffusion barrier) is selectively applied to a bottom surface of the via. A liner layer (e.g., manganese (MN) or aluminum (AL)) is then applied to a set of sidewalls of the via. The via may then be filled with a subsequent metal layer (with or without a seed layer), and the device may the then be further processed (e.g., annealed).

Abstract: Integrated circuits and methods for fabricating integrated circuits are provided. In an exemplary embodiment, a method for fabricating integrated circuits includes providing a semiconductor substrate disposed with a device therein and/or thereon. A contact structure including a barrier layer and a plug metal overlying the barrier layer is formed in electrical contact with the device. A hardmask is formed overlying the contact structure. The method includes performing an etch to form a via opening through the hardmask and to expose the barrier layer and the plug metal. Further, the method removes a remaining portion of the hardmask with a wet etchant, while the contact structure is configured to inhibit the wet etchant from etching the barrier layer. In the method, the via opening is filled with a conductive material to form an interconnect to the contact structure.