Abstract: The present disclosure provides a method for semiconductor manufacturing in accordance with some embodiments. The method includes providing a substrate and a patterning layer over the substrate and forming a plurality of openings in the patterning layer. The substrate includes a plurality of features to receive a treatment process. The openings partially overlap with the features from a top view while a portion of the features remains covered by the patterning layer. Each of the openings is free of concave corners. The method further includes performing an opening expanding process to enlarge each of the openings and performing a treatment process to the features through the openings. After the opening expanding process, the openings fully overlap with the features from the top view.

Abstract: A method for forming a semiconductor device is provided. In some embodiments, the method includes forming a target layer over a semiconductor substrate, forming a carbon-rich hard masking layer over the target layer, patterning features in the carbon-rich hard masking layer using an etching process, performing a directional ion beam trimming process on the features patterned in the carbon-rich hard masking layer, and patterning the target layer using the carbon-rich hard masking layer as a mask.

Abstract: A photo mask for an extreme ultraviolet (EUV) lithography includes a mask alignment mark for aligning the photo mask to an EUV lithography tool, and sub-resolution assist patterns disposed around the mask alignment mark. A dimension of the sub-resolution assist patterns is in a range from 10 nm to 50 nm.

Abstract: In some aspects of the present disclosure, a memory device includes a first memory array including: a plurality of memory strings spaced from each other along a first lateral direction and a second lateral direction, each of the plurality of memory strings including a plurality of memory cells arranged along a vertical direction; and a plurality of first conductive structures extending along the vertical direction; wherein each of the plurality of first conductive structures includes a first portion and a second portion; wherein the first portion extends across the plurality of memory cells of a corresponding pair of the plurality of memory strings along the vertical direction, and the second portion is disposed over the first portion along the vertical direction; and wherein the second portion extends farther than the first portion along at least one of the first or second lateral direction.

Abstract: The present invention relates to a meat substitute hamburger comprising: 1 to 50 wt % of a plant protein; 0.01 to 5 wt % of a high acyl gellan gum; 5 to 20 wt % of a plant oil and/or fat; 0.001 to 5 wt % of a colorant; 0.01 to 5 wt % of a juiciness enhancer; 0.001 to 5 wt % of a nutrient; 0 to 5 wt % of a binder; and water up to 100 wt %.

Abstract: A wearable stimulation device includes a wearable member, a stimulation unit, and a driver. The stimulation unit is secured to the wearable member. The stimulation unit includes an immovable end, a stimulation end, and a power element. The power element is connected between the immovable end and the stimulation end for driving the stimulation end to reciprocate relative to the immovable end. The driver is in signal connection with the power element. The driver is configured to output a vibration signal to the power element for the stimulation end to have a stroke of between 8.8 mm and 10.8 mm, a thrust of between 5.6 N and 7.6 N and a reciprocating frequency of between 180 Hz and 220 Hz, thereby stimulating the deep muscles of the abdomen or waist of a human body without affecting the superficial muscles.

Abstract: A system and method for depositing a photoresist and utilizing the photoresist are provided. In an embodiment a deposition chamber is utilized along with a first precursor material comprising carbon-carbon double bonds and a second precursor material comprising repeating units to deposit the photoresist onto a substrate. The first precursor material is turned into a plasma in a remote plasma chamber prior to being introduced into the deposition chamber. The resulting photoresist comprises a carbon backbone with carbon-carbon double bonds.

Abstract: A chip device is provided. The chip device includes a substrate, at least one chip, a sealing component, a heat-conducting medium, a barrier, and a heat dissipation device. The at least one chip is disposed over a first surface of the substrate and has a heat transfer surface. The sealing component covers the at least one chip and has a heat transfer area thermal contacting the heat transfer surface of the at least one chip. The heat-conducting medium is disposed over the heat transfer area of the sealing component. The barrier is disposed around and blocks the heat-conducting medium. The heat dissipation device is disposed over the heat transfer area of the sealing component and on the heat-conducting medium. The chip device can block the heat-conducting medium through the barrier to prevent the heat-conducting medium from overflowing or losing between the sealing component and the heat dissipation device.

Abstract: An audio switching device includes a housing, a first user interface, and a controller within the housing and in electronic communication with the first user interface. The controller is configured to connect a first audio source to the audio switching device, connect a first listening device to the audio switching device, such that an output from the first audio source is received at the first listening device, receive a first input from the first user interface, disconnect the first listening device in response to receiving the first input, and connect a second audio listening device to the audio switching device, such that an output from the first audio source is received at the second listening device.

Abstract: A hemming path planning method and a hemming system are provided. The hemming path planning method includes the following steps. An initial contour data of a target is scanned to obtain. A first segment of the hemming path is planned according to the initial contour data. The first segment corresponds to a first bending angle. A second segment of the hemming path is planned according to the initial contour data and an expected springback amount related to the first bending angle. The second segment corresponds to a second bending angle. The first segment and the second segment are combined to obtain a continuous hemming path.

Abstract: A method includes providing a substrate having a surface such that a first hard mask layer is formed over the surface and a second hard mask layer is formed over the first hard mask layer, forming a first pattern in the second hard mask layer, where the first pattern includes a first mandrel oriented lengthwise in a first direction and a second mandrel oriented lengthwise in a second direction different from the first direction, and where the first mandrel has a top surface, a first sidewall, and a second sidewall opposite to the first sidewall, and depositing a material towards the first mandrel and the second mandrel such that a layer of the material is formed on the top surface and the first sidewall but not the second sidewall of the first mandrel.

Abstract: A system and method for depositing a photoresist and utilizing the photoresist are provided. In an embodiment a deposition chamber is utilized along with a first precursor material comprising carbon-carbon double bonds and a second precursor material comprising repeating units to deposit the photoresist onto a substrate. The first precursor material is turned into a plasma in a remote plasma chamber prior to being introduced into the deposition chamber. The resulting photoresist comprises a carbon backbone with carbon-carbon double bonds.

Abstract: Pyrimidine compounds of Formula (I). Assignments to the variables in the formula are set forth herein. Also disclosed is a method of treating cancer with one of the pyrimidine compounds.

Abstract: In a material verification method, information of newly loaded materials in a production line is obtained. It is determined whether the information has been verified. If the information has not been verified, it is determined whether a tray supporting the newly loaded materials has been switched from use in producing a first product to use in producing a second product. If the tray supporting the newly loaded materials is not switched to use in producing the second product, the information of the newly loaded materials is presented to a user for material verification. A system for administering such method and a device applying the method are also disclosed.

Abstract: An audio switching device includes a housing, a first user interface, and a controller within the housing and in electronic communication with the first user interface. The controller is configured to connect a first audio source to the audio switching device, connect a first listening device to the audio switching device, such that an output from the first audio source is received at the first listening device, receive a first input from the first user interface, disconnect the first listening device in response to receiving the first input, and connect a second audio listening device to the audio switching device, such that an output from the first audio source is received at the second listening device.

Abstract: A method for forming a semiconductor device is provided. In some embodiments, the method includes forming a target layer over a semiconductor substrate, forming a carbon-rich hard masking layer over the target layer, patterning features in the carbon-rich hard masking layer using an etching process, performing a directional ion beam trimming process on the features patterned in the carbon-rich hard masking layer, and patterning the target layer using the carbon-rich hard masking layer as a mask.

Abstract: A method includes patterning a hard mask over a target layer, capturing a low resolution image of the hard mask, and enhancing the low resolution image of the hard mask with a first machine learning model to produce an enhanced image of the hard mask. The method further includes analyzing the enhanced image of the hard mask with a second machine learning model to determine whether the target layer has defects.

Abstract: A method of depositing a material on one of two, but not both, sidewalls of a raised structure formed on a substrate includes tilting a normal of the substrate away from a source of the deposition material or tilting the source of the deposition material away from the normal of the substrate. The method may be implemented by a plasma-enhanced chemical vapor deposition (PECVD) technique.

Abstract: A critical dimension uniformity control method is provided. The method includes gathering a first CDU by a first critical dimension from a first wafer after being processed by a first surface process. The method includes determining a first calibration process based on the first CDU. The determining includes an intra dose correction step for correcting reticle-dependent deviation, a thru-slit dose sensitivity correction step for correcting time-dependent deviation, and an inter dose correction step for correcting process-dependent deviation. The method includes calibrating the first surface process by the first calibration process to determine a second surface process different from the first surface process.

Abstract: A method of manufacturing a semiconductor device includes forming a first resist layer over a substrate, and forming a second resist layer over the first resist layer. The second resist layer is patterned to expose a portion of the first resist layer to form a second resist layer pattern. The first resist layer is exposed to extreme ultraviolet (XUV) radiation diffracted by the second resist layer pattern. Portions of the first resist layer exposed to the XUV radiation diffracted by the second resist layer are removed.